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    Method of forming a dual damascene structure using an amorphous silicon hard mask
    1.
    发明授权
    Method of forming a dual damascene structure using an amorphous silicon hard mask 失效
    使用非晶硅硬掩模形成双镶嵌结构的方法

    公开(公告)号：US06806203B2

    公开(公告)日：2004-10-19

    申请号：US10101540

    申请日：2002-03-18

    申请人： Timothy Weidman ,  Nikolaos Bekiaris ,  Josephine Chang ,  Phong H. Nguyen

    发明人： Timothy Weidman ,  Nikolaos Bekiaris ,  Josephine Chang ,  Phong H. Nguyen

    IPC分类号： H01L21302

    CPC分类号： H01L21/76835 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76829

    摘要： A method of forming a dual damascene structure on a substrate having a dielectric layer already formed thereon. In one embodiment the method includes depositing a first hard mask layer over the dielectric layer and depositing a second hard mask layer on the first hard mask layer, where the second hard mask layer is an amorphous silicon layer. Afterwards, formation of the dual damascene structure is completed by etching a metal wiring pattern and a via pattern in the dielectric layer and filling the etched metal wiring pattern and via pattern with a conductive material.

    摘要翻译： 在其上已经形成有电介质层的基板上形成双镶嵌结构的方法。 在一个实施例中，该方法包括在电介质层上沉积第一硬掩模层并在第一硬掩模层上沉积第二硬掩模层，其中第二硬掩模层是非晶硅层。 然后，通过在电介质层中蚀刻金属布线图案和通孔图案并用导电材料填充蚀刻的金属布线图案和通孔图案来完成双镶嵌结构的形成。

    Ionic additives for extreme low dielectric constant chemical formulations
    5.
    发明授权
    Ionic additives for extreme low dielectric constant chemical formulations 失效
    用于极低介电常数化学配方的离子添加剂

    公开(公告)号：US06896955B2

    公开(公告)日：2005-05-24

    申请号：US10219164

    申请日：2002-08-13

    申请人： Robert P. Mandal ,  Alexandros T. Demos ,  Timothy Weidman ,  Michael P. Nault ,  Nikolaos Bekiaris ,  Scott J. Weigel ,  Lee A. Senecal ,  James E. MacDougal ,  Hareesh Thridandam

    发明人： Robert P. Mandal ,  Alexandros T. Demos ,  Timothy Weidman ,  Michael P. Nault ,  Nikolaos Bekiaris ,  Scott J. Weigel ,  Lee A. Senecal ,  James E. MacDougal ,  Hareesh Thridandam

    IPC分类号： B05D5/12 ,  B05D7/24 ,  C01B33/16 ,  C09D5/25 ,  C09D183/02 ,  H01L21/20 ,  H01L21/314 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  B32B3/00

    CPC分类号： H01L21/02126 ,  C01B33/16 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/31695 ,  Y10S438/96 ,  Y10T428/249953 ,  Y10T428/249969

    摘要： A process for depositing porous silicon oxide-based films using a sol-gel approach utilizing a precursor solution formulation which includes a purified nonionic surfactant and an additive among other components, where the additive is either an ionic additive or an amine additive which forms an ionic ammonium type salt in the acidic precursor solution. Using this precursor solution formulation enables formation of a film having a dielectric constant less than 2.5, appropriate mechanical properties, and minimal levels of alkali metal impurities. In one embodiment, this is achieved by purifying the surfactant and adding ionic or amine additives such as tetraalkylammonium salts and amines to the stock precursor solution. In some embodiments, the ionic additive is a compound chosen from a group of cationic additives of the general composition [NR(CH3)3]+A−, where R is a hydrophobic ligand of chain length 1 to 24, including tetramethylammonium and cetyltrimethylammonium, and A− is an anion, which may be chosen from the group consisting essentially of formate, nitrate, oxalate, acetate, phosphate, carbonate, and hydroxide and combinations thereof. Tetramethylammonium salts, or more generally tetraalkylammonium salts, or tetraorganoammonium salts or organoamines in acidic media are added to surfactant templated porous oxide precursor formulations to increase the ionic content, replacing alkali ion impurities (sodium and potassium) removed during surfactant purification, but which are found to exhibit beneficial effects in promoting the formation of the resulting dielectric.

    摘要翻译： 一种使用溶胶 - 凝胶方法沉积多孔氧化硅基膜的方法，该方法使用前体溶液制剂，其包含纯化的非离子表面活性剂和其它组分中的添加剂，其中添加剂是形成离子的离子添加剂或胺添加剂 铵型盐在酸性前体溶液中。 使用这种前体溶液制剂可以形成介电常数小于2.5，适当的机械性能和最低水平的碱金属杂质的薄膜。 在一个实施方案中，这通过纯化表面活性剂并将离子或胺添加剂例如四烷基铵盐和胺添加到原料前体溶液中来实现。 在一些实施方案中，离子添加剂是选自一般组成的阳离子添加剂组合物[NR（CH 3）3） 其中R是链长1至24的疏水性配体，包括四甲基铵和十六烷基三甲基铵，并且A是一种阴离子，其可以选自下组： 基本上由甲酸盐，硝酸盐，草酸盐，乙酸盐，磷酸盐，碳酸盐和氢氧化物组成。 在表面活性剂模板化的多孔氧化物前体制剂中加入四甲基铵盐或更一般的四烷基铵盐或四官能铵盐或有机胺，以增加离子含量，代替在表面活性剂纯化过程中除去的碱离子杂质（钠和钾），但发现 以促进所形成的电介质的形成。

    Solar cell emitter region fabrication using self-aligned implant and cap
    6.
    发明授权
    Solar cell emitter region fabrication using self-aligned implant and cap 有权
    使用自对准植入物和帽的太阳能电池发射体区域制造

    公开(公告)号：US09577134B2

    公开(公告)日：2017-02-21

    申请号：US14100540

    申请日：2013-12-09

    申请人： Timothy Weidman

    发明人： Timothy Weidman

    IPC分类号： H01L31/068 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0352 ,  H01L31/18

    CPC分类号： H01L31/022433 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/028 ,  H01L31/035272 ,  H01L31/03682 ,  H01L31/04 ,  H01L31/068 ,  H01L31/182 ,  H01L31/1876 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

    摘要： Methods of fabricating solar cell emitter regions using self-aligned implant and cap, and the resulting solar cells, are described. In an example, a method of fabricating an emitter region of a solar cell involves forming a silicon layer above a substrate. The method also involves implanting, through a stencil mask, dopant impurity atoms in the silicon layer to form implanted regions of the silicon layer with adjacent non-implanted regions. The method also involves forming, through the stencil mask, a capping layer on and substantially in alignment with the implanted regions of the silicon layer. The method also involves removing the non-implanted regions of the silicon layer, wherein the capping layer protects the implanted regions of the silicon layer during the removing. The method also involves annealing the implanted regions of the silicon layer to form doped polycrystalline silicon emitter regions.

    摘要翻译： 描述了使用自对准植入物和盖子制造太阳能电池发射极区域的方法，以及所得到的太阳能电池。 在一个实例中，制造太阳能电池的发射极区域的方法包括在衬底上形成硅层。 该方法还涉及通过模板掩模注入硅层中的掺杂剂杂质原子以形成具有相邻非注入区域的硅层的注入区域。 该方法还涉及通过模板掩模形成在硅层的注入区域上并基本上与硅层的注入区域基本上对准的覆盖层。 该方法还涉及去除硅层的非注入区域，其中封盖层在去除期间保护硅层的注入区域。 该方法还包括退火硅层的注入区域以形成掺杂的多晶硅发射极区域。

    Solar cell emitter region fabrication using ion implantation
    7.
    发明授权
    Solar cell emitter region fabrication using ion implantation 有权
    使用离子注入的太阳能电池发射极区域制造

    公开(公告)号：US09577126B2

    公开(公告)日：2017-02-21

    申请号：US15000492

    申请日：2016-01-19

    申请人： David D. Smith ,  Timothy Weidman ,  Staffan Westerberg

    发明人： David D. Smith ,  Timothy Weidman ,  Staffan Westerberg

    IPC分类号： H01L31/0368 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/0236 ,  H01L31/0288 ,  H01L31/0745 ,  H01L31/0747

    CPC分类号： H01L31/03685 ,  H01L31/022441 ,  H01L31/022458 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/0288 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/1804 ,  H01L31/1824 ,  H01L31/1864 ,  H01L31/1872 ,  Y02E10/50 ,  Y02E10/547 ,  Y02P70/521

    摘要： Methods of fabricating solar cell emitter regions using ion implantation, and resulting solar cells, are described. In an example, a back contact solar cell includes a crystalline silicon substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region is disposed above the crystalline silicon substrate. The first polycrystalline silicon emitter region is doped with dopant impurity species of a first conductivity type and further includes ancillary impurity species different from the dopant impurity species of the first conductivity type. A second polycrystalline silicon emitter region is disposed above the crystalline silicon substrate and is adjacent to but separated from the first polycrystalline silicon emitter region. The second polycrystalline silicon emitter region is doped with dopant impurity species of a second, opposite, conductivity type. First and second conductive contact structures are electrically connected to the first and second polycrystalline silicon emitter regions, respectively.

    摘要翻译： 描述了使用离子注入制造太阳能电池发射极区域的方法，以及所得到的太阳能电池。 在一个示例中，背接触太阳能电池包括具有光接收表面和背表面的晶体硅衬底。 第一多晶硅发射极区域设置在晶体硅衬底之上。 第一多晶硅发射极区掺杂有第一导电类型的掺杂剂杂质种类，并且还包括与第一导电类型的掺杂杂质种类不同的辅助杂质种类。 第二多晶硅发射极区域设置在晶体硅衬底之上并且与第一多晶硅发射极区域相邻但分离。 第二多晶硅发射极区掺杂有第二相反导电类型的掺杂杂质物质。 第一和第二导电接触结构分别电连接到第一和第二多晶硅发射极区域。

    SOLAR CELL EMITTER REGION FABRICATION USING ION IMPLANTATION
    8.
    发明申请
    SOLAR CELL EMITTER REGION FABRICATION USING ION IMPLANTATION 审中-公开

    公开(公告)号：US20160315214A1

    公开(公告)日：2016-10-27

    申请号：US15197616

    申请日：2016-06-29

    申请人： Timothy Weidman ,  David D. Smith

    发明人： Timothy Weidman ,  David D. Smith

    IPC分类号： H01L31/18 ,  H01L31/068

    CPC分类号： H01L31/182 ,  H01L31/022441 ,  H01L31/035272 ,  H01L31/0682 ,  H01L31/1864 ,  H01L31/1872 ,  H01L31/1876 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

    摘要： Methods of fabricating solar cell emitter regions using ion implantation, and resulting solar cells, are described. In an example, a method of fabricating alternating N-type and P-type emitter regions of a solar cell involves forming a silicon layer above a substrate. Dopant impurity atoms of a first conductivity type are implanted, through a first shadow mask, in the silicon layer to form first implanted regions and resulting in non-implanted regions of the silicon layer. Dopant impurity atoms of a second, opposite, conductivity type are implanted, through a second shadow mask, in portions of the non-implanted regions of the silicon layer to form second implanted regions and resulting in remaining non-implanted regions of the silicon layer. The remaining non-implanted regions of the silicon layer are removed with a selective etch process, while the first and second implanted regions of the silicon layer are annealed to form doped polycrystalline silicon emitter regions.

    Process for electroless copper deposition
    10.
    发明申请
    Process for electroless copper deposition 有权
    无电镀铜工艺

    公开(公告)号：US20070004201A1

    公开(公告)日：2007-01-04

    申请号：US11385037

    申请日：2006-03-20

    申请人： Dmitry Lubomirsky ,  Timothy Weidman ,  Arulkumar Shanmugasundram ,  Nicolay Kovarsky ,  Kapila Wijekoon

    发明人： Dmitry Lubomirsky ,  Timothy Weidman ,  Arulkumar Shanmugasundram ,  Nicolay Kovarsky ,  Kapila Wijekoon

    IPC分类号： H01L21/44

    CPC分类号： H01L21/288 ,  C23C18/1608 ,  C23C18/165 ,  C23C18/1831 ,  C23C18/38 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76874

    摘要： Embodiments of the invention provide methods for forming conductive materials within contact features on a substrate by depositing a seed layer within a feature and subsequently filling the feature with a copper-containing material during an electroless deposition process. In one example, a copper electroless deposition solution contains levelers to form convexed or concaved copper surfaces. In another example, a seed layer is selectively deposited on the bottom surface of the aperture while leaving the sidewalls substantially free of the seed material during a collimated PVD process. In another example, the seed layer is conformably deposited by a PVD process and subsequently, a portion of the seed layer and the underlayer are plasma etched to expose an underlying contact surface. In another example, a ruthenium seed layer is formed on an exposed contact surface by an ALD process utilizing the chemical precursor ruthenium tetroxide.

    摘要翻译： 本发明的实施例提供了通过在特征内沉积种子层并随后在无电沉积工艺期间用含铜材料填充该特征而在基底上的接触特征内形成导电材料的方法。 在一个实例中，铜无电解沉积溶液含有形成凸形或凹陷铜表面的矫直机。 在另一个实例中，在准直的PVD工艺期间，将籽晶层选择性地沉积在孔的底表面上，同时留下基本上不含种子材料的侧壁。 在另一个实例中，种子层通过PVD工艺顺应地沉积，随后种子层和底层的一部分被等离子体蚀刻以暴露下面的接触表面。 在另一个实例中，通过使用化学前体四氧化钌的ALD工艺在暴露的接触表面上形成钌籽晶层。