利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

104 条记录 (耗时 0.026 秒)

    Plasma RIE polymer removal
    23.
    发明授权
    Plasma RIE polymer removal 失效
    等离子体RIE聚合物去除

    公开(公告)号：US06758223B1

    公开(公告)日：2004-07-06

    申请号：US09603254

    申请日：2000-06-23

    申请人： Andy Cowley ,  Peter Emmi ,  Timothy Dalton ,  Christopher Jahnes

    发明人： Andy Cowley ,  Peter Emmi ,  Timothy Dalton ,  Christopher Jahnes

    IPC分类号： B08B600

    CPC分类号： H01L21/02063 ,  H01L21/31138 ,  H01L21/76804 ,  H01L21/76807 ,  Y10S134/902 ,  Y10S438/906

    摘要： A method for removal of post reactive ion etch by-product from a semiconductor wafer surface or microelectronic composite structure comprising: supplying a reducing gas plasma incorporating a forming gas mixture selected from the group consisting of a mixture of N2/H2 or a mixture of NH3/H2 into a vacuum chamber in which a semiconductor wafer surface or a microelectronic composite structure is supported to form a post-RIE polymer material by-product on the composite structure without significant removal of an organic, low K material which has also been exposed to the reducing gas plasma; and removing the post-RIE polymer material by-product with a wet clean.

    摘要翻译： 一种用于从半导体晶片表面或微电子复合结构去除后反应离子蚀刻副产物的方法，包括：提供还原气体等离子体，该还原气体等离子体包含选自N2 / H2或NH3混合物的成形气体混合物 / H2进入真空室，其中半导体晶片表面或微电子复合结构被支撑以在复合结构上形成后RIE聚合物材料副产物，而不显着除去已经暴露于 还原气体等离子体; 并用湿式清洁剂除去后RIE聚合物材料副产物。

    MICRO-CAVITY MEMS DEVICE AND METHOD OF FABRICATING SAME
    25.
    发明申请
    MICRO-CAVITY MEMS DEVICE AND METHOD OF FABRICATING SAME 失效
    微孔MEMS器件及其制造方法

    公开(公告)号：US20080092367A1

    公开(公告)日：2008-04-24

    申请号：US11968896

    申请日：2008-01-03

    申请人： Louis Hsu ,  Lawrence Clevenger ,  Timothy Dalton ,  Carl Radens ,  Keith Wong ,  Chih-Chao Yang

    发明人： Louis Hsu ,  Lawrence Clevenger ,  Timothy Dalton ,  Carl Radens ,  Keith Wong ,  Chih-Chao Yang

    IPC分类号： H01H11/00 ,  H01F41/04

    CPC分类号： H01H50/005 ,  H01H2050/007 ,  Y10T29/4902 ,  Y10T29/49105 ,  Y10T29/49147

    摘要： A method of fabricating a MEMS switch having a free moving inductive element within in micro-cavity guided by at least one inductive coil. The switch consists of an upper inductive coil at one end of a micro-cavity; optionally, a lower inductive coil; and a free-moving inductive element preferably made of magnetic material. The coils are provided with an inner permalloy core. Switching is achieved by passing a current through the upper coil, inducing a magnetic field unto the inductive element. The magnetic field attracts the free-moving inductive element upwards, shorting two open conductive wires, closing the switch. When the current flow stops or is reversed, the free-moving magnetic element drops back by gravity to the bottom of the micro-cavity and the conductive wires open. When the chip is not mounted with the correct orientation, the lower coil pulls the free-moving inductive element back at its original position.

    摘要翻译： 一种制造具有由至少一个感应线圈引导的微腔内的自由运动的感应元件的MEMS开关的方法。 开关由微腔一端的上感应线圈组成; 可选地，下感应线圈; 以及优选由磁性材料制成的自由移动的电感元件。 线圈设有内坡道合金芯。 通过使电流通过上部线圈，从而产生电感元件的磁场来实现切换。 磁场向上吸引自由移动的感应元件，短路两根开放的导线，闭合开关。 当电流停止或反转时，自由移动的磁性元件通过重力返回到微腔的底部并且导线打开。 当芯片没有以正确的方向安装时，下线圈将自由移动的感应元件拉回其原始位置。

    INTERCONNECT STRUCTURE AND METHOD OF FABRICATION OF SAME
    27.
    发明申请
    INTERCONNECT STRUCTURE AND METHOD OF FABRICATION OF SAME 有权
    互连结构及其制造方法

    公开(公告)号：US20080006944A1

    公开(公告)日：2008-01-10

    申请号：US11860590

    申请日：2007-09-25

    申请人： Chih-Chao Yang ,  Lawrence Clevenger ,  Andrew Cowley ,  Timothy Dalton ,  Meeyoung Yoon

    发明人： Chih-Chao Yang ,  Lawrence Clevenger ,  Andrew Cowley ,  Timothy Dalton ,  Meeyoung Yoon

    IPC分类号： H01L23/52

    CPC分类号： H01L21/76849 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76831 ,  H01L21/76843 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A damascene wire and method of forming the wire. The method including: forming a mask layer on a top surface of a dielectric layer; forming an opening in the mask layer; forming a trench in the dielectric layer where the dielectric layer is not protected by the mask layer; recessing the sidewalls of the trench under the mask layer; forming a conformal conductive liner on all exposed surface of the trench and the mask layer; filling the trench with a core electrical conductor; removing portions of the conductive liner extending above the top surface of the dielectric layer and removing the mask layer; and forming a conductive cap on a top surface of the core conductor. The structure includes a core conductor clad in a conductive liner and a conductive capping layer in contact with the top surface of the core conductor that is not covered by the conductive liner.

    摘要翻译： 一种镶嵌线及其形成方法。 该方法包括：在电介质层的顶表面上形成掩模层; 在掩模层中形成开口; 在电介质层中形成沟槽，其中电介质层不被掩模层保护; 使掩模层下方的沟槽的侧壁凹陷; 在沟槽和掩模层的所有暴露表面上形成共形导电衬垫; 用芯电导体填充沟槽; 去除在电介质层的顶表面上方延伸的导电衬垫的部分，并去除掩模层; 以及在所述芯导体的顶表面上形成导电帽。 该结构包括包覆在导电衬垫中的芯导体和与未被导电衬垫覆盖的芯导体的顶表面接触的导电覆盖层。

    Method of forming an interconnect structure
    28.
    发明申请
    Method of forming an interconnect structure 失效
    形成互连结构的方法

    公开(公告)号：US20070148966A1

    公开(公告)日：2007-06-28

    申请号：US11315923

    申请日：2005-12-22

    申请人： Heidi Baks ,  Shyng-Tsong Chen ,  Timothy Dalton ,  Nicholas Fuller ,  Kaushik Kumar

    发明人： Heidi Baks ,  Shyng-Tsong Chen ,  Timothy Dalton ,  Nicholas Fuller ,  Kaushik Kumar

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/76802 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76811

    摘要： A method of forming damascene interconnect structure in an organo-silicate glass layer without causing damage to the organo-silicate glass material. The method includes forming a stack of hardmask layers over the organo-silicate glass layer, defining openings in the hardmask and organo-silicate glass layers using a combination of plasma etch and plasma photoresist removal processes and performing one or more additional plasma etch processes that do not include oxygen containing species to etch the openings to depths required for forming the damascene interconnect structures and to remove any organo-silicate material damaged by the combination of plasma etch and plasma photoresist removal processes.

    摘要翻译： 在有机硅酸盐玻璃层中形成镶嵌互连结构而不会损坏有机硅酸盐玻璃材料的方法。 该方法包括在有机硅酸盐玻璃层上形成硬掩模层堆叠，使用等离子体蚀刻和等离子体光致抗蚀剂去除方法的组合在硬掩模和有机硅酸盐玻璃层中限定开口，并执行一个或多个额外的等离子体蚀刻工艺 不包括含氧物质，以将开口蚀刻到形成镶嵌互连结构所需的深度，并除去由等离子体蚀刻和等离子体光致抗蚀剂去除工艺的组合损坏的任何有机硅酸盐材料。

    Post-etch removal of fluorocarbon-based residues from a hybrid dielectric structure
    29.
    发明申请
    Post-etch removal of fluorocarbon-based residues from a hybrid dielectric structure 审中-公开
    从混合电介质结构中去除基于碳氟化合物的残留物

    公开(公告)号：US20070059922A1

    公开(公告)日：2007-03-15

    申请号：US11162511

    申请日：2005-09-13

    申请人： Lawrence Clevenger ,  Andrew Cowley ,  Timothy Dalton ,  Mark Hoinkis ,  Kaushik Kumar ,  Douglas La Tulipe ,  David Rath ,  Chih-Chao Yang

    发明人： Lawrence Clevenger ,  Andrew Cowley ,  Timothy Dalton ,  Mark Hoinkis ,  Kaushik Kumar ,  Douglas La Tulipe ,  David Rath ,  Chih-Chao Yang

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/76811 ,  H01L21/02063 ,  H01L21/76814 ,  H01L21/76835

    摘要： The present invention relates to methods for post-etch, particularly post-RIE, removal of fluorocarbon-based residues from a hybrid dielectric structure. The hybrid dielectric structure contains a first dielectric material, and a line-level dielectric layer containing a second, different dielectric material, and wherein said second, different dielectric material comprises a polymeric thermoset dielectric material having a dielectric constant less than 4. Low energy electron beam or low temperature annealing is utilized by the present invention for removal of the fluorocarbon-based residues from such a hybrid dielectric structure, without damaging the low-k polymeric thermoset dielectric material contained in such a hybrid dielectric structure.

    摘要翻译： 本发明涉及用于从混合电介质结构去除基于碳氟化合物的残留物的后蚀刻，特别是后RIE的方法。 混合电介质结构包含第一电介质材料和含有第二不同介电材料的线路级介电层，并且其中所述第二不同介电材料包含介电常数小于4的聚合物热固性介电材料。低能电子 本发明使用光束或低温退火来从这种混合电介质结构中除去基于碳氟化合物的残留物，而不会损坏这种混合电介质结构中所含的低k聚合物热固性介电材料。