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214 条记录 (耗时 0.034 秒)

    NON VOLATILE MEMORY CELLS INCLUDING A FILAMENT GROWTH LAYER AND METHODS OF FORMING THE SAME
    103.
    发明申请
    NON VOLATILE MEMORY CELLS INCLUDING A FILAMENT GROWTH LAYER AND METHODS OF FORMING THE SAME 审中-公开

    公开(公告)号：US20100123117A1

    公开(公告)日：2010-05-20

    申请号：US12273691

    申请日：2008-11-19

    申请人： Ming Sun ,  Xilin Peng ,  Haiwen Xi ,  Michael Xuefei Tang

    发明人： Ming Sun ,  Xilin Peng ,  Haiwen Xi ,  Michael Xuefei Tang

    IPC分类号： H01L45/00

    CPC分类号： H01L45/085 ,  H01L27/2472 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/142 ,  H01L45/143 ,  H01L45/146 ,  H01L45/147 ,  H01L45/16

    摘要： A non volatile memory cell that includes a first electrode; a variable resistive layer disposed on the first electrode; a filament growth layer disposed on the variable resistive layer, the filament growth layer including dielectric material and metal atoms; and a second electrode. In other embodiments, a memory array is disclosed that includes a plurality of non volatile memory cells, each non volatile memory cell including a first electrode; a variable resistive layer disposed on the first electrode; a filament growth layer disposed on the variable resistive layer, the filament growth layer including clusters of a first electrically conductive atomic component interspersed in an oxidized second atomic component; and a second electrode; at least one word line; and at least one bit line, wherein the word line is orthogonal to the bit line and each of the plurality of non volatile memory cells are operatively coupled to a word line and a bit line. In still other embodiments, methods are disclosed that include forming a non volatile memory cell include forming a first electrode; forming a variable resistive layer on the first electrode; depositing a two phase alloy layer on the variable resistive layer; converting the two phase alloy layer to a filament growth layer; and depositing a second electrode on the filament growth layer, thereby forming a non volatile memory cell.

    Non-Volatile Memory Cell with Programmable Unipolar Switching Element
    104.
    发明申请
    Non-Volatile Memory Cell with Programmable Unipolar Switching Element 有权
    具有可编程单极性开关元件的非易失性存储单元

    公开(公告)号：US20100110765A1

    公开(公告)日：2010-05-06

    申请号：US12497964

    申请日：2009-07-06

    申请人： Wei Tian ,  Nurul Amin ,  Insik Jin ,  Ming Sun ,  Venu Vaithyanathan ,  YoungPil Kim ,  Chulmin Jung

    发明人： Wei Tian ,  Nurul Amin ,  Insik Jin ,  Ming Sun ,  Venu Vaithyanathan ,  YoungPil Kim ,  Chulmin Jung

    IPC分类号： G11C11/14 ,  G11C11/00 ,  G11C11/40

    CPC分类号： G11C13/003 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/0011 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/0073 ,  G11C2213/15 ,  G11C2213/31 ,  G11C2213/32 ,  G11C2213/56 ,  G11C2213/76

    摘要： A non-volatile memory cell with a programmable unipolar switching element, and a method of programming the memory element are disclosed. In some embodiments, the memory cell comprises a programmable bipolar resistive sense memory element connected in series with a programmable unipolar resistive sense switching element. The memory element is programmed to a selected resistance state by application of a selected write current in a selected direction through the cell, wherein a first resistance level is programmed by passage of a write current in a first direction and wherein a second resistance level is programmed by passage of a write current in an opposing second direction. The switching element is programmed to a selected resistance level to facilitate access to the selected resistance state of the memory element.

    摘要翻译： 公开了一种具有可编程单极开关元件的非易失性存储单元，以及编程存储器元件的方法。 在一些实施例中，存储单元包括与可编程单极性电阻感测开关元件串联连接的可编程双极性电阻读出存储元件。 通过在所选择的方向上通过单元施加选择的写入电流将存储元件编程为所选择的电阻状态，其中通过沿第一方向的写入电流来编程第一电阻电平，并且其中第二电阻电平被编程 通过在相反的第二方向上的写入电流。 开关元件被编程为所选择的电阻水平以便于访问存储元件的所选择的电阻状态。

    Snap-In Bearing Insert
    109.
    发明申请
    Snap-In Bearing Insert 有权
    卡入式轴承插件

    公开(公告)号：US20080247693A1

    公开(公告)日：2008-10-09

    申请号：US11696601

    申请日：2007-04-04

    申请人： Jonathan R. Schroeder ,  Ming Sun

    发明人： Jonathan R. Schroeder ,  Ming Sun

    IPC分类号： F16C33/02

    CPC分类号： F16C33/08 ,  F16C33/107 ,  F16C33/201 ,  F16C2300/02 ,  Y10T29/49636

    摘要： An improved sliding bearing apparatus and method utilize a snap-in polymer bearing insert having one or more identically shaped locking lugs, each of which are configured for locking engagement with a corresponding depression in a bearing housing, to thereby lock the bearing insert in place against relative movement either radially or axially with respect to the bearing housing. In a free-standing state, the insert may have a variety of shapes including cylindrical, non-cylindrical, or be flat and planar. An insert for a closed bearing is configured such that it may be trimmed to form an insert for an open bearing.

    摘要翻译： 改进的滑动轴承装置和方法利用具有一个或多个相同形状的锁定凸耳的卡入式聚合物支承插入件，每个锁定凸耳被构造成与轴承壳体中的相应凹部锁定接合，从而将轴承插入件锁定在适当的位置，以抵抗 相对于轴承座径向或轴向相对运动。 在独立状态下，插入件可以具有各种形状，包括圆柱形，非圆柱形或扁平和平面。 用于封闭轴承的插入件构造成使得其可以被修整以形成用于开放轴承的插入件。