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    COOLING MECHANISM FOR STACKED DIE PACKAGE AND METHOD OF MANUFACTURING THE SAME
    102.
    发明申请
    COOLING MECHANISM FOR STACKED DIE PACKAGE AND METHOD OF MANUFACTURING THE SAME 审中-公开
    堆叠式包装的冷却机构及其制造方法

    公开(公告)号：US20120061059A1

    公开(公告)日：2012-03-15

    申请号：US13033840

    申请日：2011-02-24

    申请人： Yi-Li HSIAO ,  Chen-Hua Yu ,  Da-Yuan Shih ,  Chih-Hang Tung ,  Chun Hui Yu

    发明人： Yi-Li HSIAO ,  Chen-Hua Yu ,  Da-Yuan Shih ,  Chih-Hang Tung ,  Chun Hui Yu

    IPC分类号： F28D15/00

    CPC分类号： F28D15/02 ,  H01L23/34 ,  H01L23/473 ,  H01L25/0657 ,  H01L25/16 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06589 ,  H01L2924/00014 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2924/00 ,  H01L2224/0401

    摘要： An apparatus for cooling a stacked die package comprises a first die provided above a substrate; a second die above the first die; a cooling fluid in fluid communication with the first die and the second die, the cooling fluid for absorbing thermal energy from the first and the second die; a housing containing the first and second dies, the housing sealing the first and second dies from an environment, wherein the housing further includes a first opening and a second opening, the first and second openings being vertically displaced from one another; a conduit having one end connected to the first opening and the other end connected to the second opening, the conduit allowing the cooling liquid to circulate from the first opening to the second opening; a first temperature sensor being arranged to provide an output that is dependent on a local temperature at the first opening; and a second temperature sensor being arranged to provide an output that is dependent on a local temperature at the second opening, wherein the outputs of the first and second temperature sensors relative to each other are indicative of a level of the cooling fluid.

    摘要翻译： 一种用于冷却堆叠的管芯封装的设备，包括设置在衬底上的第一管芯; 第一个模具上方的第二个模具; 与第一模具和第二模具流体连通的冷却流体，用于从第一模具和第二模具吸收热能的冷却流体; 壳体，其包含第一和第二模具，所述壳体将环境中的第一和第二模具密封，其中所述壳体还包括第一开口和第二开口，所述第一和第二开口彼此垂直移位; 导管，其一端连接到第一开口，另一端连接到第二开口，导管允许冷却液从第一开口循环到第二开口; 第一温度传感器被布置成提供依赖于第一开口处的局部温度的输出; 并且第二温度传感器被布置成提供取决于第二开口处的局部温度的输出，其中第一和第二温度传感器相对于彼此的输出指示冷却流体的水平。

    Method of fabricating semiconductor device isolation structure
    104.
    发明授权
    Method of fabricating semiconductor device isolation structure 有权
    制造半导体器件隔离结构的方法

    公开(公告)号：US08110890B2

    公开(公告)日：2012-02-07

    申请号：US11758043

    申请日：2007-06-05

    申请人： Chen-Hua Yu ,  Chen-Nan Yeh ,  Chu-Yun Fu ,  Ding-Yuan Chen

    发明人： Chen-Hua Yu ,  Chen-Nan Yeh ,  Chu-Yun Fu ,  Ding-Yuan Chen

    IPC分类号： H01L21/70

    CPC分类号： H01L21/76202 ,  H01L21/26506 ,  H01L21/26533 ,  H01L21/26586 ,  H01L21/266 ,  H01L21/324 ,  H01L21/762 ,  H01L21/823481 ,  H01L29/0649 ,  H01L29/6659 ,  H01L29/7833

    摘要： A semiconductor device including reentrant isolation structures and a method for making such a device. A preferred embodiment comprises a substrate of semiconductor material forming at least one isolation structure having a reentrant profile and isolating one or more adjacent operational components. The reentrant profile of the at least one isolation structure is formed of substrate material and is created by ion implantation, preferably using oxygen ions applied at a number of different angles and energy levels. In another embodiment the present invention is a method of forming an isolation structure for a semiconductor device performing at least one oxygen ion implantation.

    摘要翻译： 包括可折入隔离结构的半导体器件和用于制造这种器件的方法。 优选实施例包括形成至少一个隔离结构的半导体材料的衬底，该隔离结构具有折返轮廓并且隔离一个或多个相邻的操作部件。 至少一个隔离结构的折返轮廓由衬底材料形成，并且通过离子注入产生，优选地使用以多个不同角度和能级施加的氧离子。 在另一个实施方案中，本发明是形成用于进行至少一个氧离子注入的半导体器件的隔离结构的方法。

    Germanium FinFETs Having Dielectric Punch-Through Stoppers
    105.
    发明申请
    Germanium FinFETs Having Dielectric Punch-Through Stoppers 有权
    具有介质穿孔塞的锗FinFET

    公开(公告)号：US20120025313A1

    公开(公告)日：2012-02-02

    申请号：US13272994

    申请日：2011-10-13

    申请人： Cheng-Hung Chang ,  Yu-Rung Hsu ,  Chen-Yi Lee ,  Shih-Ting Hung ,  Chen-Nan Yeh ,  Chen-Hua Yu

    发明人： Cheng-Hung Chang ,  Yu-Rung Hsu ,  Chen-Yi Lee ,  Shih-Ting Hung ,  Chen-Nan Yeh ,  Chen-Hua Yu

    IPC分类号： H01L27/12 ,  H01L29/02

    CPC分类号： H01L29/66795 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02617 ,  H01L29/1054 ,  H01L29/7851

    摘要： A method of forming a semiconductor structure includes providing a composite substrate, which includes a bulk silicon substrate and a silicon germanium (SiGe) layer over and adjoining the bulk silicon substrate. A first condensation is performed to the SiGe layer to form a condensed SiGe layer, so that the condensed SiGe layer has a substantially uniform germanium concentration. The condensed SiGe layer and a top portion of the bulk silicon substrate are etched to form a composite fin including a silicon fin and a condensed SiGe fin over the silicon fin. The method further includes oxidizing a portion of the silicon fin; and performing a second condensation to the condensed SiGe fin.

    摘要翻译： 形成半导体结构的方法包括提供复合衬底，该复合衬底包括在本体硅衬底上并邻接体硅衬底的体硅衬底和硅锗（SiGe）层。 对SiGe层进行第一次冷凝以形成冷凝的SiGe层，使得冷凝的SiGe层具有基本均匀的锗浓度。 蚀刻冷凝的SiGe层和体硅衬底的顶部以在硅片上形成包括硅翅片和冷凝的SiGe鳍的复合翅片。 该方法还包括氧化硅片的一部分; 并对冷凝的SiGe翅片进行第二冷凝。

    Low resistance high reliability contact via and metal line structure for semiconductor device
    106.
    发明授权
    Low resistance high reliability contact via and metal line structure for semiconductor device 有权
    低电阻高可靠性接触通孔和半导体器件的金属线结构

    公开(公告)号：US08106512B2

    公开(公告)日：2012-01-31

    申请号：US12845852

    申请日：2010-07-29

    申请人： Hsiang-Huan Lee ,  Ming Han Lee ,  Ming-Shih Yeh ,  Chen-Hua Yu ,  Shau-Lin Shue

    发明人： Hsiang-Huan Lee ,  Ming Han Lee ,  Ming-Shih Yeh ,  Chen-Hua Yu ,  Shau-Lin Shue

    IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

    CPC分类号： H01L23/53238 ,  H01L21/28562 ,  H01L21/76846 ,  H01L21/76867 ,  H01L21/76873 ,  H01L21/76883 ,  H01L23/485 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The structures and methods described above provide mechanisms to improve interconnect reliability and resistivity. The interconnect reliability and resistivity are improved by using a composite barrier layer, which provides good step coverage, good copper diffusion barrier, and good adhesion with adjacent layers. The composite barrier layer includes an ALD barrier layer to provide good step coverage. The composite barrier layer also includes a barrier-adhesion-enhancing film, which contains at least an element or compound that contains Mn, Cr, V, Ti, or Nb to improve adhesion. The composite barrier layer may also include a Ta or Ti layer between the ALD barrier layer and the barrier-adhesion-enhancing layer.

    摘要翻译： 上述结构和方法提供了提高互连可靠性和电阻率的机制。 通过使用复合阻挡层来提高互连的可靠性和电阻率，该复合阻挡层提供良好的台阶覆盖率，良好的铜扩散阻挡层和与相邻层的良好粘附性。 复合阻挡层包括ALD阻挡层以提供良好的阶梯覆盖。 复合阻挡层还包括至少包含含有Mn，Cr，V，Ti或Nb的元素或化合物以提高粘合性的阻隔增粘膜。 复合阻挡层还可以包括在ALD阻挡层和阻挡增粘层之间的Ta或Ti层。

    III-Nitride Based Semiconductor Structure with Multiple Conductive Tunneling Layer
    108.
    发明申请
    III-Nitride Based Semiconductor Structure with Multiple Conductive Tunneling Layer 有权
    基于III型氮化物的多导体隧穿层半导体结构

    公开(公告)号：US20120007048A1

    公开(公告)日：2012-01-12

    申请号：US13237181

    申请日：2011-09-20

    申请人： Chia-Lin Yu ,  Ding-Yuan Chen ,  Chen-Hua Yu ,  Wen-Chih Chiou

    发明人： Chia-Lin Yu ,  Ding-Yuan Chen ,  Chen-Hua Yu ,  Wen-Chih Chiou

    IPC分类号： H01L29/12 ,  H01L21/20

    CPC分类号： H01L33/04 ,  H01L33/12 ,  H01L33/32

    摘要： A semiconductor structure includes a substrate and a conductive carrier-tunneling layer over and contacting the substrate. The conductive carrier-tunneling layer includes first group-III nitride (III-nitride) layers having a first bandgap, wherein the first III-nitride layers have a thickness less than about 5 nm; and second III-nitride layers having a second bandgap lower than the first bandgap, wherein the first III-nitride layers and the second III-nitride layers are stacked in an alternating pattern. The semiconductor structure is free from a III-nitride layer between the substrate and the conductive carrier-tunneling layer. The semiconductor structure further includes an active layer over the conductive carrier-tunneling layer.

    摘要翻译： 半导体结构包括衬底和与衬底接触的导电载体隧穿层。 导电载体隧穿层包括具有第一带隙的第一III族氮化物（III族氮化物）层，其中第一III族氮化物层具有小于约5nm的厚度; 和具有比第一带隙低的第二带隙的第二III族氮化物层，其中第一III族氮化物层和第二III族氮化物层以交替图案堆叠。 半导体结构在衬底和导电载体 - 隧穿层之间不含III族氮化物层。 半导体结构还包括在导电载体 - 隧穿层上的有源层。