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    Semiconductor laser diode on tiled gallium containing material
    101.
    发明授权
    Semiconductor laser diode on tiled gallium containing material 有权

    公开(公告)号：US09762032B1

    公开(公告)日：2017-09-12

    申请号：US15218690

    申请日：2016-07-25

    Applicant: Soraa Laser Diode, Inc.

    Inventor： Melvin McLaurin ,  Alexander Sztein ,  Po Shan Hsu ,  James W. Raring

    IPC: H01L29/20 ,  H01L21/20 ,  H01S5/343 ,  H01S5/32 ,  H01S5/042 ,  H01S5/028 ,  H01S5/02

    CPC classification number: H01S5/34333 ,  H01L24/29 ,  H01L29/2003 ,  H01L33/16 ,  H01L33/50 ,  H01S5/00 ,  H01S5/0202 ,  H01S5/0206 ,  H01S5/0215 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/028 ,  H01S5/0282 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2201 ,  H01S5/3202

    Abstract: In an example, the present invention provides a gallium and nitrogen containing multilayered structure, and related method. The structure has a plurality of gallium and nitrogen containing semiconductor substrates, each of the gallium and nitrogen containing semiconductor substrates (“substrates”) having a plurality of epitaxially grown layers overlaying a top-side of each of the substrates. The structure has an orientation of a reference crystal direction for each of the substrates. The structure has a first handle substrate coupled to each of the substrates such that each of the substrates is aligned to a spatial region configured in a selected direction of the first handle substrate, which has a larger spatial region than a sum of a total backside region of plurality of the substrates to be arranged in a tiled configuration overlying the first handle substrate. The reference crystal direction for each of the substrates is parallel to the spatial region in the selected direction within 10 degrees or less. The structure has a first bonding medium provided between the first handle substrate and each of the substrate while maintaining the alignment between reference crystal orientation and the selected direction of the first handle substrate; and a processed region formed overlying each of the substrates configured concurrently while being bonded to the first handle substrate. Depending upon the embodiment, the processed region can include any combination of the aforementioned processing steps and/or steps.

    Gallium nitride containing laser device configured on a patterned substrate
    106.
    发明授权
    Gallium nitride containing laser device configured on a patterned substrate 有权
    配置在图案化基板上的含氮化镓激光器件

    公开(公告)号：US09166372B1

    公开(公告)日：2015-10-20

    申请号：US14317846

    申请日：2014-06-27

    Applicant: Soraa Laser Diode, Inc.

    Inventor： Melvin McLaurin ,  James W. Raring ,  Christiane Elsass ,  Thiago P. Melo ,  Mathew C. Schmidt

    IPC: H01S5/02 ,  H01S5/22 ,  H01S5/343 ,  H01S5/227 ,  H01L21/02 ,  H01S5/32

    CPC classification number: H01S5/34333 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01S5/0425 ,  H01S5/1082 ,  H01S5/2201 ,  H01S5/2275 ,  H01S5/3063 ,  H01S5/3202 ,  H01S2301/173 ,  H01S2304/12

    Abstract: A gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region. The surface region is configured on either a non-polar crystal orientation or a semi-polar crystal orientation. The device has a recessed region formed within a second region of the substrate material, the second region being between a first region and a third region. The recessed region is configured to block a plurality of defects from migrating from the first region to the third region. The device has an epitaxially formed gallium and nitrogen containing region formed overlying the third region. The epitaxially formed gallium and nitrogen containing region is substantially free from defects migrating from the first region and an active region formed overlying the third region.

    Abstract translation: 含镓和氮的激光二极管器件。 该器件具有包含表面区域的含镓和氮的衬底材料。 表面区域配置在非极性晶体取向或半极性晶体取向上。 该器件具有形成在衬底材料的第二区域内的凹陷区域，第二区域位于第一区域和第三区域之间。 凹陷区域被配置为阻挡多个缺陷从第一区域迁移到第三区域。 该器件具有形成在第三区域上的外延形成的含镓和氮的区域。 外延形成的含镓和氮的区域基本上没有从第一区域迁移的缺陷和形成在第三区域上的有源区域。

    MANUFACTURABLE LASER DIODE
    107.
    发明申请
    MANUFACTURABLE LASER DIODE 有权
    可制造激光二极管

    公开(公告)号：US20150229107A1

    公开(公告)日：2015-08-13

    申请号：US14312427

    申请日：2014-06-23

    Applicant: Soraa Laser Diode, Inc.

    Inventor： Melvin McLaurin ,  Alexander Sztein ,  Po Shan Hsu ,  Eric Goutain ,  Dan Steigerwald ,  James W. Raring

    IPC: H01S5/40 ,  H01S5/30 ,  H01S5/02

    CPC classification number: H01S5/4093 ,  H01L24/83 ,  H01L24/95 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2924/16152 ,  H01S5/0203 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/22 ,  H01S5/3013 ,  H01S5/32325 ,  H01S5/32341 ,  H01L2924/00014 ,  H01L2924/00

    Abstract: A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.

    Abstract translation: 一种制造激光二极管器件的方法包括提供具有表面区域并形成覆盖在该表面区域上的外延材料的衬底，所述外延材料包括n型覆层区域，所述有源区域包括至少一个覆盖在n型上的有源层 包层区域和覆盖有源层区域的p型覆层区域。 外延材料被图案化以形成多个骰子，每个骰子对应于至少一个激光装置，其特征在于一对骰子之间的第一间距，第一间距小于设计宽度。 将多个骰子中的每一个转移到载体晶片，使得每对骰子在每对骰子之间配置有第二间距，第二间距大于第一间距。

    SPECIALIZED MOBILE LIGHT DEVICE CONFIGURED WITH A GALLIUM AND NITROGEN CONTAINING LASER SOURCE
    110.
    发明申请
    SPECIALIZED MOBILE LIGHT DEVICE CONFIGURED WITH A GALLIUM AND NITROGEN CONTAINING LASER SOURCE 有权

    公开(公告)号：US20210194206A1

    公开(公告)日：2021-06-24

    申请号：US16725410

    申请日：2019-12-23

    Applicant: Soraa Laser Diode, Inc.

    Inventor： James W. Raring ,  Paul Rudy

    IPC: H01S5/022 ,  F21V9/32 ,  H01S5/042 ,  H01S5/323 ,  H01S5/22 ,  H01S5/024 ,  H01S5/34 ,  H01S5/00 ,  G01S7/481 ,  G01S17/10 ,  G02B27/09 ,  H04B10/116 ,  H04B10/50 ,  H04B10/40

    Abstract: A portable lighting apparatus is provided with a gallium-and-nitrogen containing laser diode based white light source combined with an infrared illumination source which are driven by drivers disposed in a printed circuit board assembly enclosed in a compact housing and powered by a portable power supply therein. The portable lighting apparatus includes a first wavelength converter configured to output a white-color emission and an infrared emission. A beam shaper may be configured to direct the white-color emission and the infrared emission to a front aperture of a compact housing of the portable lighting apparatus. An optical transmitting unit is configured to project or transmit a directional light beam of the white light emission and/or the infrared emission for illuminating a target of interest, transmitting a pulsed sensing signal or modulated data signal generated by the drivers therein. In some configurations, detectors are included for depth sensing and visible/infrared light communications.

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