公开(公告)号：US20130299983A1

公开(公告)日：2013-11-14

申请号：US13945392

申请日：2013-07-18

Applicant: Micron Technology Inc.

Inventor： Alan G. Wood ,  David R. Hembree

IPC: H01L23/00 ,  H01L23/48

CPC classification number: H01L23/02 ,  B33Y70/00 ,  H01L21/6835 ,  H01L23/3114 ,  H01L23/48 ,  H01L23/481 ,  H01L23/49827 ,  H01L24/10 ,  H01L24/11 ,  H01L24/13 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/78 ,  H01L24/85 ,  H01L25/0657 ,  H01L2221/6834 ,  H01L2224/02333 ,  H01L2224/02335 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/11 ,  H01L2224/1134 ,  H01L2224/13 ,  H01L2224/13024 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/4554 ,  H01L2224/45565 ,  H01L2224/48091 ,  H01L2224/4813 ,  H01L2224/48145 ,  H01L2224/4824 ,  H01L2224/48471 ,  H01L2224/48475 ,  H01L2224/48599 ,  H01L2224/48699 ,  H01L2224/48992 ,  H01L2224/49429 ,  H01L2224/78301 ,  H01L2224/85001 ,  H01L2224/85045 ,  H01L2224/85051 ,  H01L2224/85121 ,  H01L2224/85205 ,  H01L2224/85444 ,  H01L2224/85951 ,  H01L2225/06506 ,  H01L2225/06513 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06596 ,  H01L2924/00015 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/0102 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2924/01043 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/19042 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45644 ,  H01L2924/00 ,  H01L2924/2075 ,  H01L2924/013 ,  H01L2924/00013 ,  H01L2924/00012

Abstract: A through wire interconnect for a semiconductor substrate includes a via extending through the semiconductor substrate from the first side to the second side thereof; a wire in the via having a first end with a bonded connection to the substrate contact and a second end proximate to the second side of the semiconductor substrate; a dielectric material in the via configured to electrically insulate the wire from the semiconductor substrate; a bonding member bonded to the first end of the wire and to the substrate contact configured to secure the wire to the substrate contact; and a contact on the second end of the wire.

Abstract translation: 用于半导体衬底的通线互连包括从第一侧延伸穿过半导体衬底到第二侧的通孔; 所述通孔中的导线具有第一端，所述第一端具有与所述衬底接触的接合连接，以及靠近所述半导体衬底的第二侧的第二端; 所述通孔中的电介质材料被配置为使所述导线与所述半导体衬底电绝缘; 接合构件，其接合到所述导线的所述第一端和所述衬底接触件，被配置为将所述导线固定到所述衬底接触件; 和电线第二端的触点。

公开(公告)号：US10121738B2

公开(公告)日：2018-11-06

申请号：US15407205

申请日：2017-01-16

Applicant: Micron Technology, Inc.

Inventor： Alan G. Wood ,  Philip J. Ireland

IPC: H01L23/522 ,  H01L23/528 ,  H01L21/768

Abstract: Some embodiments include methods of forming interconnects through semiconductor substrates. An opening may be formed to extend partway through a semiconductor substrate, and part of an interconnect may be formed within the opening. Another opening may be formed to extend from a second side of the substrate to the first part of the interconnect, and another part of the interconnect may be formed within such opening. Some embodiments include semiconductor constructions having a first part of a through-substrate interconnect extending partially through a semiconductor substrate from a first side of the substrate; and having a second part of the through-substrate interconnect extending from a second side of the substrate and having multiple separate electrically conductive fingers that all extend to the first part of the interconnect.

公开(公告)号：US09018751B2

公开(公告)日：2015-04-28

申请号：US14257114

申请日：2014-04-21

Applicant: Micron Technology, Inc.

Inventor： David R Hembree ,  Alan G. Wood

IPC: H01L23/04 ,  H01L23/00 ,  G01R1/067 ,  H01L21/48 ,  H01L21/56 ,  H01L21/768 ,  H01L23/48 ,  H01L23/498 ,  H01L25/065 ,  H01L25/10 ,  G01R1/073

CPC classification number: H01L24/16 ,  G01R1/06716 ,  G01R1/07307 ,  H01L21/486 ,  H01L21/565 ,  H01L21/568 ,  H01L21/76877 ,  H01L21/76885 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/49827 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/45 ,  H01L24/48 ,  H01L24/78 ,  H01L24/81 ,  H01L24/85 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/02125 ,  H01L2224/0233 ,  H01L2224/02333 ,  H01L2224/02335 ,  H01L2224/02372 ,  H01L2224/02373 ,  H01L2224/02375 ,  H01L2224/0333 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05548 ,  H01L2224/05552 ,  H01L2224/05554 ,  H01L2224/05555 ,  H01L2224/05567 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/06181 ,  H01L2224/1134 ,  H01L2224/13009 ,  H01L2224/13024 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/16146 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/451 ,  H01L2224/45116 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45655 ,  H01L2224/45684 ,  H01L2224/45698 ,  H01L2224/48091 ,  H01L2224/4813 ,  H01L2224/48145 ,  H01L2224/48455 ,  H01L2224/48463 ,  H01L2224/4847 ,  H01L2224/48471 ,  H01L2224/48475 ,  H01L2224/48624 ,  H01L2224/48647 ,  H01L2224/48724 ,  H01L2224/48747 ,  H01L2224/48824 ,  H01L2224/48847 ,  H01L2224/4899 ,  H01L2224/48992 ,  H01L2224/78301 ,  H01L2224/85051 ,  H01L2224/85201 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85951 ,  H01L2225/06506 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06562 ,  H01L2225/1058 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01088 ,  H01L2924/014 ,  H01L2924/07811 ,  H01L2924/10155 ,  H01L2924/10161 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45164 ,  H01L2924/013 ,  H01L2924/00013

Abstract: A semiconductor module system includes a module substrate and a semiconductor substrate having a through wire interconnect bonded to an electrode on the module substrate. The through wire interconnect includes a via, a wire in the via having a first end bonded to a substrate contact on the semiconductor substrate and a polymer layer at least partially encapsulating the wire. The semiconductor module system can also include a second substrate stacked on the semiconductor substrate having a second through wire interconnect in electrical contact with the through wire interconnect.

Abstract translation: 半导体模块系统包括模块基板和具有结合到模块基板上的电极的通孔互连的半导体基板。 通线互连包括通孔，通孔中的导线具有接合到半导体衬底上的衬底接触的第一端和至少部分地封装线的聚合物层。 半导体模块系统还可以包括堆叠在半导体衬底上的第二衬底，其具有与通孔互连电接触的第二通孔互连。

公开(公告)号：US20130295766A1

公开(公告)日：2013-11-07

申请号：US13940034

申请日：2013-07-11

Applicant: Micron Technology, Inc.

Inventor： Salman Akram ,  Charles M. Watkins ,  William M. Hiatt ,  David R. Hembree ,  James M. Wark ,  Warren M. Farnworth ,  Mark E. Tuttle ,  Sidney B. Rigg ,  Steven D. Oliver ,  Kyle K. Kirby ,  Alan G. Wood ,  Lu Velicky

IPC: H01L21/768

CPC classification number: H01L21/76877 ,  H01L21/6835 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/45 ,  H01L27/14634 ,  H01L27/14636 ,  H01L2221/6834 ,  H01L2224/02166 ,  H01L2224/0554 ,  H01L2224/05567 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: A through-wafer interconnect for imager, memory and other integrated circuit applications is disclosed, thereby eliminating the need for wire bonding, making devices incorporating such interconnects stackable and enabling wafer level packaging for imager devices. Further, a smaller and more reliable die package is achieved and circuit parasitics (e.g., L and R) are reduced due to the reduced signal path lengths.

Abstract translation: 公开了一种用于成像器，存储器和其他集成电路应用的透晶片互连，从而消除了对引线接合的需要，使得结合这种互连的器件可堆叠并且实现成像器件的晶片级封装。 此外，实现了更小且更可靠的管芯封装，并且由于信号路径长度的减小，电路寄生（例如，L和R）被减小。