公开(公告)号：US12054827B2

公开(公告)日：2024-08-06

申请号：US17041403

申请日：2019-04-01

Applicant: Applied Materials, Inc.

Inventor： Shishi Jiang ,  Pramit Manna ,  Abhijit Basu Mallick ,  Suresh Chand Seth ,  Srinivas D. Nemani

IPC: C23C16/505 ,  C23C16/24 ,  C23C16/56 ,  H01J37/32 ,  H01L21/3205 ,  H01L21/321

CPC classification number: C23C16/505 ,  C23C16/24 ,  C23C16/56 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32724 ,  H01L21/32055 ,  H01L21/321 ,  H01J2237/3321

Abstract: Embodiments herein provide methods of plasma treating an amorphous silicon layer deposited using a flowable chemical vapor deposition (FCVD) process. In one embodiment, a method of processing a substrate includes plasma treating an amorphous silicon layer by flowing a substantially silicon-free hydrogen treatment gas into a processing volume of a processing chamber, the processing volume having the substrate disposed on a substrate support therein, forming a treatment plasma of the substantially silicon-free hydrogen treatment gas, and exposing the substrate having the amorphous silicon layer deposited on a surface thereof to the treatment plasma. Herein, the amorphous silicon layer is deposited using an FCVD process. The FCVD process includes positioning the substrate on the substrate support, flowing a processing gas into the processing volume, forming a deposition plasma of the processing gas, exposing the surface of the substrate to the deposition plasma, and depositing the amorphous silicon layer on the surface of the substrate.

公开(公告)号：US12020982B2

公开(公告)日：2024-06-25

申请号：US17587525

申请日：2022-01-28

Applicant: Applied Materials, Inc.

Inventor： Srinivas Gandikota ,  Steven C. H. Hung ,  Srinivas D. Nemani ,  Yixiong Yang ,  Susmit Singha Roy ,  Nikolaos Bekiaris

IPC: H01L21/768 ,  H01L23/48

CPC classification number: H01L21/76864 ,  H01L21/76898 ,  H01L23/481

Abstract: A method of forming an electronic device is disclosed. The method comprises forming depositing a metal on a substrate, the metal comprising one or more of copper (Cu), titanium (Ti), or tantalum (Ta). A metal cap is deposited on the metal. The metal cap comprises one or more of molybdenum (Mo), ruthenium (Ru), iridium (Ir), rhodium (Rh), palladium (Pd), silver (Ag), osmium (Os), platinum (Pt), or gold (Au). The substrate is then exposed to an anneal process, e.g., a hydrogen high-pressure anneal. The formation of the metal cap on the metal minimizes parasitic adsorption of hydrogen by the underlying metal.

公开(公告)号：US20240120195A1

公开(公告)日：2024-04-11

申请号：US17960979

申请日：2022-10-06

Applicant: Applied Materials, Inc. ,  Regents of the University of California

Inventor： Keith T. Wong ,  Srinivas D. Nemani ,  Ellie Y. Yieh ,  Andrew C. Kummel ,  Yunil Cho ,  James Huang

IPC: H01L21/02 ,  H01L21/67

CPC classification number: H01L21/0228 ,  H01L21/02068 ,  H01L21/02123 ,  H01L21/02304 ,  H01L21/02312 ,  H01L21/67017

Abstract: A method includes forming a conductive material on a first dielectric layer, exposing the conductive material to aniline to produce a passivated surface of the conductive material, and after exposing the conductive material to aniline, forming a second dielectric layer on the first dielectric layer using a deposition process. The deposition process is a water-free and plasma-free deposition process, and the second dielectric layer does not form on the passivated surface of the conductive material.

公开(公告)号：US11934103B2

公开(公告)日：2024-03-19

申请号：US17668080

申请日：2022-02-09

Applicant: Applied Materials, Inc.

Inventor： Douglas A. Buchberger, Jr. ,  Dmitry Lubomirsky ,  John O. Dukovic ,  Srinivas D. Nemani

IPC: G03F7/38

CPC classification number: G03F7/38

Abstract: A method and apparatus for applying an electric field and/or a magnetic field to a photoresist layer without air gap intervention during photolithography processes is provided herein. The method and apparatus include a transfer device and a plurality of modules. The transfer device is configured to rotate a plurality of substrates between each of the modules, wherein one module includes a heating pedestal and another module includes a cooling pedestal. One module is utilized for inserting and removing the substrates from the system. At least the heating module is able to be sealed and filled with a process volume before applying the electric field.

公开(公告)号：US11914299B2

公开(公告)日：2024-02-27

申请号：US17898216

申请日：2022-08-29

Applicant: Applied Materials, Inc.

Inventor： Huixiong Dai ,  Mangesh Ashok Bangar ,  Srinivas D. Nemani ,  Christopher S. Ngai ,  Ellie Y. Yieh

IPC: G03F7/20 ,  H01L21/027 ,  G03F7/30 ,  G03F7/38 ,  G03F7/16

CPC classification number: G03F7/20 ,  G03F7/16 ,  G03F7/30 ,  G03F7/38 ,  H01L21/0274

Abstract: A method for enhancing the depth of focus process window during a lithography process includes applying a photoresist layer comprising a photoacid generator on a material layer disposed on a substrate, exposing a first portion of the photoresist layer unprotected by a photomask to light radiation in a lithographic exposure process, providing a thermal energy to the photoresist layer in a post-exposure baking process, applying an electric field or a magnetic field while performing the post-exposure baking process, and dynamically changing a frequency of the electric field as generated while providing the thermal energy to the photoresist layer.

公开(公告)号：US20240038527A1

公开(公告)日：2024-02-01

申请号：US17873597

申请日：2022-07-26

Applicant: Applied Materials, Inc.

Inventor： Bhargav S. Citla ,  Srinivas D. Nemani ,  Purvam Modi ,  Ellie Y. Yieh

IPC: H01L21/02 ,  H01L21/321 ,  H01L21/3065

CPC classification number: H01L21/02274 ,  H01L21/3211 ,  H01L21/3065 ,  H01L21/02126

Abstract: A method includes depositing a flowable film on a substrate by providing a first input flow, the first input flow including plasma effluents of a first precursor, removing a portion of the flowable film from a sidewall of a feature defined within the substrate to obtain a remaining portion of the flowable film by providing a second input flow, the second input flow including plasma effluents of a second precursor, reducing hydrogen content of the remaining portion of the flowable film to obtain a densified film by providing a third input flow, the third input flow including plasma effluents of a third precursor, and treating the densified film in accordance with a film treatment process.

公开(公告)号：US11862458B2

公开(公告)日：2024-01-02

申请号：US17469529

申请日：2021-09-08

Applicant: Applied Materials, Inc.

Inventor： Bhargav S. Citla ,  Soham Asrani ,  Joshua Rubnitz ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: H01L21/02 ,  H01L21/3065 ,  H01J37/32 ,  H01L21/311

CPC classification number: H01L21/02274 ,  H01J37/32146 ,  H01L21/3065 ,  H01L21/31116 ,  H01J2237/332 ,  H01J2237/334

Abstract: Exemplary processing methods may include forming a plasma of a silicon-containing precursor. The methods may include depositing a flowable film on a semiconductor substrate with plasma effluents of the silicon-containing precursor. The processing region may be at least partially defined between a faceplate and a substrate support on which the semiconductor substrate is seated. A bias power may be applied to the substrate support from a bias power source. The methods may include forming a plasma of a hydrogen-containing precursor within the processing region of the semiconductor processing chamber. The methods may include etching the flowable film from a sidewall of the feature within the semiconductor substrate with plasma effluents of the hydrogen-containing precursor. The methods may include densifying remaining flowable film within the feature defined within the semiconductor substrate with plasma effluents of the hydrogen-containing precursor.

公开(公告)号：US11725274B2

公开(公告)日：2023-08-15

申请号：US16433064

申请日：2019-06-06

Applicant: Applied Materials, Inc.

Inventor： Tobin Kaufman-Osborn ,  Srinivas D. Nemani ,  Ludovic Godet ,  Qiwei Liang ,  Adib Khan

IPC: C23C16/02 ,  C23C16/04 ,  H01L21/67 ,  H01L21/687 ,  C23C16/455 ,  C23C16/54 ,  C23C16/56 ,  H01L21/02 ,  H01J37/32 ,  H01L21/677 ,  H01L21/8234

CPC classification number: C23C16/042 ,  C23C16/02 ,  C23C16/45502 ,  C23C16/45544 ,  C23C16/45561 ,  C23C16/45582 ,  C23C16/54 ,  C23C16/56 ,  H01J37/32357 ,  H01J37/32724 ,  H01J37/32733 ,  H01J37/32899 ,  H01L21/0228 ,  H01L21/02263 ,  H01L21/02299 ,  H01L21/02304 ,  H01L21/6719 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67167 ,  H01L21/67196 ,  H01L21/67207 ,  H01L21/67742 ,  H01L21/67748 ,  H01L21/67754 ,  H01L21/68785 ,  H01J2237/327 ,  H01J2237/334 ,  H01L21/823431

Abstract: Embodiments described herein relate to apparatus and methods for processing a substrate. In one embodiment, a cluster tool apparatus is provided having a transfer chamber and a pre-clean chamber, a self-assembled monolayer (SAM) deposition chamber, an atomic layer deposition (ALD) chamber, and a post-processing chamber disposed about the transfer chamber. A substrate may be processed by the cluster tool and transferred between the pre-clean chamber, the SAM deposition chamber, the ALD chamber, and the post-processing chamber. Transfer of the substrate between each of the chambers may be facilitated by the transfer chamber which houses a transfer robot.

公开(公告)号：US11626284B2

公开(公告)日：2023-04-11

申请号：US17150781

申请日：2021-01-15

Applicant: Applied Materials, Inc.

Inventor： Keith T. Wong ,  Hurshvardhan Srivastava ,  Srinivas D. Nemani ,  Johannes M. van Meer ,  Rajesh Prasad

IPC: H01L21/02 ,  H01L29/66 ,  C23C14/58 ,  H01L29/76 ,  C23C16/30 ,  C23C16/455 ,  C23C16/56 ,  C23C14/48 ,  H01L29/24

Abstract: A method to form a 2-Dimensional transistor channel may include depositing an amorphous layer comprising a 2-dimensional material, implanting an implant species into the amorphous layer; and annealing the amorphous layer after the implanting. As such, the amorphous layer may form a doped crystalline layer.

公开(公告)号：US20230071366A1

公开(公告)日：2023-03-09

申请号：US17469529

申请日：2021-09-08

Applicant: Applied Materials, Inc.

Inventor： Bhargav S. Citla ,  Soham Asrani ,  Joshua Rubnitz ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: H01L21/02 ,  H01L21/3065 ,  H01L21/311 ,  H01J37/32

Abstract: Exemplary processing methods may include forming a plasma of a silicon-containing precursor. The methods may include depositing a flowable film on a semiconductor substrate with plasma effluents of the silicon-containing precursor. The processing region may be at least partially defined between a faceplate and a substrate support on which the semiconductor substrate is seated. A bias power may be applied to the substrate support from a bias power source. The methods may include forming a plasma of a hydrogen-containing precursor within the processing region of the semiconductor processing chamber. The methods may include etching the flowable film from a sidewall of the feature within the semiconductor substrate with plasma effluents of the hydrogen-containing precursor. The methods may include densifying remaining flowable film within the feature defined within the semiconductor substrate with plasma effluents of the hydrogen-containing precursor.