公开(公告)号：US5734313A

公开(公告)日：1998-03-31

申请号：US669399

申请日：1996-06-27

申请人： Masato Doi ,  Hirotoshi Inoue ,  Seiji Mitsuno

发明人： Masato Doi ,  Hirotoshi Inoue ,  Seiji Mitsuno

IPC分类号： H01C1/144 ,  H01C7/00 ,  H01C13/02 ,  H01C1/02 ,  H01C1/14

CPC分类号： H01C13/02

摘要： A chip-type composite electronic component according to the present invention comprises an insulating substrate (1), a common electrode (2) formed on the substrate (1), a plurality of individual electrodes (3a-3h) formed on the substrate (1) to be spaced from the common electrode (2), and a plurality of electronic elements (4a-4e) each interposed between each of the individual electrodes (3a-3h) and the common electrode (2). Each of the common electrode (2) and individual electrodes (3a-3h) has a plated solder layer as an outermost layer. Each of the electronic elements (4a-4e) has a direct current resistance of no less than 47K .OMEGA., and the solder layer of the common electrode (2) has a layer thickness which is no more than 2.9 times as great as that of the solder layer of the individual electrodes (3a-3h).

摘要翻译： PCT No.PCT / JP96 / 00002 Sec。 371日期1996年6月27日第 102（e）1996年6月27日PCT 1996年1月4日PCT PCT。 公开号WO96 / 21233 日本1996年7月11日根据本发明的芯片型复合电子部件包括绝缘基板（1），形成在基板（1）上的公共电极（2），形成有多个单独的电极（3a-3h） 在与所述公共电极（2）间隔开的所述基板（1）上，以及分别插入在各个电极（3a〜3h）和所述公共电极（2）之间的多个电子元件（4a〜4e）。 公共电极（2）和单独电极（3a-3h）中的每一个具有作为最外层的电镀焊料层。 每个电子元件（4a-4e）具有不小于47K欧姆的直流电阻，并且公共电极（2）的焊料层的层厚度不大于 各个电极（3a-3h）的焊料层。

公开(公告)号：US07888690B2

公开(公告)日：2011-02-15

申请号：US12034415

申请日：2008-02-20

申请人： Toshiaki Iwafuchi ,  Toyoharu Oohata ,  Masato Doi

发明人： Toshiaki Iwafuchi ,  Toyoharu Oohata ,  Masato Doi

IPC分类号： H01L33/00

CPC分类号： H01L33/24 ,  G02F2001/13613 ,  H01L21/2007 ,  H01L21/568 ,  H01L21/6835 ,  H01L24/16 ,  H01L24/24 ,  H01L24/81 ,  H01L24/82 ,  H01L25/0753 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/156 ,  H01L33/0079 ,  H01L33/0095 ,  H01L2221/6835 ,  H01L2221/68354 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2224/04105 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2224/16245 ,  H01L2224/18 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73267 ,  H01L2224/81001 ,  H01L2224/81136 ,  H01L2224/92244 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2924/3512 ,  Y10S438/982 ,  H01L2924/00 ,  H01L2224/05599

摘要： An image display unit and a method of producing the image display unit, wherein the image display unit includes an array of a plurality of light emitting devices for displaying an image, and wherein the method of producing the image display unit employs, for example, a space expanding transfer, whereby a first transfer step includes transferring the devices arrayed on a first substrate to a temporary holding member such that the devices are spaced from each other with a pitch larger than a pitch of the devices arrayed on the first substrate, a second holding step includes holding the devices on the temporary holding member, and a third transfer step includes transferring the devices held on the temporary holding member onto a second board such that the devices are spaced from each other with a pitch larger than the pitch of the devices held on the temporary holding member.

摘要翻译： 一种图像显示单元和图像显示单元的制造方法，其中，所述图像显示单元包括用于显示图像的多个发光装置的阵列，并且其中，所述图像显示单元的制造方法采用例如 空间膨胀转移，其中第一转移步骤包括将排列在第一衬底上的器件转移到临时保持构件，使得器件彼此间隔开，间距大于排列在第一衬底上的器件的间距， 保持步骤包括将设备保持在临时保持构件上，第三传送步骤包括将保持在临时保持构件上的设备转移到第二板上，使得设备彼此间隔开，间距大于设备的间距 举行临时控股成员。

公开(公告)号：US20090290337A1

公开(公告)日：2009-11-26

申请号：US12373479

申请日：2007-06-25

申请人： Katsuhiro Tomoda ,  Masato Doi ,  Toshiya Takagishi ,  Toshiaki Kanemitsu

发明人： Katsuhiro Tomoda ,  Masato Doi ,  Toshiya Takagishi ,  Toshiaki Kanemitsu

IPC分类号： F21V9/00 ,  B29C39/10 ,  B29C39/44 ,  B29C41/50 ,  H01L21/56

CPC分类号： G09F9/33 ,  H01L24/32 ,  H01L33/52 ,  H01L2224/26175 ,  H01L2224/27013 ,  H01L2224/83051 ,  H01L2224/83143 ,  H01L2224/83385 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01055 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10349 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15156 ,  H01L2924/15788 ,  H05K3/305 ,  H01L2924/00

摘要： Provided is a mounting method making it possible to, when an object such as an element, or more particularly, a microscopic object is mounted on a substrate, achieve mounting readily and reliably with high positional precision by: forming an element holding layer 12, which is made of a material whose viscosity can be controlled, on a substrate 11; controlling the viscosity of a first part 12a of the element holding layer 12, which includes a mounting region for an element, into a viscosity making the element naturally movable, and controlling the viscosity of a second part 12b of the element holding layer 12 outside the first part 12a into a viscosity making the element naturally immovable; and after mounting one element 13 in the first part 12a, controlling the viscosity of the first part 12a into the viscosity making the element 13 naturally immovable.

摘要翻译： 提供了一种安装方法，使得当诸如元件的物体，或更具体地，微观物体被安装在基板上时，通过以下方式实现安装：通过以下方式实现安装：通过形成元件保持层12，可以容易且可靠地以高位置精度进行安装 在基板11上由可以控制粘度的材料制成; 将包含元件安装区域的元件保持层12的第一部分12a的粘度控制成使该元件自然移动的粘度，并将元件保持层12的第二部分12b的粘度控制在 第一部分12a成为使该元素自然不动的粘度; 并且在第一部分12a中安装一个元件13之后，将第一部分12a的粘度控制成使得元件13自然不可移动的粘度。

公开(公告)号：US20080050599A1

公开(公告)日：2008-02-28

申请号：US11976246

申请日：2007-10-23

申请人： Etsuo Morita ,  Yousuke Murakami ,  Goshi Biwa ,  Hiroyuki Okuyama ,  Masato Doi ,  Toyoharu Oohata

发明人： Etsuo Morita ,  Yousuke Murakami ,  Goshi Biwa ,  Hiroyuki Okuyama ,  Masato Doi ,  Toyoharu Oohata

IPC分类号： B32B9/04

CPC分类号： H01L21/02538 ,  C30B25/02 ,  C30B25/183 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265

摘要： A crystal foundation having dislocations is used to obtain a crystal film of low dislocation density, a crystal substrate, and a semiconductor device. One side of a growth substrate (11) is provided with a crystal layer (13) with a buffer layer (12) in between. The crystal layer (13) has spaces (13a), (13b) in an end of each threading dislocation D1 elongating from below. The threading dislocation D1 is separated from the upper layer by the spaces (13a), (13b), so that each threading dislocation D1 is blocked from propagating to the upper layer. When the displacement of the threading dislocation D1 expressed by Burgers vector is preserved to develop another dislocation, the spaces (13a), (13b) vary the direction of its displacement. As a result, the upper layer above the spaces (13a), (13b) turns crystalline with a low dislocation density.

公开(公告)号：US07250320B2

公开(公告)日：2007-07-31

申请号：US10512131

申请日：2004-02-19

申请人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Jun Suzuki ,  Toyoharu Oohata

发明人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Jun Suzuki ,  Toyoharu Oohata

IPC分类号： H01L29/22

CPC分类号： H01L33/20 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/24 ,  H01L33/32 ,  H01L2224/48137

摘要： A semiconductor light emitting element, manufacturing method thereof, integrated semiconductor light emitting device, manufacturing method thereof, illuminating device, and manufacturing method thereof are provided.An n-type GaN layer is grown on a sapphire substrate, and a growth mask of SiN, for example, is formed thereon. On the n-type GaN layer exposed through an opening in the growth mask, a six-sided steeple-shaped n-type GaN layer is selectively grown, which has inclined crystal planes each composed of a plurality of crystal planes inclined from the major surface of the sapphire substrate by different angles of inclination to exhibit a convex plane as a whole. On the n-type GaN layer, an active layer and a p-type GaN layer are grown to make a light emitting element structure. Thereafter, a p-side electrode and an n-side electrode are formed.

摘要翻译： 提供半导体发光元件，其制造方法，集成半导体发光器件，其制造方法，照明器件及其制造方法。 在蓝宝石衬底上生长n型GaN层，例如在其上形成SiN的生长掩模。 在通过生长掩模中的开口暴露的n型GaN层上，选择性地生长六边形尖状n型GaN层，其倾斜晶面各自由从主表面倾斜的多个晶面构成 的蓝宝石衬底由不同的倾斜角度整体呈现凸面。 在n型GaN层上生长有源层和p型GaN层以制成发光元件结构。 此后，形成p侧电极和n侧电极。

公开(公告)号：US07129107B2

公开(公告)日：2006-10-31

申请号：US11096381

申请日：2005-03-31

申请人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

发明人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

IPC分类号： H01L29/20 ,  H01L31/036

CPC分类号： H01L33/24 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02409 ,  H01L21/02411 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02642 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/32 ,  H01L2224/48137 ,  H01L2224/48139

摘要： Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.

公开(公告)号：US07087932B2

公开(公告)日：2006-08-08

申请号：US10088463

申请日：2001-07-18

申请人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata

发明人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata

IPC分类号： H01L29/04

CPC分类号： H01L33/24 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02639 ,  H01L33/007 ,  H01L33/08

摘要： A semiconductor light-emitting element is provided which has a structure that does not complicate a fabrication process, can be formed in high precision and does not invite any degradation of crystallinity. A light-emitting element is formed, which includes a selective crystal growth layer formed by selectively growing a compound semiconductor of a Wurtzite type, a clad layer of a first conduction type, an active layer and a clad layer of a second conduction type, which are formed on the selective crystal growth layer wherein the active layer is formed so that the active layer extends in parallel to different crystal planes, the active layer is larger in size than a diffusion length of a constituent atom of a mixed crystal, or the active layer has a difference in at least one of a composition and a thickness thereof, thereby forming the active layer having a number of light-emitting wavelength regions whose emission wavelengths differ from one another. The element is so arranged that an electric current or currents are chargeable into the number of light-emitting wavelength regions. Because of the structure based on the selective growth, the band gap energy varies within the same active layer, thereby forming an element or device in high precision without complicating a fabrication process.

摘要翻译： 提供具有不使制造工艺复杂化的结构的半导体发光元件，可以高精度地形成，并且不会引起结晶性的劣化。 形成发光元件，其包括通过选择性地生长纤锌矿型化合物半导体，第一导电类型的包覆层，有源层和第二导电类型的覆盖层而形成的选择性晶体生长层，其中 形成在选择性晶体生长层上，其中形成有源层使得有源层平行于不同的晶面延伸，活性层的尺寸大于混晶的构成原子的扩散长度，或活性层的活性层 层的组成和厚度中的至少一个具有差异，由此形成具有多个发光波长彼此不同的发光波长区域的有源层。 元件被布置成使得电流或电流可以充电到多个发光波长区域中。 由于基于选择性增长的结构，带隙能量在相同的有源层内变化，从而以高精度形成元件或器件而不会使制造过程复杂化。

公开(公告)号：US20060169997A1

公开(公告)日：2006-08-03

申请号：US11329589

申请日：2006-01-10

申请人： Jun Suzuki ,  Masato Doi ,  Hiroyuki Okuyama ,  Goshi Biwa

发明人： Jun Suzuki ,  Masato Doi ,  Hiroyuki Okuyama ,  Goshi Biwa

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  Y10S257/918

摘要： A semiconductor light-emitting device is provided. The semiconductor light-emitting device includes a laminated semiconductor structure portion composed of at least a first conductivity type first cladding layer, an active layer and a second conductivity type second cladding layer, wherein an outer peripheral surface of this laminated semiconductor structure portion is formed as a curved surface shape which is protrusively curved or bent with respect to the outside of the laminated direction.

摘要翻译： 提供了一种半导体发光器件。 半导体发光装置包括由至少第一导电型第一包层，有源层和第二导电型第二包层构成的层叠半导体结构部，其中，该层叠半导体结构部的外周面形成为 相对于层叠方向的外侧突出地弯曲或弯曲的曲面形状。

公开(公告)号：US07002183B2

公开(公告)日：2006-02-21

申请号：US11077452

申请日：2005-03-09

申请人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata

发明人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata

IPC分类号： H01L33/00

CPC分类号： H01L33/24 ,  H01J63/04 ,  H01J63/06 ,  H01S5/227 ,  H01S5/2272 ,  H01S5/32341

摘要： Semiconductor light emitting devices are provided. The semiconductor light emitting device includes a base body, a selection mask having a stripe-shaped opening portion, the selection mask being formed on the base body, a semiconductor layer formed by selective growth from the opening portion in such a manner as to have a ridge line substantially parallel to long-sides of the opening portion, and a first conductive type cladding layer, an active layer, and a second conductive type cladding layer, which are formed on the semiconductor layer.

摘要翻译： 提供半导体发光器件。 半导体发光器件包括基体，具有条形开口部分的选择掩模，形成在基体上的选择掩模，通过从开口部分选择性地生长形成的半导体层， 大致平行于开口部分的长边的脊线，以及形成在半导体层上的第一导电型包覆层，有源层和第二导电型包覆层。

公开(公告)号：US20050161661A1

公开(公告)日：2005-07-28

申请号：US11077452

申请日：2005-03-09

申请人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata

发明人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata

IPC分类号： G09F9/33 ,  H01L33/08 ,  H01L33/24 ,  H01L33/32 ,  H01L33/36 ,  H01S5/042 ,  H01S5/227 ,  H01S5/323 ,  H01S5/40 ,  H01L29/06

CPC分类号： H01L33/24 ,  H01J63/04 ,  H01J63/06 ,  H01S5/227 ,  H01S5/2272 ,  H01S5/32341

摘要： Semiconductor light emitting devices are provided. The semiconductor light emitting device includes a base body, a selection mask having a stripe-shaped opening portion, the selection mask being formed on the base body, a semiconductor layer formed by selective growth from the opening portion in such a manner as to have a ridge line substantially parallel to long-sides of the opening portion, and a first conductive type cladding layer, an active layer, and a second conductive type cladding layer, which are formed on the semiconductor layer.