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    Excited gas injection for ion implant control
    151.
    发明授权
    Excited gas injection for ion implant control 有权
    激发气体注入用于离子注入控制

    公开(公告)号：US08501624B2

    公开(公告)日：2013-08-06

    申请号：US12328096

    申请日：2008-12-04

    Applicant: Bon-Woong Koo ,  Victor Benveniste ,  Christopher A. Rowland ,  Craig R. Chaney ,  Frank Sinclair ,  Neil J. Bassom

    Inventor： Bon-Woong Koo ,  Victor Benveniste ,  Christopher A. Rowland ,  Craig R. Chaney ,  Frank Sinclair ,  Neil J. Bassom

    IPC: H01L21/302 ,  H01L21/461

    CPC classification number: H01J27/022 ,  H01J37/08 ,  H01J37/3171 ,  H01J37/32357 ,  H01J37/32412 ,  H01J37/32422 ,  H01J2237/006 ,  H01J2237/061 ,  H01J2237/0815 ,  H01J2237/24514

    Abstract: An ion source that utilizes exited and/or atomic gas injection is disclosed. In an ion beam application, the source gas can be used directly, as it is traditionally supplied. Alternatively or additionally, the source gas can be altered by passing it through a remote plasma source prior to being introduced to the ion source chamber. This can be used to create excited neutrals, heavy ions, metastable molecules or multiply charged ions. In another embodiment, multiple gasses are used, where one or more of the gasses are passed through a remote plasma generator. In certain embodiments, the gasses are combined in a single plasma generator before being supplied to the ion source chamber. In plasma immersion applications, plasma is injected into the process chamber through one or more additional gas injection locations. These injection locations allow the influx of additional plasma, produced by remote plasma sources external to the process chamber.

    Abstract translation: 公开了一种利用离子源和/或原子气体注入的离子源。 在离子束施加中，源气体可以直接使用，如通常提供的。 或者或另外，源气体可以在被引入离子源室之前通过将其通过远程等离子体源来改变。 这可以用于产生兴奋的中性粒子，重离子，亚稳分子或多电荷离子。 在另一个实施例中，使用多个气体，其中一个或多个气体通过远程等离子体发生器。 在某些实施方案中，气体在被提供给离子源室之前组合在单个等离子体发生器中。 在等离子体浸渍应用中，通过一个或多个另外的气体注入位置将等离子体注入到处理室中。 这些注入位置允许通过处理室外部的远程等离子体源产生的附加等离子体的流入。

    BORON ION IMPLANTATION USING ALTERNATIVE FLUORINATED BORON PRECURSORS, AND FORMATION OF LARGE BORON HYDRIDES FOR IMPLANTATION
    155.
    发明申请
    BORON ION IMPLANTATION USING ALTERNATIVE FLUORINATED BORON PRECURSORS, AND FORMATION OF LARGE BORON HYDRIDES FOR IMPLANTATION 有权
    使用替代性氟化硼前体的硼离子植入和形成用于植入的大量硼氢化合物

    公开(公告)号：US20130137250A1

    公开(公告)日：2013-05-30

    申请号：US13726826

    申请日：2012-12-26

    Applicant: Advanced Technology Materials, Inc.

    Inventor： W. Karl Olander ,  Jose I. Arno ,  Robert Kaim

    IPC: H01L21/265

    CPC classification number: H01L21/265 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/082 ,  H01L21/26513 ,  H01L21/2658

    Abstract: Methods of implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. A method of manufacturing a semiconductor device including implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. Also disclosed are a system for supplying a boron hydride precursor, and methods of forming a boron hydride precursor and methods for supplying a boron hydride precursor. In one implementation of the invention, the boron hydride precursors are generated for cluster boron implantation, for manufacturing semiconductor products such as integrated circuitry.

    Abstract translation: 使用比三氟化硼更容易裂解的含氟含硼掺杂剂物质注入含硼离子的方法。 一种制造半导体器件的方法，包括使用比三氟化硼更容易切割的氟化含硼掺杂物物种注入含硼离子。 还公开了用于提供硼氢化物前体的体系，以及形成硼氢化物前体的方法和用于供应硼氢化物前体的方法。 在本发明的一个实施方案中，为了制造半导体产品例如集成电路，产生用于簇硼注入的硼氢化物前体。

    CHARGED PARTICLE BEAM DEVICE AND SAMPLE PRODUCTION METHOD
    158.
    发明申请
    CHARGED PARTICLE BEAM DEVICE AND SAMPLE PRODUCTION METHOD 审中-公开
    充电颗粒光束装置和样品生产方法

    公开(公告)号：US20130105302A1

    公开(公告)日：2013-05-02

    申请号：US13808261

    申请日：2011-07-05

    Applicant: Terutaka Nanri ,  Tsuyoshi Onishi ,  Satoshi Tomimatsu

    Inventor： Terutaka Nanri ,  Tsuyoshi Onishi ,  Satoshi Tomimatsu

    IPC: C23F4/02

    CPC classification number: C23F4/02 ,  G01N1/32 ,  G01N23/225 ,  H01J37/08 ,  H01J37/244 ,  H01J37/3002 ,  H01J37/3056 ,  H01J2237/31745

    Abstract: Provided is a technique capable of removing a damaged layer of a sample piece generated through an FIB fabrication sufficiently but at the minimum. A charged particle beam device includes a first element ion beam optical system unit (110) which performs a first FIB fabrication to form a sample piece from a sample, a second element ion beam optical system unit (120) which performs a second FIB fabrication to remove a damaged layer formed on a surface of the sample piece, and a first element detector (140) which detects an first element existing in the damaged layer. A termination of the second FIB fabrication is determined if an amount of the first element existing in the damaged layer becomes smaller than a predefined threshold value.

    Abstract translation: 提供了一种能够通过FIB制造而产生的样品片的损伤层除去至少最小的技术。 带电粒子束装置包括：第一元件离子束光学系统单元，其执行第一FIB制造以从样品形成样品片;第二元件离子束光学系统单元，其执行第二FIB制造， 去除形成在样品表面上的损伤层，以及检测存在于损伤层中的第一元素的第一元件检测器（140）。 如果损伤层中存在的第一元素的量变得小于预定阈值，则确定第二FIB制造的终止。

    Internal Split Faraday Shield for an Inductively Coupled Plasma Source
    159.
    发明申请
    Internal Split Faraday Shield for an Inductively Coupled Plasma Source 审中-公开
    用于电感耦合等离子体源的内部分离法拉第屏蔽

    公开(公告)号：US20130098871A1

    公开(公告)日：2013-04-25

    申请号：US13277072

    申请日：2011-10-19

    Applicant: Tom Miller ,  Shouyin Zhang

    Inventor： Tom Miller ,  Shouyin Zhang

    IPC: C23F1/00 ,  C23F1/08

    CPC classification number: H01J37/32651 ,  H01J37/08 ,  H01J37/321 ,  H01J37/32504 ,  H01J2237/0206 ,  H01J2237/026 ,  H01J2237/31749

    Abstract: An inductively coupled plasma source for a focused charged particle beam system includes a conductive shield within the plasma chamber in order to reduce capacitative coupling to the plasma. The internal conductive shield is maintained at substantially the same potential as the plasma source by a biasing electrode or by the plasma. The internal shield allows for a wider variety of cooling methods on the exterior of the plasma chamber.

    Abstract translation: 用于聚焦带电粒子束系统的电感耦合等离子体源包括在等离子体室内的导电屏蔽，以便减少与等离子体的电容耦合。 通过偏置电极或等离子体将内部导电屏蔽层保持在与等离子体源大致相同的电位。 内部屏蔽允许在等离子体室的外部使用更多种类的冷却方法。

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