摘要:
A circuit component built-in module includes: a first electrical insulating substrate made of a mixture containing an inorganic filler and a thermosetting resin; a plurality of wiring patterns formed at least on a principal surface of the first electrical insulating substrate; a semiconductor chip incorporated in the first electrical insulating substrate and connected electrically with the wiring patterns; and inner vias electrically connecting the plurality of wiring patterns with one another, the inner vias passing through the first electrical insulating substrate. In the circuit component built-in module, the semiconductor chip has a thickness of not less than 30 μm and not more than 100 μm, and has a non-wired surface ground, and the circuit component built-in module has a thickness in a range of not less than 80 μm and not more than 200 μm. With this configuration, the high-performance and compact-size circuit component built-in module in which circuit components are mounted at a high density is provided so as to be used suitably in various types of electronic information devices.
摘要:
A component built-in module includes an insulating layer, wirings integrated with both surfaces of the insulating layer, a via connecting the wirings, and one or more components selected from an electronic component and a semiconductor, which is embedded inside of the insulating layer. In this module, at least one of the wirings is formed on a surface of a wiring board, and the components embedded inside of the insulating layer are mounted on and integrated with the wiring board before embedding. This configuration allows the components such as a semiconductor to undergo a mounting inspection and a property inspection before embedding. As a result, the yields of the module can be improved. In addition, since the components are integrated with the wiring board and embedded, the strength thereof can be enhanced.
摘要:
A semiconductor device (1) of the present invention includes a semiconductor element (103) including electrode parts (104), and a wiring substrate (108) including an insulation layer (101), electrode-part-connection electrodes (102) provided in the insulation layer (101), and external electrodes (107) that is provided in the insulation layer (101) and that is connected electrically with the electrode-part-connection electrodes (102), in which the electrode parts (104) and the electrode-part-connection electrodes (102) are connected electrically with each other. The insulation layer (101) has an elastic modulus measured according to JIS K6911 of not less than 0.1 GP a and not more than 5 GPa, and the electrodes (104) and the electrode-part-connection electrodes (102) are connected by metal joint.
摘要:
A component built-in module includes an insulating layer, wirings integrated with both surfaces of the insulating layer, a via connecting the wirings, and one or more components selected from an electronic component and a semiconductor, which is embedded inside of the insulating layer. In this module, at least one of the wirings is formed on a surface of a wiring board, and the components embedded inside of the insulating layer are mounted on and integrated with the wiring board before embedding. This configuration allows the components such as a semiconductor to undergo a mounting inspection and a property inspection before embedding. As a result, the yields of the module can be improved. In addition, since the components are integrated with the wiring board and embedded, the strength thereof can be enhanced.
摘要:
A semiconductor device (1) of the present invention includes a semiconductor element (103) including electrode parts (104), and a wiring substrate (108) including an insulation layer (101), electrode-part-connection electrodes (102) provided in the insulation layer (101), and external electrodes (107) that is provided in the insulation layer (101) and that is connected electrically with the electrode-part-connection electrodes (102), in which the electrode parts (104) and the electrode-part-connection electrodes (102) are connected electrically with each other. The insulation layer (101) has an elastic modulus measured according to JIS K6911 of not less than 0.1 GP a and not more than 5 GPa, and the electrodes (104) and the electrode-part-connection electrodes (102) are connected by metal joint.
摘要:
A semiconductor device (1) of the present invention includes a semiconductor element (103) including electrode parts (104), and a wiring substrate (108) including an insulation layer (101), electrode-part-connection electrodes (102) provided in the insulation layer (101), and external electrodes (107) that is provided in the insulation layer (101) and that is connected electrically with the electrode-part-connection electrodes (102), in which the electrode parts (104) and the electrode-part-connection electrodes (102) are connected electrically with each other. The insulation layer (101) has an elastic modulus measured according to JIS K6911 of not less than 0.1 GP a and not more than 5 GPa, and the electrodes (104) and the electrode-part-connection electrodes (102) are connected by metal joint.
摘要:
A component built-in module includes an insulating layer, wirings integrated with both surfaces of the insulating layer, a via connecting the wirings, and one or more components selected from an electronic component and a semiconductor, which is embedded inside of the insulating layer. In this module, at least one of the wirings is formed on a surface of a wiring board, and the components embedded inside of the insulating layer are mounted on and integrated with the wiring board before embedding. This configuration allows the components such as a semiconductor to undergo a mounting inspection and a property inspection before embedding. As a result, the yields of the module can be improved. In addition, since the components are integrated with the wiring board and embedded, the strength thereof can be enhanced.
摘要:
An insulation sheet for use in producing a wiring substrate comprises, as via bole conductors, conductive paste filled in via holes formed through the insulation sheet, and a curing-starting temperature of the conductive paste is lower than a melting-starting temperature of the insulation sheet. A wiring substrate is produced by laminating such insulation sheets, that have conductive paste in via holes, and subjecting this laminate to thermo-compression bonding, wherein deformation of via holes and dislocation of the via holes, because of a molten insulation sheet, does not occur.
摘要:
A circuit component built-in module includes: a first electrical insulating substrate made of a mixture containing an inorganic filler and a thermosetting resin; a plurality of wiring patterns formed at least on a principal surface of the first electrical insulating substrate; a semiconductor chip incorporated in the first electrical insulating substrate and connected electrically with the wiring patterns; and inner vias electrically connecting the plurality of wiring patterns with one another, the inner vias passing through the first electrical insulating substrate. In the circuit component built-in module, the semiconductor chip has a thickness of not less than 30 &mgr;m and not more than 100 &mgr;m, and has a non-wired surface ground, and the circuit component built-in module has a thickness in a range of not less than 80 &mgr;m and not more than 200 &mgr;m. With this configuration, the high-performance and compact-size circuit component built-in module in which circuit components are mounted at a high density is provided so as to be used suitably in various types of electronic information devices.
摘要:
In a module with a built-in semiconductor, higher densification is achieved by disposing inner vias close to a semiconductor device. A module which has a space 107 between a first wiring layer 102a and a built-in semiconductor device 105 is obtained by: mounting the semiconductor device 105 on a first wiring layer 102a of a wiring board 103 without using a sealing resin; stacking on the circuit board an electrically insulating substrate having a through bore (inner via) 104 filled with a conductive paste and an opening for receiving the semiconductor device, and a mold release carrier having a second wiring layer 102b in the stated order; and heating and pressurizing so that the semiconductor device 105 is incorporated in a core layer 101 which is formed by curing the electrically insulating substrate.