Micro device transfer head array with metal electrodes
    111.
    发明授权
    Micro device transfer head array with metal electrodes 有权
    具有金属电极的微器件转印头阵列

    公开(公告)号:US09255001B2

    公开(公告)日:2016-02-09

    申请号:US13710438

    申请日:2012-12-10

    CPC classification number: B81C99/002 H01L21/6835 H01L2221/68354

    Abstract: A monopolar and bipolar micro device transfer head array and method of forming a monopolar and bipolar micro device transfer array are described. In an embodiment, a micro device transfer head array includes a base substrate, a first insulating layer formed over the base substrate, and an array of mesa structures. A second insulating layer may be formed over the mesa structure, a patterned metal layer over the second insulating layer, and a dielectric layer covering the metal layer.

    Abstract translation: 描述了单极和双极微器件转移头阵列和形成单极和双极微器件转移阵列的方法。 在一个实施例中,微器件转移头阵列包括基底基板,形成在基底基板上的第一绝缘层和台面结构阵列。 可以在台面结构之上形成第二绝缘层,在第二绝缘层上形成图案化金属层,以及覆盖金属层的电介质层。

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