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    Thin wafer handling structure and method
    1.
    发明授权
    Thin wafer handling structure and method 有权
    薄晶片处理结构及方法

    公开(公告)号：US08871609B2

    公开(公告)日：2014-10-28

    申请号：US12818362

    申请日：2010-06-18

    申请人： Chen-Hua Yu ,  Kuo-Ching Hsu ,  Chen-Shien Chen ,  Ching-Wen Hsiao

    发明人： Chen-Hua Yu ,  Kuo-Ching Hsu ,  Chen-Shien Chen ,  Ching-Wen Hsiao

    IPC分类号： H01L21/30 ,  H01L21/46 ,  H01L21/683 ,  H01L21/18 ,  H01L21/26 ,  H01L21/265

    CPC分类号： H01L21/187 ,  H01L21/6835 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/68381 ,  Y10T428/1476

    摘要： A thin wafer handling structure includes a semiconductor wafer, a release layer that can be released by applying energy, an adhesive layer that can be removed by a solvent, and a carrier, where the release layer is applied on the carrier by coating or laminating, the adhesive layer is applied on the semiconductor wafer by coating or laminating, and the semiconductor wafer and the carrier is bonded together with the release layer and the adhesive layer in between. The method includes applying a release layer on a carrier, applying an adhesive layer on a semiconductor wafer, bonding the carrier and the semiconductor wafer, releasing the carrier by applying energy on the release layer, e.g. UV or laser, and cleaning the semiconductor's surface by a solvent to remove any residue of the adhesive layer.

    摘要翻译： 薄晶片处理结构包括半导体晶片，可通过施加能量释放的释放层，可通过溶剂除去的粘合剂层和载体，其中通过涂覆或层压将剥离层施加在载体上， 通过涂布或层压将粘合剂层施加在半导体晶片上，半导体晶片和载体与剥离层和粘合剂层粘合在一起。 该方法包括在载体上施加剥离层，在半导体晶片上施加粘合剂层，粘合载体和半导体晶片，通过在释放层上施加能量来释放载体，例如， UV或激光，并且通过溶剂清洁半导体的表面以除去粘合剂层的任何残余物。