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    SEMICONDUCTOR DEVICES HAVING THROUGH-VIAS AND METHODS FOR FABRICATING THE SAME
    6.
    发明申请
    SEMICONDUCTOR DEVICES HAVING THROUGH-VIAS AND METHODS FOR FABRICATING THE SAME 审中-公开
    具有通孔的半导体器件及其制造方法

    公开(公告)号：US20150243637A1

    公开(公告)日：2015-08-27

    申请号：US14709840

    申请日：2015-05-12

    申请人： Pil-Kyu Kang ,  Taeyeong Kim ,  Byung Lyul Park ,  Jumyong Park ,  Jinho Park ,  Kyu-Ha Lee ,  Deok-Young Jung ,  Gilheyun Choi

    发明人： Pil-Kyu Kang ,  Taeyeong Kim ,  Byung Lyul Park ,  Jumyong Park ,  Jinho Park ,  Kyu-Ha Lee ,  Deok-Young Jung ,  Gilheyun Choi

    IPC分类号： H01L25/065 ,  G11C8/00 ,  G11C16/08 ,  H01L23/544

    摘要： A conductive via of a semiconductor device is provided extending in a vertical direction through a substrate, a first end of the conductive via extending through a first surface of the substrate, so that the first end protrudes in the vertical direction relative to the first surface of the substrate. An insulating layer is provided on the first end of the conductive via and on the first surface of the substrate. An upper portion of a mask layer pattern is removed so that a capping portion of the insulating layer that is on the first end of the conductive via is exposed. A portion of the insulating layer at a side of, and spaced apart from, the conductive via, is removed, to form a recess in the insulating layer. The capping portion of the insulating layer on the first end of the conductive via is simultaneously removed.

    摘要翻译： 提供半导体器件的导电通孔，其沿垂直方向穿过衬底延伸，导电通孔的第一端延伸穿过衬底的第一表面，使得第一端相对于衬底的第一表面在垂直方向上突出 底物。 绝缘层设置在导电通孔的第一端和基板的第一表面上。 除去掩模层图案的上部，使得在导电通孔的第一端上的绝缘层的封盖部分露出。 去除绝缘层的与导电通孔相隔一定距离的一部分，以在绝缘层中形成凹陷。 同时去除导电通孔第一端上的绝缘层的封盖部分。

    Metal interconnect of semiconductor device
    7.
    发明授权
    Metal interconnect of semiconductor device 有权
    半导体器件的金属互连

    公开(公告)号：US08319348B2

    公开(公告)日：2012-11-27

    申请号：US12722643

    申请日：2010-03-12

    申请人： Jongmyeong Lee ,  Zungsun Choi ,  Gilheyun Choi ,  Byung-Lyul Park ,  Jinho Park ,  Hye Kyung Jung

    发明人： Jongmyeong Lee ,  Zungsun Choi ,  Gilheyun Choi ,  Byung-Lyul Park ,  Jinho Park ,  Hye Kyung Jung

    IPC分类号： H01L23/48

    CPC分类号： H01L23/528 ,  H01L23/5226 ,  H01L23/53214 ,  H01L23/53228 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Provided are a metal interconnect of a semiconductor device and a method of fabricating the metal interconnect. The metal interconnect includes a metal line having a first end and a second end disposed on an opposite side to the first end, a via electrically connected to the metal line, and a non-active segment extending from the first end and including a void. Tensile stress is decreased to prevent a void from occurring under the via. Accordingly, line breakage due to electromigration is substantially prevented, thus improving electrical characteristics of the device.

    摘要翻译： 提供半导体器件的金属互连和制造金属互连的方法。 金属互连包括金属线，其具有设置在与第一端相对的第一端和第二端，电连接到金属线的通孔和从第一端延伸并且包括空隙的非活性段。 减小拉伸应力以防止孔下方发生空隙。 因此，基本上防止了电迁移引起的线路断线，从而提高了器件的电气特性。