公开(公告)号：US20030020114A1

公开(公告)日：2003-01-30

申请号：US09911455

申请日：2001-07-25

Applicant: MOTOROLA, INC.

Inventor： Zhiyi Yu ,  Ravindranath Droopad ,  Kurt W. Eisenbeiser ,  Jeffrey M. Finder

IPC: H01L027/108

CPC classification number: H01L21/02197 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/31691 ,  H01L21/8258 ,  H01L27/0605 ,  H01L49/003

Abstract: High-density metal-insulator transition field effect transistors are grown on an advanced substrate using buried channel or surface channel designs. With respect to the advanced substrate, high quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials.

Abstract translation: 高密度金属 - 绝缘体转换场效应晶体管使用埋入沟道或表面沟道设计在先进的衬底上生长。 对于先进的衬底，通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在单晶衬底例如大硅晶片上。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 此外，顺应性衬底的形成可以包括利用表面活性剂增强的外延，将单晶硅外延生长到单晶氧化物上，以及Zintl相材料的外延生长。

公开(公告)号：US20030020090A1

公开(公告)日：2003-01-30

申请号：US09911491

申请日：2001-07-25

Applicant: MOTOROLA, INC.

Inventor： Joseph P. Heck ,  David E. Bockelman ,  Robert E. Stengel

IPC: H01L029/74

CPC classification number: H01L21/8221 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/8258 ,  H01L27/0605 ,  H01L27/0688 ,  H01L27/15 ,  H01L2924/00011 ,  H01S5/021 ,  H01S5/0261 ,  H01S2301/173 ,  H03F1/18 ,  H01L2224/80001

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. Devices may be formed in the silicon wafer prior to growing the high quality epitaxial layers. Then, to achieve the formation of a compliant substrate, an accommodating buffer layer is grown on silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Compound devices are then formed on the overlying monocrystalline layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. Silicon devices and circuits (e.g., CMOS circuits) in the silicon wafer are wired to the compound devices (e.g., MESFETs, HBTs, HEMTs, PHEMTs, etc.), forming an electrical connection therebetween.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 可以在生长高质量外延层之前在硅晶片中形成器件。 然后，为了形成顺应性衬底，在硅晶片上生长容纳缓冲层。 容纳缓冲层是通过氧化硅的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 然后在覆盖的单晶层上形成复合器件。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 此外，顺应性衬底的形成可以包括利用表面活性剂增强的外延，将单晶硅外延生长到单晶氧化物上，以及Zintl相材料的外延生长。 硅晶片中的硅器件和电路（例如，CMOS电路）被连接到复合器件（例如，MESFET，HBT，HEMT，PHEMT等），在它们之间形成电连接。

公开(公告)号：US20030020082A1

公开(公告)日：2003-01-30

申请号：US09911412

申请日：2001-07-25

Applicant: MOTOROLA, INC.

Inventor： Aroon Tungare

IPC: H01L027/15

CPC classification number: G02B6/29358 ,  G02B6/29389 ,  G02B6/29395 ,  G02F1/0126 ,  G02F2202/103 ,  G02F2202/105 ,  H01L27/15

Abstract: An optical system includes a Fabry-Perot type optical resonator for selectively interrupting optical signals traveling along an optical fiber. The optical resonator is placed between ends of two adjoining optical fibers. The resonator includes a bistable photochromatic material that has a refractive index dependent on the intensity of an incident light beam. A light-emitting component provides the incident light. The light-emitting component is formed over and/or using a high quality epitaxial layer of compound semiconductor material grown over a monocrystalline substrate. A compliant substrate is provided for growing the monocrystalline compound semiconductor layer. The formation of a compliant substrate includes first growing an accommodating buffer layer on the substrate. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide.

Abstract translation: 光学系统包括用于选择性地中断沿着光纤行进的光信号的法布里 - 珀罗型光谐振器。 光谐振器放置在两个邻接的光纤的端部之间。 谐振器包括具有取决于入射光束的强度的折射率的双稳态光色材料。 发光部件提供入射光。 在单晶衬底上生长的化合物半导体材料的高质量外延层上形成和/或使用发光元件。 提供了用于生长单晶化合物半导体层的柔性衬底。 顺应性衬底的形成包括首先在衬底上生长容纳缓冲层。 容纳缓冲层是通过氧化硅的非晶界面层与硅晶片间隔开的单晶氧化物层。

公开(公告)号：US20030020072A1

公开(公告)日：2003-01-30

申请号：US09911518

申请日：2001-07-25

Applicant: MOTOROLA, INC.

Inventor： Robert J. Higgins

IPC: H01L029/22

CPC classification number: H01L27/16 ,  H01L21/02197 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/31691 ,  H01L23/38 ,  H01L2924/0002 ,  Y02P70/605 ,  H01L2924/00

Abstract: A thermal management system or method may include features for pumping heat in a composite semiconductor structure. A heat pump such as a peltier device may be formed from compound semiconductor materials in a composite semiconductor structure. The heat pump may be thermally connected to an area of thermal interest such as a circuit device that generates heat during operation. The heat pump may also be connected to a non-compound semiconductor region of the composite semiconductor structure, which may be die bonded to a heat sink. Electricity may be conducted through the heat pump to move heat in a desired direction between the area of thermal interest and the non-compound semiconductor region. Plural heat pumps may be formed for cooling or heating an area of thermal interest in the composite semiconductor structure. If desired, control circuitry and a temperature sensor may be formed and used to regulate the temperature in the area of the thermal interest.

Abstract translation: 热管理系统或方法可以包括用于在复合半导体结构中泵送热的特征。 诸如珀耳帖器件的热泵可以由复合半导体结构中的化合物半导体材料形成。 热泵可以热连接到热感兴趣的区域，例如在运行期间产生热量的电路装置。 热泵还可以连接到复合半导体结构的非化合物半导体区域，该非化合物半导体区域可以被模具结合到散热器。 可以通过热泵进行电流以在热感兴趣区域和非化合物半导体区域之间的期望方向上移动热量。 可以形成多个热泵以冷却或加热复合半导体结构中的热感兴趣区域。 如果需要，可以形成控制电路和温度传感器并用于调节热感兴趣区域中的温度。

公开(公告)号：US20030020069A1

公开(公告)日：2003-01-30

申请号：US09911459

申请日：2001-07-25

Applicant: MOTOROLA, INC.

Inventor： John E. Holmes ,  Bruce Allen Bosco ,  Rudy M. Emrick ,  Steven James Franson ,  Nestor Javier Escalera ,  Stephen Kent Rockwell

IPC: H01L031/0256 ,  H01L029/47

CPC classification number: H01L21/8258 ,  H01L21/02197 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/31691 ,  H01L21/8221 ,  H01L23/522 ,  H01L23/66 ,  H01L27/0605 ,  H01L27/0688 ,  H01L2223/6627 ,  H01L2924/00011 ,  H01L2924/0002 ,  H01L2924/1903 ,  H01L2924/3011 ,  H01L2924/00 ,  H01L2224/80001

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. A variety of transmission media are disclosed which capitalize on the materials and devices disclosed herein.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 此外，顺应性衬底的形成可以包括利用表面活性剂增强的外延，将单晶硅外延生长到单晶氧化物上，以及Zintl相材料的外延生长。 公开了利用本文公开的材料和装置的各种传输介质。

公开(公告)号：US20030017720A1

公开(公告)日：2003-01-23

申请号：US09908891

申请日：2001-07-20

Applicant: MOTOROLA, INC.

Inventor： Jay A. Curless ,  Lyndee L. Hilt

IPC: H01L021/31 ,  H01L021/469

CPC classification number: C30B25/02 ,  C30B25/18 ,  C30B29/40 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02197 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/31691

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer has lattice registry to both the underlying silicon wafer and the overlying monocrystalline material layer. Formation of a compliant substrate preferably includes utilizing enhanced epitaxy of a surfactant template layer. The surfactant template layer may be formed by depositing an organometallic compound on the accommodating buffer layer using atomic layer epitaxy. In certain preferred embodiments, the organometallic compound is an aluminum-containing compound.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层具有与底层硅晶片和上覆单晶材料层两者的晶格注册。 顺应性底物的形成优选包括利用表面活性剂模板层的增强的外延。 可以通过使用原子层外延在容纳缓冲层上沉积有机金属化合物来形成表面活性剂模板层。 在某些优选实施方案中，有机金属化合物是含铝化合物。

公开(公告)号：US20030017690A1

公开(公告)日：2003-01-23

申请号：US09906784

申请日：2001-07-18

Applicant: MOTOROLA, INC.

Inventor： Marc Chason

IPC: C30B001/00 ,  H01L021/20 ,  H01L021/36 ,  H01L021/3205 ,  H01L021/4763 ,  H01L021/28

CPC classification number: H01L24/82 ,  C30B25/02 ,  C30B25/18 ,  C30B29/40 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/8221 ,  H01L21/8258 ,  H01L23/5389 ,  H01L27/0605 ,  H01L27/0688 ,  H01L2224/24051 ,  H01L2224/24226 ,  H01L2224/24227 ,  H01L2224/76155 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01021 ,  H01L2924/01023 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/01039 ,  H01L2924/0104 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01063 ,  H01L2924/01064 ,  H01L2924/0107 ,  H01L2924/01072 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/10336 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13063 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2224/80001

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. Once the integrated circuit having the above layers is fabricated, it is attached to a circuit board. The integrated circuit has an insulative layer formed on a side edge and electrical signals are passed from the integrated circuit to an input/output pad, through a conductive path and then to another input/output pad that is located on the circuit board.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 此外，顺应性衬底的形成可以包括利用表面活性剂增强的外延，将单晶硅外延生长到单晶氧化物上，以及Zintl相材料的外延生长。 一旦制造了具有上述层的集成电路，则其被附接到电路板。 集成电路具有形成在侧边缘上的绝缘层，并且电信号通过导电路径从集成电路传递到输入/输出焊盘，然后到达位于电路板上的另一个输入/输出焊盘。

公开(公告)号：US20030017640A1

公开(公告)日：2003-01-23

申请号：US09910035

申请日：2001-07-23

Applicant: MOTOROLA, INC.

Inventor： Barbara Foley Barenburg ,  Joyce Yamamoto

IPC: H01S005/00

CPC classification number: G02B6/43 ,  G02B6/12002 ,  G02B6/131 ,  G02B6/4214 ,  G02B6/423 ,  G02B2006/12171 ,  G02B2006/1219 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L31/1035 ,  H01S5/021 ,  H01S5/0261 ,  H01S5/183

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. From the foregoing, an optical interconnect can be formed in accordance with the present invention.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 此外，顺应性衬底的形成可以包括利用表面活性剂增强的外延，将单晶硅外延生长到单晶氧化物上，以及Zintl相材料的外延生长。 根据上述，可以根据本发明形成光学互连。

公开(公告)号：US20030016873A1

公开(公告)日：2003-01-23

申请号：US09909202

申请日：2001-07-19

Applicant: MOTOROLA, INC

Inventor： Jens Nagel ,  Giovanni Seni

IPC: G06K009/62 ,  G06K009/74 ,  G09G005/00

CPC classification number: G06K9/222

Abstract: A handheld device 100 with a graphical user interface for entering handwritten text 102. The handheld device includes word and character input areas 104, 106 within a designated input area 108. Icons 110, 112, 114, 116 and 118 are disposed at the right side of the handwriting user interface 102. A scroll bar 120 may be disposed at the right side of the interface display 102. An entry that begins in the word input area 104 is treated as a handwritten word. A handwritten entry that begins in the character input area 106 is treated as a single character and may be one character in character string. Handwritten character entries are each matched against all potential characters.

Abstract translation: 具有用于输入手写文本102的图形用户界面的手持设备100.手持设备包括在指定输入区域108内的字和输入区域104,106。图标110,112,114,116和118设置在右侧 滚动条120可以设置在界面显示器102的右侧。从字输入区域104开始的条目被视为手写字。 在字符输入区域106中开始的手写条目被视为单个字符，并且可以是字符串中的一个字符。 手写字符条目都与所有潜在字符匹配。

公开(公告)号：US20030016567A1

公开(公告)日：2003-01-23

申请号：US09909905

申请日：2001-07-23

Applicant: MOTOROLA, INC.

Inventor： Peter J. Wilson ,  Mihir A. Pandya

IPC: H01L029/04

CPC classification number: G11C7/1006 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/8258 ,  H01L27/0605 ,  H01S5/026 ,  H01S5/0261 ,  H01S5/183 ,  H01S5/423 ,  H01S2301/176

Abstract: An apparatus includes a memory system having multiple memory subsystems that are operable to concurrently service memory transactions. The memory system has an interface arrangement with an interconnection network that allows for independent access to each memory subsystem, and logic blocks that support the servicing and distribution or routing of memory transactions. Preferably, the apparatus is formed on a semiconductor structure having a combination of compound semiconductor material and Group IV semiconductor material.

Abstract translation: 一种装置包括具有可操作以同时服务存储器事务的多个存储器子系统的存储器系统。 存储器系统具有与互连网络的接口布置，其允许对每个存储器子系统的独立访问，以及支持存储器事务的服务和分发或路由的逻辑块。 优选地，该装置形成在具有化合物半导体材料和IV族半导体材料的组合的半导体结构上。