公开(公告)号：US20140038406A1

公开(公告)日：2014-02-06

申请号：US14050535

申请日：2013-10-10

Applicant: Micron Technology, Inc.

Inventor： David R Hembree ,  Alan G. Wood

IPC: H01L21/768

CPC classification number: H01L24/16 ,  G01R1/06716 ,  G01R1/07307 ,  H01L21/486 ,  H01L21/565 ,  H01L21/568 ,  H01L21/76877 ,  H01L21/76885 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/49827 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/45 ,  H01L24/48 ,  H01L24/78 ,  H01L24/81 ,  H01L24/85 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/02125 ,  H01L2224/0233 ,  H01L2224/02333 ,  H01L2224/02335 ,  H01L2224/02372 ,  H01L2224/02373 ,  H01L2224/02375 ,  H01L2224/0333 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05548 ,  H01L2224/05552 ,  H01L2224/05554 ,  H01L2224/05555 ,  H01L2224/05567 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/06181 ,  H01L2224/1134 ,  H01L2224/13009 ,  H01L2224/13024 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/16146 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/451 ,  H01L2224/45116 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45655 ,  H01L2224/45684 ,  H01L2224/45698 ,  H01L2224/48091 ,  H01L2224/4813 ,  H01L2224/48145 ,  H01L2224/48455 ,  H01L2224/48463 ,  H01L2224/4847 ,  H01L2224/48471 ,  H01L2224/48475 ,  H01L2224/48624 ,  H01L2224/48647 ,  H01L2224/48724 ,  H01L2224/48747 ,  H01L2224/48824 ,  H01L2224/48847 ,  H01L2224/4899 ,  H01L2224/48992 ,  H01L2224/78301 ,  H01L2224/85051 ,  H01L2224/85201 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85951 ,  H01L2225/06506 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06562 ,  H01L2225/1058 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01088 ,  H01L2924/014 ,  H01L2924/07811 ,  H01L2924/10155 ,  H01L2924/10161 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45164 ,  H01L2924/013 ,  H01L2924/00013

Abstract: A method for fabricating a through wire interconnect for a semiconductor substrate having a substrate contact includes the steps of: forming a via through the semiconductor substrate from a first side to a second side thereof; placing a wire in the via having a first end with a bonded connection to the substrate contact and a second end proximate to the second side; forming a first contact on the wire proximate to the first side; forming a second contact on the second end of the wire; and forming a polymer layer on the first side at least partially encapsulating the wire while leaving the first contact exposed.

Abstract translation: 一种用于制造具有衬底接触的半导体衬底的通孔布线的方法包括以下步骤：从第一侧至第二侧从半导体衬底形成通孔; 将导线放置在所述通孔中，所述通孔具有第一端，所述第一端具有与所述基板接触件的接合连接和靠近所述第二侧的第二端; 在靠近第一侧的导线上形成第一触点; 在所述电线的第二端上形成第二触点; 以及在所述第一侧上形成聚合物层，至少部分地包封所述导线，同时使所述第一接触体露出。

公开(公告)号：US08581387B1

公开(公告)日：2013-11-12

申请号：US13771440

申请日：2013-02-20

Applicant: Micron Technology, Inc.

Inventor： David R. Hembree ,  Alan G. Wood

IPC: H01L23/04

CPC classification number: H01L24/16 ,  G01R1/06716 ,  G01R1/07307 ,  H01L21/486 ,  H01L21/565 ,  H01L21/568 ,  H01L21/76877 ,  H01L21/76885 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/49827 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/45 ,  H01L24/48 ,  H01L24/78 ,  H01L24/81 ,  H01L24/85 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/02125 ,  H01L2224/0233 ,  H01L2224/02333 ,  H01L2224/02335 ,  H01L2224/02372 ,  H01L2224/02373 ,  H01L2224/02375 ,  H01L2224/0333 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05548 ,  H01L2224/05552 ,  H01L2224/05554 ,  H01L2224/05555 ,  H01L2224/05567 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/06181 ,  H01L2224/1134 ,  H01L2224/13009 ,  H01L2224/13024 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/16146 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/451 ,  H01L2224/45116 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45655 ,  H01L2224/45684 ,  H01L2224/45698 ,  H01L2224/48091 ,  H01L2224/4813 ,  H01L2224/48145 ,  H01L2224/48455 ,  H01L2224/48463 ,  H01L2224/4847 ,  H01L2224/48471 ,  H01L2224/48475 ,  H01L2224/48624 ,  H01L2224/48647 ,  H01L2224/48724 ,  H01L2224/48747 ,  H01L2224/48824 ,  H01L2224/48847 ,  H01L2224/4899 ,  H01L2224/48992 ,  H01L2224/78301 ,  H01L2224/85051 ,  H01L2224/85201 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85951 ,  H01L2225/06506 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06562 ,  H01L2225/1058 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01088 ,  H01L2924/014 ,  H01L2924/07811 ,  H01L2924/10155 ,  H01L2924/10161 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45164 ,  H01L2924/013 ,  H01L2924/00013

Abstract: A through wire interconnect for a semiconductor substrate includes a via extending through the semiconductor substrate from a first side to a second side thereof, and a wire in the via electrically insulated from the semiconductor substrate having a first end with a bonded connection to the substrate contact and a second end proximate to the second side of the semiconductor substrate. The through wire interconnect also includes a first contact on the wire proximate to the first side of the semiconductor substrate, a second contact on the second end of the wire, and a polymer layer on the first side at least partially encapsulating the wire while leaving the first contact exposed. The through wire interconnect can also include a bonding member bonded to the first end of the wire and to the substrate contact having a tip portion forming the first contact.

Abstract translation: 用于半导体衬底的通线互连包括从第一侧延伸穿过半导体衬底到第二侧的通孔以及与半导体衬底电绝缘的通孔中的导线，该第一端具有与衬底接触的接合连接 以及靠近半导体衬底的第二侧的第二端。 通线互连还包括靠近半导体衬底的第一侧的导线上的第一接触件，线的第二端上的第二接触件和第一侧上的至少部分地封装电线的聚合物层，同时留下 第一接触暴露。 通线互连还可以包括接合到线的第一端的接合构件和具有形成第一接触的尖端部分的衬底接触。

公开(公告)号：US20140225259A1

公开(公告)日：2014-08-14

申请号：US14257114

申请日：2014-04-21

Applicant: Micron Technology, Inc.

Inventor： David R Hembree ,  Alan G. Wood

IPC: H01L23/48 ,  H01L21/768 ,  H01L23/00

CPC classification number: H01L24/16 ,  G01R1/06716 ,  G01R1/07307 ,  H01L21/486 ,  H01L21/565 ,  H01L21/568 ,  H01L21/76877 ,  H01L21/76885 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/49827 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/45 ,  H01L24/48 ,  H01L24/78 ,  H01L24/81 ,  H01L24/85 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/02125 ,  H01L2224/0233 ,  H01L2224/02333 ,  H01L2224/02335 ,  H01L2224/02372 ,  H01L2224/02373 ,  H01L2224/02375 ,  H01L2224/0333 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05548 ,  H01L2224/05552 ,  H01L2224/05554 ,  H01L2224/05555 ,  H01L2224/05567 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/06181 ,  H01L2224/1134 ,  H01L2224/13009 ,  H01L2224/13024 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/16146 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/451 ,  H01L2224/45116 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45655 ,  H01L2224/45684 ,  H01L2224/45698 ,  H01L2224/48091 ,  H01L2224/4813 ,  H01L2224/48145 ,  H01L2224/48455 ,  H01L2224/48463 ,  H01L2224/4847 ,  H01L2224/48471 ,  H01L2224/48475 ,  H01L2224/48624 ,  H01L2224/48647 ,  H01L2224/48724 ,  H01L2224/48747 ,  H01L2224/48824 ,  H01L2224/48847 ,  H01L2224/4899 ,  H01L2224/48992 ,  H01L2224/78301 ,  H01L2224/85051 ,  H01L2224/85201 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85951 ,  H01L2225/06506 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06562 ,  H01L2225/1058 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01088 ,  H01L2924/014 ,  H01L2924/07811 ,  H01L2924/10155 ,  H01L2924/10161 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45164 ,  H01L2924/013 ,  H01L2924/00013

Abstract: A semiconductor module system includes a module substrate and a semiconductor substrate having a through wire interconnect bonded to an electrode on the module substrate. The through wire interconnect includes a via, a wire in the via having a first end bonded to a substrate contact on the semiconductor substrate and a polymer layer at least partially encapsulating the wire. The semiconductor module system can also include a second substrate stacked on the semiconductor substrate having a second through wire interconnect in electrical contact with the through wire interconnect.

Abstract translation: 半导体模块系统包括模块基板和具有结合到模块基板上的电极的通孔互连的半导体基板。 通线互连包括通孔，通孔中的导线具有接合到半导体衬底上的衬底接触的第一端和至少部分地封装线的聚合物层。 半导体模块系统还可以包括堆叠在半导体衬底上的第二衬底，其具有与通孔互连电接触的第二通孔互连。

公开(公告)号：US08741667B2

公开(公告)日：2014-06-03

申请号：US14050535

申请日：2013-10-10

Applicant: Micron Technology, Inc.

Inventor： David R Hembree ,  Alan G. Wood

IPC: H01L21/60

CPC classification number: H01L24/16 ,  G01R1/06716 ,  G01R1/07307 ,  H01L21/486 ,  H01L21/565 ,  H01L21/568 ,  H01L21/76877 ,  H01L21/76885 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/49827 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/45 ,  H01L24/48 ,  H01L24/78 ,  H01L24/81 ,  H01L24/85 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/02125 ,  H01L2224/0233 ,  H01L2224/02333 ,  H01L2224/02335 ,  H01L2224/02372 ,  H01L2224/02373 ,  H01L2224/02375 ,  H01L2224/0333 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05548 ,  H01L2224/05552 ,  H01L2224/05554 ,  H01L2224/05555 ,  H01L2224/05567 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/06181 ,  H01L2224/1134 ,  H01L2224/13009 ,  H01L2224/13024 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/16146 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/451 ,  H01L2224/45116 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45655 ,  H01L2224/45684 ,  H01L2224/45698 ,  H01L2224/48091 ,  H01L2224/4813 ,  H01L2224/48145 ,  H01L2224/48455 ,  H01L2224/48463 ,  H01L2224/4847 ,  H01L2224/48471 ,  H01L2224/48475 ,  H01L2224/48624 ,  H01L2224/48647 ,  H01L2224/48724 ,  H01L2224/48747 ,  H01L2224/48824 ,  H01L2224/48847 ,  H01L2224/4899 ,  H01L2224/48992 ,  H01L2224/78301 ,  H01L2224/85051 ,  H01L2224/85201 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85951 ,  H01L2225/06506 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06562 ,  H01L2225/1058 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01088 ,  H01L2924/014 ,  H01L2924/07811 ,  H01L2924/10155 ,  H01L2924/10161 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45164 ,  H01L2924/013 ,  H01L2924/00013

Abstract: A method for fabricating a through wire interconnect for a semiconductor substrate having a substrate contact includes the steps of: forming a via through the semiconductor substrate from a first side to a second side thereof; placing a wire in the via having a first end with a bonded connection to the substrate contact and a second end proximate to the second side; forming a first contact on the wire proximate to the first side; forming a second contact on the second end of the wire; and forming a polymer layer on the first side at least partially encapsulating the wire while leaving the first contact exposed.

Abstract translation: 一种用于制造具有衬底接触的半导体衬底的通孔布线的方法包括以下步骤：从第一侧至第二侧从半导体衬底形成通孔; 将导线放置在所述通孔中，所述通孔具有第一端，所述第一端具有与所述基板接触件的接合连接和靠近所述第二侧的第二端; 在靠近第一侧的导线上形成第一触点; 在所述电线的第二端上形成第二触点; 以及在所述第一侧上形成聚合物层，至少部分地包封所述导线，同时使所述第一接触体露出。

公开(公告)号：US20130323909A1

公开(公告)日：2013-12-05

申请号：US13960855

申请日：2013-08-07

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Alan G. Wood ,  Tim Corbett

IPC: H01L21/22

CPC classification number: H01L21/22 ,  H01L21/268 ,  H01L21/3221 ,  H01L21/78 ,  H01L23/562 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for fabricating semiconductor components includes the steps of providing a semiconductor substrate having a circuit side, a back side and integrated circuits and circuitry on the circuit side; thinning the substrate from the back side to a selected thickness to form a thinned substrate; applying a dopant to the back side of the thinned substrate; and laser processing the back side of the thinned substrate to form a plurality of patterns of lasered features containing the dopant. The dopant can be selected to modify properties of the semiconductor substrate such as carrier properties, gettering properties, mechanical properties or visual properties.

Abstract translation: 一种制造半导体元件的方法包括以下步骤：在电路侧提供具有电路侧，背面和集成电路和电路的半导体衬底; 将基板从背面变薄至选定的厚度以形成薄的基板; 将掺杂剂施加到所述薄化基板的背面; 以及激光处理所述薄化衬底的背面以形成包含所述掺杂剂的多个激光特征图案。 可以选择掺杂剂来改善半导体衬底的性质，例如载体性质，吸气性能，机械性能或视觉性能。

公开(公告)号：US20170125342A1

公开(公告)日：2017-05-04

申请号：US15407205

申请日：2017-01-16

Applicant: Micron Technology, Inc.

Inventor： Alan G. Wood ,  Philip J. Ireland

IPC: H01L23/522 ,  H01L21/768 ,  H01L23/528

CPC classification number: H01L23/5226 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/5283 ,  H01L24/03 ,  H01L24/05 ,  H01L2224/03444 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/0347 ,  H01L2224/0348 ,  H01L2224/03845 ,  H01L2224/05009 ,  H01L2224/05022 ,  H01L2224/05025 ,  H01L2224/05026 ,  H01L2224/05027 ,  H01L2224/05083 ,  H01L2224/05094 ,  H01L2224/05096 ,  H01L2224/05147 ,  H01L2224/05157 ,  H01L2224/05176 ,  H01L2224/05181 ,  H01L2224/05187 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2924/04953 ,  H01L2924/0496 ,  H01L2924/01074 ,  H01L2924/04941

Abstract: Some embodiments include methods of forming interconnects through semiconductor substrates. An opening may be formed to extend partway through a semiconductor substrate, and part of an interconnect may be formed within the opening. Another opening may be formed to extend from a second side of the substrate to the first part of the interconnect, and another part of the interconnect may be formed within such opening. Some embodiments include semiconductor constructions having a first part of a through-substrate interconnect extending partially through a semiconductor substrate from a first side of the substrate; and having a second part of the through-substrate interconnect extending from a second side of the substrate and having multiple separate electrically conductive fingers that all extend to the first part of the interconnect.

公开(公告)号：US09583419B2

公开(公告)日：2017-02-28

申请号：US14505925

申请日：2014-10-03

Applicant: Micron Technology, Inc.

Inventor： Alan G. Wood ,  Philip J. Ireland

IPC: H01L23/48 ,  H01L21/768 ,  H01L23/00

CPC classification number: H01L23/5226 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/5283 ,  H01L24/03 ,  H01L24/05 ,  H01L2224/03444 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/0347 ,  H01L2224/0348 ,  H01L2224/03845 ,  H01L2224/05009 ,  H01L2224/05022 ,  H01L2224/05025 ,  H01L2224/05026 ,  H01L2224/05027 ,  H01L2224/05083 ,  H01L2224/05094 ,  H01L2224/05096 ,  H01L2224/05147 ,  H01L2224/05157 ,  H01L2224/05176 ,  H01L2224/05181 ,  H01L2224/05187 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2924/04953 ,  H01L2924/0496 ,  H01L2924/01074 ,  H01L2924/04941

Abstract: Some embodiments include methods of forming interconnects through semiconductor substrates. An opening may be formed to extend partway through a semiconductor substrate, and part of an interconnect may be formed within the opening. Another opening may be formed to extend from a second side of the substrate to the first part of the interconnect, and another part of the interconnect may be formed within such opening. Some embodiments include semiconductor constructions having a first part of a through-substrate interconnect extending partially through a semiconductor substrate from a first side of the substrate; and having a second part of the through-substrate interconnect extending from a second side of the substrate and having multiple separate electrically conductive fingers that all extend to the first part of the interconnect.

Abstract translation: 一些实施例包括通过半导体衬底形成互连的方法。 可以形成开口以在半导体衬底的中途延伸，并且可以在开口内形成一部分互连。 另一个开口可以形成为从基板的第二侧延伸到互连的第一部分，并且互连的另一部分可以形成在该开口内。 一些实施例包括半导体结构，其具有从衬底的第一侧部分延伸穿过半导体衬底的穿透衬底互连件的第一部分; 并且具有从所述衬底的第二侧延伸的所述贯通衬底互连件的第二部分，并且具有全部延伸到所述互连件的第一部分的多个分离的导电指状物。

公开(公告)号：US20150130029A1

公开(公告)日：2015-05-14

申请号：US14505925

申请日：2014-10-03

Applicant: Micron Technology, Inc.

Inventor： Alan G. Wood ,  Philip J. Ireland

IPC: H01L23/48

CPC classification number: H01L23/5226 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/5283 ,  H01L24/03 ,  H01L24/05 ,  H01L2224/03444 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/0347 ,  H01L2224/0348 ,  H01L2224/03845 ,  H01L2224/05009 ,  H01L2224/05022 ,  H01L2224/05025 ,  H01L2224/05026 ,  H01L2224/05027 ,  H01L2224/05083 ,  H01L2224/05094 ,  H01L2224/05096 ,  H01L2224/05147 ,  H01L2224/05157 ,  H01L2224/05176 ,  H01L2224/05181 ,  H01L2224/05187 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2924/04953 ,  H01L2924/0496 ,  H01L2924/01074 ,  H01L2924/04941

Abstract: Some embodiments include methods of forming interconnects through semiconductor substrates. An opening may be formed to extend partway through a semiconductor substrate, and part of an interconnect may be formed within the opening. Another opening may be formed to extend from a second side of the substrate to the first part of the interconnect, and another part of the interconnect may be formed within such opening. Some embodiments include semiconductor constructions having a first part of a through-substrate interconnect extending partially through a semiconductor substrate from a first side of the substrate; and having a second part of the through-substrate interconnect extending from a second side of the substrate and having multiple separate electrically conductive fingers that all extend to the first part of the interconnect.

Abstract translation: 一些实施例包括通过半导体衬底形成互连的方法。 可以形成开口以在半导体衬底的中途延伸，并且可以在开口内形成一部分互连。 另一个开口可以形成为从基板的第二侧延伸到互连的第一部分，并且互连的另一部分可以形成在该开口内。 一些实施例包括半导体结构，其具有从衬底的第一侧部分延伸穿过半导体衬底的穿透衬底互连件的第一部分; 并且具有从所述衬底的第二侧延伸的所述贯通衬底互连件的第二部分，并且具有全部延伸到所述互连件的第一部分的多个分离的导电指状物。

公开(公告)号：US08728921B2

公开(公告)日：2014-05-20

申请号：US13960855

申请日：2013-08-07

Applicant: Micron Technology, Inc.

Inventor： Alan G. Wood ,  Tim Corbett

IPC: H01L21/26

CPC classification number: H01L21/22 ,  H01L21/268 ,  H01L21/3221 ,  H01L21/78 ,  H01L23/562 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for fabricating semiconductor components includes the steps of providing a semiconductor substrate having a circuit side, a back side and integrated circuits and circuitry on the circuit side; thinning the substrate from the back side to a selected thickness to form a thinned substrate; applying a dopant to the back side of the thinned substrate; and laser processing the back side of the thinned substrate to form a plurality of patterns of lasered features containing the dopant. The dopant can be selected to modify properties of the semiconductor substrate such as carrier properties, gettering properties, mechanical properties or visual properties.

Abstract translation: 一种制造半导体元件的方法包括以下步骤：在电路侧提供具有电路侧，背面和集成电路和电路的半导体衬底; 将基板从背面变薄至选定的厚度以形成薄的基板; 将掺杂剂施加到所述薄化基板的背面; 以及激光处理所述薄化衬底的背面以形成包含所述掺杂剂的多个激光特征图案。 可以选择掺杂剂来改善半导体衬底的性质，例如载体性质，吸气性能，机械性能或视觉性能。

公开(公告)号：US08669179B2

公开(公告)日：2014-03-11

申请号：US13940034

申请日：2013-07-11

Applicant: Micron Technology, Inc.

Inventor： Salman Akram ,  Charles M. Watkins ,  William M. Hiatt ,  David R. Hembree ,  James M. Wark ,  Warren M. Farnworth ,  Mark E. Tuttle ,  Sidney B. Rigg ,  Steven D. Oliver ,  Kyle K. Kirby ,  Alan G. Wood ,  Lu Velicky

IPC: H01L21/4763

CPC classification number: H01L21/76877 ,  H01L21/6835 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/45 ,  H01L27/14634 ,  H01L27/14636 ,  H01L2221/6834 ,  H01L2224/02166 ,  H01L2224/0554 ,  H01L2224/05567 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: A through-wafer interconnect for imager, memory and other integrated circuit applications is disclosed, thereby eliminating the need for wire bonding, making devices incorporating such interconnects stackable and enabling wafer level packaging for imager devices. Further, a smaller and more reliable die package is achieved and circuit parasitics (e.g., L and R) are reduced due to the reduced signal path lengths.

Abstract translation: 公开了一种用于成像器，存储器和其他集成电路应用的透晶片互连，从而消除了对引线接合的需要，使得结合这种互连的器件可堆叠并且实现成像器件的晶片级封装。 此外，实现了更小且更可靠的管芯封装，并且由于信号路径长度的减小，电路寄生（例如，L和R）被减小。