公开(公告)号：US5350886A

公开(公告)日：1994-09-27

申请号：US659672

申请日：1991-02-25

申请人： Kunio Miyazaki ,  Yutaka Sugita ,  Akio Mukoh ,  Tadahiko Miyoshi ,  Osamu Miura ,  Akio Takahashi ,  Shunichi Numata ,  Satoru Ogihara ,  Kazuji Yamada ,  Hirokazu Inoue ,  Fumiyuki Kobayashi

发明人： Kunio Miyazaki ,  Yutaka Sugita ,  Akio Mukoh ,  Tadahiko Miyoshi ,  Osamu Miura ,  Akio Takahashi ,  Shunichi Numata ,  Satoru Ogihara ,  Kazuji Yamada ,  Hirokazu Inoue ,  Fumiyuki Kobayashi

IPC分类号： H01L23/538 ,  H05K1/03 ,  H05K3/46 ,  H05K1/00

CPC分类号： H01L23/5385 ,  H05K3/462 ,  H05K3/4629 ,  H01L2924/0002 ,  H05K1/0306 ,  H05K2201/0379 ,  H05K2203/061

摘要： An LSI mounting substrate having a multilayered thin film wiring portion, with the thin film wiring portion being divided into wiring units each composed of a plurality of wiring layers, with the wirings between the units being electrically connected through connecting pads defined in the same surface as that of a surface conductive layer of the unit.

摘要翻译： 一种具有多层薄膜布线部分的LSI安装基板，薄膜布线部分被分成多个布线层的布线单元，各单元之间的布线通过与 该单元的表面导电层的那个。

公开(公告)号：US4891831A

公开(公告)日：1990-01-02

申请号：US222615

申请日：1988-07-21

申请人： Akira Tanaka ,  Satoshi Shimada ,  Kazuji Yamada ,  Yusaku Nakagawa ,  Motohisa Nishihara ,  Tadahiko Miyoshi ,  Noboru Baba ,  Hiromi Kagohara ,  Ichiro Inamura

发明人： Akira Tanaka ,  Satoshi Shimada ,  Kazuji Yamada ,  Yusaku Nakagawa ,  Motohisa Nishihara ,  Tadahiko Miyoshi ,  Noboru Baba ,  Hiromi Kagohara ,  Ichiro Inamura

IPC分类号： H01J35/10

CPC分类号： H01J35/108 ,  H01J2235/084

摘要： A method for generating X-rays in an X-ray tube, comprises the steps of: rotating an X-ray target of a rotating anode, the X-ray target having a metal coated layer thereon; applying electron beams emitted from a cathode onto the metal coated layer of the X-ray target; and offsetting thermal deformation of the X-ray target due to the application of the electron beams by deformation of the X-ray target due to centrifugal force, thereby maintaining a position of the X-ray target in a direction of the application of the electron beams, at a room temperature of the X-ray target, thus generating the X-rays.

公开(公告)号：US4550612A

公开(公告)日：1985-11-05

申请号：US615524

申请日：1984-05-31

申请人： Kazuji Yamada ,  Shigeyuki Kobori ,  Satoshi Shimada ,  Ryosaku Kanzawa ,  Ryoichi Kobayashi ,  Hideo Sato

发明人： Kazuji Yamada ,  Shigeyuki Kobori ,  Satoshi Shimada ,  Ryosaku Kanzawa ,  Ryoichi Kobayashi ,  Hideo Sato

IPC分类号： G01L9/04 ,  G01L9/00 ,  H01L29/84 ,  G01L9/06

CPC分类号： H01L29/84 ,  G01L9/0054

摘要： In an integrated pressure sensor, a silicon chip for pressure detection and a substrate for supporting the silicon chip are made of the same material, the silicon chip has a thin diaphragm portion and a peripheral fixed portion thicker than the diaphragm portion, and the silicon chip is bonded to the substrate through a thin insulating film.

摘要翻译： 在集成压力传感器中，用于压力检测的硅芯片和用于支撑硅芯片的基板由相同的材料制成，硅芯片具有薄膜部分和比膜部分厚的周边固定部分，硅芯片 通过薄的绝缘膜与基板结合。

公开(公告)号：US4291293A

公开(公告)日：1981-09-22

申请号：US76813

申请日：1979-09-19

申请人： Kazuji Yamada ,  Seiko Suzuki ,  Motohisa Nishihara ,  Kanji Kawakami ,  Hideo Sato ,  Shigeyuki Kobori ,  Ryosaku Kanzawa ,  Minoru Takahashi ,  Hitoshi Minorikawa

发明人： Kazuji Yamada ,  Seiko Suzuki ,  Motohisa Nishihara ,  Kanji Kawakami ,  Hideo Sato ,  Shigeyuki Kobori ,  Ryosaku Kanzawa ,  Minoru Takahashi ,  Hitoshi Minorikawa

IPC分类号： G01L9/04 ,  G01L9/00 ,  H01L23/08 ,  H01L29/84 ,  G01L1/22

CPC分类号： G01L9/0042 ,  G01L9/0054

摘要： A semiconductor pressure transducer assembly comprising a silicon diaphragm assembly and a glass covering member. The silicon diaphragm assembly has a circular diaphragm portion of thin silicon which is formed using etching, and a thick supporting portion therearound. Piezoresistive elements of a piezoresistive bridge circuit and conducting paths for electrically connection thereof are formed on the silicon diaphragm assembly. On a surface of the silicon diaphragm assembly, a passivating layer of silicon dioxide are formed in uniform thickness, and further on a surface of the passivating layer is formed a layer of polysilicon on the supporting portion of the silicon diaphragm assembly. In the passivating layer, a contacting window is formed, through which the polysilicon layer is electrically connected to the silicon diaphragm assembly. The covering member of borosilicate glass having a circular well is mounted and bonded onto the silicon diaphragm assembly in contact with the polysilicon layer using Anodic Bonding method. And the processed silicon diaphragm assembly has a flat surface thereof, on which the piezoresistive elements and the conducting paths are constructed using Ion Implantation method, or reforming a silicon dioxide layer thereon after removing another silicon dioxide layer used as mask in diffusing process.

摘要翻译： 一种半导体压力传感器组件，包括硅膜组件和玻璃覆盖件。 硅膜组件具有通过蚀刻形成的薄硅的圆形隔膜部分和其周围的厚的支撑部分。 在硅膜组件上形成压阻电桥电路的压阻元件和用于电连接的导电路径。 在硅膜组件的表面上形成均匀厚度的二氧化硅钝化层，并且在钝化层的表面上进一步在硅膜组件的支撑部分上形成多晶硅层。 在钝化层中，形成接触窗，多晶硅层通过该接触窗电连接到硅膜组件。 使用阳极接合方法将具有圆形孔的硼硅酸盐玻璃的覆盖部件安装并接合到与硅多晶硅层接触的硅膜组件上。 并且经处理的硅膜组件具有平坦的表面，在其上使用离子注入方法构建压阻元件和导电路径，或者在去除扩散过程中用作掩模的另一二氧化硅层之后重新形成二氧化硅层。

公开(公告)号：US4173900A

公开(公告)日：1979-11-13

申请号：US883589

申请日：1978-03-06

申请人： Masanori Tanabe ,  Satoshi Shimada ,  Motohisa Nishihara ,  Kazuji Yamada ,  Yasumasa Matsuda ,  Michitaka Shimazoe ,  Yoshitaka Matsuoka ,  Yukio Takahashi ,  Katsuya Katohgi ,  Mitsuo Ai

发明人： Masanori Tanabe ,  Satoshi Shimada ,  Motohisa Nishihara ,  Kazuji Yamada ,  Yasumasa Matsuda ,  Michitaka Shimazoe ,  Yoshitaka Matsuoka ,  Yukio Takahashi ,  Katsuya Katohgi ,  Mitsuo Ai

IPC分类号： G01L9/00 ,  H01L29/84 ,  G01L9/06

CPC分类号： G01L9/0054 ,  H01L29/84

摘要： A semiconductor pressure transducer comprising a disc-shaped pressure-responsive diaphragm; a pair of radial strain gauge units having a piezoresistance effect, formed by injecting an impurity in the radial direction in the surface of the diaphragm; and a pair of tangential strain gauge units having a piezoresistance effect, formed by injecting an impurity in the tangential direction in the surface of the diaphragm, wherein the distance from the pair of the radial strain gauge units to the center of the circular diaphragm is greater than the distance from the pair of the tangential strain gauge units to the center of the circular diaphragm.

摘要翻译： 一种半导体压力传感器，包括盘形压力响应膜片; 一对具有压阻效应的径向应变计单元，其通过在所述隔膜的表面中沿径向注入杂质而形成; 以及具有压阻效应的一对切向应变计单元，其通过在隔膜的表面中沿切线注入杂质形成，其中从一对径向应变计单元到圆形隔膜的中心的距离更大 比从一对切向应变计单元到圆形隔膜中心的距离。

公开(公告)号：US06353258B1

公开(公告)日：2002-03-05

申请号：US09603966

申请日：2000-06-26

申请人： Hirokazu Inoue ,  Ryuichi Saito ,  Mutsuhiro Mori ,  Yasutoshi Kurihara ,  Jin Onuki ,  Shin Kimura ,  Satoshi Shimada ,  Kazuhiro Suzuki ,  Yukio Kamita ,  Isao Kobayashi ,  Kazuji Yamada ,  Naohiro Momma

发明人： Hirokazu Inoue ,  Ryuichi Saito ,  Mutsuhiro Mori ,  Yasutoshi Kurihara ,  Jin Onuki ,  Shin Kimura ,  Satoshi Shimada ,  Kazuhiro Suzuki ,  Yukio Kamita ,  Isao Kobayashi ,  Kazuji Yamada ,  Naohiro Momma

IPC分类号： H01L2334

CPC分类号： H01L23/5386 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L25/072 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/48699 ,  H01L2224/48747 ,  H01L2224/49111 ,  H01L2224/49113 ,  H01L2224/73265 ,  H01L2224/85447 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15747 ,  H01L2924/16151 ,  H01L2924/16315 ,  H01L2924/181 ,  H01L2924/2076 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599

摘要： A semiconductor module has a plurality of power semiconductor devices mounted on a substrate, and a metal foil for wiring is mounted on the substrate so that an asymmetric unit arrangement of the semiconductor devices is formed. In the device, all of the units are arranged in the same direction on the substrate, and all of the units are electrically connected with electrode terminal feet, and the electrode terminal feet are electrically connected with linkage terminal foot. The electrode terminal feet are disposed with a certain interval.

摘要翻译： 半导体模块具有安装在基板上的多个功率半导体器件，并且用于布线的金属箔安装在基板上，从而形成半导体器件的不对称单元布置。 在该装置中，所有单元在基板上沿相同的方向排列，并且所有单元与电极端子脚电连接，并且电极端子脚与联动端子脚电连接。 电极端子脚以一定间隔设置。

公开(公告)号：US06313598B1

公开(公告)日：2001-11-06

申请号：US09463591

申请日：2000-01-28

申请人： Akihiro Tamba ,  Toshio Ogawa ,  Kazuji Yamada

发明人： Akihiro Tamba ,  Toshio Ogawa ,  Kazuji Yamada

IPC分类号： H01L2504

CPC分类号： H01L25/04 ,  H01L23/3107 ,  H01L23/4334 ,  H01L23/49575 ,  H01L25/165 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48137 ,  H01L2924/10253 ,  H01L2924/13055 ,  H01L2924/181 ,  H01L2924/19041 ,  H05K1/144 ,  H05K3/202 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A power semiconductor module comprising a power semiconductor element included in a power circuit portion and mounted on a metal base, a first resin molded to the power semiconductor element, a control circuit element disposed on the first resin and included at least in a portion of the control circuit, and a control terminal connected to the power circuit portion and having an exposed portion thereof in the surface of the first resin, in which a portion of the control circuit is connected with the power circuit portion at the exposed portion of the control terminal. Accordingly, a resin mold type power semiconductor module capable of realizing a high performance of the control circuit portion at low cost can be realized.

摘要翻译： 一种功率半导体模块，包括功率电路部分中的功率半导体元件，其安装在金属基底上，模制到功率半导体元件的第一树脂，设置在第一树脂上的控制电路元件，至少包括 控制电路和连接到电源电路部分的控制端子，并且在第一树脂的表面中具有暴露部分，其中控制电路的一部分与控制端子的暴露部分处的电源电路部分连接 。 因此，可以实现能够以低成本实现控制电路部分的高性能的树脂模具型功率半导体模块。

公开(公告)号：US5956231A

公开(公告)日：1999-09-21

申请号：US539075

申请日：1995-10-04

申请人： Kazuji Yamada ,  Akira Tanaka ,  Ryuichi Saito ,  Yasutoshi Kurihara ,  Tadao Kushima ,  Takashi Haramaki ,  Yoshihiko Koike ,  Takashi Hosokawa ,  Mamoru Sawahata ,  Masahiro Koizumi ,  Jin Onuki ,  Kazuhiro Suzuki ,  Isao Kobayashi ,  Hideo Shimizu ,  Yutaka Higashimura ,  Shigeki Sekine ,  Nobuya Koike ,  Hideya Kokubun

发明人： Kazuji Yamada ,  Akira Tanaka ,  Ryuichi Saito ,  Yasutoshi Kurihara ,  Tadao Kushima ,  Takashi Haramaki ,  Yoshihiko Koike ,  Takashi Hosokawa ,  Mamoru Sawahata ,  Masahiro Koizumi ,  Jin Onuki ,  Kazuhiro Suzuki ,  Isao Kobayashi ,  Hideo Shimizu ,  Yutaka Higashimura ,  Shigeki Sekine ,  Nobuya Koike ,  Hideya Kokubun

IPC分类号： H01L23/049 ,  H01L23/495 ,  H01L25/065 ,  H02M7/00 ,  H05K7/02 ,  H05K7/04

CPC分类号： H01L23/49562 ,  H01L23/049 ,  H01L24/49 ,  H01L25/0655 ,  H01L25/072 ,  H01L25/18 ,  H02M7/003 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/451 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/4943 ,  H01L2224/49431 ,  H01L2224/73265 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01025 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/2076 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3025 ,  H01L2924/351

摘要： A semiconductor device in which a plurality of semiconductor elements are bonded onto at least one electrode pattern on an insulator substrate formed a plurality of electrode patterns on the main surface, each of the electrodes of the semiconductor element being electrically connected to the electrode pattern, the other surface of the insulator substrate being bonded to a heat dissipating base, the upper surface of the heat dissipating base being covered with a member for cutting off the semiconductor elements from the outer environment, terminals electrically connecting the electrodes on said insulator substrate and the electrode placed outside the cutoff member being provided, wherein the material of the heat dissipating base has a linear expanding coefficient larger than the linear expansion coefficient of the semiconductor element and smaller than three times of the linear expansion coefficient of the semiconductor element, and a thermal conductivity larger than 100 W/mK, the semiconductor elements being arranged on at least one electrode surface and in at least two regions divided by the other electrode surface on the insulator substrate.

摘要翻译： 一种半导体器件，其中多个半导体元件被结合到绝缘体衬底上的至少一个电极图案上，所述绝缘体衬底在主表面上形成多个电极图案，所述半导体元件的每个电极电连接到所述电极图案， 绝缘体基板的另一表面被结合到散热基底上，散热基座的上表面覆盖有用于从外部环境切断半导体元件的构件，将绝缘体基板上的电极与电极电连接的端子 设置在切断部件外侧，散热基体的材料的线膨胀系数大于半导体元件的线膨胀系数，小于半导体元件的线膨胀系数的3倍，导热系数 大于100 W / mK，半音 电感元件布置在至少一个电极表面上，并且在至少两个区域中被绝缘体基底上的另一个电极表面分隔。

公开(公告)号：US5920119A

公开(公告)日：1999-07-06

申请号：US802988

申请日：1997-02-21

申请人： Akihiro Tamba ,  Kazuji Yamada ,  Ruichi Saito ,  Tatsuya Shigemura ,  Yukio Sonobe ,  Masataka Sasaki ,  Kazuhiro Suzuki

发明人： Akihiro Tamba ,  Kazuji Yamada ,  Ruichi Saito ,  Tatsuya Shigemura ,  Yukio Sonobe ,  Masataka Sasaki ,  Kazuhiro Suzuki

IPC分类号： H01L25/07 ,  H01L25/18 ,  H01L23/12 ,  H01L23/08 ,  H01L23/48

CPC分类号： H01L25/18 ,  H01L25/072 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L24/45 ,  H01L2924/01004 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/19107 ,  H01L2924/30107

摘要： A power semiconductor module having a power circuit unit; a metal base for sealing the bottom of the module; an insulation substrate for electrically insulating the metal base from the power circuit unit; external input and output terminals connected to the power circuit unit; a resin case in which the external input and output terminals are inserted by integral molding; and a resin encapsulant material has been improved substantially in its reliability through provision of a nut integrally molded with the resin case for fastening the external input and output terminals with a screw; a metal base inserted in the resin case by integral molding; and a recess to receive the end of the screw located immediately below the nut, the recess extending without penetrating the resin case, and the metal base extending to an area below the recess.

摘要翻译： 一种功率半导体模块，具有电源电路单元; 用于密封模块底部的金属底座; 用于将金属基底与电力电路单元电绝缘的绝缘基板; 连接到电源电路单元的外部输入和输出端子; 其中通过一体成型插入外部输入和输出端子的树脂壳体; 树脂密封剂材料的可靠性大大提高，通过设置与树脂壳体一体模制的螺母，用螺钉固定外部输入和输出端子; 通过一体成型插入树脂壳体中的金属基座; 以及凹部，用于接收位于螺母正下方的螺钉的端部，所述凹部延伸而不穿透树脂壳体，并且金属基部延伸到凹部下方的区域。

公开(公告)号：US5177670A

公开(公告)日：1993-01-05

申请号：US832332

申请日：1992-02-07

申请人： Hiroichi Shinohara ,  Hirokazu Inoue ,  Yoichi Abe ,  Akira Kato ,  Hideo Suzuki ,  Kazuji Yamada ,  Masaaki Takahashi ,  Keiichirou Nakanishi

发明人： Hiroichi Shinohara ,  Hirokazu Inoue ,  Yoichi Abe ,  Akira Kato ,  Hideo Suzuki ,  Kazuji Yamada ,  Masaaki Takahashi ,  Keiichirou Nakanishi

IPC分类号： H01L23/36 ,  H01L23/467 ,  H01L23/48 ,  H01L23/498 ,  H01L23/64

CPC分类号： H01L24/73 ,  H01L23/36 ,  H01L23/467 ,  H01L23/481 ,  H01L23/49822 ,  H01L23/642 ,  H01L2224/16 ,  H01L2224/16235 ,  H01L2224/48227 ,  H01L2224/73253 ,  H01L2224/73257 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01056 ,  H01L2924/0106 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01L2924/15312 ,  H01L2924/15787 ,  H01L2924/16152 ,  H01L2924/19041 ,  H01L2924/30107 ,  H01L2924/3011 ,  Y10S257/924

摘要： Noise generated at high frequencies at the time of simultaneous switchings of logical circuits is reduced by lowering an inductance from LSI to a capacitor formed on a substrate. The capacitor is formed to ensure that an inductance from a bonding pad for the LSI loaded on the substrate to an electrode of the capacitor is 0.05 nanohenry. The lower inductance from the LSI to the capacitor allows a reduction in the amount of the noise at high frequencies among those generated in power supply system, whereby the rising time of signals is made shorter, and the speed of arithmetic operation can be increased.

摘要翻译： 通过降低从LSI到形成在基板上的电容器的电感，可以降低在同时切换逻辑电路时在高频时产生的噪声。 形成电容器以确保来自负载在基板上的LSI的焊盘与电容器的电极的电感为0.05纳秒。 从LSI到电容器的较低的电感允许在电源系统中产生的那些电路中的高频噪声量的减少，从而使信号的上升时间更短，并且可以提高算术运算速度。