摘要:
A semiconductor system (200) of one or more semiconductor interposers (201) with a certain dimension (210), conductive vias (212) extending from the first to the second surface, with terminals and attached non-reflow metal studs (215) at the ends of the vias. A semiconducting interposer surface may include discrete electronic components or an integrated circuit. One or more semiconductor chips (202, 203) have a dimension (220, 230) narrower than the interposer dimension, and an active surface with terminals and non-reflow metal studs (224, 234). One chip is flip-attached to the first interposer surface, and another chip to the second interposer surface, so that the interposer dimension projects over the chip dimension. An insulating substrate (204) has terminals and reflow bodies (242) to connect to the studs of the projecting interposer.
摘要:
A semiconductor system (200) of one or more semiconductor interposers (201) with a certain dimension (210), conductive vias (212) extending from the first to the second surface, with terminals and attached non-reflow metal studs (215) at the ends of the vias. A semiconducting interposer surface may include discrete electronic components or an integrated circuit. One or more semiconductor chips (202, 203) have a dimension (220, 230) narrower than the interposer dimension, and an active surface with terminals and non-reflow metal studs (224, 234). One chip is flip-attached to the first interposer surface, and another chip to the second interposer surface, so that the interposer dimension projects over the chip dimension. An insulating substrate (204) has terminals and reflow bodies (242) to connect to the studs of the projecting interposer.
摘要:
A semiconductor system (300) has one or more packaged active subsystems (310, 330); each subsystem has a substrate with electrical contact pads and one or more semiconductor chips stacked on top of each other, assembled on the substrate. The system further has a packaged passive subsystem (320) including a substrate with electrical contacts and passive electrical components, such as resistors, capacitors, and indictors. The passive subsystem is stacked with the active subsystems and connected to them by solder bodies.
摘要:
A package-on-package system (100) has a first subsystem (191) interconnected with a second subsystem (192) by solder connectors (193). The first subsystem has an insulating, trace-laminated, sheet-like carrier (101), which is laminated (102) with an insulating trace-laminated frame (110) exposing a central portion (103) of the carrier. A first chip (160) is disposed in the central portion, with a second chip (170) on top; the height of the assembled chips approximates the frame height (111). Bondable contact pads (104) are in the central portion, and solderable terminals (121; pitch center-to-center 0.65 mm or less) on the frame. The second subsystem has a laminated substrate (194) with at least one chip (196) attached, and terminals (195) in locations matching the terminals (121) on the frame of the first subsystem. The terminals of both subsystems are interconnected with solder (193) of a higher reflow temperature than additional solder balls (190) for connecting to external parts.
摘要:
A semiconductor chip (102) assembled on a substrate (101). The substrate has a first surface (101a) including conductive traces (110), which have a first length (111) and a first width (112), the first width being uniform along the first length, and further a pitch (114) to respective adjacent traces. The semiconductor chip has a second surface (102a) including contact pads (121); the second surface faces the first surface spaced apart by a gap (130). A conductive pillar (140) contacts each contact pad; the pillar includes a metal core (141) and a solder body (142), which connects the core to the respective trace across the gap. The pillar core (141) has an oblong cross section of a second width (151) and a second length (152) greater than the second width. Trace pitch (141) is equal to or smaller than twice the second width (151). The trace pitch is equal to or smaller than the second length (152).
摘要:
In a semiconductor system (100) including a chip (101) and a workpiece (102), the chip has metal-filled vias (140) positioned between contact pads (120) and the respective edges (110). In addition, seals against microcracks (150) and thermo-mechanical stress (151) are located between the vias and the active components, and sometimes also between the vias and the respective nearest edge. Workpiece (102) may be another semiconductor chip or a substrate; it has contact pads (170) matching the locations of the vias (140). The chip is vertically stacked on the workpiece so that each contact pad (170) is aligned and in electrical contact with the corresponding via (140).
摘要:
A device has a first semiconductor chip (101) with contact pads in an interior first set (102) and a peripheral second set (103). A deformed sphere (104) of non-reflow metal such as gold is placed on each contact pad of the first and second sets. At least one additional deformed sphere (105) is placed on the first set pads, forming column-shaped spacers. The first chip is attached to a substrate (110) with a chip attachment location and a third set of contact pads (112) near the location. Low profile bond wires (130) span between the pads of the third set and the second set. A second semiconductor chip (140) of a size has a fourth set of contact pads (141) at locations matching the first set pads. The second chip is placed over the first chip so that the fourth set pads are aligned with the spacers on the matching first set pads, and at least one edge of the second chip overhangs the sphere on at least one pad of the second set. A reflow metal (142) bonds the spacers to the second chip, while the spacers space the first and second chips by a gap (105a) wide enough for placing the wire spans to the second set pads.
摘要:
The power cap includes a power supply positioned between a cover and a base. The cover is provided with clips to permit the attachment and detachment of the cover to the power supply and the base. The base is provided with surface mounted NRTC or NVSRAM chips and electrical contacts. The power supply is provided with a crystal oscillator and a battery for controlling the operation of the NRTC or NVSRAM chips, and spring contacts for maintaining the electrical connection between the base and the power supply.
摘要:
A method and apparatus for fabricating a semiconductor device are disclosed. The method attaches semiconductor chips (130) on a sheet-like insulating substrate (101) integral with two or more patterned layers of conductive lines and vias and with contact pads (103) in pad locations. A mold is provided, which has a top portion (210) with metal protrusions (202) at locations matching the pad locations. The protrusions are shaped as truncated cones of a height suitable to approach the pad metal surface in the closed mold cavity. The substrate and the chip are loaded onto the bottom mold portion (310); the mold is closed by clamping the top portion onto the bottom portion so that the protrusions are aligned with the contact pads, approaching the pad surface. After pressuring encapsulation compound into the cavity, the mold is opened; the encapsulated device has apertures to the pad locations. Any residual compound formed on the pads is removed by laser, plasma, or chemical to expose the metal surface.