DATA-BUFFER CONTROLLER/CONTROL-SIGNAL REDRIVER

    公开(公告)号:US20230298642A1

    公开(公告)日:2023-09-21

    申请号:US18021442

    申请日:2021-08-24

    Applicant: Rambus Inc.

    CPC classification number: G11C7/1084 G11C7/1057 G11C7/222

    Abstract: In a memory system having multiple memory sockets for removable insertion of memory modules therein, off-module data buffers are disposed in a data signaling data path between a memory control component and the memory sockets, and an off-module buffer controller is disposed in a control signaling path between the memory control component and the memory sockets. The off-module buffer controller receives control signals transmitted by the memory control component and re-drives/re-transmits the control signals to the memory sockets. The off-module buffer controller generates buffer-control signals in response to the control signals and outputs the buffer-control signals to the off-module data buffers to multiplex host-control-component access to the memory sockets.

    ENERGY EFFICIENT STORAGE OF ERROR-CORRECTION-DETECTION INFORMATION

    公开(公告)号:US20230297474A1

    公开(公告)日:2023-09-21

    申请号:US18130810

    申请日:2023-04-04

    Applicant: Rambus Inc.

    Abstract: Data and error correction information may involve accessing multiple data channels (e.g., 8) and one error detection and correction channel concurrently. This technique requires a total of N+1 row requests for each access, where N is the number of data channels (e.g., 8 data row accesses and 1 error detection and correction row access equals 9 row accesses.) A single (or at least less than N) data channel row may be accessed concurrently with a single error detection and correction row. This reduces the number of row requests to two (2)—one for the data and one for the error detection and correction information. Because, row requests consume power, reducing the number of row requests is more power efficient.

    Quad-channel DRAM
    97.
    发明授权

    公开(公告)号:US11762787B2

    公开(公告)日:2023-09-19

    申请号:US17433071

    申请日:2020-02-18

    Applicant: Rambus Inc.

    CPC classification number: G06F13/1668

    Abstract: A DRAM includes at least four groups of memory cores and at least four memory access channel interfaces that, in a first mode, each respectively are to receive memory access commands, directed to a corresponding one of the groups of memory cores. One-half of the memory access channel interfaces are to, in a second mode, each respectively receive memory access commands, directed to a corresponding two of four of the groups of memory cores. The memory access channel interfaces to have electrical connection conductors that lie on opposing sides of at least one line of reflectional symmetry from a second one-half of the one-half of the at least four memory access channel interfaces.

    EDGE BASED PARTIAL RESPONSE EQUALIZATION
    98.
    发明公开

    公开(公告)号:US20230291617A1

    公开(公告)日:2023-09-14

    申请号:US17965676

    申请日:2022-10-13

    Applicant: Rambus Inc.

    Abstract: A method is disclosed. The method includes sampling a data signal having a voltage value at an expected edge time of the data signal. A first alpha value is generated, and a second alpha value generated in dependence upon the voltage value. The data signal is adjusted by the first alpha value to derive a first adjusted signal. The data signal is adjusted by the second alpha value to derive a second adjusted signal. The first adjusted signal is sampled to output a first data value while the second adjusted signal is sampled to output a second data value. A selection is made between the first data value and the second data value as a function of a prior received data value to determine a received data value.

    Flash memory device having a calibration mode

    公开(公告)号:US11734208B2

    公开(公告)日:2023-08-22

    申请号:US18082446

    申请日:2022-12-15

    Applicant: Rambus Inc.

    CPC classification number: G06F13/1668 Y02D10/00

    Abstract: A method of operation of a flash integrated circuit (IC) memory device is described. The flash IC memory device has an array of memory cells and an interface to receive control, address and data signals using an internal reference voltage. The method includes, at boot-up, initializing the internal reference voltage to a default voltage. At boot-up, the interface is operable to receive, using the internal reference voltage, signals having a first voltage swing at a first signaling frequency. The method includes receiving a first command that specifies calibration of the interface during a calibration mode. The calibration mode is used to calibrate the interface to operate at a second signaling frequency and receive signals having a second voltage swing. The second voltage swing is smaller than the first voltage swing and the second signaling frequency is higher than the first signaling frequency.

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