Abstract:
A method of fabricating a semiconductor stacked package is provided. A singulation process is performed on a wafer and a substrate, on which the wafer is stacked. A portion of the wafer on a cutting region is removed, to form a stress concentrated region on an edge of a chip of the wafer. The wafer and the substrate are then cut, and a stress is forced to be concentrated on the edge of the chip of the wafer. As a result, the edge of the chip is warpaged. Therefore, the stress is prevented from extending to the inside of the chip. A semiconductor stacked package is also provided.
Abstract:
A chip package including a chip is provided. The chip includes a sensing region or device region adjacent to an upper surface of the chip. A sensing array is located in the sensing region or device region and includes a plurality of sensing units. A plurality of first openings is located in the chip and correspondingly exposes the sensing units. A plurality of conductive extending portions is disposed in the first openings and is electrically connected to the sensing units, wherein the conductive extending portions extend from the first openings onto the upper surface of the chip. A method for forming the chip package is also provided.
Abstract:
A chip package including a chip having an upper surface, a lower surface and a sidewall is provided. The chip includes a signal pad region adjacent to the upper surface. A first recess extends from the upper surface toward the lower surface along the sidewall. At least one second recess extends from a first bottom of the first recess toward the lower surface. The first and second recesses further laterally extend along a side of the upper surface, and a length of the first recess extending along the side is greater than that of the second recess extending along the side. A redistribution layer is electrically connected to the signal pad region and extends into the second recess. A method for forming the chip package is also provided.
Abstract:
An embodiment of the invention provides a chip package including a semiconductor substrate having a first surface and a second surface opposite thereto. A conducting pad is located on the first surface. A side recess is on at least a first side of the semiconductor substrate, wherein the side recess extends from the first surface toward the second surface and across the entire length of the first side. A conducting layer is located on the first surface and electrically connected to the conducting pad, wherein the conducting layer extends to the side recess.
Abstract:
A method for forming a chip package is provided. A first substrate is provided. A second substrate is attached on the first substrate, wherein the second substrate has a plurality of rectangular chip regions separated by a scribed-line region. A portion of the second substrate corresponding to the scribed-line region is removed to form a plurality of chips on the first substrate, wherein at least one bridge portion is formed between adjacent chips. A chip package formed by the method is also provided.
Abstract:
A wafer level array of chips is provided. The wafer level array of chips comprises a semiconductor wafer, and a least one extending-line protection. The semiconductor wafer has at least two chips, which are arranged adjacent to each other, and a carrier layer. Each chip has an upper surface and a lower surface, and comprises at least one device. The device is disposed upon the upper surface, covered by the carrier layer. The extending-line protection is disposed under the carrier layer and between those two chips. The thickness of the extending-line protection is less than that of the chip. Wherein the extending-line protection has at least one extending-line therein. In addition, a chip package fabricated by the wafer level array of chips, and a method thereof are also provided.
Abstract:
An embodiment of the invention provides a chip package which includes: a semiconductor substrate having a first surface and an opposite second surface; a device region disposed in the substrate; a dielectric layer located on the first surface of the semiconductor substrate; a plurality of conducting pads located in the dielectric layer and electrically connected to the device region; at least one alignment mark disposed in the semiconductor substrate and extending from the second surface towards the first surface.