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    Reverse conducting insulated gate bipolar transistor
    103.
    发明授权
    Reverse conducting insulated gate bipolar transistor 有权
    反向导通绝缘栅双极晶体管

    公开(公告)号：US09018674B2

    公开(公告)日：2015-04-28

    申请号：US13441364

    申请日：2012-04-06

    申请人： Dorothea Werber ,  Anton Mauder ,  Frank Pfirsch ,  Hans-Joachim Schulze ,  Franz Hirler ,  Alexander Philippou

    发明人： Dorothea Werber ,  Anton Mauder ,  Frank Pfirsch ,  Hans-Joachim Schulze ,  Franz Hirler ,  Alexander Philippou

    IPC分类号： H01L29/739 ,  H01L29/06 ,  H01L29/08

    CPC分类号： H01L29/7396 ,  H01L29/0696 ,  H01L29/0834

    摘要： A semiconductor includes a drift zone of a first conductivity type arranged between a first side and a second side of a semiconductor body. The semiconductor device further includes a first region of the first conductivity type and a second region of a second conductivity type subsequently arranged along a first direction parallel to the second side. The semiconductor device further includes an electrode at the second side adjoining the first and second regions. The semiconductor device further includes a third region of the second conductivity type arranged between the drift zone and the first region. The third region is spaced apart from the second region and from the second side.

    摘要翻译： 半导体包括布置在半导体主体的第一侧和第二侧之间的第一导电类型的漂移区。 半导体器件还包括第一导电类型的第一区域和沿着平行于第二侧面的第一方向布置的第二导电类型的第二区域。 半导体器件还包括邻近第一和第二区域的第二侧的电极。 半导体器件还包括布置在漂移区和第一区之间的第二导电类型的第三区。 第三区域与第二区域和第二区域隔开。

    Power semiconductor diode, IGBT, and method for manufacturing thereof
    105.
    发明授权
    Power semiconductor diode, IGBT, and method for manufacturing thereof 有权
    功率半导体二极管，IGBT及其制造方法

    公开(公告)号：US08809902B2

    公开(公告)日：2014-08-19

    申请号：US13274411

    申请日：2011-10-17

    申请人： Holger Huesken ,  Anton Mauder ,  Hans-Joachim Schulze ,  Wolfgang Roesner

    发明人： Holger Huesken ,  Anton Mauder ,  Hans-Joachim Schulze ,  Wolfgang Roesner

    IPC分类号： H01L29/739

    CPC分类号： H01L29/0688 ,  H01L29/0619 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/08 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/2003 ,  H01L29/22 ,  H01L29/36 ,  H01L29/66128 ,  H01L29/66143 ,  H01L29/66325 ,  H01L29/7393 ,  H01L29/7395 ,  H01L29/861 ,  H01L29/8611 ,  H01L29/872

    摘要： A power semiconductor diode is provided. The power semiconductor diode includes a semiconductor substrate having a first emitter region of a first conductivity type, a second emitter region of a second conductivity type, and a drift region of the first conductivity type arranged between the first emitter region and the second emitter region. The drift region forms a pn-junction with the second emitter region. A first emitter metallization is in contact with the first emitter region. The first emitter region includes a first doping region of the first conductivity type and a second doping region of the first conductivity type. The first doping region forms an ohmic contact with the first emitter metallization, and the second doping region forms a non-ohmic contact with the first emitter metallization. A second emitter metallization is in contact with the second emitter region.

    摘要翻译： 提供功率半导体二极管。 功率半导体二极管包括具有第一导电类型的第一发射极区域，第二导电类型的第二发射极区域和布置在第一发射极区域和第二发射极区域之间的第一导电类型的漂移区域的半导体衬底。 漂移区域与第二发射极区域形成pn结。 第一发射极金属化与第一发射极区域接触。 第一发射极区域包括第一导电类型的第一掺杂区域和第一导电类型的第二掺杂区域。 第一掺杂区与第一发射极金属化形成欧姆接触，第二掺杂区与第一发射极金属化形成非欧姆接触。 第二发射极金属化与第二发射极区域接触。

    Semiconductor device and fabrication method
    107.
    发明授权
    Semiconductor device and fabrication method 有权
    半导体器件及其制造方法

    公开(公告)号：US08367532B2

    公开(公告)日：2013-02-05

    申请号：US13558467

    申请日：2012-07-26

    申请人： Anton Mauder ,  Hans-Joachim Schulze ,  Frank Hille ,  Holger Schulze ,  Manfred Pfaffenlehner ,  Carsten Schäffer ,  Franz-Josef Niedernostheide

    发明人： Anton Mauder ,  Hans-Joachim Schulze ,  Frank Hille ,  Holger Schulze ,  Manfred Pfaffenlehner ,  Carsten Schäffer ,  Franz-Josef Niedernostheide

    IPC分类号： H01L21/265

    CPC分类号： H01L29/861 ,  H01L21/263 ,  H01L21/265 ,  H01L29/36 ,  H01L29/66136 ,  H01L29/66333 ,  H01L29/7395

    摘要： A semiconductor device in one embodiment has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region.

    摘要翻译： 一个实施例中的半导体器件具有布置在第一和第二连接区域之间的第一连接区域，第二连接区域和半导体体积。 在第二连接区域的附近，在半导体体积中形成空间电荷区域的场停止区域以及与第一连接区域相邻的阳极区域在半导体体积内设置。 半导体体积内的掺杂剂浓度分布被配置为使得从第二连接区域的面对第二连接区域的阳极区域的界面开始，离子化掺杂剂在半导体体积上的电荷积分到达第二连接区域的方向 与半导体器件的击穿电荷相对应的电荷量仅在靠近第二连接区域的场停止区的界面附近。

    SEMICONDUCTOR DEVICE WITH A DYNAMIC GATE-DRAIN CAPACITANCE
    108.
    发明申请
    SEMICONDUCTOR DEVICE WITH A DYNAMIC GATE-DRAIN CAPACITANCE 有权
    具有动态栅极导通电容的半导体器件

    公开(公告)号：US20130009227A1

    公开(公告)日：2013-01-10

    申请号：US13614479

    申请日：2012-09-13

    申请人： Anton Mauder ,  Hans-Joachim Schulze ,  Carolin Tolksdorf ,  Winfried Kaindl ,  Armin Willmeroth

    发明人： Anton Mauder ,  Hans-Joachim Schulze ,  Carolin Tolksdorf ,  Winfried Kaindl ,  Armin Willmeroth

    IPC分类号： H01L27/07 ,  H01L21/8234

    CPC分类号： H01L27/0808 ,  H01L21/26513 ,  H01L27/0811 ,  H01L27/088 ,  H01L29/7836

    摘要： A semiconductor device with a dynamic gate drain capacitance. One embodiment provides a semiconductor device. The device includes a semiconductor substrate, a field effect transistor structure including a source region, a first body region, a drain region, a gate electrode structure and a gate insulating layer. The gate insulating layer is arranged between the gate electrode structure and the body region. The gate electrode structure and the drain region partially form a capacitor structure including a gate-drain capacitance configured to dynamically change with varying reverse voltages applied between the source and drain regions. The gate-drain capacitance includes at least one local maximum at a given threshold or a plateau-like course at given reverse voltage.

    摘要翻译： 具有动态栅极漏极电容的半导体器件。 一个实施例提供一种半导体器件。 该器件包括半导体衬底，场效应晶体管结构，其包括源区，第一体区，漏区，栅电极结构和栅极绝缘层。 栅极绝缘层设置在栅电极结构和体区之间。 栅极电极结构和漏极区域部分地形成电容器结构，其包括栅极 - 漏极电容，该栅极 - 漏极电容被配置为随着施加在源极和漏极区域之间的变化的反向电压而动态地 栅极 - 漏极电容在给定的阈值下包括至少一个局部最大值，或者在给定的反向电压下包括平台状过程。

    SEMICONDUCTOR DEVICE AND FABRICATION METHOD
    110.
    发明申请
    SEMICONDUCTOR DEVICE AND FABRICATION METHOD 有权
    半导体器件和制造方法

    公开(公告)号：US20110275202A1

    公开(公告)日：2011-11-10

    申请号：US13186470

    申请日：2011-07-20

    申请人： Anton MAUDER ,  Hans-Joachim Schulze ,  Frank Hille ,  Holger Schulze ,  Manfred Pfaffenlehner ,  Carsten Schäffer ,  Franz-Josef Niedernostheide

    发明人： Anton MAUDER ,  Hans-Joachim Schulze ,  Frank Hille ,  Holger Schulze ,  Manfred Pfaffenlehner ,  Carsten Schäffer ,  Franz-Josef Niedernostheide

    IPC分类号： H01L21/425

    CPC分类号： H01L29/861 ,  H01L21/263 ,  H01L21/265 ,  H01L29/36 ,  H01L29/66136 ,  H01L29/66333 ,  H01L29/7395

    摘要： A semiconductor device in one embodiment has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region.

    摘要翻译： 一个实施例中的半导体器件具有布置在第一和第二连接区域之间的第一连接区域，第二连接区域和半导体体积。 在第二连接区域的附近，在半导体体积中形成空间电荷区域的场停止区域以及与第一连接区域相邻的阳极区域在半导体体积内设置。 半导体体积内的掺杂剂浓度分布被配置为使得从第二连接区域的面对第二连接区域的阳极区域的界面开始，离子化掺杂剂在半导体体积上的电荷积分到达第二连接区域的方向 与半导体器件的击穿电荷相对应的电荷量仅在靠近第二连接区域的场停止区的界面附近。