公开(公告)号：US06669858B2

公开(公告)日：2003-12-30

申请号：US10011369

申请日：2001-11-05

申请人： Claes H. Bjorkman ,  Min Melissa Yu ,  Hongquing Shan ,  David W. Cheung ,  Wai-Fan Yau ,  Kuowei Liu ,  Nasreen Gazala Chapra ,  Gerald Yin ,  Farhad K. Moghadam ,  Judy H. Huang ,  Dennis Yost ,  Betty Tang ,  Yunsang Kim

发明人： Claes H. Bjorkman ,  Min Melissa Yu ,  Hongquing Shan ,  David W. Cheung ,  Wai-Fan Yau ,  Kuowei Liu ,  Nasreen Gazala Chapra ,  Gerald Yin ,  Farhad K. Moghadam ,  Judy H. Huang ,  Dennis Yost ,  Betty Tang ,  Yunsang Kim

IPC分类号： B44C122

CPC分类号： H01L21/76835 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/3121 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76829

摘要： A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in deposition conditions to provide low k dielectric layers that can replace etch stop layers or conventional dielectric layers in damascene applications. A dual damascene structure having two or more dielectric layers with dielectric constants lower than about 4 can be deposited in a single reactor and then etched to form vertical and horizontal interconnects by varying the concentration of a carbon:oxygen gas such as carbon monoxide. The etch gases for forming vertical interconnects preferably comprises CO and a fluorocarbon, and CO is preferably excluded from etch gases for forming horizontal interconnects.

公开(公告)号：US06238588B1

公开(公告)日：2001-05-29

申请号：US08733554

申请日：1996-10-21

申请人： Kenneth Collins ,  David Groechel ,  Raymond Hung ,  Michael Rice ,  Gerald Yin ,  Jian Ding ,  Chunshi Cui

发明人： Kenneth Collins ,  David Groechel ,  Raymond Hung ,  Michael Rice ,  Gerald Yin ,  Jian Ding ,  Chunshi Cui

IPC分类号： B44C122

CPC分类号： H01L21/02063 ,  C23C16/517 ,  H01F2029/143 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32458 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01J37/32871 ,  H01J2237/3343 ,  H01J2237/3345 ,  H01J2237/3346 ,  H01L21/31116 ,  H01L21/6831

摘要： The invention is embodied in a method of processing a semiconductor workpiece in a plasma reactor chamber, including supplying a polymer and etchant precursor gas containing at least carbon and fluorine into the chamber at a first flow rate sufficient of itself to maintain a gas pressure in the chamber in a low pressure range below about 20 mT, supplying a relatively non-reactive gas into the chamber at second flow rate sufficient about one half or more of the total gas flow rate into the chamber, in combination with the first flow rate of the precursor gas, to maintain the gas pressure in the chamber in a high pressure range above 20 mT, and applying plasma source power into the chamber to form a high ion density plasma having an ion density in excess of 1010 ions per cubic centimeter. In one application of the invention, the workpiece includes an oxygen-containing overlayer to be etched by the process and a non-oxygen-containing underlayer to be protected from etching, the precursor gas dissociating in the plasma into fluorine-containing etchant species which etch the oxygen-containing layer and carbon-containing polymer species which accumulate on the non-oxygen-containing underlayer. Alternatively, the high pressure range may be defined as a pressure at which the skin depth of the inductive field exceeds {fraction (1/10)} of the gap between the inductive antenna and the workpiece.

摘要翻译： 本发明体现在一种在等离子体反应器室中处理半导体工件的方法，包括以足以自动维持气体压力的第一流量将至少含有碳和氟的聚合物和蚀刻剂前体气体供应到室中 在低于大约20mT的低压范围内，将第二流量的第二流量的相对非反应性气体供应到室内的总气体流速的约一半以上，并与第一流量 将气体压力保持在高于20mT的高压范围内，并将等离子体源功率施加到腔室中以形成离子密度超过每立方厘米1010离子的高离子密度等离子体。 在本发明的一个应用中，工件包括通过该方法蚀刻的含氧覆层和不受蚀刻保护的非含氧底层，前体气体在等离子体中解离成含氟蚀刻剂，其蚀刻 含氧层和积聚在非含氧底层上的含碳聚合物种类。 或者，高压范围可以被定义为感应场的趋肤深度超过感应天线和工件之间的间隙的{分数（1/10）}的压力。

公开(公告)号：US6074512A

公开(公告)日：2000-06-13

申请号：US893393

申请日：1997-07-15

申请人： Kenneth Collins ,  Michael Rice ,  Douglas Buchberger ,  Craig Roderick ,  Eric Askarinam ,  Gerhard Schneider ,  John Trow ,  Joshua Tsui ,  Dennis Grimard ,  Gerald Yin ,  Robert Wu

发明人： Kenneth Collins ,  Michael Rice ,  Douglas Buchberger ,  Craig Roderick ,  Eric Askarinam ,  Gerhard Schneider ,  John Trow ,  Joshua Tsui ,  Dennis Grimard ,  Gerald Yin ,  Robert Wu

IPC分类号： H05H1/46 ,  C23C16/517 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/683 ,  C23C14/34 ,  C23C16/00 ,  C23F1/02

CPC分类号： H01J37/32522 ,  C23C16/517 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32458 ,  H01J37/32467 ,  H01J37/32688 ,  H01J37/32706 ,  H01J37/32871 ,  H01L21/31116 ,  H01L21/6831 ,  H01F2029/143 ,  H01J2237/3343 ,  H01J2237/3345 ,  H01J2237/3346

摘要： In accordance with a first aspect of the invention, a plasma reactor having a chamber for containing a plasma and a passageway communicating with the chamber is enhanced with a first removable plasma confinement magnet module placed adjacent the passageway including a first module housing and a first plasma confinement magnet inside the housing. It may further include a second removable plasma confinement magnet module placed adjacent the passageway including a second module housing, and a second plasma confinement magnet. Preferably, the first and second modules are located on opposite sides of the passageway. Moreover, the first and second plasma confinement magnets have magnetic orientations which tend to oppose plasma transport or leakage through the passageway. Preferably, the module housing includes a relatively non-magnetic thermal conductor such as aluminum and is in thermal contact with said chamber body. Cooling apparatus can be thermally coupled to the chamber body, whereby to maintain the first plasma confinement magnet below its Curie temperature. If the reactor includes a pumping annulus adjacent of a periphery of the chamber, then the passageway can be one which communicates between the chamber and the pumping annulus. Also, the passageway can be a wafer slit valve or a gas feed inlet. Such a gas feed inlet can be a center gas feed through a ceiling of the chamber. The module housing can rest upon the chamber side wall and the chamber ceiling can rest upon the module housing.

摘要翻译： 根据本发明的第一方面，具有用于容纳等离子体的腔室和与腔室连通的通路的等离子体反应器通过与通道相邻放置的第一可移除等离子体约束磁体模块而增强，该模块包括第一模块壳体和第一等离子体 限制磁体在壳体内。 其还可以包括邻近通道设置的第二可移除等离子体限制磁体模块，包括第二模块壳体和第二等离子体限制磁体。 优选地，第一和第二模块位于通道的相对侧上。 此外，第一和第二等离子体限制磁体具有倾向于抵抗等离子体输送或通过通道的泄漏的磁性取向。 优选地，模块壳体包括诸如铝的相对非磁性的热导体，并​​且与所述室主体热接触。 冷却装置可以热耦合到室主体，从而将第一等离子体限制磁体保持在其居里温度以下。 如果反应器包括邻近室的周边的泵送环，则通道可以是在室和泵送环之间连通的通道。 此外，通道可以是晶片狭缝阀或气体进料口。 这种气体进料口可以是通过室的天花板的中心气体进料。 模块壳体可以搁置在腔室侧壁上，并且室顶板可以靠在模块壳体上。

公开(公告)号：US6010603A

公开(公告)日：2000-01-04

申请号：US891410

申请日：1997-07-09

申请人： Yan Ye ,  Diana Xiaobing Ma ,  Gerald Yin

发明人： Yan Ye ,  Diana Xiaobing Ma ,  Gerald Yin

IPC分类号： H01L21/302 ,  C23F4/00 ,  H01L21/3065 ,  H01L21/3213

CPC分类号： H01L21/32131 ,  C23F4/00 ,  Y10T428/12229 ,  Y10T428/12528 ,  Y10T428/12771 ,  Y10T428/12826 ,  Y10T428/12896

摘要： Copper can be pattern etched at acceptable rates and with selectivity over adjacent materials using an etch process which utilizes a solely physical process which we have termed "enhanced physical bombardment". Enhanced physical bombardment requires an increase in ion density and/or an increase in ion energy of ionized species which strike the substrate surface. To assist in the removal of excited copper atoms from the surface being etched, the power to the ion generation source and/or the substrate offset bias source may be pulsed. In addition, when the bombarding ions are supplied from a remote source, the supply of these ions may be pulsed. Further, thermal phoresis may be used by maintaining a substrate temperature which is higher than the temperature of a surface in the etch chamber. It is also possible to use a chemically reactive species in combination with the physical ion bombardment without causing copper corrosion problems, so long as the concentration of the chemically reactive ion component is sufficiently low that the etching is carried out in a physical bombardment dominated etch regime.

摘要翻译： 铜可以以可接受的速率进行图案蚀刻，并且使用使用仅称为“增强物理轰击”的物理过程的蚀刻工艺对相邻材料具有选择性。 增强的物理轰击需要离子密度的增加和/或离子化物质的离子能量的增加，这些物质撞击到基底表面。 为了帮助从被蚀刻的表面去除激发的铜原子，离子产生源和/或衬底偏置偏置源的功率可以是脉冲的。 此外，当从远程源供应轰击离子时，这些离子的供应可以是脉冲的。 此外，可以通过保持高于蚀刻室中的表面的温度的衬底温度来使用热电泳。 只要化学反应离子组分的浓度足够低以致蚀刻在物理轰击主导的蚀刻状态下进行，也可以将化学反应物质与物理离子轰击结合使用而不引起铜腐蚀问题 。

公开(公告)号：US09208998B2

公开(公告)日：2015-12-08

申请号：US13620654

申请日：2012-09-14

申请人： Gerald Yin ,  Tuqiang Ni ,  Jinyuan Chen ,  Xueyu Qian

发明人： Gerald Yin ,  Tuqiang Ni ,  Jinyuan Chen ,  Xueyu Qian

IPC分类号： H01J37/32 ,  H01L21/67

CPC分类号： H01J37/32165 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/32623 ,  H01J37/32633 ,  H01J37/32642 ,  H01J37/32889 ,  H01J37/32899 ,  H01J2237/334 ,  H01L21/67161 ,  H01L21/67173 ,  H01L21/6719

摘要： A tandem processing-zones chamber having plasma isolation and frequency isolation is provided. At least two RF frequencies are fed from the cathode for each processing zones, where one frequency is about ten times higher than the other, so as to provide decoupled reactive ion etch capability. The chamber body is ground all around and in-between the two processing zones. The use of frequency isolation enables feed of multiple RF frequencies from the cathode, without having crosstalk and beat. A plasma confinement ring is also used to prevent plasma crosstalk. A grounded common evacuation path is connected to a single vacuum pump.

摘要翻译： 提供了具有等离子体隔离和频率隔离的串联处理区室。 对于每个处理区域，至少两个RF频率从阴极馈送，其中一个频率比另一个频率高约十倍，以提供去耦反应离子蚀刻能力。 室体在两个处理区之间周围和两者之间被磨碎。 使用频率隔离可以从阴极馈送多个RF频率，而不会产生串扰和拍频。 等离子体约束环也用于防止等离子体串扰。 接地的公共排气路径连接到单个真空泵。

公开(公告)号：US08297225B2

公开(公告)日：2012-10-30

申请号：US12498295

申请日：2009-07-06

申请人： Gerald Yin ,  Jinyuan Chen ,  Tuqiang Ni

发明人： Gerald Yin ,  Jinyuan Chen ,  Tuqiang Ni

IPC分类号： C23C16/54 ,  C23F1/08

CPC分类号： H01L21/68764 ,  C23C16/4405 ,  C23C16/5096 ,  H01J37/32091 ,  H01J2237/2001 ,  H01L21/68771

摘要： A decoupled capacitive CVD reactor is described, which provides improved CVD capabilities, including processing at lower temperatures, performing alternating deposition and etching steps, and performing in situ cleaning of the chamber, without the need for a remote plasma source. Two RF frequencies are coupled to the susceptor, while the anode is grounded. The high frequency RF source is operated so as to control the plasma density, while the low frequency RF source is operated to control species bombardment on the substrate, so as to control the properties of the film being deposited. Additionally, both RF sources may be controlled, together with selection of gasses supplied to the chamber, to operate the chamber either in deposition mode, partial etch mode, etching mode, or cleaning mode.

摘要翻译： 描述了去耦合的电容CVD反应器，其提供改进的CVD能力，包括在较低温度下处理，执行交替沉积和蚀刻步骤，以及执行腔室的原位清洁，而不需要远程等离子体源。 两个RF频率耦合到基座，而阳极接地。 操作高频RF源以控制等离子体密度，同时操作低频RF源以控制基板上的物质轰击，以便控制被沉积的膜的性质。 此外，可以控制两个RF源以及供应到腔室的气体的选择，以沉积模式，局部蚀刻模式，蚀刻模式或清洁模式来操作腔室。

公开(公告)号：US07658800B2

公开(公告)日：2010-02-09

申请号：US11602568

申请日：2006-11-20

申请人： AiHua Chen ,  Shulin Wang ,  Henry Ho ,  Gerald Yin ,  Qing Lv ,  Li Fu

发明人： AiHua Chen ,  Shulin Wang ,  Henry Ho ,  Gerald Yin ,  Qing Lv ,  Li Fu

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： C23C16/45565 ,  C23C16/45574

摘要： A semiconductor work piece processing reactor is described and which includes a processing chamber defining a deposition region; a pedestal which supports and moves a semiconductor work piece to be processed within the deposition region of the processing chamber; and a gas distribution assembly mounted within the processing chamber and which defines first and second reactive gas passageways which are separated from each other, and which deliver two reactant gases to a semiconductor work piece which is positioned near the gas distribution assembly.

摘要翻译： 描述了半导体工件处理反应器，其包括限定沉积区域的处理室; 基座，其在所述处理室的所述沉积区域内支撑并移动待处理的半导体工件; 以及气体分配组件，其安装在所述处理室内并且限定彼此分离的第一和第二反应气体通道，并且将两个反应气体输送到位于所述气体分配组件附近的半导体工件。

公开(公告)号：US07503996B2

公开(公告)日：2009-03-17

申请号：US11739785

申请日：2007-04-25

申请人： Jinyuan Chen ,  Gerald Yin ,  Xueyu Qian ,  Tuqiang Ni ,  Hiroshi Iizuka

发明人： Jinyuan Chen ,  Gerald Yin ,  Xueyu Qian ,  Tuqiang Ni ,  Hiroshi Iizuka

IPC分类号： C23F1/02

CPC分类号： H01J37/32165 ,  H01J37/32082 ,  H01J37/32174 ,  H03H7/46 ,  H03H11/34

摘要： An RF power supplier is provided, that enables multiple-frequency RF power. The system uses N RF signal generators, combines the RF signals, amplify the combined signals, and then separates the amplified signal. The output of the system is then a multiple-frequency RF power. Optionally, the frequencies are switchable, so that one may select which frequencies the system outputs.

摘要翻译： 提供了RF电源，可实现多频RF功率。 该系统使用N个RF信号发生器，组合RF信号，放大组合信号，然后分离放大的信号。 然后系统的输出是多频RF功率。 可选地，频率是可切换的，使得可以选择系统输出的频率。

公开(公告)号：US20080092815A1

公开(公告)日：2008-04-24

申请号：US11602568

申请日：2006-11-20

申请人： AiHua Chen ,  Shulin Wang ,  Henry Ho ,  Gerald Yin ,  Qing Lv ,  Li Fu

发明人： AiHua Chen ,  Shulin Wang ,  Henry Ho ,  Gerald Yin ,  Qing Lv ,  Li Fu

IPC分类号： C23F1/00 ,  C23C16/00

CPC分类号： C23C16/45565 ,  C23C16/45574

摘要： A semiconductor work piece processing reactor is described and which includes a processing chamber defining a deposition region; a pedestal which supports and moves a semiconductor work piece to be processed within the deposition region of the processing chamber; and a gas distribution assembly mounted within the processing chamber and which defines first and second reactive gas passageways which are separated from each other, and which deliver two reactant gases to a semiconductor work piece which is positioned near the gas distribution assembly.

摘要翻译： 描述了半导体工件处理反应器，其包括限定沉积区域的处理室; 基座，其在所述处理室的所述沉积区域内支撑并移动待处理的半导体工件; 以及气体分配组件，其安装在处理室内并且限定彼此分离的第一和第二反应气体通道，并将两个反应气体输送到位于气体分配组件附近的半导体工件。

公开(公告)号：US20050023694A1

公开(公告)日：2005-02-03

申请号：US10924551

申请日：2004-08-24

申请人： Claes Bjorkman ,  Melissa Yu ,  Hongqing Shan ,  David Cheung ,  Wai-Fan Yau ,  Kuowei Liu ,  Nasreen Chapra ,  Gerald Yin ,  Farhad Moghadam ,  Judy Huang ,  Dennis Yost ,  Betty Tang ,  Yunsang Kim

发明人： Claes Bjorkman ,  Melissa Yu ,  Hongqing Shan ,  David Cheung ,  Wai-Fan Yau ,  Kuowei Liu ,  Nasreen Chapra ,  Gerald Yin ,  Farhad Moghadam ,  Judy Huang ,  Dennis Yost ,  Betty Tang ,  Yunsang Kim

IPC分类号： H01L21/302 ,  A01C15/02 ,  A01C17/00 ,  C23C16/40 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/311 ,  H01L21/312 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L23/48

CPC分类号： H01L21/76835 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/3121 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76829

摘要： A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in deposition conditions to provide low k dielectric layers that can replace etch stop layers or conventional dielectric layers in damascene applications. A dual damascene structure having two or more dielectric layers with dielectric constants lower than about 4 can be deposited in a single reactor and then etched to form vertical and horizontal interconnects by varying the concentration of a carbon:oxygen gas such as carbon monoxide. The etch gases for forming vertical interconnects preferably comprises CO and a fluorocarbon, and CO is preferably excluded from etch gases for forming horizontal interconnects.

摘要翻译： 沉积和蚀刻具有低介电常数和蚀刻速率的介电层的方法，该介电层变化至少3:1以形成水平互连。 电介质层中的碳或氢的量可以通过沉积条件的变化来改变，以提供低k电介质层，其可代替蚀刻停止层或在镶嵌应用中的常规电介质层。 具有介电常数低于约4的两个或多个电介质层的双镶嵌结构可以沉积在单个反应器中，然后通过改变碳：氧气如一氧化碳的浓度进行蚀刻以形成垂直和水平互连。 用于形成垂直互连的蚀刻气体优选地包括CO和碳氟化合物，并且CO优选从用于形成水平互连的蚀刻气体中排除。