公开(公告)号：US20190333752A1

公开(公告)日：2019-10-31

申请号：US16394369

申请日：2019-04-25

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： MARK CARRUTHERS

IPC: H01L21/02 ,  H01L27/32 ,  H01L27/12 ,  H01L51/00 ,  H01L51/56

Abstract: A method of depositing a SiN film onto a flexible substrate includes providing the flexible substrate, and depositing the SiN film onto the flexible substrate in a plasma enhanced chemical vapour deposition (PECVD) process using SiH4, N2 and H2, in which the temperature of the substrate is 200° C. or less and SiH4 is introduced into the PECVD process at a flow rate of greater than 100 sccm.

公开(公告)号：US20190259640A1

公开(公告)日：2019-08-22

申请号：US16399193

申请日：2019-04-30

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： Gautham Ragunathan ,  David Tossell ,  Oliver Ansell

IPC: H01L21/67 ,  H01L21/683 ,  H01J37/32 ,  H01L21/78 ,  H01L21/687 ,  H01L21/3065

Abstract: An apparatus is for plasma dicing a semiconductor substrate of the type forming part of a workpiece, the workpiece further including a carrier sheet on a frame member, where the carrier sheet carries the semiconductor substrate. The apparatus includes a chamber, a plasma production device configured to produce a plasma within the chamber suitable for dicing the semiconductor substrate, a workpiece support located in the chamber for supporting the workpiece through contact with the carrier sheet, and a frame cover element configured to, in use, contact the frame member thereby clamping the carrier sheet against an auxiliary element disposed in the chamber.

公开(公告)号：US10153135B2

公开(公告)日：2018-12-11

申请号：US15190722

申请日：2016-06-23

Applicant: SPTS Technologies Limited

Inventor： Anthony Paul Wilby ,  Stephen R Burgess ,  Ian Moncrieff ,  Paul Densley ,  Clive L Widdicks ,  Paul Rich ,  Adrian Thomas

IPC: H01J37/32 ,  H01L21/67 ,  C23C14/34

Abstract: An ICP plasma etching apparatus for etching a substrate includes at least one chamber, a substrate support positioned within the chamber, a plasma production device for producing a plasma for use in etching the substrate, and a protective structure which surrounds the substrate support so that, in use, a peripheral portion of the substrate is protected from unwanted deposition of material. The protective structure is arranged to be electrically biased and is formed from a metallic material so that metallic material can be sputtered from the protective structure onto an interior surface of the chamber to adhere particulate material to the interior surface.

公开(公告)号：US20180308670A1

公开(公告)日：2018-10-25

申请号：US15899634

申请日：2018-02-20

Applicant: SPTS Technologies Limited

Inventor： ANTHONY WILBY ,  STEVE BURGESS ,  IAN MONCRIEFF ,  CLIVE WIDDICKS ,  SCOTT HAYMORE ,  RHONDA HYNDMAN

IPC: H01J37/34 ,  C23C14/35 ,  C23C14/34 ,  H01L21/285 ,  H01L21/768

CPC classification number: H01J37/3408 ,  C23C14/345 ,  C23C14/351 ,  C23C14/50 ,  C23C14/505 ,  H01J37/32669 ,  H01J37/32715 ,  H01J37/3405 ,  H01J37/3452 ,  H01J37/3485 ,  H01L21/2855 ,  H01L21/76877

Abstract: A method and apparatus are for controlling stress variation in a material layer formed via pulsed DC physical vapour deposition. The method includes the steps of providing a chamber having a target from which the material layer is formed and a substrate upon which the material layer is formable, and subsequently introducing a gas within the chamber. The method further includes generating a plasma within the chamber and applying a first magnetic field proximate the target to substantially localise the plasma adjacent the target. An RF bias is applied to the substrate to attract gas ions from the plasma toward the substrate and a second magnetic field is applied proximate the substrate to steer gas ions from the plasma to selective regions upon the material layer formed on the substrate.

公开(公告)号：US10062576B2

公开(公告)日：2018-08-28

申请号：US15588779

申请日：2017-05-08

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： Nicolas Launay ,  Maxine Varvara

IPC: H01L21/3065 ,  H01J37/305 ,  H01J37/32 ,  H01L21/67 ,  H01L21/683 ,  H01L21/768

CPC classification number: H01L21/30655 ,  H01J37/3053 ,  H01J37/32082 ,  H01J37/32366 ,  H01J37/32403 ,  H01J37/32422 ,  H01J37/32577 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/6831 ,  H01L21/76898

Abstract: A method of plasma etching one or more features in a silicon substrate includes performing a main etch using a cyclical etch process in which a deposition step and an etch step are alternately repeated, and performing an over etch to complete the plasma etching of the features. The over etch includes one or more etch steps of a first kind and one or more etch steps of a second kind, each of the etch steps of the first and second kind include etching by ion bombardment of the silicon substrate. The ion bombardment during the one or more etch steps of the second kind has an inward inclination with respect to ion bombardment during the one or more etch steps of the first kind.

公开(公告)号：US09640370B2

公开(公告)日：2017-05-02

申请号：US14195887

申请日：2014-03-04

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： Oliver James Ansell

IPC: H01J37/32 ,  H01L21/66 ,  B81C99/00

CPC classification number: H01J37/32963 ,  B81C99/0065 ,  B81C2201/0135 ,  B81C2201/0142 ,  H01J37/32972 ,  H01L22/26

Abstract: A method is for etching the whole width of a substrate to expose buried features. The method includes etching a face of a substrate across its width to achieve substantially uniform removal of material; illuminating the etched face during the etch process; applying edge detection techniques to light reflected or scattered from the face to detect the appearances of buried features; and modifying the etch in response to the detection of the buried feature. An etching apparatus for etching substrate across its width to expose buried is also disclosed.

公开(公告)号：US20160148787A1

公开(公告)日：2016-05-26

申请号：US14951009

申请日：2015-11-24

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： STEPHEN R. BURGESS ,  ANTHONY PAUL WILBY

IPC: H01J37/32 ,  H01J37/18 ,  C23C14/34

CPC classification number: H01J37/32467 ,  C23C14/046 ,  C23C14/34 ,  H01J37/18 ,  H01J37/321 ,  H01J37/32862 ,  H01J37/34

Abstract: A plasma etching apparatus is for etching a substrate and includes at least one chamber, a substrate support positioned within the at least one chamber, and a plasma production device for producing a plasma for use in etching the substrate. The plasma production device comprises an electrically conductive coil which is positioned within the at least one chamber, and the coil is formed from a metallic material which can be sputtered onto an interior surface of the at least one chamber.

Abstract translation: 等离子体蚀刻装置用于蚀刻基板，并且包括至少一个室，位于至少一个室内的基板支撑件，以及用于产生用于蚀刻基板的等离子体的等离子体生成装置。 等离子体生产装置包括位于至少一个室内的导电线圈，并且线圈由能够溅射到至少一个室的内表面上的金属材料形成。

公开(公告)号：US09165762B2

公开(公告)日：2015-10-20

申请号：US13869369

申请日：2013-04-24

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： Kathrine Crook ,  Andrew Price ,  Mark Carruthers ,  Daniel Archard ,  Stephen Burgess

IPC: H01L21/316 ,  H01L21/02 ,  C23C16/40 ,  C23C16/505 ,  C23C16/56

CPC classification number: H01L21/02274 ,  C23C16/402 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/0234

Abstract: A method of forming silicon dioxide films using plasma enhanced chemical vapor deposition (PECVD) uses tetraethyl orthosilicate (TEOS), oxygen or a source of oxygen, and hydrogen as precursors. The method can be carried out at low temperatures in a range of 125 to 175° C. which is useful for manufacturing wafers with through silicon vias.

Abstract translation: 使用等离子体增强化学气相沉积（PECVD）形成二氧化硅膜的方法使用原硅酸四乙酯（TEOS），氧或氧源，以及氢作为前体。 该方法可以在125-175℃的低温下进行，这对于通过硅通孔制造晶片是有用的。

公开(公告)号：US20140174658A1

公开(公告)日：2014-06-26

申请号：US14195887

申请日：2014-03-04

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： Oliver James Ansell

IPC: H01J37/32 ,  H01L21/66

CPC classification number: H01J37/32963 ,  B81C99/0065 ,  B81C2201/0135 ,  B81C2201/0142 ,  H01J37/32972 ,  H01L22/26

Abstract: A method is for etching the whole width of a substrate to expose buried features. The method includes etching a face of a substrate across its width to achieve substantially uniform removal of material; illuminating the etched face during the etch process; applying edge detection techniques to light reflected or scattered from the face to detect the appearances of buried features; and modifying the etch in response to the detection of the buried feature. An etching apparatus for etching substrate across its width to expose buried is also disclosed.

Abstract translation: 一种方法是蚀刻衬底的整个宽度以暴露掩埋的特征。 该方法包括在其宽度上蚀刻衬底的表面以实现材料的基本上均匀的去除; 在蚀刻过程中照射蚀刻的面; 将边缘检测技术应用于从脸部反射或散射的光，以检测埋藏特征的外观; 以及响应于所述掩埋特征的检测来修改所述蚀刻。 还公开了一种用于蚀刻衬底跨越其宽度以暴露掩埋的蚀刻装置。

公开(公告)号：US08728337B2

公开(公告)日：2014-05-20

申请号：US13773711

申请日：2013-02-22

Applicant: SPTS Technologies Limited

Inventor： Carl Brancher ,  John MacNeil ,  Robert Trowell

IPC: H01L21/306

CPC classification number: H01L21/306 ,  B44C1/227 ,  C23C16/455 ,  C23C16/45544 ,  C23C16/45589 ,  H01L21/6719 ,  H01L21/67207

Abstract: A method is for processing a substrate. The method includes placing the substrate in a process volume and introducing a process gas or vapor into the process volume and/or subsequently removing gas or vapor from the volume. The step of introducing and/or removing the gas is at least partially performed by moving a movable wall to change the process volume in an appropriate sense.

Abstract translation: 一种用于处理衬底的方法。 该方法包括将基底放置在处理体积中并将工艺气体或蒸气引入到处理体积中和/或随后从体积中除去气体或蒸气。 引入和/或去除气体的步骤至少部分地通过移动可移动壁来适当地改变处理体积来执行。