公开(公告)号：US08413507B2

公开(公告)日：2013-04-09

申请号：US12801405

申请日：2010-06-08

申请人： Tetsuo Fujii ,  Hisanori Yokura ,  Hirofumi Higuchi

发明人： Tetsuo Fujii ,  Hisanori Yokura ,  Hirofumi Higuchi

IPC分类号： G01C19/56 ,  G01P15/125

CPC分类号： H01L27/1203 ,  B81B2201/025 ,  B81B2201/0257 ,  B81B2201/0285 ,  B81B2201/047 ,  B81C1/00182 ,  G01C19/5755 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814 ,  H01L21/84

摘要： A semiconductor dynamic quantity sensor has a substrate including a semiconductor substrate, an insulation layer on a main surface of the semiconductor substrate, and a semiconductor layer on the insulation layer. The main surface has a projection that is trapezoidal or triangular in cross section. The semiconductor layer is divided by a through hole into a movable portion. A tip of the projection is located directly below the movable portion and spaced from the movable portion by a predetermined distance in a thickness direction of the substrate. A width of the tip of the projection is less than a width of the movable portion in a planar direction of the substrate. The distance between the tip of the projection and the movable portion is equal to a thickness of the insulation layer.

摘要翻译： 半导体动态量传感器具有包括半导体衬底，半导体衬底的主表面上的绝缘层和绝缘层上的半导体层的衬底。 主表面具有横截面为梯形或三角形的突起。 半导体层由通孔分割成可动部。 突出部的尖端位于可动部的正下方，与基板的厚度方向与可动部隔开预定的距离。 突起的尖端的宽度小于基板的平面方向上的可动部的宽度。 突起的尖端和可动部之间的距离等于绝缘层的厚度。

公开(公告)号：US08390106B2

公开(公告)日：2013-03-05

申请号：US13076525

申请日：2011-03-31

申请人： Yukihiro Maeda ,  Kouji Kondoh ,  Yoshiharu Harada ,  Takeshi Yamauchi ,  Tetsuo Fujii

发明人： Yukihiro Maeda ,  Kouji Kondoh ,  Yoshiharu Harada ,  Takeshi Yamauchi ,  Tetsuo Fujii

IPC分类号： H01L23/02

CPC分类号： H05K3/4632 ,  H01L23/145 ,  H01L23/3128 ,  H01L23/367 ,  H01L23/3677 ,  H01L23/49894 ,  H01L23/5389 ,  H01L24/13 ,  H01L24/16 ,  H01L24/19 ,  H01L24/20 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L2224/05624 ,  H01L2224/1134 ,  H01L2224/13144 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73259 ,  H01L2224/81203 ,  H01L2224/83192 ,  H01L2224/92224 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/351 ,  H05K1/0206 ,  H05K1/185 ,  H05K3/0061 ,  H05K2201/096 ,  H05K2201/10674 ,  H05K2203/063 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/8384 ,  H01L2924/00014

摘要： A circuit board includes an insulating member and a semiconductor chip encapsulated with the thermoplastic resin portion of the insulating member. A wiring member is located in the insulating member and electrically connected to first and second electrodes on respective sides of the semiconductor chip. The wiring member includes a pad, an interlayer connection member, and a connection portion. A diffusion layer is located between the first electrode and the connection portion, between the pad and the connection portion, and between the second electrode and the interlayer connection member. At least one element of the interlayer connection member has a melting point lower than a glass-transition point of the thermoplastic resin portion. The connection portion is made of material having a melting point higher than a melting point of the thermoplastic resin portion.

摘要翻译： 电路板包括绝缘构件和用绝缘构件的热塑性树脂部分封装的半导体芯片。 布线构件位于绝缘构件中并且电连接到半导体芯片的相应侧上的第一和第二电极。 布线构件包括垫，层间连接构件和连接部。 扩散层位于第一电极和连接部分之间，焊盘和连接部分之间，以及第二电极和层间连接部件之间。 层间连接部件的至少一个元件的熔点低于热塑性树脂部分的玻璃化转变点。 连接部由熔点高于热塑性树脂部分的熔点的材料制成。

公开(公告)号：US08169082B2

公开(公告)日：2012-05-01

申请号：US13287188

申请日：2011-11-02

申请人： Tetsuo Fujii ,  Akitoshi Yamanaka ,  Hisanori Yokura

发明人： Tetsuo Fujii ,  Akitoshi Yamanaka ,  Hisanori Yokura

IPC分类号： H01L23/48

CPC分类号： G01P15/125 ,  B81B7/007 ,  B81B2207/097 ,  G01C19/5719 ,  G01C19/5783 ,  G01P15/0802 ,  G01P2015/0814 ,  H01L23/481 ,  H01L24/11 ,  H01L24/12 ,  H01L24/16 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/94 ,  H01L25/0657 ,  H01L25/16 ,  H01L2224/0401 ,  H01L2224/05558 ,  H01L2224/114 ,  H01L2224/116 ,  H01L2224/13009 ,  H01L2224/13011 ,  H01L2224/13025 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/2518 ,  H01L2224/45144 ,  H01L2224/48 ,  H01L2224/48463 ,  H01L2224/80001 ,  H01L2224/81805 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01072 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10157 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device includes: a sensor including a sensor structure on a first side of the sensor and a periphery element surrounding the sensor structure; and a cap covering the sensor structure and having a second side bonded to the first side of the sensor. The cap includes a first wiring layer on the second side of the cap. The first wiring layer steps over the periphery element. The sensor further includes a sensor side connection portion, and the cap further includes a cap side connection portion. The sensor side connection portion is bonded to the cap side connection portion. At least one of the sensor side connection portion and the cap side connection portion provides an eutectic alloy so that the sensor side connection portion and the cap side connection portion are bonded to each other.

公开(公告)号：US20120025874A1

公开(公告)日：2012-02-02

申请号：US13190798

申请日：2011-07-26

申请人： Hirotaka Saikaku ,  Tsuyoshi Yamamoto ,  Shoji Mizuno ,  Masakiyo Sumitomo ,  Tetsuo Fujii ,  Jun Sakakibara ,  Hitoshi Yamaguchi ,  Yoshiyuki Hattori ,  Rie Taguchi ,  Makoto Kuwahara

发明人： Hirotaka Saikaku ,  Tsuyoshi Yamamoto ,  Shoji Mizuno ,  Masakiyo Sumitomo ,  Tetsuo Fujii ,  Jun Sakakibara ,  Hitoshi Yamaguchi ,  Yoshiyuki Hattori ,  Rie Taguchi ,  Makoto Kuwahara

IPC分类号： H03K17/06 ,  H01L29/739

CPC分类号： H01L29/7813 ,  H01L27/0629 ,  H01L27/0635 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/4983 ,  H01L29/66734 ,  H01L29/7391 ,  H01L29/7393 ,  H01L29/7397 ,  H01L29/7398 ,  H01L29/7805 ,  H01L29/7819 ,  H01L29/7825 ,  H01L29/7831 ,  H01L29/861 ,  H01L2924/0002 ,  H02M7/003 ,  H01L2924/00

摘要： A semiconductor device includes a switching element having: a drift layer; a base region; an element-side first impurity region in the base region; an element-side gate electrode sandwiched between the first impurity region and the drift layer; a second impurity region contacting the drift layer; an element-side first electrode coupled with the element-side first impurity region and the base region; and an element-side second electrode coupled with the second impurity region, and a FWD having: a first conductive layer; a second conductive layer; a diode-side first electrode coupled to the second conductive layer; a diode-side second electrode coupled to the first conductive layer; a diode-side first impurity region in the second conductive layer; and a diode-side gate electrode in the second conductive layer sandwiched between first impurity region and the first conductive layer and having a first gate electrode as an excess carrier injection suppression gate.

摘要翻译： 一种半导体器件包括：具有漂移层的开关元件; 基地区 在基极区域中的元件侧第一杂质区域; 夹在所述第一杂质区域和所述漂移层之间的元件侧栅电极; 接触漂移层的第二杂质区; 与元件侧第一杂质区域和基极区域耦合的元件侧第一电极; 以及与所述第二杂质区域耦合的元件侧第二电极以及具有：第一导电层的FWD; 第二导电层; 耦合到所述第二导电层的二极管侧第一电极; 耦合到所述第一导电层的二极管侧第二电极; 第二导电层中的二极管侧第一杂质区; 以及夹在第一杂质区域和第一导电层之间的第二导电层中的二极管侧栅电极，并具有作为过剩载流子注入抑制栅极的第一栅极电极。

公开(公告)号：US07893458B2

公开(公告)日：2011-02-22

申请号：US11892819

申请日：2007-08-28

申请人： Shigeki Takahashi ,  Takashi Nakano ,  Nozomu Akagi ,  Yasushi Higuchi ,  Tetsuo Fujii ,  Yoshiyuki Hattori ,  Makoto Kuwahara ,  Kyoko Okada

发明人： Shigeki Takahashi ,  Takashi Nakano ,  Nozomu Akagi ,  Yasushi Higuchi ,  Tetsuo Fujii ,  Yoshiyuki Hattori ,  Makoto Kuwahara ,  Kyoko Okada

IPC分类号： H01L29/74 ,  H01L29/76

CPC分类号： H01L27/0727 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/42356 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/7817 ,  H01L29/7821

摘要： A semiconductor device includes: a semiconductor substrate; a lateral MOS transistor disposed in the substrate; a Zener diode disposed in the substrate; and a capacitor disposed in the substrate. The transistor includes a drain and a gate, and the diode and the capacitor are coupled in series between the drain and the gate. This device has minimized dimensions and high switching speed. Further, both of a switching loss and a surge voltage are improved.

摘要翻译： 半导体器件包括：半导体衬底; 设置在基板中的横向MOS晶体管; 设置在基板中的齐纳二极管; 以及设置在基板中的电容器。 晶体管包括漏极和栅极，并且二极管和电容器串联耦合在漏极和栅极之间。 该设备具有最小的尺寸和高切换速度。 此外，改善了开关损耗和浪涌电压两者。

公开(公告)号：US07891244B2

公开(公告)日：2011-02-22

申请号：US12453485

申请日：2009-05-12

申请人： Tameharu Ohta ,  Tetsuo Fujii ,  Masanobu Azukawa ,  Takeshi Ito ,  Itaru Ishii

发明人： Tameharu Ohta ,  Tetsuo Fujii ,  Masanobu Azukawa ,  Takeshi Ito ,  Itaru Ishii

IPC分类号： G01P1/02

CPC分类号： G01C19/56 ,  B81B7/0058 ,  B81B2201/0235 ,  B81B2201/0285 ,  G01D18/00 ,  G01P15/08 ,  H01L2224/48247 ,  H05K13/00 ,  Y10T29/49002 ,  Y10T29/49117 ,  Y10T29/49826

摘要： A physical quantity sensor includes a sensor portion, a casing, and a vibration isolator. The casing includes a supporting portion with a supporting surface that is located to face an end surface of the sensor portion. The vibration isolator is located between the end surface of the sensor portion and the supporting surface of the casing to join the sensor portion to the casing. The vibration isolator reduces a relative vibration between the sensor portion and the casing.

摘要翻译： 物理量传感器包括传感器部分，壳体和隔振器。 壳体包括具有支撑表面的支撑部分，支撑表面位于传感器部分的端表面上。 隔振器位于传感器部分的端面和壳体的支撑表面之间，以将传感器部分接合到壳体。 隔振器减小传感器部分和壳体之间的相对振动。

公开(公告)号：US07866210B2

公开(公告)日：2011-01-11

申请号：US12381356

申请日：2009-03-11

申请人： Tetsuo Fujii ,  Masahito Imai

发明人： Tetsuo Fujii ,  Masahito Imai

IPC分类号： G01P15/125

CPC分类号： B81B7/0006 ,  B81B2201/0235 ,  C07C303/32 ,  C07C303/44 ,  G01C19/56 ,  G01C19/5656 ,  G01C19/5719 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0817 ,  G01P2015/0828 ,  Y10T29/49002 ,  Y10T29/49004 ,  C07C309/17

摘要： A semiconductor mechanical sensor having a new structure in which a S/N ratio is improved. In the central portion of a silicon substrate 1, a recess portion 2 is formed which includes a beam structure. A weight is formed at the tip of the beam, and in the bottom surface of the weight in the bottom surface of the recess portion 2 facing the same, an electrode 5 is formed. An alternating current electric power is applied between the weight portion 4 and the electrode 5 so that static electricity is created and the weight is excited by the static electricity. In an axial direction which is perpendicular to the direction of the excitation of the weight, an electrode 6 is disposed to face one surface of the weight and a wall surface of the substrate which faces the same. A change in a capacitance between the facing electrodes is electrically detected, and therefore, a change in a physical force acting in the same direction is detected.

摘要翻译： 具有S / N比提高的新结构的半导体机械传感器。 在硅衬底1的中心部分，形成包括梁结构的凹部2。 在梁的尖端处形成重物，并且在凹部2的底面中的重物的底面中，重物形成为电极5。 在重量部分4和电极5之间施加交流电力，从而产生静电，并且重量被静电激励。 在与重量的激励方向垂直的轴向方向上，电极6设置为面对重物的一个表面和面向其的基板的壁表面。 对面对电极之间的电容变化进行电检测，因此检测到以相同方向作用的物理力的变化。

公开(公告)号：US20100117167A1

公开(公告)日：2010-05-13

申请号：US12588421

申请日：2009-10-15

申请人： Hisanori Yokura ,  Tetsuo Fujii

发明人： Hisanori Yokura ,  Tetsuo Fujii

IPC分类号： H01L29/84 ,  H01L21/02

CPC分类号： G01P15/125 ,  G01P1/023 ,  G01P15/0802 ,  G01P15/18 ,  G01P2015/082 ,  G01P2015/0831

摘要： A semiconductor dynamic quantity sensor includes a sensor part and a cap connected to the sensor part. Dynamic quantity is detected based on a capacitance of a capacitor defined between a movable electrode and a fixed electrode of the sensor part. A float portion of the sensor part is separated from a support board of the sensor part to define a predetermined interval. At least one of the cap and the support board has a displacing portion displacing the float portion in a direction perpendicular to the support board so as to change the predetermined interval. The movable electrode has a displacement in accordance with the displaced float portion.

摘要翻译： 半导体动态量传感器包括与传感器部连接的传感器部和盖。 基于在传感器部件的可动电极和固定电极之间限定的电容器的电容来检测动态量。 传感器部分的浮动部分与传感器部件的支撑板分离以限定预定间隔。 盖和支撑板中的至少一个具有移位部分，以使浮子部分沿垂直于支撑板的方向移动，从而改变预定间隔。 可移动电极具有根据移位的浮子部分的位移。

公开(公告)号：US20100050767A1

公开(公告)日：2010-03-04

申请号：US12585052

申请日：2009-09-01

申请人： Hirofumi Higuchi ,  Tetsuo Fujii ,  Masaki Inoue

发明人： Hirofumi Higuchi ,  Tetsuo Fujii ,  Masaki Inoue

IPC分类号： G01C19/56

CPC分类号： G01C19/5719

摘要： An angular velocity sensor includes first and second oscillators and a coupling beam. The coupling beam couples the first and second oscillators together in such a manner that the first and second oscillators vibrate relative to each other in a predetermined direction. The coupling beam includes a first post portion joined to a surface of the first oscillator, a second post portion joined to a surface of the second oscillator, and a spring portion that joins the first post portion to the second post portion. The spring portion is spaced from the first and second oscillators and has elasticity in the predetermined direction.

摘要翻译： 角速度传感器包括第一和第二振荡器和耦合梁。 耦合光束以第一和第二振荡器在预定方向上相对于彼此振动的方式将第一和第二振荡器耦合在一起。 耦合梁包括接合到第一振荡器的表面的第一柱部分，与第二振荡器的表面接合的第二柱部分，以及将第一柱部分连接到第二柱部分的弹簧部分。 弹簧部分与第一和第二振荡器间隔开，并且在预定方向上具有弹性。

公开(公告)号：US20090261430A1

公开(公告)日：2009-10-22

申请号：US12385848

申请日：2009-04-21

申请人： Shigenori Suzuki ,  Hisanori Yokura ,  Kenichi Yokoyama ,  Tetsuo Fujii ,  Kazuhiko Sugiura

发明人： Shigenori Suzuki ,  Hisanori Yokura ,  Kenichi Yokoyama ,  Tetsuo Fujii ,  Kazuhiko Sugiura

IPC分类号： H01L29/84 ,  H01L21/30

CPC分类号： B81B7/007 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81C2203/0118 ,  G01C19/56 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814

摘要： A physical quantity sensor includes: a sensor substrate including a first support substrate, a first insulation film and a first semiconductor layer, which are stacked in this order; a cap substrate including a second support substrate disposed on the first semiconductor layer, and has a P conductive type; and multiple electrodes, which are separated from each other. The first support substrate, the first insulation film and the first semiconductor layer have the P conductive type. The physical quantity is detected based on a capacitance between the plurality of electrodes, and the electrodes are disposed in the first semiconductor layer.

摘要翻译： 物理量传感器包括：传感器基板，其包括依次堆叠的第一支撑基板，第一绝缘膜和第一半导体层; 盖基板，包括设置在第一半导体层上的第二支撑基板，并具有P导电型; 以及彼此分离的多个电极。 第一支撑基板，第一绝缘膜和第一半导体层具有P导电型。 基于多个电极之间的电容来检测物理量，并且电极设置在第一半导体层中。