公开(公告)号：US06949458B2

公开(公告)日：2005-09-27

申请号：US10361228

申请日：2003-02-10

申请人： Edward W. Conrad ,  Chung H. Lam ,  Dale W. Martin ,  Edmund Sprogis

发明人： Edward W. Conrad ,  Chung H. Lam ,  Dale W. Martin ,  Edmund Sprogis

IPC分类号： H01L21/60 ,  H01L21/768 ,  H01L23/485 ,  H01L21/4763

CPC分类号： H01L21/76897 ,  H01L21/76895 ,  H01L23/485 ,  H01L2924/0002 ,  Y10T29/49147 ,  Y10T29/49165 ,  H01L2924/00

摘要： A method and structure for forming a sidewall image transfer conductor having a contact pad includes forming an insulator to include a recess, depositing a conductor around the insulator, and etching the conductor to form the sidewall image transfer conductor, wherein the conductor remains in the recess and forms the contact pad and the recess is perpendicular to the sidewall image transfer conductor.

摘要翻译： 用于形成具有接触焊盘的侧壁图像传送导体的方法和结构包括形成绝缘体以包括凹部，在绝缘体周围沉积导体，并蚀刻导体以形成侧壁图像传输导体，其中导体保留在凹部 并且形成接触焊盘，并且凹部垂直于侧壁图像传送导体。

公开(公告)号：US06566759B1

公开(公告)日：2003-05-20

申请号：US09379453

申请日：1999-08-23

申请人： Edward W. Conrad ,  Chung H. Lam ,  Dale W. Martin ,  Edmund Sprogis

发明人： Edward W. Conrad ,  Chung H. Lam ,  Dale W. Martin ,  Edmund Sprogis

IPC分类号： H01L2348

CPC分类号： H01L21/76897 ,  H01L21/76895 ,  H01L23/485 ,  H01L2924/0002 ,  Y10T29/49147 ,  Y10T29/49165 ,  H01L2924/00

摘要： A structure for forming a sidewall image transfer conductor having a contact pad includes forming an insulator to include a recess, depositing a conductor around the insulator, and etching the conductor to form the sidewall image transfer conductor, wherein the conductor remains in the recess and forms the contact pad and the recess is perpendicular to the sidewall image transfer conductor.

摘要翻译： 用于形成具有接触焊盘的侧壁图像传送导体的结构包括形成绝缘体以包括凹部，在绝缘体周围沉积导体，并蚀刻导体以形成侧壁图像传输导体，其中导体保留在凹部中并形成 接触垫和凹部垂直于侧壁图像传送导体。

公开(公告)号：US20090065925A1

公开(公告)日：2009-03-12

申请号：US12186655

申请日：2008-08-06

申请人： Kerry Bernstein ,  Timothy Dalton ,  Timothy Harrison Daubenspeck ,  Jeffrey Peter Gambino ,  Mark David Jaffe ,  Christopher David Muzzy ,  Wolfgang Sauter ,  Edmund Sprogis ,  Anthony Kendall Stamper

发明人： Kerry Bernstein ,  Timothy Dalton ,  Timothy Harrison Daubenspeck ,  Jeffrey Peter Gambino ,  Mark David Jaffe ,  Christopher David Muzzy ,  Wolfgang Sauter ,  Edmund Sprogis ,  Anthony Kendall Stamper

IPC分类号： H01L23/48

CPC分类号： H01L24/10 ,  H01L23/13 ,  H01L23/481 ,  H01L23/49833 ,  H01L23/5385 ,  H01L24/13 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0652 ,  H01L25/0655 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/14181 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/17181 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73257 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/15174 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/15787 ,  H05K1/145 ,  H05K3/222 ,  H05K2201/10674 ,  Y10T436/171538 ,  Y10T436/172307 ,  H01L2924/00014 ,  H01L2924/00

摘要： An electronic device and method of packaging an electronic device. The device including: a first substrate, a second substrate and an integrated circuit chip having a first side and an opposite second side, a first set of chip pads on the first side and a second set of chip pads on the second side of the integrated circuit chip, chip pads of the first set of chip pads physically and electrically connected to corresponding substrate pads on the first substrate and chip pads of the second set of chip pads physically and electrically connected to substrate pads of the substrate.

摘要翻译： 一种电子装置和包装电子装置的方法。 该装置包括：第一基板，第二基板和具有第一侧和相对的第二侧的集成电路芯片，在第一侧上的第一组芯片焊盘和在集成的第二侧上的第二组芯片焊盘 电路芯片，第一组芯片焊盘的芯片焊盘物理和电连接到第一衬底上的对应衬底焊盘，并且第二组芯片焊盘的芯片焊盘物理和电连接到衬底的衬底焊盘。

公开(公告)号：US20080042798A1

公开(公告)日：2008-02-21

申请号：US11848263

申请日：2007-08-31

申请人： Douglas Coolbaugh ,  Ebenezer Eshun ,  Terence Hook ,  Robert Rassel ,  Edmund Sprogis ,  Anthony Stamper ,  William Murphy

发明人： Douglas Coolbaugh ,  Ebenezer Eshun ,  Terence Hook ,  Robert Rassel ,  Edmund Sprogis ,  Anthony Stamper ,  William Murphy

IPC分类号： H01C1/08

CPC分类号： H01C7/1013 ,  H01C1/084 ,  H01L2924/0002 ,  Y10T29/49083 ,  Y10T29/49085 ,  Y10T29/49099 ,  Y10T29/49144 ,  Y10T29/49147 ,  H01L2924/00

摘要： A resistor with heat sink is provided. The heat sink includes a conductive path having metal or other thermal conductor having a high thermal conductivity. To avoid shorting the electrical resistor to ground with the thermal conductor, a thin layer of high thermal conductivity electrical insulator is interposed between the thermal conductor and the body of the resistor. Accordingly, a resistor can carry large amounts of current because the high conductivity thermal conductor will conduct heat away from the resistor to a heat sink. Various configurations of thermal conductors and heat sinks are provided offering good thermal conductive properties in addition to reduced parasitic capacitances and other parasitic electrical effects, which would reduce the high frequency response of the electrical resistor.

公开(公告)号：US20070138657A1

公开(公告)日：2007-06-21

申请号：US11314272

申请日：2005-12-21

申请人： Vincenzo Condorelli ,  Claudius Feger ,  Kevin Gotze ,  Nihad Hadzic ,  John Knickerbocker ,  Edmund Sprogis

发明人： Vincenzo Condorelli ,  Claudius Feger ,  Kevin Gotze ,  Nihad Hadzic ,  John Knickerbocker ,  Edmund Sprogis

IPC分类号： H01L23/28

CPC分类号： H01L23/576 ,  H01L23/5383 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/73204 ,  H01L2924/01078 ,  H01L2924/10253 ,  H01L2924/15311 ,  H01L2924/19103 ,  H01L2924/19107 ,  Y10T29/53039 ,  Y10T29/53052 ,  Y10T29/53178 ,  H01L2924/00

摘要： A physically secure processing assembly is provided that includes dies mounted on a substrate so as to sandwich the electrical contacts of the dies between the dies and the substrate. The substrate is provided with substrate contacts and conductive pathways that are electrically coupled to the die contacts and extend through the substrate. Electrical conductors surround the conductive pathways. A monitoring circuit detects a break in continuity of one or more of the electrical conductors, and preferably renders the assembly inoperable. Preferably, an epoxy encapsulation is provided to prevent probing tools from being able to reach the die or substrate contacts.

摘要翻译： 提供了一种物理上安全的处理组件，其包括安装在基板上的模具，以便将模具的电触点夹在模具和基板之间。 衬底设置有电连接到管芯触点并延伸穿过衬底的衬底触点和导电路径。 电导体围绕导电路径。 监控电路检测一个或多个电导体的连续性的断裂，并且优选地使组件不可操作。 优选地，提供环氧树脂封装以防止探测工具能够到达管芯或衬底接触。

公开(公告)号：US20060110905A1

公开(公告)日：2006-05-25

申请号：US10904677

申请日：2004-11-23

申请人： James Adkisson ,  Jeffrey Gambino ,  Mark Jaffe ,  Richard Rassel ,  Edmund Sprogis

发明人： James Adkisson ,  Jeffrey Gambino ,  Mark Jaffe ,  Richard Rassel ,  Edmund Sprogis

IPC分类号： H01L21/44 ,  H01L21/50

CPC分类号： H01L24/02 ,  H01L23/3114 ,  H01L23/481 ,  H01L2224/0401 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/3011 ,  H01L2924/00

摘要： A bond pad for effecting through-wafer connections to an integrated circuit or electronic package and method of producing thereof. The bond pad includes a high surface area aluminum bond pad in order to resultingly obtain a highly reliable, low resistance connection between bond pad and electrical leads.

摘要翻译： 用于实现通过晶片连接到集成电路或电子封装的接合焊盘及其制造方法。 接合焊盘包括高表面积铝键合焊盘，以便得到接合焊盘和电引线之间的高度可靠的低电阻连接。

公开(公告)号：US20050121768A1

公开(公告)日：2005-06-09

申请号：US10729254

申请日：2003-12-05

申请人： Daniel Edelstein ,  Paul Andry ,  Leena Buchwalter ,  Jon Casey ,  Sherif Goma ,  Raymond Horton ,  Gareth Hougham ,  Michael Lane ,  Xiao Liu ,  Chirag Patel ,  Edmund Sprogis ,  Michelle Steen ,  Brian Sundlof ,  Cornelia Tsang ,  George Walker

发明人： Daniel Edelstein ,  Paul Andry ,  Leena Buchwalter ,  Jon Casey ,  Sherif Goma ,  Raymond Horton ,  Gareth Hougham ,  Michael Lane ,  Xiao Liu ,  Chirag Patel ,  Edmund Sprogis ,  Michelle Steen ,  Brian Sundlof ,  Cornelia Tsang ,  George Walker

IPC分类号： H01L21/48 ,  H01L21/768 ,  H01L23/498 ,  H01L23/48 ,  H01L21/4763

CPC分类号： H01L23/49883 ,  H01L21/486 ,  H01L21/76898 ,  H01L23/49827 ,  H01L2224/16 ,  H01L2924/01004 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/15311 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00

摘要： A carrier structure and method for fabricating a carrier structure with through-vias each having a conductive structure with an effective coefficient of thermal expansion which is less than or closely matched to that of the substrate, and having an effective elastic modulus value which is less than or closely matches that of the substrate. The conductive structure may include concentric via fill areas having differing materials disposed concentrically therein, a core of the substrate material surrounded by an annular ring of conductive material, a core of CTE-matched non-conductive material surrounded by an annular ring of conductive material, a conductive via having an inner void with low CTE, or a full fill of a conductive composite material such as a metal-ceramic paste which has been sintered or fused.

摘要翻译： 一种载体结构和方法，用于制造具有通孔的载流子结构，每个导通孔具有导电结构，其有效热膨胀系数小于或接近于基板的热膨胀系数，并且具有小于或等于 或者与衬底的密切匹配。 导电结构可以包括同心的通孔填充区域，其具有同心设置的不同材料，由导电材料的环形环包围的衬底材料的芯，由导电材料的环形环包围的CTE匹配的非导电材料的芯， 具有低CTE的内部空隙的导电通孔，或已经烧结或熔合的诸如金属 - 陶瓷浆料的导电复合材料的完整填充物。

公开(公告)号：US08084858B2

公开(公告)日：2011-12-27

申请号：US12424001

申请日：2009-04-15

申请人： Timothy H. Daubenspeck ,  Wolfgang Sauter ,  Timothy D. Sullivan ,  Steven L. Wright ,  Edmund Sprogis

发明人： Timothy H. Daubenspeck ,  Wolfgang Sauter ,  Timothy D. Sullivan ,  Steven L. Wright ,  Edmund Sprogis

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L24/03 ,  H01L23/5226 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/036 ,  H01L2224/0391 ,  H01L2224/0401 ,  H01L2224/05006 ,  H01L2224/05022 ,  H01L2224/05094 ,  H01L2224/05095 ,  H01L2224/05098 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05558 ,  H01L2224/05559 ,  H01L2224/05567 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/11334 ,  H01L2224/13007 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01059 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/10329 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/00 ,  H01L2224/05552

摘要： In one embodiment, a sub-pad assembly of metal structures is located directly underneath a metal pad. The sub-pad assembly includes an upper level metal line structure abutting the metal pad, a lower level metal line structure located underneath the upper level metal line structure, and a set of metal vias that provide electrical connection between the lower level metal line structure located underneath the upper level metal line structure. In another embodiment, the reliability of a C4 ball is enhanced by employing a metal pad structure having a set of integrated metal vias that are segmented and distributed to facilitate uniform current density distribution within the C4 ball. The areal density of the cross-sectional area in the plurality of metal vias is higher at the center portion of the metal pad than at the peripheral portion of the planar portion of the metal pad.

摘要翻译： 在一个实施例中，金属结构的子垫组件位于金属垫的正下方。 子焊盘组件包括邻接金属焊盘的上层金属线结构，位于上层金属线结构下方的下层金属线结构，以及一组在下层金属线结构之间提供电连接的金属通孔 在上层金属线结构下方。 在另一个实施例中，C4球的可靠性通过使用具有一组集成金属通孔的金属焊盘结构而被增强，所述集成金属通孔被分段和分配以便于在C4球内均匀的电流密度分布。 在金属焊盘的中心部分，多个金属通孔中的横截面面积的面密度高于在金属焊盘的平面部分的周边部分。

公开(公告)号：US20080067628A1

公开(公告)日：2008-03-20

申请号：US11930698

申请日：2007-10-31

申请人： Raymond Horton ,  John Knickerbocker ,  Edmund Sprogis ,  Cornelia Tsang

发明人： Raymond Horton ,  John Knickerbocker ,  Edmund Sprogis ,  Cornelia Tsang

IPC分类号： H01L29/00

CPC分类号： H01L23/49827 ,  H01L23/49822 ,  H01L23/50 ,  H01L23/5382 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/15311

摘要： Techniques for electronic device fabrication are provided. In one aspect, an electronic device is provided. The electronic device comprises at least one interposer structure having one or mote vias and a plurality of decoupling capacitors integrated therein, the at least one interposer structure being configured to allow for one or more of the plurality of decoupling capacitors to be selectively deactivated. In another aspect, a method of fabricating an electronic device comprising at least one interposer structure having one or more vias and a plurality of decoupling capacitors integrated therein comprises the following step. One or more of the plurality of decoupling capacitors are selectively deactivated

摘要翻译： 提供电子器件制造技术。 一方面，提供一种电子设备。 该电子设备包括具有一个或多个微通孔和集成在其中的多个去耦电容器的至少一个插入器结构，所述至少一个插入器结构被配置为允许选择性地去激活多个去耦电容器中的一个或多个。 在另一方面，一种制造电子器件的方法，包括至少一个具有一个或多个通孔的内插器结构和集成在其中的多个去耦电容器，其包括以下步骤。 选择性地去激活多个去耦电容器中的一个或多个

公开(公告)号：US20070190692A1

公开(公告)日：2007-08-16

申请号：US11275542

申请日：2006-01-13

申请人： Mete Erturk ,  Robert Groves ,  Jeffrey Johnson ,  Alvin Joseph ,  Qizhi Liu ,  Edmund Sprogis ,  Anthony Stamper

发明人： Mete Erturk ,  Robert Groves ,  Jeffrey Johnson ,  Alvin Joseph ,  Qizhi Liu ,  Edmund Sprogis ,  Anthony Stamper

IPC分类号： H01L21/50

CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

摘要： A backside contact structure and method of fabricating the structure. The method includes: forming a dielectric isolation in a substrate, the substrate having a frontside and an opposing backside; forming a first dielectric layer on the frontside of the substrate; forming a trench in the first dielectric layer, the trench aligned over and within a perimeter of the dielectric isolation and extending to the dielectric isolation; extending the trench formed in the first dielectric layer through the dielectric isolation and into the substrate to a depth less than a thickness of the substrate; filling the trench and co-planarizing a top surface of the trench with a top surface of the first dielectric layer to form an electrically conductive through via; and thinning the substrate from a backside of the substrate to expose the through via.

摘要翻译： 背面接触结构及其制造方法。 该方法包括：在衬底中形成电介质隔离，所述衬底具有前侧和相对的背面; 在所述基板的前侧形成第一电介质层; 在所述第一电介质层中形成沟槽，所述沟槽在所述电介质隔离的周边内并且在所述介电隔离的周边内对准并且延伸到所述电介质隔离; 将形成在第一电介质层中的沟槽通过电介质隔离延伸到衬底中至小于衬底厚度的深度; 填充沟槽并将沟槽的顶表面与第一介电层的顶表面共平面化以形成导电通孔; 并从衬底的背面稀释衬底以露出通孔。