公开(公告)号：US12084770B2

公开(公告)日：2024-09-10

申请号：US17400722

申请日：2021-08-12

申请人： GlobalWafers Co., Ltd.

发明人： Chun-Chin Tu ,  Manabu Hamano ,  Lunghsing Hsu

IPC分类号： C23C16/48 ,  C23C16/458 ,  C23C16/52

CPC分类号： C23C16/488 ,  C23C16/458 ,  C23C16/52

摘要： A system for depositing a layer on a substrate includes a processing chamber defining a gas inlet for introducing gas into the processing chamber and a gas outlet to allow the gas to exit the processing chamber. A substrate support is positioned within the processing chamber and is configured to receive a substrate. A transparent upper window includes a convex first face spaced from the substrate support to define an air gap therebetween. The upper window is positioned within the processing chamber to direct the gas from the gas inlet, through the air gap, and to the gas outlet. The first face includes a radially outer surface and a radially inner surface circumscribed within the outer surface. The outer surface has a first radius of curvature and the inner surface has a second radius of curvature that is different from the first radius of curvature.

公开(公告)号：US20240297039A1

公开(公告)日：2024-09-05

申请号：US18640095

申请日：2024-04-19

申请人： ASM IP Holding B.V.

发明人： Charles Dezelah ,  Hideaki Fukuda ,  Viljami J. Pore

IPC分类号： H01L21/02 ,  C23C16/34 ,  C23C16/455 ,  C23C16/52 ,  H01J37/32

CPC分类号： H01L21/02274 ,  C23C16/345 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/45553 ,  C23C16/52 ,  H01J37/32357 ,  H01J37/32449 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/0228 ,  H01J2237/332

摘要： The current disclosure relates to a vapor deposition assembly for depositing silicon nitride on a substrate by a plasma-enhanced cyclic deposition process. The disclosure also relates to a method for depositing silicon nitride on a substrate by a plasma-enhanced cyclic deposition process. The method comprises providing a substrate in a reaction chamber, providing a vapor-phase silicon precursor according to the formula SiH3X, wherein X is iodine or bromine, into the reaction chamber, removing excess silicon precursor and possible reaction byproducts from the reaction chamber and providing a reactive species generated from a nitrogen-containing plasma into the reaction chamber to form silicon nitride on the substrate. The disclosure further relates to structure and devices formed by the method.

公开(公告)号：US12080552B2

公开(公告)日：2024-09-03

申请号：US17654628

申请日：2022-03-14

申请人： Tokyo Electron Limited

发明人： Tatsuya Miyahara ,  Yoshihiro Takezawa ,  Daisuke Suzuki ,  Hiroyuki Hayashi

IPC分类号： H01L21/02 ,  C23C16/24 ,  C23C16/52 ,  C30B28/02

CPC分类号： H01L21/02667 ,  C23C16/24 ,  C23C16/52 ,  C30B28/02 ,  H01L21/02532 ,  H01L21/02592

摘要： To provide a method of depositing a silicon film that can crystallize the silicon film at low temperature and in a short time, and also can deposit the silicon film with high flatness. A method of depositing a silicon film includes supplying a silicon-containing gas on a seed layer, depositing an amorphous silicon film on the seed layer, supplying chlorosilane gas to the amorphous silicon film, and crystallizing the amorphous silicon film while forming a chlorosilane cap layer on the amorphous silicon film.

公开(公告)号：US12077859B2

公开(公告)日：2024-09-03

申请号：US17587560

申请日：2022-01-28

申请人： Lam Research Corporation

发明人： Ishtak Karim ,  Kiyong Cho ,  Adrien LaVoie ,  Jaswinder Guliani ,  Purushottam Kumar ,  Jun Qian

IPC分类号： C23C16/455 ,  C23C16/52 ,  C23C16/54

CPC分类号： C23C16/45536 ,  C23C16/45527 ,  C23C16/45542 ,  C23C16/52 ,  C23C16/54

摘要： Methods and apparatuses for depositing approximately equal thicknesses of a material on at least two substrates concurrently processed in separate stations of a multi-station deposition apparatus are provided.

公开(公告)号：US12077857B2

公开(公告)日：2024-09-03

申请号：US18222024

申请日：2023-07-14

申请人： ASM IP Holding B.V.

发明人： SungHoon Jun ,  HeeChul Jung ,  YonJong Jeon

IPC分类号： C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/50 ,  C23C16/52

CPC分类号： C23C16/455 ,  C23C16/4412 ,  C23C16/45565 ,  C23C16/50 ,  C23C16/52

摘要： Exemplary embodiments of the disclosure provide improved reactor systems, assemblies, and methods for controlling a temperature within the reactor system, such as a temperature of a gas supply unit. Exemplary systems and methods employ an exhaust unit to cause movement of a fluid over a portion of the gas supply unit to better control the temperature of the gas supply unit.

公开(公告)号：US12072689B2

公开(公告)日：2024-08-27

申请号：US17442517

申请日：2020-03-24

申请人： LAM RESEARCH CORPORATION

发明人： Raymond Chau ,  Chung-Ho Huang ,  Henry Chan ,  Vincent Wong ,  Yu Ding ,  Ngoc-Diep Nguyen ,  Gerramine Manuguid

IPC分类号： G05B19/418 ,  C23C14/54 ,  C23C16/52 ,  H01J37/32

CPC分类号： G05B19/41865 ,  C23C14/54 ,  C23C16/52 ,  G05B19/41885 ,  H01J37/32926 ,  G05B2219/39001 ,  G05B2219/45031 ,  G05B2219/45212 ,  H01J2237/334

摘要： For etching tools, a neural network model is trained to predict optimum scheduling parameter values. The model is trained using data collected from preventive maintenance operations, recipe times, and wafer-less auto clean times as inputs. The model is used to capture underlying relationships between scheduling parameter values and various wafer processing scenarios to make predictions. Additionally, in tools used for multiple parallel material deposition processes, a nested neural network based model is trained using machine learning. The model is initially designed and trained offline using simulated data and then trained online using real tool data for predicting wafer routing path and scheduling. The model improves accuracy of scheduler pacing and achieves highest tool/fleet utilization, shortest wait times, and fastest throughput.

公开(公告)号：US12071687B2

公开(公告)日：2024-08-27

申请号：US17900577

申请日：2022-08-31

申请人： Tokyo Electron Limited

发明人： Michiko Nakaya ,  Toru Hisamatsu ,  Shinya Ishikawa ,  Sho Kumakura ,  Masanobu Honda ,  Yoshihide Kihara

IPC分类号： C23C16/455 ,  C23C16/52 ,  H01J37/32 ,  H01L21/02 ,  H01L21/311

CPC分类号： C23C16/45536 ,  C23C16/45544 ,  C23C16/45553 ,  C23C16/52 ,  H01J37/32834 ,  H01L21/0228 ,  H01L21/31116 ,  H01L21/31144 ,  H01J2237/3321 ,  H01J2237/3341

摘要： A plasma processing apparatus in the present disclosure includes a plasma processing chamber, a gas supply, a power supply, and a controller. The controller causes (a) forming a first film on side walls of an opening of a processing target using the plasma so that the first film has different thicknesses along a spacing between pairs of side walls facing each other, and (b) forming a second film by performing a film forming cycle one or more times after (a) so that the second film has different thicknesses along the spacing between the pairs of side walls facing each other.

公开(公告)号：US20240279812A1

公开(公告)日：2024-08-22

申请号：US18559997

申请日：2022-05-06

申请人： VAT HOLDING AG

发明人： Frantisek BALON ,  Kerim YUNT ,  Dominic MAYRHOFER

IPC分类号： C23C16/52 ,  C23C16/44 ,  C23C16/455

CPC分类号： C23C16/52 ,  C23C16/4412 ,  C23C16/45561

摘要： Disclosed is a vacuum processing system including a vacuum chamber, a controllable fluid application arrangement connected to the vacuum chamber and configured to provide inflow of fluid into the vacuum chamber in controlled manner and a controlling and/or regulating unit for controlling at least the controllable fluid application arrangement. The vacuum processing system comprises an atmospheric analyzer, the atmospheric analyzer is arranged and configured to determine atmospheric information of inside of the vacuum chamber and to provide the atmospheric information as a respective atmospheric signal and the controlling and/or regulating unit is configured to control the controllable fluid application arrangement as a function of the atmospheric signal.

公开(公告)号：US20240279808A1

公开(公告)日：2024-08-22

申请号：US18419021

申请日：2024-01-22

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Minsoo PARK ,  Songyi BAEK ,  Hyungwoo CHOI

IPC分类号： C23C16/455 ,  C23C16/44 ,  C23C16/448 ,  C23C16/52

CPC分类号： C23C16/45561 ,  C23C16/4405 ,  C23C16/448 ,  C23C16/52

摘要： A gas supply system includes a manifold for supplying gases for processing the substrate to a process chamber; a cleaning gas supply line supplying a cleaning gas to the manifold; a first inert gas supply line supplying a first inert gas to the cleaning gas supply line; a first opening/closing valve opening and closing the cleaning gas supply line; a reaction gas supply line supplying a reaction gas to the manifold; a source gas supply line provided with a vaporizer and supplying the source gas to the manifold; a second inert gas supply line supplying a second inert gas to the manifold and branching out to a carrier gas supply line connected to the vaporizer and a curtain gas supply line bypassing the vaporizer; a second opening/closing valve selectively opening or closing the carrier gas supply line and the curtain gas supply line; and a controller.

公开(公告)号：US20240279807A1

公开(公告)日：2024-08-22

申请号：US18651088

申请日：2024-04-30

申请人： Kokusai Electric Corporation

发明人： Takuya JODA ,  Yukinao KAGA ,  Yoshimasa NAGATOMI

IPC分类号： C23C16/455 ,  C23C16/30 ,  C23C16/52 ,  H01L21/285 ,  H10B43/27

CPC分类号： C23C16/45557 ,  C23C16/303 ,  C23C16/52 ,  H01L21/28568 ,  H10B43/27

摘要： Described herein is a technique capable of improving characteristics of a film. According to one or more embodiments of the present disclosure, there is provided a technique that includes: (a) performing (a-1) supplying in parallel a metal-containing gas and a reducing gas that contains silicon and hydrogen and is free of halogen to a substrate in a process chamber, and (a-2) exhausting an inner atmosphere of the process chamber; (b) repeatedly performing (a) a first number of times; (c) supplying a nitrogen-containing gas to the substrate in the process chamber and exhausting the inner atmosphere of the process chamber after performing (b); and (d) repeatedly performing (a) a second number of times.