公开(公告)号：US09153552B2

公开(公告)日：2015-10-06

申请号：US14570785

申请日：2014-12-15

Applicant: Intel Corporation

Inventor： Weng Hong Teh ,  Deepak Kulkarni ,  Chia-Pin Chiu ,  Tannaz Harirchian ,  John S. Guzek

IPC: H01L21/44 ,  H01L21/48 ,  H01L23/00 ,  H01L23/367 ,  H01L23/433 ,  H01L23/498 ,  H01L23/538 ,  H01L23/36 ,  H01L21/56 ,  H01L23/34

CPC classification number: H01L24/20 ,  H01L21/56 ,  H01L23/34 ,  H01L23/36 ,  H01L23/367 ,  H01L23/3677 ,  H01L23/4334 ,  H01L23/49822 ,  H01L23/5389 ,  H01L24/19 ,  H01L25/18 ,  H01L2224/04105 ,  H01L2224/06181 ,  H01L2224/16145 ,  H01L2224/211 ,  H01L2224/32245 ,  H01L2224/73203 ,  H01L2224/73259 ,  H01L2224/73267 ,  H01L2924/10253 ,  H01L2924/15747 ,  H01L2924/00

Abstract: An example includes a die package including a microelectronic die having a lower die surface, an upper die surface parallel to the lower die surface, and a die side, the microelectronic die including an active region and an inactive region. The example optionally includes a heat spreader having a lower heat spreader surface, an upper heat spreader surface parallel to the lower heat spreader surface, and at least one heat spreader side, the heat spreader disposed on the upper surface of the microelectronic die in thermal communication with the inactive region of the die and electrically insulated from the active region. The example optionally includes an encapsulation material encapsulating the die side and the heat spreader side and lower heat spreader surface, the encapsulation material including a lower surface substantially parallel to the die lower surface and an upper surface substantially parallel to the die upper surface.

Abstract translation: 一个实例包括包括具有下模表面的微电子管芯，平行于下模表面的上模表面和管芯侧的管芯封装，该微电子管芯包括有源区和非活性区。 该实施例可选地包括具有较低散热器表面的散热器，平行于下部散热器表面的上部散热器表面和至少一个散热器侧，散热器布置在热电连接的微电子管芯的上表面上 具有裸片的非活性区域并与活性区电绝缘。 该实施例可选地包括封装模具侧和散热器侧和下部散热器表面的封装材料，该封装材料包括基本上平行于模具下表面的下表面和基本上平行于模具上表面的上表面。

公开(公告)号：US11798892B2

公开(公告)日：2023-10-24

申请号：US17149670

申请日：2021-01-14

Applicant: Intel Corporation

Inventor： John S. Guzek

IPC: H01L23/538 ,  H01L23/13 ,  H01L21/56 ,  H01L23/498 ,  H01L25/07 ,  H01L25/065 ,  H01L23/48 ,  H01L23/31

CPC classification number: H01L23/5389 ,  H01L21/56 ,  H01L21/568 ,  H01L23/13 ,  H01L23/48 ,  H01L23/49816 ,  H01L23/49833 ,  H01L23/49838 ,  H01L25/065 ,  H01L25/0657 ,  H01L25/07 ,  H01L23/3128 ,  H01L23/49827 ,  H01L2224/16 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2924/18161

Abstract: Integrated circuit (IC) packages having a through-via interposer with an embedded die, as well as related structures, devices, and methods, are disclosed herein. For example, in some embodiments, an IC package may include a through-via interposer with an embedded die, the through-via connections having front to back conductivity. In some embodiments, a die may be disposed on the back side of an IC package having a through-via interposer with an embedded die and may be electrically coupled to the embedded die. In some embodiments, a second IC package in a package-on-package (PoP) arrangement may be disposed on the back side of an IC package having a through-via interposer with an embedded die and may be electrically coupled to the conductive vias.

公开(公告)号：US20230187386A1

公开(公告)日：2023-06-15

申请号：US17550236

申请日：2021-12-14

Applicant: Intel Corporation

Inventor： Srinivas V. Pietambaram ,  Tarek A. Ibrahim ,  Rahul N. Manepalli ,  John S. Guzek ,  Hamid Azimi

IPC: H01L23/64 ,  H01L23/00 ,  H01L23/13 ,  H01L23/498 ,  H01L49/02

CPC classification number: H01L23/645 ,  H01L24/16 ,  H01L23/13 ,  H01L23/49827 ,  H01L23/49838 ,  H01L28/10 ,  H01L2224/16227 ,  H01L2924/19042 ,  H01L2924/19103

Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a substrate having a first surface and an opposing second surface, the second surface having a cavity; a first die at least partially nested in the cavity; an insulating material on the second surface of the substrate, the insulating material having a first surface and an opposing second surface, wherein the first surface of the insulating material is at the second surface of the substrate; a planar inductor embedded in the insulating material, the planar inductor including a thin film at least partially surrounding a conductive trace; and a second die, at the second surface of the insulating material, electrically coupled to the first die.

公开(公告)号：US10366951B2

公开(公告)日：2019-07-30

申请号：US15620555

申请日：2017-06-12

Applicant: Intel Corporation

Inventor： Robert Starkston ,  Debendra Mallik ,  John S. Guzek ,  Chia-Pin Chiu ,  Deepak Kulkarni ,  Ravindranath V. Mahajan

IPC: H01L21/00 ,  H01L23/522 ,  H01L23/538 ,  H01L25/00 ,  H01L25/065 ,  H01L25/18 ,  H01L21/56 ,  H01L23/00

Abstract: Embodiments of a system and methods for localized high density substrate routing are generally described herein. In one or more embodiments an apparatus includes a medium, first and second circuitry elements, an interconnect element, and a dielectric layer. The medium can include low density routing therein. The interconnect element can be embedded in the medium, and can include a plurality of electrically conductive members therein, the electrically conductive member can be electrically coupled to the first circuitry element and the second circuitry element. The interconnect element can include high density routing therein. The dielectric layer can be over the interconnect die, the dielectric layer including the first and second circuitry elements passing therethrough.

公开(公告)号：US20180350737A1

公开(公告)日：2018-12-06

申请号：US16002740

申请日：2018-06-07

Applicant: Intel Corporation

Inventor： Robert Starkston ,  Debendra Mallik ,  John S. Guzek ,  Chia-Pin Chiu ,  Deepak Kulkarni ,  Ravindranath V. Mahajan

IPC: H01L23/522 ,  H01L23/538 ,  H01L25/065 ,  H01L23/00 ,  H01L25/00 ,  H01L25/18 ,  H01L21/56

Abstract: Embodiments of a system and methods for localized high density substrate routing are generally described herein. In one or more embodiments an apparatus includes a medium, first and second circuitry elements, an interconnect element, and a dielectric layer. The medium can include low density routing therein. The interconnect element can be embedded in the medium, and can include a plurality of electrically conductive members therein, the electrically conductive member can be electrically coupled to the first circuitry element and the second circuitry element. The interconnect element can include high density routing therein. The dielectric layer can be over the interconnect die, the dielectric layer including the first and second circuitry elements passing therethrough.

公开(公告)号：US10008452B2

公开(公告)日：2018-06-26

申请号：US15469964

申请日：2017-03-27

Applicant: INTEL CORPORATION

Inventor： Qing Ma ,  Johanna M. Swan ,  Robert Starkston ,  John S. Guzek ,  Robert L. Sankman ,  Aleksandar Aleksov

IPC: H01L29/40 ,  H01L23/538 ,  H01L23/15 ,  H01L25/065 ,  H01L23/00 ,  H01L21/48 ,  H01L23/498 ,  H01L21/683

CPC classification number: H01L23/5386 ,  B32B2457/08 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/56 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/15 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/5383 ,  H01L23/5384 ,  H01L23/5389 ,  H01L24/09 ,  H01L24/13 ,  H01L24/17 ,  H01L24/19 ,  H01L24/24 ,  H01L24/81 ,  H01L24/82 ,  H01L25/0655 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/08238 ,  H01L2224/12105 ,  H01L2224/13025 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/2402 ,  H01L2224/24137 ,  H01L2224/81192 ,  H01L2224/814 ,  H01L2224/81801 ,  H01L2224/8185 ,  H01L2224/8203 ,  H01L2224/821 ,  H01L2924/12042 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/15724 ,  H01L2924/15747 ,  H01L2924/18162 ,  H01L2924/2064 ,  H01L2924/20641 ,  H05K1/0298 ,  H05K1/0306 ,  H05K1/115 ,  H05K1/185 ,  H05K3/4688 ,  H05K2201/017 ,  H05K2203/1469 ,  Y10T156/1057 ,  H01L2924/014 ,  H01L2924/00

Abstract: Embodiments of the present description relate to the field of fabricating microelectronic structures. The microelectronic structures may include a glass routing structure formed separately from a trace routing structure, wherein the glass routing structure is incorporated with the trace routing substrate, either in a laminated or embedded configuration. Also disclosed are embodiments of a microelectronic package including at least one microelectronic device disposed proximate to the glass routing structure of the microelectronic substrate and coupled with the microelectronic substrate by a plurality of interconnects. Further, disclosed are embodiments of a microelectronic structure including at least one microelectronic device embedded within a microelectronic encapsulant having a glass routing structure attached to the microelectronic encapsulant and a trace routing structure formed on the glass routing structure.

公开(公告)号：US09691711B2

公开(公告)日：2017-06-27

申请号：US15055120

申请日：2016-02-26

Applicant: Intel Corporation

Inventor： Ravindranath V. Mahajan ,  John S. Guzek ,  Adel A. Elsherbini ,  Nitin Ashok Deshpande

IPC: H01L23/552 ,  H01L21/56 ,  H01L23/00

CPC classification number: H01L23/552 ,  H01L21/56 ,  H01L21/568 ,  H01L24/16 ,  H01L24/19 ,  H01L24/96 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/97 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1421 ,  H01L2924/15311 ,  H01L2924/157 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/00 ,  H01L2224/81

Abstract: An electromagnetic interference shield is described for semiconductor chip packages. In some embodiments, a mold compound is formed over a semiconductor die, the die being over a front side redistribution layer on a side opposite the mold compound, the redistribution layer extending past the die and the mold compound extending around the die to contact the redistribution layer. A plurality of vias are formed in the mold compound vertically toward the redistribution layer, the vias being outside of the die, wherein the bottoms of the vias are over a ground layer of the front side redistribution layer. A continuous conductive shielding film is applied over the mold compound and into the vias, wherein the shielding film in some of the vias directly connects to the ground layer and wherein the shielding film in some of the vias does not directly connect to the ground layer, the redistribution layer connecting the metal film to an external ground so that the vias form a shield.

公开(公告)号：US09642248B2

公开(公告)日：2017-05-02

申请号：US14618235

申请日：2015-02-10

Applicant: Intel Corporation

Inventor： Qing Ma ,  Johanna M. Swan ,  Robert Starkston ,  John S. Guzek ,  Robert L. Sankman ,  Aleksandar Aleksov

IPC: H05K1/00 ,  H05K1/03 ,  H01L23/15 ,  H01L23/498 ,  H01L23/538 ,  H01L23/00 ,  H05K1/18 ,  H05K3/46 ,  H01L21/56 ,  H01L21/48 ,  H05K1/02 ,  H05K1/11

CPC classification number: H01L23/5386 ,  B32B2457/08 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/56 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/15 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/5383 ,  H01L23/5384 ,  H01L23/5389 ,  H01L24/09 ,  H01L24/13 ,  H01L24/17 ,  H01L24/19 ,  H01L24/24 ,  H01L24/81 ,  H01L24/82 ,  H01L25/0655 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/08238 ,  H01L2224/12105 ,  H01L2224/13025 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/2402 ,  H01L2224/24137 ,  H01L2224/81192 ,  H01L2224/814 ,  H01L2224/81801 ,  H01L2224/8185 ,  H01L2224/8203 ,  H01L2224/821 ,  H01L2924/12042 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/15724 ,  H01L2924/15747 ,  H01L2924/18162 ,  H01L2924/2064 ,  H01L2924/20641 ,  H05K1/0298 ,  H05K1/0306 ,  H05K1/115 ,  H05K1/185 ,  H05K3/4688 ,  H05K2201/017 ,  H05K2203/1469 ,  Y10T156/1057 ,  H01L2924/014 ,  H01L2924/00

Abstract: Embodiments of the present description relate to the field of fabricating microelectronic structures. The microelectronic structures may include a glass routing structure formed separately from a trace routing structure, wherein the glass routing structure is incorporated with the trace routing substrate, either in a laminated or embedded configuration. Also disclosed are embodiments of a microelectronic package including at least one microelectronic device disposed proximate to the glass routing structure of the microelectronic substrate and coupled with the microelectronic substrate by a plurality of interconnects. Further, disclosed are embodiments of a microelectronic structure including at least one microelectronic device embedded within a microelectronic encapsulant having a glass routing structure attached to the microelectronic encapsulant and a trace routing structure formed on the glass routing structure.

公开(公告)号：US09312233B2

公开(公告)日：2016-04-12

申请号：US13928796

申请日：2013-06-27

Applicant: Intel Corporation

Inventor： Rahul N. Manepalli ,  Hamid R. Azimi ,  John S. Guzek

IPC: H05K13/04 ,  H01L23/00 ,  H01L23/31 ,  H01L21/56 ,  H05K3/00 ,  H05K3/46

CPC classification number: H01L23/3121 ,  H01L21/561 ,  H01L21/568 ,  H01L23/293 ,  H01L23/3114 ,  H01L23/50 ,  H01L23/528 ,  H01L24/03 ,  H01L24/11 ,  H01L24/14 ,  H01L24/19 ,  H01L24/96 ,  H01L2224/02379 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05548 ,  H01L2224/12105 ,  H01L2224/13023 ,  H01L2224/131 ,  H01L2224/16237 ,  H01L2224/96 ,  H01L2924/0665 ,  H01L2924/12042 ,  H01L2924/1432 ,  H01L2924/1436 ,  H01L2924/181 ,  H01L2924/186 ,  H01L2924/3511 ,  H05K3/0097 ,  H05K3/4679 ,  H05K3/4682 ,  H05K2201/09918 ,  H05K2203/1536 ,  H01L2924/00 ,  H01L2224/11 ,  H01L2224/03 ,  H01L2924/014

Abstract: Methods of forming molded panel coreless package structures are described. Those methods and structures may include fabrication of embedded die packages using large panel format and use of molding to improve rigidity of the panel, as well as to embed the die in a non-sacrificial mold material. The methods and structures described include methods for manufacturing thin, coreless substrate architectures which possess low warpage.

Abstract translation: 描述形成模制板无芯封装结构的方法。 这些方法和结构可以包括使用大面板格式制造嵌入式模具封装并使用模制来提高面板的刚度，以及将模具嵌入非牺牲模具材料中。 所描述的方法和结构包括制造具有低翘曲的薄的无芯基板结构的方法。

公开(公告)号：US20150163904A1

公开(公告)日：2015-06-11

申请号：US14102757

申请日：2013-12-11

Applicant: Intel Corporation

Inventor： Omkar G. Karhade ,  John S. Guzek ,  Johanna M. Swan ,  Christopher J. Nelson ,  Nitin A. Deshpande ,  William J. Lambert ,  Charles A. Gealer ,  Feras Eid ,  Islam A. Salama ,  Kemal Aygun ,  Sasha N. Oster ,  Tyler N. Osborn

IPC: H05K1/11 ,  H05K1/18 ,  H05K3/40 ,  G06F1/18

CPC classification number: H01L25/16 ,  H01L23/5383 ,  H01L23/5386 ,  H01L23/5387 ,  H01L24/50 ,  H01L24/86 ,  H01L25/00 ,  H01L25/0655 ,  H01L2224/0405 ,  H01L2224/04105 ,  H01L2224/05568 ,  H01L2224/056 ,  H01L2224/05647 ,  H01L2224/29078 ,  H01L2224/86203 ,  H01L2224/86815 ,  H05K1/185 ,  Y10T29/49155 ,  H01L2924/00014 ,  H01L2924/014

Abstract: A microelectronic package of the present description may comprises a first microelectronic device having at least one row of connection structures electrically connected thereto and a second microelectronic device having at least one row of connection structures electrically connected thereto, wherein the connection structures within the at least one first microelectronic device row are aligned with corresponding connection structures within the at least one second microelectronic device row in an x-direction. An interconnect comprising an interconnect substrate having a plurality of electrically isolated conductive traces extending in the x-direction on a first surface of the interconnect substrate may be attached to the at least one first microelectronic device connection structure row and the at least one second microelectronic device connection structure row, such that at least one interconnect conductive trace forms a connection between a first microelectronic device connection structure and its corresponding second microelectronic device connection structure.

Abstract translation: 本说明书的微电子封装可以包括具有与其电连接的至少一行连接结构的第一微电子器件和具有与其电连接的至少一排连接结构的第二微电子器件，其中所述至少一个 第一微电子器件行与X方向上的至少一个第二微电子器件行内的对应连接结构对准。 包括具有在互连衬底的第一表面上沿x方向延伸的多个电隔离导电迹线的互连衬底的互连可以附接到所述至少一个第一微电子器件连接结构行和所述至少一个第二微电子器件 连接结构行，使得至少一个互连导电迹线形成第一微电子器件连接结构与其对应的第二微电子器件连接结构之间的连接。