公开(公告)号：US4001870A

公开(公告)日：1977-01-04

申请号：US420677

申请日：1973-11-30

申请人： Atsushi Saiki ,  Kikuji Sato ,  Seiki Harada ,  Terue Tsunoda ,  Yoichi Oba

发明人： Atsushi Saiki ,  Kikuji Sato ,  Seiki Harada ,  Terue Tsunoda ,  Yoichi Oba

IPC分类号： H01B3/30 ,  H01L21/312 ,  H01L23/532 ,  H01L23/30

CPC分类号： H01L23/5329 ,  H01B3/306 ,  H01L21/312 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/12044

摘要： An insulating film provided on the surface of a semiconductor device having a protective film of silicon dioxide is composed of a double layer. The double layer consists of a thin film which is disposed on at least a part of the protective film of silicon dioxide and which is made of an organic compound containing either an amino group as well as an alkoxysilane group or an epoxy group as well as an alkoxysilane group, and a film which is disposed so as to cover the thin film of an organic compound and which is made of a heat-resisting polymer resin.The heat-resisting polymer is the reaction product of 4,4'-diamino-diphenylether, 4,4'-diamino-diphenyl ether-3-carbonyl amide, and pyromellitic acid dianhydride.

公开(公告)号：US4040083A

公开(公告)日：1977-08-02

申请号：US526407

申请日：1974-11-22

申请人： Atsushi Saiki ,  Seiki Harada ,  Yoichi Oba

发明人： Atsushi Saiki ,  Seiki Harada ,  Yoichi Oba

IPC分类号： H01L21/283 ,  H01L21/312 ,  H01L23/29 ,  H01L23/31 ,  H01L23/485 ,  H01L23/30 ,  H01L23/50

CPC分类号： H01L23/293 ,  H01L23/29 ,  H01L23/291 ,  H01L23/485 ,  H01L2924/0002 ,  H01L2924/12044

摘要： Disclosed is a semiconductor device including a Si body, and SiO.sub.2 layer disposed on the surface of the body, an aluminum oxide layer having a thickness of about 50 A on the SiO.sub.2 layer, which is formed by applying a solution including an aluminum chelate compound onto the SiO.sub.2 layer and heating the solution at a temperature of 300.degree. C. for 30 minutes, and a polymer resin layer of polyimide disposed on the aluminum oxide layer. In this device, the adhesive-strength between the SiO.sub.2 layer and the polyimide layer is remarkably increased when compared with a semiconductor device wherein the polyimide layer is directly disposed on the SiO.sub.2 layer.

公开(公告)号：US4436583A

公开(公告)日：1984-03-13

申请号：US445576

申请日：1982-11-30

申请人： Atsushi Saiki ,  Takao Iwayanagi ,  Saburo Nonogaki ,  Takashi Nishida ,  Seiki Harada

发明人： Atsushi Saiki ,  Takao Iwayanagi ,  Saburo Nonogaki ,  Takashi Nishida ,  Seiki Harada

IPC分类号： H01L21/30 ,  C08J7/02 ,  H01L21/027 ,  H01L21/308 ,  H01L21/311 ,  H01L21/312 ,  H01L23/48 ,  H05K1/03 ,  H05K3/00 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06 ,  B29C17/08

CPC分类号： H01L21/31133 ,  H01L21/312 ,  H05K1/0346 ,  H05K3/0017

摘要： Disclosed is a selective etching method of a polyimide type resin film which uses an etching mask consisting of a negative type photoresist material prepared by adding a photosensitive reagent to an unsaturated ketone polymer such as polymethylisopropenylketone as the base resin and an etching solution consisting of 20 to 40% by volume of hydrazine hydrate and the balance of a polyamine. The etching method of the present invention can provide the pattern of the polyimide type resin film having high dimensional accuracy by wet etching.

摘要翻译： 本发明公开了一种聚酰亚胺树脂薄膜的选择性蚀刻方法，该方法使用由通过将不饱和酮聚合物如聚甲基异丙烯基酮作为基础树脂添加光敏剂而制备的负型光致抗蚀剂构成的蚀刻掩模和由20〜 40％体积的水合肼和余量的多胺。 本发明的蚀刻方法可以通过湿蚀刻提供具有高尺寸精度的聚酰亚胺型树脂膜的图案。

公开(公告)号：US06747339B1

公开(公告)日：2004-06-08

申请号：US08362293

申请日：1994-12-22

申请人： Kiichiro Mukai ,  Atsushi Saiki ,  Seiki Harada

发明人： Kiichiro Mukai ,  Atsushi Saiki ,  Seiki Harada

IPC分类号： H01L2358

CPC分类号： H01L21/02118 ,  H01L21/02129 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/312 ,  H01L23/057 ,  H01L23/10 ,  H01L23/293 ,  H01L23/3171 ,  H01L23/556 ,  H01L24/48 ,  H01L2224/05599 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/85399 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/01021 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/16195 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device wherein a coating film which is made of a polyimide resin or a polyimide isoindoloquinazolinedione resin and which is at least 10 &mgr;m thick is disposed on at least an active region of a semiconductor substrate, and the resultant semiconductor substrate is encapsulated in a ceramic package. The semiconductor device has troubles relieved conspicuously, the troubles being ascribable to alpha-rays which come flying from impurities contained in the material of the package.

摘要翻译： 半导体装置，其特征在于，在半导体基板的至少有源区域上设置由聚酰亚胺树脂或聚酰亚胺异吲哚并唑并二酮树脂构成的涂膜至少10μm厚的半导体装置， 包。 半导体器件明显地消除了麻烦，这些麻烦归因于包含在包装材料中的杂质所产生的α射线。

公开(公告)号：US4926238A

公开(公告)日：1990-05-15

申请号：US252701

申请日：1988-09-30

申请人： Kiichiro Mukai ,  Atsushi Saiki ,  Seiki Harada

发明人： Kiichiro Mukai ,  Atsushi Saiki ,  Seiki Harada

IPC分类号： H01L23/32 ,  H01L21/312 ,  H01L23/057 ,  H01L23/10 ,  H01L23/29 ,  H01L23/31 ,  H01L23/556

CPC分类号： H01L24/50 ,  H01L21/312 ,  H01L23/057 ,  H01L23/10 ,  H01L23/293 ,  H01L23/3171 ,  H01L23/556 ,  H01L24/05 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05556 ,  H01L2224/13144 ,  H01L2224/48095 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01021 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01061 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01092 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/16195

摘要： A semiconductor device wherein a coating film which is made of a polyimide resin or a polyimide isoindoloquinazolinedione resin and which is at least 10 .mu.m thick is disposed on at least an active region of a semiconductor substrate, and the resultant semiconductor substrate is encapsulated in a ceramic package. The semiconductor device has troubles relieved conspicuously, the troubles being ascribable to alpha-rays which come flying from impurities contained in the material of the package.

摘要翻译： 在半导体衬底的至少有源区上设置半导体装置，其中由聚酰亚胺树脂或聚酰亚胺异吲哚并唑并二酮树脂制成并且至少10μm厚的涂膜，并将所得半导体衬底封装在 陶瓷包装。 半导体器件明显地消除了麻烦，这些麻烦归因于包含在包装材料中的杂质所产生的α射线。

公开(公告)号：US4225702A

公开(公告)日：1980-09-30

申请号：US8408

申请日：1979-02-01

申请人： Daisuke Makino ,  Yasuo Miyadera ,  Seiki Harada ,  Atsushi Saiki

发明人： Daisuke Makino ,  Yasuo Miyadera ,  Seiki Harada ,  Atsushi Saiki

IPC分类号： C08G69/00 ,  C08G69/32 ,  C08G73/00 ,  C08G73/10 ,  H01B3/30 ,  H01L21/312 ,  H01L21/768 ,  H01L23/522

CPC分类号： C08G73/1032 ,  H01B3/303

摘要： A method of preparing a polyamide acid type intermediate is provided, by using a purified inert solvent and monomer compounds, or diamine and/or diaminoamide compounds and a tetracarboxylic acid dianhydride, whose ionic impurities and free acid contents were reduced by recrystallization purification. The polyamide acid type intermediate may improve electrical properties and heat resistance of semiconductors when it is applied to, for instance, a surface-protecting film of semiconductors or an interlayer-insulating film of semiconductors having a multiple layer wiring structure.

摘要翻译： 通过使用纯化的惰性溶剂和单体化合物或二胺和/或二氨基酰胺化合物和四羧酸二酐，其离子杂质和游离酸含量通过重结晶纯化而还原，提供聚酰胺酸型中间体的制备方法。 当聚酰胺酸型中间体用于例如半导体的表面保护膜或具有多层布线结构的半导体的层间绝缘膜时，可提高半导体的电性能和耐热性。

公开(公告)号：US4017886A

公开(公告)日：1977-04-12

申请号：US578174

申请日：1975-05-16

申请人： Masami Tomono ,  Akira Abe ,  Seiki Harada ,  Kikuji Sato ,  Takeshi Takagi ,  Genichi Kamoshita ,  Yuichiro Oya ,  Atsushi Saiki

发明人： Masami Tomono ,  Akira Abe ,  Seiki Harada ,  Kikuji Sato ,  Takeshi Takagi ,  Genichi Kamoshita ,  Yuichiro Oya ,  Atsushi Saiki

IPC分类号： H01L21/00 ,  H01L21/312 ,  H01L21/60 ,  H01L21/607 ,  H01L23/29 ,  H01L23/485 ,  H01L23/532 ,  H01L23/30

CPC分类号： H01L24/85 ,  H01L21/00 ,  H01L21/312 ,  H01L23/29 ,  H01L23/485 ,  H01L23/5329 ,  H01L24/03 ,  H01L24/05 ,  H01L24/48 ,  H01L2224/0345 ,  H01L2224/04042 ,  H01L2224/05548 ,  H01L2224/05556 ,  H01L2224/05558 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/05671 ,  H01L2224/0568 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/4807 ,  H01L2224/4845 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48666 ,  H01L2224/48669 ,  H01L2224/48671 ,  H01L2224/4868 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2224/48766 ,  H01L2224/48769 ,  H01L2224/48771 ,  H01L2224/4878 ,  H01L2224/85205 ,  H01L2224/85424 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01016 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0106 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/12044 ,  H01L2924/30105

摘要： Disclosed is a discrete semiconductor device comprising a Si body having an emitter region, a base region and a collector region, an SiO.sub.2 layer disposed on the surface of the body, a polyimide resin having a thickness of 5 .mu. disposed on the SiO.sub.2 layer, electrodes penetrating through the SiO.sub.2 layer and the polyimide resin thereby contacting the emitter region and the base region, respectively and extending on the surface of the polyimide resin, whereby it becomes easy to bond a wire connected to an external electrode with the electrodes.

摘要翻译： 公开了一种分立半导体器件，其包括具有发射极区域，基极区域和集电极区域的Si体，设置在主体表面上的SiO 2层，设置在SiO 2层上的厚度为5μm的聚酰亚胺树脂，电极 穿透SiO 2层和聚酰亚胺树脂，从而分别与发射极区域和基极区域接触，并且在聚酰亚胺树脂的表面上延伸，从而容易将与外部电极连接的电线与电极接合。

公开(公告)号：US5391915A

公开(公告)日：1995-02-21

申请号：US165538

申请日：1993-12-13

申请人： Kiichiro Mukai ,  Atsushi Saiki ,  Seiki Harada

发明人： Kiichiro Mukai ,  Atsushi Saiki ,  Seiki Harada

IPC分类号： H01L21/312 ,  H01L23/057 ,  H01L23/10 ,  H01L23/29 ,  H01L23/31 ,  H01L23/556 ,  H01L29/34 ,  H01L23/02 ,  H01L23/12

CPC分类号： H01L23/3171 ,  H01L21/312 ,  H01L23/057 ,  H01L23/10 ,  H01L23/293 ,  H01L23/556 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01021 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/16195

摘要： A semiconductor device wherein a coating film which is made of a polyimide resin or a polyimide isoindoloquinazolinedione resin and which is at least 10 .mu.m thick is disposed on at least an active region of a semiconductor substrate, and the resultant semiconductor substrate is encapsulated in a ceramic package. The semiconductor device has troubles relieved conspicuously, the troubles being ascribable to alpha-rays which come flying from impurities contained in the material of the package.

摘要翻译： 在半导体衬底的至少有源区上设置半导体装置，其中由聚酰亚胺树脂或聚酰亚胺异吲哚并唑并二酮树脂制成并且至少10μm厚的涂膜，并将所得半导体衬底封装在 陶瓷包装。 半导体器件明显地消除了麻烦，这些麻烦归因于包含在包装材料中的杂质所产生的α射线。

公开(公告)号：US4218283A

公开(公告)日：1980-08-19

申请号：US924008

申请日：1978-07-12

申请人： Atsushi Saiki ,  Toshio Okubo ,  Seiki Harada

发明人： Atsushi Saiki ,  Toshio Okubo ,  Seiki Harada

IPC分类号： H01L21/311 ,  H01L21/312 ,  H01L21/768 ,  H05K1/03 ,  H05K3/00 ,  H01L7/00 ,  C09K13/00 ,  C23F1/00

CPC分类号： H01L21/312 ,  H01L21/31133 ,  H01L21/76802 ,  H01L21/76804 ,  H05K1/0346 ,  H05K3/0017

摘要： A semiconductor device fabricated by forming a layer of cured polyimide resin on a semiconductor body, forming a photoresist layer having a prescribed pattern on said cured layer, immersing in an etchant consisting of hydrazine and ethylenediamine to said cured layer through said prescribed pattern, whereby said cured layer is precisely etched according to said prescribed pattern and prescribed surfaces of said semiconductor body are exposed, forming a metal layer on the surface of said polyimide and the prescribed surfaces of said body, and selectively etching said metal layer so as to form a prescribed pattern.

摘要翻译： 一种半导体器件，其通过在半导体本体上形成固化的聚酰亚胺树脂层，在所述固化层上形成具有规定图案的光致抗蚀剂层，通过所述规定图案将浸渍在由肼和乙二胺组成的蚀刻剂的所述固化层上， 根据所述规定的图案精确地蚀刻固化层，暴露所述半导体主体的规定表面，在所述聚酰亚胺的表面和所述体的规定表面上形成金属层，并选择性地蚀刻所述金属层，以形成规定的 模式。

公开(公告)号：US4113550A

公开(公告)日：1978-09-12

申请号：US695040

申请日：1976-06-11

申请人： Atsushi Saiki ,  Toshio Okubo ,  Seiki Harada

发明人： Atsushi Saiki ,  Toshio Okubo ,  Seiki Harada

IPC分类号： H01L21/311 ,  H01L21/312 ,  H01L21/768 ,  H05K1/03 ,  H05K3/00 ,  H01L7/00 ,  C09K13/00 ,  C23F1/00

CPC分类号： H01L21/76804 ,  H01L21/31133 ,  H01L21/312 ,  H01L21/76802 ,  H05K1/0346 ,  H05K3/0017

摘要： A semiconductor device fabricated by forming a layer of semicured polyimide resin on a semiconductor body, forming a photoresist layer having a prescribed pattern on said semicured layer, immersing in an etchant consisting of hydrazine and ethylenediamine to said semicured layer through said prescribed pattern, whereby said semicured layer is precisely etched according to said prescribed pattern and prescribed surfaces of said semiconductor body are exposed, curing said semicured polyimide so as to form a layer of said polyimide resin, forming a metal layer on the surface of said polyimide and the prescribed surfaces of said body, and selectively etching said metal layer so as to form a prescribed pattern.