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    CONTOURED SHOWERHEAD FOR IMPROVED PLASMA SHAPING AND CONTROL
    2.
    发明申请
    CONTOURED SHOWERHEAD FOR IMPROVED PLASMA SHAPING AND CONTROL 有权
    用于改进等离子体成型和控制的组合式淋浴

    公开(公告)号：US20130334344A1

    公开(公告)日：2013-12-19

    申请号：US13541595

    申请日：2012-07-03

    申请人： Karl F. Leeser ,  James S. Sims

    发明人： Karl F. Leeser ,  James S. Sims

    IPC分类号： B05B1/14 ,  G06F17/50

    CPC分类号： C23C16/509 ,  B05B1/00 ,  B05B1/14 ,  B05B12/00 ,  C23C16/4412 ,  C23C16/45565 ,  G05B19/41 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32541 ,  H01J37/32568 ,  H01J2237/327 ,  H01J2237/3323 ,  H01J2237/334 ,  H01L21/02274

    摘要： Semiconductor processing chamber showerheads with contoured faceplates, as well as techniques for producing such faceplates, are provided. Data describing deposition rate as a function of gap distance between a reference showerhead faceplate and a reference substrate may be obtained, as well as data describing deposition rate as a function of location on the substrate when the reference showerhead and the reference substrate are in a fixed arrangement with respect to each other. The two data sets may be used to determine offsets from a reference plane associated with the faceplate that determine a contour profile to be used with the faceplate.

    摘要翻译： 提供具有轮廓面板的半导体处理室淋浴头以及用于生产这种面板的技术。 可以获得描述作为参考喷头面板和参考基板之间的间隙距离的函数的沉积速率的数据，以及当参考喷头和参考基板处于固定状态时描述作为基板上的位置的函数的沉积速率的数据 相互排列。 两个数据集可用于确定与面板相关联的参考平面的偏移，该偏移确定与面板一起使用的轮廓轮廓。

    Sequential method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
    5.
    发明授权
    Sequential method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD) 失效
    通过调制离子诱导的原子层沉积（MII-ALD）沉积薄膜的顺序方法

    公开(公告)号：US06428859B1

    公开(公告)日：2002-08-06

    申请号：US09812285

    申请日：2001-03-19

    申请人： Tony P. Chiang ,  Karl F. Leeser

    发明人： Tony P. Chiang ,  Karl F. Leeser

    IPC分类号： B01J1908

    CPC分类号： C23C16/45538 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/46 ,  C23C16/463 ,  C23C16/466 ,  C23C16/481 ,  C23C16/483 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76871

    摘要： The present invention relates to an enhanced sequential atomic layer deposition (ALD) technique suitable for deposition of barrier layers, adhesion layers, seed layers, low dielectric constant (low-k) films, high dielectric constant (high-k) films, and other conductive, semi-conductive, and non-conductive films. This is accomplished by 1) providing a non-thermal or non-pyrolytic means of triggering the deposition reaction; 2) providing a means of depositing a purer film of higher density at lower temperatures; and, 3) providing a faster and more efficient means of modulating the deposition sequence and hence the overall process rate resulting in an improved deposition method. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

    摘要翻译： 本发明涉及适用于阻挡层，粘附层，种子层，低介电常数（低k）膜，高介电常数（高k）膜等的沉积的增强的顺序原子层沉积（ALD）技术 导电，半导电和非导电膜。 这通过以下方式实现：1）提供触发沉积反应的非热或非热解方法; 2）提供在较低温度下沉积更高密度的较纯膜的方法; 和3）提供更快和更有效的调节沉积顺序的手段，并因此提供总体处理速率，从而产生改进的沉积方法。 要强调的是，该摘要被提供以符合要求抽象的规则，允许搜索者或其他读者快速确定技术公开内容的主题。 提交它的理解是，它不会用于解释或限制权利要求的范围或含义。

    HYBRID CERAMIC SHOWERHEAD
    6.
    发明申请
    HYBRID CERAMIC SHOWERHEAD 有权
    混合陶瓷淋浴

    公开(公告)号：US20120222815A1

    公开(公告)日：2012-09-06

    申请号：US13411369

    申请日：2012-03-02

    申请人： Mohamed Sabri ,  Ramkishan Rao Lingampalli ,  Karl F. Leeser

    发明人： Mohamed Sabri ,  Ramkishan Rao Lingampalli ,  Karl F. Leeser

    IPC分类号： H01L21/306 ,  B05B15/00 ,  C23C16/50

    CPC分类号： C23C16/45565

    摘要： Various implementations of hybrid ceramic faceplates for substrate processing showerheads are provided. The hybrid ceramic showerhead faceplates may include an electrode embedded within the ceramic material of the faceplate, as well as a pattern of through-holes. The electrode may be fully encapsulated within the ceramic material with respect to the through-holes. In some implementations, a heater element may also be embedded within the hybrid ceramic showerhead faceplate. A DC voltage source may be electrically connected with the hybrid ceramic showerhead faceplate during use. The hybrid ceramic faceplates may be easily removable from the substrate processing showerheads for easy cleaning and faceplate replacement.

    摘要翻译： 提供了用于衬底处理花洒的混合陶瓷面板的各种实施方式。 混合陶瓷花洒面板可以包括嵌入在面板的陶瓷材料内的电极以及通孔图案。 相对于通孔，电极可以完全地封装在陶瓷材料内。 在一些实施方案中，加热器元件也可以嵌入在混合陶瓷花洒面板内。 在使用过程中，DC电压源可以与混合陶瓷花洒面板电连接。 混合陶瓷面板可以容易地从衬底处理喷头中移除，以便于清洁和面板更换。

    Method for integrated in-situ cleaning and subsequent atomic layer deposition within a single processing chamber
    7.
    发明授权
    Method for integrated in-situ cleaning and subsequent atomic layer deposition within a single processing chamber 有权
    在单个处理室内集成原位清洗和随后的原子层沉积的方法

    公开(公告)号：US06949450B2

    公开(公告)日：2005-09-27

    申请号：US09994279

    申请日：2001-11-26

    申请人： Tony P. Chiang ,  Karl F. Leeser

    发明人： Tony P. Chiang ,  Karl F. Leeser

    IPC分类号： C23C16/02 ,  C23C16/08 ,  C23C16/34 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/46 ,  C23C16/48 ,  C23C16/515 ,  H01J37/32 ,  H01L21/285 ,  H01L21/768 ,  H01L21/322

    CPC分类号： C23C16/45525 ,  C23C16/0227 ,  C23C16/4412 ,  C23C16/455 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/45557 ,  C23C16/46 ,  C23C16/466 ,  C23C16/481 ,  C23C16/515 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32862 ,  H01L21/28562 ,  H01L21/76814 ,  H01L21/76838 ,  Y10S438/935

    摘要： A system and sequential method for integrated, in-situ modification of a substrate and subsequent atomic layer deposition of a thin film onto the substrate in an evacuated chamber includes introducing at least one feed gas into the chamber; generating a plasma from the feed gas; exposing said substrate to ions and/or radicals formed by the plasma; modulating any ions; reacting the substrate with said modulated ions and/or radicals to remove any contaminants from the substrate and producing a modified substrate. These steps are followed, in-situ, by performing an atomic layer deposition of a thin film onto the modified substrate in the chamber including introducing a first reactant gas into said chamber; adsorbing at least one monolayer of the first reactant gas onto the modified substrate; evacuating any excess first reactant gas from the chamber; introducing at least one additional feed gas into the chamber, generating a second plasma from the additional feed gas; exposing the modified substrate to additional ions and/or radicals formed by the plasma; modulating any additional ions; and reacting the adsorbed monolayer of the first reactant gas with any modulated additional ions and/or radicals to deposit the thin film.

    摘要翻译： 用于在衬底中进行集成的原位修改和在真空室中将薄膜沉积到衬底上的随后的原子层沉积的系统和顺序方法包括将至少一个进料气体引入室中; 从进料气体产生等离子体; 将所述衬底暴露于由等离子体形成的离子和/或自由基; 调节任何离子; 使衬底与所述调制的离子和/或自由基反应以从衬底​​去除任何污染物并产生改性衬底。 通过在室中将改性基板上的薄膜原子层沉积进入原位来实现这些步骤，包括将第一反应气体引入到所述室中; 将至少一个单层的第一反应气体吸附到改性基材上; 从腔室排出任何多余的第一反应气体; 将至少一个额外的进料气体引入所述室中，从所述另外的进料气体产生第二等离子体; 将修饰的基底暴露于由等离子体形成的附加离子和/或自由基; 调制任何额外的离子; 并使第一反应气体的吸附单层与任何调制的附加离子和/或自由基反应以沉积薄膜。

    Continuous method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
    9.
    发明授权
    Continuous method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD) 有权
    通过调制离子诱导原子层沉积（MII-ALD）沉积薄膜的连续方法

    公开(公告)号：US06416822B1

    公开(公告)日：2002-07-09

    申请号：US09812486

    申请日：2001-03-19

    申请人： Tony P. Chiang ,  Karl F. Leeser

    发明人： Tony P. Chiang ,  Karl F. Leeser

    IPC分类号： B05D300

    CPC分类号： C23C16/08 ,  C23C16/0227 ,  C23C16/34 ,  C23C16/401 ,  C23C16/45525 ,  C23C16/45538 ,  C23C16/45544 ,  C23C16/46 ,  C23C16/463 ,  C23C16/466 ,  C23C16/481 ,  C23C16/483 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76871

    摘要： The present invention relates to an enhanced non-sequential atomic layer deposition (ALD) technique suitable for deposition of barrier layers, adhesion layers, seed layers, low dielectric constant (low-k) films, high dielectric constant (high-k) films, and other conductive, semi-conductive, and non-conductive films. This is accomplished by 1) providing a non-thermal or non-pyrolytic means of triggering the deposition reaction; 2) providing a means of depositing a purer film of higher density at lower temperatures; and, 3) providing a faster and more efficient means of modulating the deposition sequence and hence the overall process rate resulting in an improved deposition method.

    摘要翻译： 本发明涉及适用于阻挡层，粘附层，种子层，低介电常数（低k）膜，高介电常数（high-k）膜）的沉积的增强的非顺序原子层沉积（ALD）技术， 和其他导电，半导电和非导电膜。 这通过以下方式实现：1）提供触发沉积反应的非热或非热解方法; 2）提供在较低温度下沉积更高密度的较纯膜的方法; 和3）提供更快和更有效的调节沉积顺序的手段，并因此提供总体处理速率，从而产生改进的沉积方法。

    Method for rapidly dechucking a semiconductor wafer from an electrostatic chuck utilizing a hysteretic discharge cycle
    10.
    发明授权
    Method for rapidly dechucking a semiconductor wafer from an electrostatic chuck utilizing a hysteretic discharge cycle 有权
    使用滞后放电循环从静电卡盘快速地将半导体晶片脱扣的方法

    公开(公告)号：US06236555B1

    公开(公告)日：2001-05-22

    申请号：US09294255

    申请日：1999-04-19

    申请人： Karl F. Leeser

    发明人： Karl F. Leeser

    IPC分类号： H02N1300

    CPC分类号： H01L21/6833 ,  Y10T279/23

    摘要： A method for rapidly dechucking a wafer from a chuck by applying a voltage that between the wafer and the electrode that performs a hysteretic discharge cycle such that residual charge is removed. The voltage is a decaying oscillating waveform that provides a decaying electric field at the wafer to chuck surface interface. The form of this field at this interface is very important to achieving rapid dechucking of less than 200 mS.

    摘要翻译： 一种用于通过施加晶片和电极之间的电压来快速地从卡盘中取出晶片的方法，该电压执行滞后放电循环，使得残留电荷被去除。 电压是衰减的振荡波形，其在晶片处向卡盘表面界面提供衰减电场。 该界面的形式对于实现小于200mS的快速脱扣是非常重要的。