公开(公告)号：US09580306B2

公开(公告)日：2017-02-28

申请号：US14425966

申请日：2013-09-25

Applicant: MITSUBISHI HEAVY INDUSTRIES MACHINE TOOL CO., LTD. ,  NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Masato Kinouchi ,  Takayuki Goto ,  Takeshi Tsuno ,  Jun Utsumi ,  Kensuke Ide ,  Takenori Suzuki ,  Keiichiro Tsutsumi ,  Hideki Takagi ,  Yuuichi Kurashima

IPC: B81C3/00 ,  H01L21/67 ,  B23K20/00 ,  B81C99/00 ,  H01L21/20

CPC classification number: B81C3/001 ,  B23K20/00 ,  B23K20/008 ,  B81C99/0025 ,  H01L21/2007 ,  H01L21/67092 ,  H01L21/67207

Abstract: A room temperature bonding apparatus includes a first beam source, a second beam source, and a press bonding mechanism. The first beam source emits a first activation beam that irradiates a first surface of a first substrate. Independently from the first beam source, the second beam source emits a second activation beam that irradiates a second surface of a second substrate. The press bonding mechanism bonds between the first substrate and the second substrate by contacting between the first surface and the second surface after the first surface is irradiated with the first activation beam and the second surface is irradiated with the second activation beam. Thus, a plurality of the substrates made of different materials is appropriately bonded.

Abstract translation: 室温接合装置包括第一光束源，第二光束源和压接机构。 第一光束源发射照射第一衬底的第一表面的第一激活光束。 独立于第一光束源，第二光束源发射照射第二衬底的第二表面的第二激活光束。 压接机构通过在第一表面被第一激活光束照射并且第二表面被第二激活光束照射之后通过第一表面和第二表面之间的接触而在第一基板和第二基板之间接合。 因此，将由不同材料制成的多个基板适当地接合。

公开(公告)号：USD779430S1

公开(公告)日：2017-02-21

申请号：US29533609

申请日：2015-07-20

Applicant: SUMITOMO SEIKA CHEMICALS CO., LTD. ,  NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY ,  I & P CO., LTD.

Designer： Noriyuki Hayashizaka ,  Daisuke Mishou ,  Takeo Ebina ,  Satomi Hattori ,  Takahiro Ishida ,  Tomoyuki Yamaguchi

公开(公告)号：US20170037538A1

公开(公告)日：2017-02-09

申请号：US15296078

申请日：2016-10-18

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Keiko Masumoto

IPC: C30B25/18 ,  C30B25/16 ,  C30B29/36 ,  C30B33/10 ,  H01L21/324 ,  H01L29/16 ,  H01L29/04 ,  H01L21/02 ,  H01L21/306 ,  C30B25/20 ,  C23C16/32

CPC classification number: C30B25/186 ,  C23C16/325 ,  C30B25/165 ,  C30B25/20 ,  C30B29/36 ,  C30B33/10 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/0259 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/30604 ,  H01L21/30625 ,  H01L21/3065 ,  H01L21/324 ,  H01L21/3247 ,  H01L29/045 ,  H01L29/1608 ,  Y10T428/24529

Abstract: A subject of present invention is to enable reducing, even in growth at a high C/Si ratio, contamination by different polytypes with respect to a silicon carbide epitaxial wafer having a low off-angle, and to provide the silicon carbide epitaxial wafer which enables forming a reliable high voltage silicon carbide semiconductor element.The silicon carbide epitaxial wafer of the present invention is a silicon carbide epitaxial wafer comprising an epitaxially grown layer disposed on a silicon carbide substrate having an α-type crystal structure and an off-angle tilted at an angle of more than 0° and less than 4° from a (0001) Si plane or a (000-1) C plane, wherein a region of a step bunching including five to ten bunched steps of 1 nm in height occupies 90% or more of the surface of the silicon carbide substrate.

Abstract translation: 本发明的碳化硅外延晶片是碳化硅外延晶片，其包括设置在碳化硅基板上的外延生长层，该外延生长层具有α型晶体结构，并且偏角倾斜大于0°且小于 （0001）Si平面或（000-1）C面的4°，其中高度为1nm的5至10个成束步骤的台阶聚束区域占据碳化硅衬底表面的90％或更多 。

公开(公告)号：US20160361698A1

公开(公告)日：2016-12-15

申请号：US15121630

申请日：2015-03-03

Applicant: KANEKA CORPORATION ,  NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Satohiro YANAGISAWA ,  Takuto NAGANO ,  Masashi IZUMIDA ,  Toshiaki TAIRA ,  Tomohiro IMURA ,  Dai KITAMOTO

IPC: B01F17/00 ,  A61K8/64 ,  A61Q5/02 ,  A61Q19/00 ,  A61Q15/00 ,  A61Q17/04 ,  A61Q11/00 ,  A61K47/20 ,  A61K47/42 ,  C11D1/22 ,  C11D1/00 ,  D21H17/20 ,  D21H17/09 ,  C09D7/12 ,  C05G3/00 ,  A23L2/52 ,  A23L33/10 ,  A61K8/46

CPC classification number: B01F17/005 ,  A23L2/52 ,  A23L33/10 ,  A23V2002/00 ,  A61K8/361 ,  A61K8/463 ,  A61K8/466 ,  A61K8/64 ,  A61K8/70 ,  A61K47/183 ,  A61K47/20 ,  A61K47/42 ,  A61K2800/10 ,  A61K2800/596 ,  A61Q5/02 ,  A61Q11/00 ,  A61Q15/00 ,  A61Q17/04 ,  A61Q19/00 ,  A61Q19/007 ,  B01F17/0057 ,  B01F17/0085 ,  C05G3/00 ,  C09D7/41 ,  C09D7/63 ,  C09D7/65 ,  C11D1/008 ,  C11D1/10 ,  C11D1/22 ,  D21H17/09 ,  D21H17/20 ,  D21H27/20

Abstract: The objective of the present invention is to provide a method for remarkably reducing a critical micelle concentration of an anionic surfactant, which is used in a large amount currently, to reduce the amount to be used. Also, the objective of the present invention is to provide a surfactant composition of which whole critical micelle concentration is remarkably reduced and in which an amount of an anionic surfactant is reduced in comparison with the case of using an anionic surfactant only as a surfactant. The method for reducing a critical micelle concentration of an anionic surfactant according to the present invention is characterized in using a cyclic lipopeptide biosurfactant in combination with the anionic surfactant.

Abstract translation: 本发明的目的是提供一种显着降低目前大量使用的阴离子表面活性剂的临界胶束浓度以减少使用量的方法。 此外，本发明的目的是提供一种表面活性剂组合物，其与仅使用阴离子表面活性剂作为表面活性剂的情况相比，其全部临界胶束浓度显着降低，并且其中阴离子表面活性剂的量减少。 根据本发明的降低阴离子表面活性剂的临界胶束浓度的方法的特征在于使用环状脂肽生物表面活性剂与阴离子表面活性剂的组合。

公开(公告)号：US09520278B2

公开(公告)日：2016-12-13

申请号：US14597727

申请日：2015-01-15

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY ,  S.T. JAPAN INC.

Inventor： Kazumi Inagaki ,  Shin-ichiro Fujii ,  Shin-ichi Miyashita ,  Koichi Chiba ,  Takao Nakagawa ,  Masaaki Abe ,  Nobuyoshi Kitagawa ,  Yosuke Nakagawa

IPC: H01J49/04 ,  H01J49/10

CPC classification number: H01J49/045 ,  H01J49/105

Abstract: An object is to mix multiple liquids sufficiently and then nebulize the mixed liquids while maintaining the nebulizing efficiency. A nebulizer includes a first inner tube disposed inside an outer tube and having therein a first sample passage through which a first liquid sample flows, a second inner tube disposed inside the outer tube in parallel with the first inner tube and having therein a second sample passage through which a second liquid sample flows, a membranous member disposed with a gap between the membranous member and sample outlets formed at respective ends of the inner tubes. The gap forms mixing space in which a gas passing through a gas passage converts the first and second liquid samples flowing out of the sample outlets into droplets and mixes the droplets and the membranous member has multiple holes through which the mixed liquid samples pass along with the gas.

Abstract translation: 目的是充分混合多种液体，然后使混合液体雾化，同时保持喷雾效率。 喷雾器包括设置在外管内的第一内管，其中具有第一液体样品流过的第一样品通道，与第一内管平行设置在第二内管内的第二内管，其中具有第二样品通道 第二液体样品通过其流动，膜构件设置在膜构件和形成在内管的各个端部处的样品出口之间的间隙。 间隙形成混合空间，其中通过气体通道的气体将从样品出口流出的第一和第二液体样品转化成液滴并混合液滴，并且膜构件具有多个孔，混合液体样品通过该孔与 加油站。

公开(公告)号：US20160357035A1

公开(公告)日：2016-12-08

申请号：US14345915

申请日：2014-02-28

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Toshihiro Kamei ,  Ryohei Takei ,  Masahiko Mori ,  Youichi Sakakibara ,  Makoto Okano

IPC: G02F1/025 ,  G02F1/225

CPC classification number: G02F1/025 ,  G02F1/2257 ,  G02F2001/0151 ,  G02F2001/212 ,  G02F2202/103 ,  G02F2202/105

Abstract: An optical semiconductor device in which a first optical waveguide 407 comprising a silicon-containing amorphous semiconductor layer and a second optical waveguide 409 containing a silicon-containing i-type semiconductor layer as a constituent element are disposed in different layers in a range in which optical interaction can occur. An electro-optical modulator 409 having a pin junction structure comprising a p-type semiconductor layer 403, an i-type semiconductor layer 404, and an n-type semiconductor layer 405 is provided to at least a portion of the second optical waveguide 409, and the index of refraction of the second optical waveguide is varied by the electro-optical modulator, whereby light waves propagated through the first optical waveguide are modulated.

Abstract translation: 一种光学半导体器件，其中包括含硅非晶半导体层的第一光波导407和含有含硅i型半导体层作为构成元件的第二光波导409设置在不同的层中，其中光学 可能发生相互作用。 具有包括p型半导体层403，i型半导体层404和n型半导体层405的pin结结构的电光调制器409设置在第二光波导409的至少一部分上， 并且通过电光调制器改变第二光波导的折射率，由此调制通过第一光波导传播的光波。

公开(公告)号：US09516699B2

公开(公告)日：2016-12-06

申请号：US14436994

申请日：2013-09-06

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY ,  MICROMACHINE CENTER

Inventor： Hironao Okada ,  Toshihiro Itoh ,  Masao Arakawa ,  Toshio Sakamizu

IPC: H04W4/00 ,  H04W88/18 ,  G08C15/00 ,  G08C15/06 ,  H04M11/00 ,  H04Q9/00 ,  H04W84/18 ,  H04W52/02 ,  H04W64/00

CPC classification number: H04W88/18 ,  G08C15/00 ,  G08C15/06 ,  H04M11/00 ,  H04Q9/00 ,  H04Q2209/10 ,  H04Q2209/40 ,  H04Q2209/82 ,  H04Q2209/823 ,  H04Q2209/88 ,  H04W52/0251 ,  H04W64/00 ,  H04W84/18 ,  Y02D70/164

Abstract: A sensor network system is provided with a plurality of sensor terminals disposed in a predetermined area, and a monitoring center device that collects sensing data wirelessly transmitted from each of the plurality of sensor terminals. The sensor terminals wirelessly and intermittently transmit a transmission signal including sensor identification information and the latest sensing data from the sensors. The monitoring center device has the function of acquiring positional information of the sensor terminals in the predetermined area, and accumulates each item of the sensing data from the sensor terminals as time-series data in association with information about the time of acquisition. On the basis of the positional information of the sensor terminals and the time-series data of the accumulated sensing data, a time-series variation of an environmental element in the predetermined area is visually presented. The sensor network system enables monitoring of detailed environmental changes corresponding to differences in position.

Abstract translation: 传感器网络系统设置有设置在预定区域中的多个传感器端子，以及监测中心设备，其收集从多个传感器端子中的每一个无线传送的感测数据。 传感器端子从传感器无线地且间歇地传输包括传感器识别信息和最新检测数据的传输信号。 监视中心装置具有获取预定区域中的传感器端子的位置信息的功能，并且将来自传感器端子的感测数据的每个项目作为与获取时间的信息相关联的时间序列数据累积。 基于传感器端子的位置信息和累积感测数据的时间序列数据，可视地呈现预定区域中的环境元素的时间序列变化。 传感器网络系统能够监测与位置差异相对应的详细环境变化。

公开(公告)号：US20160349545A1

公开(公告)日：2016-12-01

申请号：US14345316

申请日：2014-02-20

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY ,  PHOTONICS ELECTRONICS TECHNOLOGY REARCH ASSOCIATION

Inventor： Toshihiro Kamei ,  Ryohei Takei ,  Masahiko Mori ,  Youichi Sakakibara ,  Junichi Fujikata

IPC: G02F1/025

CPC classification number: G02F1/025 ,  G02F2001/0151 ,  G02F2202/103 ,  G02F2202/105

Abstract: An object of the present invention is to provide an electro-optical modulator that allows high-speed carrier injection into a silicon-containing i-type amorphous semiconductor, particularly a-Si:H, and has little optical loss.An electro-optical modulator comprises: a substrate 201; an optical waveguide comprising a silicon-containing i-type amorphous semiconductor 204 formed on the substrate; and a silicon-containing p-type semiconductor layer 203 and a silicon-containing n-type semiconductor layer 205 arranged apart from each other with the silicon-containing optical waveguide comprising an i-type amorphous semiconductor 204 interposed therebetween and constituting optical waveguides together with the silicon-containing optical waveguide comprising an i-type amorphous semiconductor. The silicon-containing p-type semiconductor layer 203 and/or silicon-containing n-type semiconductor layer 205 are a crystalline semiconductor layer.

Abstract translation: 电光调制器包括：基板201; 包括形成在所述基板上的含硅i型非晶半导体204的光波导; 以及含硅的p型半导体层203和含硅的n型半导体层205，其含硅光波导包括插入其间的i型非晶半导体204，并且构成光波导与 所述含硅光波导包括i型非晶半导体。 含硅p型半导体层203和/或含硅的n型半导体层205是结晶半导体层。

公开(公告)号：US20160333443A1

公开(公告)日：2016-11-17

申请号：US15219753

申请日：2016-07-26

Applicant: GS Yuasa International Ltd. ,  National Institute of Advanced Industrial Science and Technology

Inventor： Tadashi KAKEYA ,  Manabu KANEMOTO ,  Minoru KUZUHARA ,  Tetsuya OZAKI ,  Masaharu WATADA ,  Tetsuo SAKAI

IPC: C22C19/03 ,  C22C1/02 ,  H01M4/1395 ,  C22F1/10 ,  H01M4/134 ,  C22C19/00 ,  C22F1/00

CPC classification number: C22C19/03 ,  C22C1/023 ,  C22C1/0441 ,  C22C19/007 ,  C22F1/002 ,  C22F1/10 ,  H01M4/134 ,  H01M4/1395 ,  H01M4/366 ,  H01M4/383 ,  H01M10/345 ,  H01M2004/027 ,  Y10T428/12493

Abstract: Provided is a hydrogen storage alloy which is characterized in that two or more crystal phases having different crystal structures are layered in a c-axis direction of the crystal structures. The hydrogen storage alloy is further characterized in that a difference between a maximum value and a minimum value of a lattice constant a in the crystal structures of the laminated two or more crystal phases is 0.03 Å or less.

Abstract translation: 提供一种储氢合金，其特征在于，在晶体结构的c轴方向上层叠具有不同晶体结构的两个以上的结晶相。 储氢合金的特征还在于，层叠的两个或多个结晶相的晶体结构中的晶格常数a的最大值和最小值之间的差为0.03以下。

公开(公告)号：US09496345B2

公开(公告)日：2016-11-15

申请号：US14418897

申请日：2013-07-31

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY ,  CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY

Inventor： Kazutoshi Kojima ,  Shiyang Ji ,  Tetsuya Miyazawa ,  Hidekazu Tsuchida ,  Koji Nakayama ,  Tetsuro Hemmi ,  Katsunori Asano

IPC: H01L29/15 ,  H01L29/10 ,  H01L29/66 ,  H01L29/16 ,  C30B25/20 ,  C30B29/36 ,  H01L21/02 ,  H01L29/04 ,  H01L29/167 ,  H01L29/739 ,  H01L21/04

CPC classification number: H01L29/1608 ,  C30B25/20 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0259 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/046 ,  H01L29/04 ,  H01L29/045 ,  H01L29/167 ,  H01L29/66068 ,  H01L29/7393 ,  H01L29/7395

Abstract: The present invention provides a semiconductor structure which includes at least a p-type silicon carbide single crystal layer having an α-type crystal structure, containing aluminum at impurity concentration of 1×1019 cm−3 or higher, and having thickness of 50 μm or greater. Further provided is a method for producing the semiconductor structure of the present invention which method includes at least epitaxial growth step of introducing silicon carbide source and aluminum source and epitaxially growing p-type silicon carbide single crystal layer over a base layer made of silicon carbide single crystal having α-type crystal structure, wherein the epitaxial growth step is performed at temperature conditions of from 1,500° C. to 1,700° C., and pressure conditions of from 5×103 Pa to 25×103 Pa.

Abstract translation: 本发明提供一种半导体结构，其至少包括具有α型晶体结构的p型碳化硅单晶层，其含有杂质浓度为1×1019 cm -3以上的铝，厚度为50μm，或 更大 还提供了一种制造本发明的半导体结构的方法，该方法至少包括将碳化硅源和铝源引入并外延生长的p型碳化硅单晶层的外延生长步骤在由碳化硅单体制成的基底层上 具有α型晶体结构的晶体，其中外延生长步骤在1500℃至1,700℃的温度条件下进行，压力条件为5×10 3 Pa至25×10 3 Pa。