摘要:
A voltage controlled oscillator including a resonator which generates an oscillation signal, a frequency of which is in response to a control signal, and an amplifier which amplifies the oscillation signal. Also included is a frequency adjusting mechanism, as well as a voltage control sensitivity mechanism. In one example, the resonator includes an input terminal to which the control signal is applied, a variable capacitance diode and a main inductor. The oscillation frequency adjusting mechanism includes a first variable capacitor, arranged in parallel with the main inductor of the resonator. In addition, the voltage control sensitivity adjusting mechanism includes a second variable capacitor arranged between the input terminal and the amplifying mechanism, and also arranged between a hot terminal of the variable capacitance diode and a hot terminal of the main inductor.
摘要:
A semiconductor-embedded substrate device according to the present invention can relax a thermal stress during fabrication or use and therefore has sufficient heat radiation properties and reliability. A semiconductor-embedded substrate (100) is a multilayer substrate obtained by stacking resin layers and has, inside of the resin layer (2), a semiconductor device (30) having a bump (32) connected to a terminal electrode (11) via an internal wiring (13) and connection plug (12). A heat radiation member (20) having an opening P in which one or more openings H have been formed is arranged immediately above and opposite to the back surface (30b) of the semiconductor device (30) and heat generated therein is transferred to and released from the heat radiation member (20).
摘要:
An inductor element containing circuit board of the present invention comprises a plurality of conductive layers, and a conductor having an inductor function (inductor conductor segment) in one or more of the conductive layers, wherein at least part of the inductor conductor segment is made thicker than other conductors disposed within the circuit board. The at least part of the inductor conductor segment extends through an insulating layer disposed between the conductive layers, or is embedded in the insulating layer, wherein the part of the inductor conductor segment has a thickness one-half or more the thickness of the insulating layer. A power amplifier module of the present invention comprises the multi-layer circuit board, a semiconductor amplifier fabricated in the multi-layer circuit board, and an impedance matching circuit coupled to the output of the semiconductor amplifier. The impedance matching circuit has a portion thereof formed of the inductor conductor segment.
摘要:
A small-sized, front-end module is offered which is for use in a wireless communication device such as a mobile phone and which can suppress harmonics to a sufficiently low level. The front-end module has at least a switching circuit for switching one antenna between a transmiting system and a receiving system, a power amplifier for power-amplifying a transmission signal, and a low-pass filter inserted between the switching circuit and power amplifier. These components are integrated. A first kind of harmonics is produced from the switching circuit toward the power amplifier and reflected by the low-pass filter. A second kind of harmonics is produced from the power amplifier toward the antenna. A third kind of harmonics is produced from the switching circuit toward the antenna. The third kind of harmonics is canceled by the reflected first kind of harmonics and the second kind of harmonics.
摘要:
A multilayer substrate according to the present invention includes a plurality of laminated insulating layers and conductive patterns formed between the respective insulating layers. The conductive patterns include a first conductive pattern having a predetermined thickness and a second conductive pattern thicker than the first conductive pattern. The first and second conductive patterns are located in the same layer. The first conductive pattern is formed by pattern-etching a conductive layer having a uniform thickness by the subtractive method. The second conductive pattern is formed by forming a pattern-forming groove and then filling the inside of the pattern-forming groove with a conductive material simultaneously with forming a via hole. The first conductive pattern is suitable for an LC pattern for a high-frequency circuit requiring small variations in the width and the thickness of the pattern as well as accuracy in the thickness relative to an insulating pattern, and for a normal conductive pattern requiring impedance matching. The second conductive pattern is suitable for an L pattern for a choke coil.
摘要:
A multilayer substrate according to the present invention includes a plurality of laminated insulating layers and conductive patterns formed between the respective insulating layers. The conductive patterns include a first conductive pattern having a predetermined thickness and a second conductive pattern thicker than the first conductive pattern. The first and second conductive patterns are located in the same layer. The first conductive pattern is formed by pattern-etching a conductive layer having a uniform thickness by the subtractive method. The second conductive pattern is formed by forming a pattern-forming groove and then filling the inside of the pattern-forming groove with a conductive material simultaneously with forming a via hole. The first conductive pattern is suitable for an LC pattern for a high-frequency circuit requiring small variations in the width and the thickness of the pattern as well as accuracy in the thickness relative to an insulating pattern, and for a normal conductive pattern requiring impedance matching. The second conductive pattern is suitable for an L pattern for a choke coil.
摘要:
A semiconductor IC-embedded module 100 comprises a multilayer substrate 101 having first and second insulating layers 101a and 101b, and a controller IC 012 and memory IC 103 that are embedded in the multilayer substrate 101. A wiring layer 104 is formed as an internal layer in the multilayer substrate 101. Part of the wiring layer 104 constitutes a bus line 104X. The controller IC 102 or memory IC 103 is embedded in the second insulating layer 101b. First and second ground layers 105a and 105b are provided respectively in the first and second insulating layers 101a and 101b. The effect of noise generated by bus lines is reduced, and an additional reduction in noise and a decrease in size and thickness are achieved by laying out bus lines that connect the semiconductor ICs so that distances are minimized.
摘要:
An inductor element containing circuit board of the present invention comprises a plurality of conductive layers, and a conductor having an inductor function (inductor conductor segment) in one or more of the conductive layers, wherein at least part of the inductor conductor segment is made thicker than other conductors disposed within the circuit board. The at least part of the inductor conductor segment extends through an insulating layer disposed between the conductive layers, or is embedded in the insulating layer, wherein the part of the inductor conductor segment has a thickness one-half or more the thickness of the insulating layer. A power amplifier module of the present invention comprises the multi-layer circuit board, a semiconductor amplifier fabricated in the multi-layer circuit board, and an impedance matching circuit coupled to the output of the semiconductor amplifier. The impedance matching circuit has a portion thereof formed of the inductor conductor segment.
摘要:
The present invention is to provide a surface mounting part, capable of corresponding to high density mounting of a mother board and capable of achieving a small size, to be mounted on a mother board by reflow. Electronic parts are mounted on both sides of a printed board. Terminal electrodes of the electronic parts mounted on the rear side are provided as terminals for connecting with the mother board.
摘要:
A flat wave absorber having a conductive plate, a dielectric plate on the conductive plate, and, a ferrite plate on said dielectric plate, provides a wide operational frequency range from 30 MHz to 1 GHz with excellent attenuation characteristics, and an anechoic chamber mounting said wave absorber on inside surface of the chamber is provided. Thickness of said dielectric plate is less than 25 mm, the thickness of said ferrite plate is less than 7.5 mm, and real part of complex impedance of said ferrite plate on the conductive plate is less than 1.0 and close to 1.0. Said ferrite plate is attached to said dielectric plate in the form of tiles.