SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME

    公开(公告)号:US20190214555A1

    公开(公告)日:2019-07-11

    申请号:US16208544

    申请日:2018-12-03

    Applicant: ROHM CO., LTD.

    CPC classification number: H01L43/14 H01L43/04 H01L43/065

    Abstract: A semiconductor device includes a substrate having a front surface and a mounting surface that are separate from each other in a thickness direction. The substrate is formed with a through-hole that penetrates through in the thickness direction. A semiconductor element is mounted on the front surface of the substrate, and a front-surface wire line is formed on the front surface of the substrate to be electrically connected to the semiconductor element. A column is provided inside the through-hole, and is electrically connected to the front-surface wiring line. An electrode pad is provided on the mounting surface of the substrate, and is electrically connected to the column. A resin-layer through portion is also provided inside the through-hole. The semiconductor element is covered with a sealing resin. The resin-layer through portion has an orthogonal surface in contact with the column. The orthogonal surface is orthogonal to the mounting surface.

    THERMAL PRINT HEAD
    12.
    发明申请
    THERMAL PRINT HEAD 审中-公开

    公开(公告)号:US20180009232A1

    公开(公告)日:2018-01-11

    申请号:US15710360

    申请日:2017-09-20

    Applicant: Rohm Co., Ltd.

    Abstract: A thermal print head includes a semiconductor substrate, a resistor layer with heat generating portions arranged in the main scanning direction, a wiring layer included in a conduction path for energizing the heat generating portions, and a protective layer covering the resistor layer and the wiring layer. The semiconductor substrate includes a projection protruding from the obverse surface of the substrate and elongated in the main scanning direction. The projection has first and second inclined side surfaces spaced apart from each other in the sub-scanning direction. The heat generating portions are arranged to overlap with the first inclined side surface of the projection as viewed in plan view.

    THERMAL PRINT HEAD
    14.
    发明申请

    公开(公告)号:US20170182795A1

    公开(公告)日:2017-06-29

    申请号:US15390141

    申请日:2016-12-23

    Applicant: Rohm Co., Ltd.

    Abstract: A thermal print head includes a semiconductor substrate, a resistor layer with heat generating portions arranged in the main scanning direction, a wiring layer included in a conduction path for energizing the heat generating portions, and a protective layer covering the resistor layer and the wiring layer. The semiconductor substrate includes a projection protruding from the obverse surface of the substrate and elongated in the main scanning direction. The projection has first and second inclined side surfaces spaced apart from each other in the sub-scanning direction. The heat generating portions are arranged to overlap with the first inclined side surface of the projection as viewed in plan view.

    SEMICONDUCTOR LIGHT-EMITTING DEVICE
    15.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
    半导体发光器件

    公开(公告)号:US20160336489A1

    公开(公告)日:2016-11-17

    申请号:US15139006

    申请日:2016-04-26

    Applicant: ROHM CO., LTD.

    Abstract: A semiconductor light-emitting device includes a substrate, an LED chip, a control element, a conductive layer and an insulating layer. The substrate, made of a semiconductor material, has an obverse surface and a reverse surface spaced apart from each other in the thickness direction of the substrate. The control element controls light emission of the LED chip. The conductive layer is electrically connected to the LED chip and the control element. The insulating layer is arranged between at least apart of the conductive layer and the substrate. The substrate has a recess formed in the obverse surface, and the LED chip is housed in the recess. The control element is arranged between the LED chip and the reverse surface in the thickness direction of the substrate.

    Abstract translation: 半导体发光器件包括衬底,LED芯片,控制元件,导电层和绝缘层。 由半导体材料制成的衬底具有在衬底的厚度方向上彼此间隔开的正面和反面。 控制元件控制LED芯片的发光。 导电层电连接到LED芯片和控制元件。 绝缘层布置在导电层的至少一部分和基板之间。 基板具有形成在正面的凹部,LED芯片容纳在凹部中。 控制元件布置在基板的厚度方向上的LED芯片和反面之间。

    ELECTRONIC DEVICE
    16.
    发明申请
    ELECTRONIC DEVICE 有权
    电子设备

    公开(公告)号:US20160242292A1

    公开(公告)日:2016-08-18

    申请号:US15015870

    申请日:2016-02-04

    Applicant: ROHM CO., LTD.

    Abstract: An electronic device includes a semiconductor substrate, an electronic element mounted on the substrate, a conductive layer electrically connected to the electronic element, a sealing resin and a columnar conductor. The substrate has a recess formed in its obverse surface. The electronic element is mounted on the bottom surface of the recess. The conductive layer has an obverse-surface contacting region located on the obverse surface of the substrate. The sealing resin is disposed in at least a part of the recess for covering at least a part of the obverse surface of the substrate. The columnar conductor is electrically connected to the obverse-surface contacting region of the conductive layer and exposed from the sealing resin at a side opposite to the obverse surface of the substrate.

    Abstract translation: 电子设备包括半导体衬底,安装在衬底上的电子元件,与电子元件电连接的导电层,密封树脂和柱状导体。 基板具有在其正面形成的凹部。 电子元件安装在凹槽的底面上。 导电层具有位于基板的正面上的正面接触区域。 密封树脂设置在用于覆盖基板的正面的至少一部分的凹部的至少一部分中。 柱状导体与导电层的正面接触区域电连接,并且在密封树脂的与基板的正面相反的一侧露出。

    NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20240186382A1

    公开(公告)日:2024-06-06

    申请号:US18522420

    申请日:2023-11-29

    Applicant: ROHM CO., LTD.

    Inventor: Isamu NISHIMURA

    Abstract: The present disclosure provides a nitride semiconductor device. The nitride semiconductor device includes a gate layer formed on an electron supply layer; a first insulating film, formed on the gate layer and having an opening exposing the gate layer; and a gate electrode including a gate field plate portion formed on the first insulating film. A side surface of the first insulating film is located further inside the gate electrode than a side surface of the gate field plate portion. The nitride semiconductor device further includes a second insulating film covering at least side surfaces of each of the gate layer, the first insulating film and the gate electrode. The second insulating film includes a portion embedded in a recessed portion formed by a lower surface of the gate field plate portion, the side surface of the first insulating film and an upper surface of the gate layer.

    COIL MODULE AND ACTUATOR EQUIPPED WITH SAME

    公开(公告)号:US20220157503A1

    公开(公告)日:2022-05-19

    申请号:US17437801

    申请日:2020-03-12

    Applicant: ROHM CO., LTD.

    Abstract: A coil module includes a substrate, a conductor layer, at least one element, and a sealing resin. The substrate includes a semiconductor material. The conductor layer is formed on the substrate and includes a wiring section and a coil section of a helical shape. The at least one element is mounted on the wiring section. The sealing resin covers the obverse surface of the substrate, the conductor layer, and the at least one element. The at least one element includes, for example, a magnetic detection element.

    SEMICONDUCTOR DEVICE
    20.
    发明申请

    公开(公告)号:US20220077124A1

    公开(公告)日:2022-03-10

    申请号:US17454897

    申请日:2021-11-15

    Applicant: ROHM CO., LTD.

    Abstract: A semiconductor device includes a substrate having a main surface, a plurality of first wirings, each having a first embedded part embedded in the substrate and exposed from the main surface, and a mounted part which is in contact with the main surface and is connected to the first embedded part, a semiconductor element having an element rear surface and a plurality of electrodes bonded to the mounted parts, a plurality of second wirings, each having a second embedded part embedded in the substrate and exposed from the main surface and a columnar part protruding from the second embedded part in the thickness direction, and being located outward from the semiconductor element as viewed in the thickness direction; and a passive element located on the side facing the main surface in the thickness direction more than the semiconductor element, and electrically connected to the plurality of second wirings.

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