中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

24 records (took 0.028 seconds)

    Semiconductor switching arrangement having a normally on and a normally off transistor
    11.
    发明授权
    Semiconductor switching arrangement having a normally on and a normally off transistor 有权
    具有常开和常关晶体管的半导体开关装置

    公开(公告)号：US08729566B2

    公开(公告)日：2014-05-20

    申请号：US13086639

    申请日：2011-04-14

    Applicant: Daniel Domes ,  Uwe Jansen

    Inventor： Daniel Domes ,  Uwe Jansen

    IPC: H01L29/12

    CPC classification number: H03K17/063 ,  H03K2017/066 ,  H03K2017/6875 ,  Y10T29/41

    Abstract: A semiconductor switching arrangement includes a normally on semiconductor component of a first conduction type and a normally off semiconductor component of a second conduction type which is the complement of the first conduction type. A load path of the normally off semiconductor component is connected in series with the load path of the normally on semiconductor component. A first actuation circuit connected between the control connection of the normally on semiconductor component and a load path connection of the normally on semiconductor component. The load path connection of the normally on semiconductor component is arranged between the normally on and normally off semiconductor components. A second actuation circuit is connected between the control connection of the normally off semiconductor component and a load path connection of the normally off semiconductor component. The load path connection of the normally off semiconductor component is arranged between the normally on and normally off semiconductor components.

    Abstract translation: 半导体开关装置包括作为第一导电类型的互补的第二导电类型的常开半导体元件和第二导电类型的常关半导体元件。 常关半导体部件的负载路径与正常导通的半导体部件的负载路径串联连接。 连接在正常导通半导体部件的控制连接和正常导通的半导体部件的负载路径连接之间的第一致动电路。 正常导通的半导体部件的负载路径连接被布置在正常和常关的半导体部件之间。 第二驱动电路连接在常关半导体部件的控制连接和常关半导体部件的负载路径连接之间。 正常关闭半导体部件的负载路径连接被布置在正常关闭和常关的半导体部件之间。

    Low Stray Inductance Power Module
    13.
    发明申请
    Low Stray Inductance Power Module 有权
    低杂散电感功率模块

    公开(公告)号：US20130105960A1

    公开(公告)日：2013-05-02

    申请号：US13281548

    申请日：2011-10-26

    Applicant: Patrick Jones ,  Andre Christmann ,  Daniel Domes

    Inventor： Patrick Jones ,  Andre Christmann ,  Daniel Domes

    IPC: H01L23/48

    CPC classification number: H01L25/07 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/05553 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/4846 ,  H01L2224/48472 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/19107 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

    Abstract: A power module includes a substrate including an insulating member and a patterned metallization on the insulating member. The patterned metallization is segmented into a plurality of spaced apart metallization regions. Adjacent ones of the metallization regions are separated by a groove which extends through the patterned metallization to the insulating member. A first power transistor circuit includes a first power switch attached to a first one of the metallization regions and a second power switch attached to a second one of the metallization regions adjacent a first side of the first metallization region. A second power transistor circuit includes a third power switch attached to the first metallization region and a fourth power switch attached to a third one of the metallization regions adjacent a second side of the first metallization region which opposes the first side. The second power transistor circuit mirrors the first power transistor circuit.

    Abstract translation: 功率模块包括在绝缘构件上包括绝缘构件和图案化金属化的衬底。 图案化金属化被分割成多个间隔开的金属化区域。 相邻的金属化区域被延伸通过图案化金属化的凹槽分隔成绝缘构件。 第一功率晶体管电路包括附接到第一金属化区域的第一功率开关和附接到第一金属化区域的第一侧附近的第二金属化区域的第二功率开关。 第二功率晶体管电路包括附接到第一金属化区域的第三电力开关和附接到与第一侧相对的第一金属化区域的第二侧附近的第三金属化区域的第四电力开关。 第二功率晶体管电路反射第一功率晶体管电路。

    Detection of the Conduction State of an RC-IGBT
    14.
    发明申请
    Detection of the Conduction State of an RC-IGBT 有权
    检测RC-IGBT的导通状态

    公开(公告)号：US20120112775A1

    公开(公告)日：2012-05-10

    申请号：US12943079

    申请日：2010-11-10

    Applicant: Daniel Domes

    Inventor： Daniel Domes

    IPC: G01R19/14 ,  G01R27/26 ,  H03K17/72

    CPC classification number: H03K17/18

    Abstract: A circuit arrangement includes: a reverse conducting IGBT configured to allow for conducting a load current in a forward direction and in a reverse direction, the IGBT having a load current path and a gate electrode; a gate control unit connected to the gate electrode and configured to activate or deactivate the IGBT by charging or, respectively, discharging the gate electrode in accordance with a gate control signal; a gate driver unit configured to detect whether the IGBT conducts current in the forward direction or the reverse direction by sensing a gate current caused by a change of a voltage drop across the load path due to a changing of the reverse conducting IGBT into its reverse conducting state, the gate control unit further configured to deactivate the IGBT or to prevent an activation of the IGBT via its gate electrode when the gate driver unit detects that the IGBT is in its reverse conducting state.

    Abstract translation: 电路装置包括：反向导通IGBT，被配置为允许在正向和反向导通负载电流，所述IGBT具有负载电流路径和栅电极; 栅极控制单元，连接到所述栅电极并且被配置为通过根据栅极控制信号充电或分别放电所述栅电极来激活或去激活所述IGBT; 栅极驱动器单元，被配置为通过检测由于反向导通IGBT变为其反向导通而在负载路径上的电压降的变化引起的栅极电流来检测IGBT是正向还是反向导通电流 状态，门控制单元还被配置为当栅极驱动器单元检测到IGBT处于其反向导通状态时，通过其栅电极去激活IGBT或者防止IGBT的激活。

    Low inductance capacitor module and power system with low inductance capacitor module
    17.
    发明授权
    Low inductance capacitor module and power system with low inductance capacitor module 有权
    低电感电容模块和低电感电容模块电力系统

    公开(公告)号：US08787003B2

    公开(公告)日：2014-07-22

    申请号：US13271491

    申请日：2011-10-12

    Applicant: Daniel Domes ,  Reinhold Bayerer

    Inventor： Daniel Domes ,  Reinhold Bayerer

    IPC: H01G4/228 ,  H01G4/008 ,  H01G4/06 ,  H01G2/08 ,  H01G9/00 ,  H05K5/02

    CPC classification number: H05K7/1432 ,  H01G2/06 ,  H01G4/40 ,  H01L2224/48472

    Abstract: According to one embodiment of a capacitor module, the capacitor module includes a substrate having a metallization on a first side of the substrate, a plurality of connectors electrically coupled to the metallization and a plurality of capacitors disposed on the metallization. The plurality of capacitors includes a first set of capacitors electrically connected in parallel between a first set of the connectors and a second set of the connectors. The capacitor module further includes a housing enclosing the plurality of capacitors within the capacitor module.

    Abstract translation: 根据电容器模块的一个实施例，电容器模块包括在衬底的第一侧上具有金属化的衬底，电耦合到金属化的多个连接器和设置在金属化上的多个电容器。 多个电容器包括并联电连接在第一组连接器和第二组连接器之间的第一组电容器。 电容器模块还包括封装电容器模块内的多个电容器的壳体。

Patent Agency Ranking