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公开(公告)号：US20140162498A1
公开(公告)日：2014-06-12
申请号：US13997893
申请日：2012-03-31
申请人： Raul Enriquez-Shibayama , Kai Xiao , Xiang Li
发明人： Raul Enriquez-Shibayama , Kai Xiao , Xiang Li
IPC分类号： H01R13/6461
CPC分类号： H01R13/6461 , H01R12/737 , H01R13/6471 , H01R2201/06
摘要： Apparatus and methods of arranging ground pins and signal pins in a card connector includes arranging a signal pins and ground pins in a card connector into at least six (6) columns divided between a primary side and a secondary side of the connector.
摘要翻译： 将接地引脚和信号引脚布置在卡连接器中的装置和方法包括将卡连接器中的信号引脚和接地引脚布置成分开在连接器的初级侧和次级侧之间的至少六（6）列。
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公开(公告)号：US09787028B2
公开(公告)日：2017-10-10
申请号：US13997893
申请日：2012-03-31
申请人： Raul Enriquez-Shibayama , Kai Xiao , Xiang Li
发明人： Raul Enriquez-Shibayama , Kai Xiao , Xiang Li
IPC分类号： H01R13/6461 , H01R12/73 , H01R13/6471
CPC分类号： H01R13/6461 , H01R12/737 , H01R13/6471 , H01R2201/06
摘要： Apparatus and methods of arranging ground pins and signal pins in a card connector includes arranging a signal pins and ground pins in a card connector into at least six (6) columns divided between a primary side and a secondary side of the connector.
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公开(公告)号：US20230046581A1
公开(公告)日：2023-02-16
申请号：US17728099
申请日：2022-04-25
申请人： Xiang Li , Shaohua Li , Landon Hanks , Kai Xiao , Mo Liu , Jingbo Li
发明人： Xiang Li , Shaohua Li , Landon Hanks , Kai Xiao , Mo Liu , Jingbo Li
摘要： An apparatus and method for reducing differential cross-talk in a pin arrangement of a socket are described. Socket pins within a differential pair use a modified shape to tighten the intra-pair pin coupling to reduce the crosstalk without changing the pin map. The middle vertical segment of one pin of a diagonally adjacent differential pin pair is modified to be closer to the other pin than other corresponding locations of the pins. The spring beam that extends from the middle vertical segment of the one pin is modified to accommodate the package landing pad that the spring beam contacts to maintain a uniform pitch.
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公开(公告)号：US20150340817A1
公开(公告)日：2015-11-26
申请号：US14286494
申请日：2014-05-23
申请人： Xiang Li , Hao-Han Hsu , Yun Ling , Gong Ouyang , Kai Xiao , Jiangqi He , Lu-Vong T. Phan , Wei Xu
发明人： Xiang Li , Hao-Han Hsu , Yun Ling , Gong Ouyang , Kai Xiao , Jiangqi He , Lu-Vong T. Phan , Wei Xu
IPC分类号： H01R13/6598 , H01R43/18 , H05K3/36 , H01R12/72 , H05K3/28
CPC分类号： H01R13/6598 , H01R12/712 , H01R12/721 , H01R12/724 , H01R13/658 , H01R43/18 , H05K3/284 , H05K3/36 , Y10T29/49128
摘要： In an embodiment, a connector such as an edge connector includes a connector housing, a first set of pins configured within the housing and having first ends to couple to corresponding signal lines of a first circuit board and second ends to couple to corresponding signal lines of a mating connector of a second circuit board, and a conductive material adapted to the housing to reduce interference caused by one or more sources of interference. Other embodiments are described and claimed.
摘要翻译： 在一个实施例中，诸如边缘连接器的连接器包括连接器壳体，构造在壳体内的第一组引脚，并且具有耦合到第一电路板的相应信号线的第一端和第二端耦合到相应的信号线 第二电路板的配合连接器以及适于壳体的导电材料，以减少由一个或多个干扰源造成的干扰。 描述和要求保护其他实施例。
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公开(公告)号：US20160183374A1
公开(公告)日：2016-06-23
申请号：US14575775
申请日：2014-12-18
申请人： Mani Prakash , Thomas T. Holden , Jeffory L. Smalley , Ram S. Viswanath , Bassam N. Coury , Dimitrios Ziakas , Chong J. Zhao , Jonathan W. Thibado , Gregorio R. Murtagian , Kuang C. Liu , Rajasekaran Swaminathan , Zhichao Zhang , John M. Lynch , David J. Llapitan , Sanka Ganesan , Xiang Li , George Vergis
发明人： Mani Prakash , Thomas T. Holden , Jeffory L. Smalley , Ram S. Viswanath , Bassam N. Coury , Dimitrios Ziakas , Chong J. Zhao , Jonathan W. Thibado , Gregorio R. Murtagian , Kuang C. Liu , Rajasekaran Swaminathan , Zhichao Zhang , John M. Lynch , David J. Llapitan , Sanka Ganesan , Xiang Li , George Vergis
CPC分类号： H05K1/181 , H01L23/00 , H01L23/498 , H01L2224/16225 , H01L2924/15311 , H01R12/712 , H01R12/79 , H05K2201/10159 , H05K2201/10325 , Y02P70/611
摘要： Configurable central processing unit (CPU) package substrates are disclosed. A package substrate is described that includes a processing device interface. The package substrate also includes a memory device electrical interface disposed on the package substrate. The package substrate also includes a removable memory mechanical interface disposed proximately to the memory device electrical interface. The removable memory mechanical interface is to allow a memory device to be easily removed from the package substrate after attachment of the memory device to the package substrate.
摘要翻译： 公开了可配置的中央处理单元（CPU）封装基板。 描述了包括处理设备接口的封装衬底。 封装衬底还包括设置在封装衬底上的存储器件电接口。 封装衬底还包括靠近存储器件电接口设置的可移除存储器机械接口。 可移除存储器机械接口是允许在将存储器件附接到封装衬底之后容易地从封装衬底移除存储器件。
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公开(公告)号：US09281540B2
公开(公告)日：2016-03-08
申请号：US13514973
申请日：2010-12-06
申请人： Xiang Li , Jie Tang , Qingjin Sun , Sheng Xu , Jianhai Luo
发明人： Xiang Li , Jie Tang , Qingjin Sun , Sheng Xu , Jianhai Luo
CPC分类号： H01M10/0525 , H01M2/1653 , H01M2/166 , H01M2/1686 , H01M4/13 , H01M4/133 , H01M4/136 , H01M4/485 , H01M4/587 , H01M4/62 , H01M4/625 , H01M4/661 , H01M10/056 , H01M2300/0068 , H01M2300/0091 , Y02E60/122
摘要： A lithium-ion battery comprises a positive electrode, a negative electrode, an electrolyte system and an ion-selective conducting layer disposed between the positive electrode and the negative electrode. The ion-selective conducting layer consists of high polymers and an inorganic lithium salt having lithium-ion conductivity, or consists of the inorganic lithium salt. The inorganic lithium salt includes LimMnOx, wherein the values of the m and n ensure the LimMnOx an electrically neutral compound, M is selected from at least one of B, P, Si, Se, Zr, W, Ti, Te, Ta, Al and As. The lithium-ion battery has a conduction layer having preference-selective conductivity for the lithium ions and disposed between the positive electrode and the negative electrode. The selective-conduction layer has improved mobility for lithium ions. Metal ions generated from the oxidized metal current collector at the negative electrode due to the over-charging of the battery can be blocked.
摘要翻译： 锂离子电池包括正极，负极，电解质体系和配置在正极和负极之间的离子选择性导电层。 离子选择导电层由高分子聚合物和具有锂离子传导性的无机锂盐组成，或由无机锂盐组成。 无机锂盐包括LimMnOx，其中m和n的值确保LimMnOx为电中性的化合物，M选自B，P，Si，Se，Zr，W，Ti，Te，Ta，Al中的至少一种 并作为。 锂离子电池具有对于锂离子具有优选选择性导电性的导电层并且设置在正极和负极之间。 选择导电层具有改善的锂离子的迁移率。 可以阻止由于电池的过充电而从负极处的氧化金属集电体产生的金属离子。
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公开(公告)号：US09153697B2
公开(公告)日：2015-10-06
申请号：US13116506
申请日：2011-05-26
申请人： Fujio Masuoka , Hiroki Nakamura , Shintaro Arai , Tomohiko Kudo , King-Jien Chui , Yisuo Li , Yu Jiang , Xiang Li , Zhixian Chen , Nansheng Shen , Vladimir Bliznetsov , Kavitha Devi Buddharaju , Navab Singh
发明人： Fujio Masuoka , Hiroki Nakamura , Shintaro Arai , Tomohiko Kudo , King-Jien Chui , Yisuo Li , Yu Jiang , Xiang Li , Zhixian Chen , Nansheng Shen , Vladimir Bliznetsov , Kavitha Devi Buddharaju , Navab Singh
IPC分类号： H01L21/70 , H01L29/786 , H01L21/8238 , H01L29/423 , H01L29/49 , H01L29/66 , H01L21/265
CPC分类号： H01L29/42392 , H01L21/26586 , H01L21/823814 , H01L21/823828 , H01L21/823871 , H01L21/823885 , H01L27/088 , H01L27/092 , H01L29/42384 , H01L29/4908 , H01L29/4958 , H01L29/66666 , H01L29/66772 , H01L29/78618 , H01L29/78642 , H01L29/78696
摘要： The semiconductor device according to the present invention is an nMOS SGT and is composed of a first n+ type silicon layer, a first gate electrode containing metal and a second n+ type silicon layer arranged on the surface of a first columnar silicon layer positioned vertically on a first planar silicon layer. Furthermore, a first insulating film is positioned between the first gate electrode and the first planar silicon layer, and a second insulating film is positioned on the top surface of the first gate electrode. In addition, the first gate electrode containing metal is surrounded by the first n+ type silicon layer, the second n+ type silicon layer, the first insulating film and the second insulating film.
摘要翻译： 根据本发明的半导体器件是nMOS SGT，并且由第一n +型硅层，含有金属的第一栅电极和第二n +型硅层构成，所述第二n +型硅层布置在垂直定位在第一n +型硅层上的第一柱状硅层的表面上 第一平面硅层。 此外，第一绝缘膜位于第一栅电极和第一平面硅层之间，第二绝缘膜位于第一栅电极的顶表面上。 此外，含有第一栅电极的金属被第一n +型硅层，第二n +型硅层，第一绝缘膜和第二绝缘膜包围。
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公开(公告)号：US09044528B2
公开(公告)日：2015-06-02
申请号：US13131919
申请日：2009-11-30
申请人： Minoo Esat , William Bonfield , Mohan Edirisinghe , Jie Huang , Xiang Li
发明人： Minoo Esat , William Bonfield , Mohan Edirisinghe , Jie Huang , Xiang Li
IPC分类号： B32B3/24 , B32B5/00 , B32B17/06 , B32B18/00 , B32B15/04 , B32B3/30 , A61L27/32 , A61L27/50 , A61F2/28 , A61L27/04 , A61F2/30 , A61L27/06 , A61L27/30 , A61L27/34
CPC分类号： A61L27/04 , A61F2/30767 , A61F2/3094 , A61F2002/30929 , A61F2002/3093 , A61F2310/00011 , A61F2310/00796 , A61L27/06 , A61L27/306 , A61L27/32 , A61L27/34 , Y10T428/24331 , Y10T428/24521 , Y10T428/24612 , Y10T428/265 , Y10T428/31507
摘要： An article comprising: a substrate; and over at least part of a surface of said substrate an outer coating of hydroxyapatite and an intermediate bonding layer bonded to said substrate and to said outer coating, wherein a mechanical interlock is present between said substrate and said outer coating.
摘要翻译： 一种制品，包括：基材; 并且在所述基底的至少一部分表面上，羟基磷灰石的外涂层和结合到所述基底和所述外涂层的中间粘合层，其中在所述基底和所述外涂层之间存在机械互锁。
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9.发明授权公开(公告)号：US08728256B2
公开(公告)日：2014-05-20
申请号：US13392868
申请日：2010-08-04
申请人： Yun Che , Zhongke Zhang , Sanquan Men , Xinmeng Chen , Guangyou Xu , Xiang Li
发明人： Yun Che , Zhongke Zhang , Sanquan Men , Xinmeng Chen , Guangyou Xu , Xiang Li
摘要： A heat-resistant aluminum alloy material with high strength and preparation method thereof are provided. The aluminum alloy material comprises (by weight %): Cu: 1.0˜10.0, Mn: 0.05˜1.5, Cd: 0.01˜0.5, Ti: 0.01˜0.5%, B: 0.01˜0.2 or C: 0.0001˜0.15, Zr: 0.01˜1.0, R: 0.001˜3 or (R1+R2): 0.001˜3, RE: 0.05˜5, and balance Al:, wherein, R, R1, and R2 include Be, Co, Cr, Li, Mo, Nb, Ni, W. The Al alloy has the advantages of narrow quasi-solid phases temperature range of alloys, low hot cracking liability during casting improved high temperature strength and high heat resistance.
摘要翻译： 提供了具有高强度的耐热铝合金材料及其制备方法。 铝合金材料包含（重量％）：Cu：1.0〜10.0，Mn：0.05〜1.5，Cd：0.01〜0.5，Ti：0.01〜0.5％，B：0.01〜0.2或C：0.0001〜0.15，Zr： 0.01〜1.0，R：0.001〜3或（R1 + R2）：0.001〜3，RE：0.05〜5，余量为Al：其中，R，R1，R2包括Be，Co，Cr，Li，Mo， Nb，Ni，W。Al合金具有合金准相固态温度范围窄，铸造时低热裂纹性能提高耐高温强度和高耐热性的优点。
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公开(公告)号：US08697911B2
公开(公告)日：2014-04-15
申请号：US13171696
申请日：2011-06-29
申请人： Brian Nicholas Cook , Jennifer A. Kowalski , Xiang Li , Daniel Richard Marshall , Sabine Schlyer , Robert Sibley , Lana Louise Smith-Keenan , Fariba Soleymanzadeh , Ronald John Sorcek , Erick Richard Roush Young , Yunlong Zhang
发明人： Brian Nicholas Cook , Jennifer A. Kowalski , Xiang Li , Daniel Richard Marshall , Sabine Schlyer , Robert Sibley , Lana Louise Smith-Keenan , Fariba Soleymanzadeh , Ronald John Sorcek , Erick Richard Roush Young , Yunlong Zhang
IPC分类号： A01N37/18 , A61K31/165 , C07C239/00 , C07C279/16 , C07D473/00 , C07D417/00 , C07C45/78 , C07C271/06 , C07D271/12 , C07D413/00 , C07D271/00 , C07D285/02 , C07D285/04 , C07D498/00 , C07D513/00 , C07D277/82 , C07D263/60 , C07D249/04 , C07D249/08 , C07D233/02 , C07D231/00
CPC分类号： C07D217/04 , C07D401/12 , C07D401/14 , C07D405/12 , C07D409/14 , C07D413/12 , C07D413/14 , C07D417/12 , C07D417/14 , C07D471/04 , C07D487/04 , C07D513/04 , C07D519/00
摘要： The present invention relates to compounds of formula (I): and pharmaceutically acceptable salts thereof, wherein R1 and R2 are as defined herein. The invention also relates to pharmaceutical compositions comprising these compounds, methods of using these compounds in the treatment of various diseases and disorders, processes for preparing these compounds and intermediates useful in these processes.
摘要翻译： 本发明涉及式（I）化合物及其药学上可接受的盐，其中R 1和R 2如本文所定义。 本发明还涉及包含这些化合物的药物组合物，使用这些化合物治疗各种疾病和病症的方法，制备这些化合物的方法和可用于这些方法的中间体。
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