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    Monolithic integrated circuit device having microwave power amplifier including a matching circuit using distributed lines
    1.
    发明授权
    Monolithic integrated circuit device having microwave power amplifier including a matching circuit using distributed lines 失效
    具有微波功率放大器的单片集成电路器件包括使用分布线路的匹配电路

    公开(公告)号：US5574402A

    公开(公告)日：1996-11-12

    申请号：US524188

    申请日：1995-09-06

    申请人： Akishige Nakajima ,  Tooru Fujioka ,  Eiichi Hase

    发明人： Akishige Nakajima ,  Tooru Fujioka ,  Eiichi Hase

    IPC分类号： H01L25/16 ,  H03F3/193 ,  H03F3/60 ,  H03F3/195

    CPC分类号： H03F3/601 ,  H01L23/66 ,  H03F3/1935 ,  H01L2223/6644 ,  H01L2223/6683 ,  H01L2924/0002 ,  H01L2924/3011 ,  H03F2200/294 ,  H03F2200/372

    摘要： A microwave multi-stage power amplifier has matching circuits for input and output stages and one or more inter-stage matching circuits. The amplifier and a signal output pad and first and second voltage supply pads are formed at one and the same semi-insulating substrate. A first FET in the output stage has its drain connected to the first voltage supply pad through a first distributed line and further connected to the signal output pad through a second distributed line in which the first and second distributed lines contribute to formation of the matching circuit for the output stage. A second FET in a stage preceding to the output stage has its drain connected to the second voltage supply pad through a third distributed line serving as a connection conductor. The first distributed line has a width larger than that of the third distributed line and has a length which limits an impedance seen at the drain of the output stage FET towards the first voltage supply pad at an operation frequency of the amplifier to a value other than infinity.

    摘要翻译： 微波多级功率放大器具有用于输入和输出级和一个或多个级间匹配电路的匹配电路。 放大器和信号输出焊盘以及第一和第二电压供给焊盘形成在同一半绝缘基板上。 输出级中的第一FET通过第一分布线将漏极连接到第一电压焊盘，并通过第二分布线连接到信号输出焊盘，其中第一和第二分布线有助于形成匹配电路 用于输出级。 在输出级之前的阶段中的第二FET的漏极通过用作连接导体的第三分布线连接到第二电压源焊盘。 第一分布线的宽度大于第三分布线的宽度，并且具有将放大器的工作频率处的输出级FET的漏极处的阻抗朝向第一电压源焊盘限制为除了第二分配线以外的值的长度 无穷。

    Low-distortion cascode circuit
    2.
    发明授权
    Low-distortion cascode circuit 失效
    低失真共源共栅电路

    公开(公告)号：US5514992A

    公开(公告)日：1996-05-07

    申请号：US273800

    申请日：1994-07-12

    申请人： Satoshi Tanaka ,  Akishige Nakajima ,  Eiichi Hase ,  Chushiro Kusano

    发明人： Satoshi Tanaka ,  Akishige Nakajima ,  Eiichi Hase ,  Chushiro Kusano

    IPC分类号： H03D7/12 ,  H01L27/095 ,  H03F1/08 ,  H03F1/22 ,  H03B19/00 ,  H03K3/353

    CPC分类号： H03F1/226 ,  H01L27/095

    摘要： An electronic circuit is provided with a first field effect transistor and a second field effect transistor, in which a drain of the first field effect transistor connected to a source of the second field effect transistor. This electronic circuit inputs a first signal to a gate electrode of the first field effect transistor, inputs a second signal to a gate electrode of the second field effect transistor and outputs a signal from a drain of the second field effect transistor. This electronic circuit is a cascode circuit related to the current drivability of the second field effect transistor is set to be larger than the current drivability of the first field effect transistor, and there is an effect that third-order or higher order distortion characteristics of a cascode type or dual-gate circuit can be reduced.

    摘要翻译： 电子电路设置有第一场效应晶体管和第二场效应晶体管，其中第一场效应晶体管的漏极连接到第二场效应晶体管的源极。 该电子电路将第一信号输入到第一场效应晶体管的栅电极，将第二信号输入到第二场效应晶体管的栅极，并输出来自第二场效应晶体管的漏极的信号。 该电子电路是与第二场效应晶体管的电流驱动能力相关的共源共栅电路被设定为大于第一场效应晶体管的电流驱动能力，并且具有以下效果：第一场效应晶体管的三阶或更高阶失真特性 可以降低共源共栅型或双栅极电路。