公开(公告)号：US20130069241A1

公开(公告)日：2013-03-21

申请号：US13236952

申请日：2011-09-20

申请人： Yaojian Lin ,  Rui Huang ,  Heap Hoe Kuan ,  Seng Guan Chow

发明人： Yaojian Lin ,  Rui Huang ,  Heap Hoe Kuan ,  Seng Guan Chow

IPC分类号： H01L21/60 ,  H01L21/56 ,  H01L23/48

CPC分类号： H01L21/561 ,  H01L21/6835 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/49816 ,  H01L23/562 ,  H01L24/16 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L24/97 ,  H01L2221/68345 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48237 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/82385 ,  H01L2224/83005 ,  H01L2224/83191 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/19105 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2224/92247 ,  H01L2924/00012 ,  H01L2224/83 ,  H01L2224/85 ,  H01L2924/0665 ,  H01L2224/05599 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device has a first insulating layer formed over a carrier. A first conductive layer is formed over the first insulating layer. A second insulating layer is formed over the first conductive layer. Vias are formed through the second insulating layer. A second conductive layer is formed over the second insulating layer and extends into the vias. A semiconductor die is mounted to the second conductive layer. A bond wire is formed between a contact pad on the semiconductor die and the second conductive layer. The second conductive layer extends to a mounting site of the semiconductor die to minimize the bond wire span. An encapsulant is deposited over the semiconductor die. A portion of the first insulating layer is removed to expose the second conductive layer. A portion of the first conductive layer is removed to electrically isolate remaining portions of the first conductive layer.

摘要翻译： 半导体器件具有形成在载体上的第一绝缘层。 在第一绝缘层上形成第一导电层。 在第一导电层上形成第二绝缘层。 通过第二绝缘层形成通孔。 第二导电层形成在第二绝缘层上并延伸到通孔中。 半导体管芯安装到第二导电层。 在半导体管芯上的接触焊盘和第二导电层之间形成接合线。 第二导电层延伸到半导体管芯的安装位置，以使接合线跨距最小化。 密封剂沉积在半导体管芯上。 去除第一绝缘层的一部分以露出第二导电层。 去除第一导电层的一部分以电隔离第一导电层的剩余部分。

公开(公告)号：US08368188B2

公开(公告)日：2013-02-05

申请号：US12912728

申请日：2010-10-26

申请人： Byung Tai Do ,  Heap Hoe Kuan ,  Rui Huang

发明人： Byung Tai Do ,  Heap Hoe Kuan ,  Rui Huang

IPC分类号： H01L23/495

CPC分类号： H01L23/49548 ,  H01L21/568 ,  H01L23/3135 ,  H01L23/4334 ,  H01L23/49575 ,  H01L24/48 ,  H01L24/97 ,  H01L2224/32245 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01076 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/18165 ,  H01L2924/3025 ,  H01L2224/85 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A method for manufacturing an integrated circuit package system includes: providing an integrated circuit; mounting a lead on the periphery of the integrated circuit; connecting the integrated circuit to the lead with an interconnect; and forming a conformable material by pressing the conformable material on the integrated circuit, the lead, and the interconnect.

摘要翻译： 一种用于制造集成电路封装系统的方法，包括：提供集成电路; 在集成电路的外围安装引线; 通过互连将集成电路连接到引线; 以及通过在集成电路，引线和互连上按压适形材料来形成适形材料。

公开(公告)号：US08304880B2

公开(公告)日：2012-11-06

申请号：US12881983

申请日：2010-09-14

申请人： Seng Guan Chow ,  Hin Hwa Goh ,  Rui Huang ,  Heap Hoe Kuan

发明人： Seng Guan Chow ,  Hin Hwa Goh ,  Rui Huang ,  Heap Hoe Kuan

IPC分类号： H01L23/02

CPC分类号： H01L21/563 ,  H01L24/16 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2225/06558 ,  H01L2225/06568 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2225/1094 ,  H01L2924/00014 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A method of manufacture of an integrated circuit packaging system includes: providing a bottom substrate; mounting a bottom integrated circuit over the bottom substrate; mounting a top substrate over a side of the bottom integrated circuit opposite the bottom substrate; connecting a top interconnect between the bottom substrate and the top substrate; and forming an underfill layer between the bottom substrate and the top substrate, the underfill layer encapsulating the top interconnect outside a perimeter of the bottom integrated circuit.

摘要翻译： 一种集成电路封装系统的制造方法，包括：提供底部基板; 将底部集成电路安装在底部基板上; 在底部集成电路的与底部基板相对的一侧上安装顶部基板; 连接底部基板和顶部基板之间的顶部互连; 并且在底部基板和顶部基板之间形成底部填充层，底部填充层将顶部互连件封装在底部集成电路的周边外部。

公开(公告)号：US08299596B2

公开(公告)日：2012-10-30

申请号：US12968257

申请日：2010-12-14

申请人： Rui Huang ,  Seng Guan Chow ,  Heap Hoe Kuan

发明人： Rui Huang ,  Seng Guan Chow ,  Heap Hoe Kuan

IPC分类号： H01L23/02

CPC分类号： H01L25/105 ,  H01L24/73 ,  H01L25/50 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/3025 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/0401

摘要： A method of manufacture of an integrated circuit packaging system includes: providing a base substrate having a component side; mounting a base device having a base circuit connector directly on the component side; attaching conformal interconnects, having the same pre-deformation height from the component side, directly on the component side and offset from the base device; and attaching a stack substrate having stack interconnects directly on the conformal interconnects, portions of the stack interconnects covered by the conformal interconnects having different deformation heights from the component side.

摘要翻译： 一种集成电路封装系统的制造方法，包括：提供具有元件侧的基底基板; 将具有基座电路连接器的基座装置直接安装在部件侧; 将与构件侧具有相同的预变形高度的共形互连件直接连接在元件侧并偏离基座装置; 以及将具有堆叠互连的堆叠衬底直接附接在所述共形互连上，所述堆叠互连的由组件侧具有不同变形高度的共形互连覆盖的部分。

公开(公告)号：US20120139120A1

公开(公告)日：2012-06-07

申请号：US12961260

申请日：2010-12-06

申请人： Seng Guan Chow ,  Lee Sun Lim ,  Rui Huang ,  Xusheng Bao ,  Ma Phoo Pwint Hlaing

发明人： Seng Guan Chow ,  Lee Sun Lim ,  Rui Huang ,  Xusheng Bao ,  Ma Phoo Pwint Hlaing

IPC分类号： H01L23/28 ,  H01L21/56

CPC分类号： H01L23/3121 ,  H01L21/561 ,  H01L23/3128 ,  H01L24/19 ,  H01L24/96 ,  H01L2224/12105 ,  H01L2224/24137 ,  H01L2924/00013 ,  H01L2924/01029 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/18162 ,  H01L2924/3511 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device has a plurality of semiconductor die mounted active surface to a carrier. An encapsulant is deposited over semiconductor die and carrier. Openings are formed through a surface of the encapsulant to divide the encapsulant into discontinuous segments. The openings have straight or beveled sidewalls. The openings can be formed partially through the surface of the encapsulant in an area between the semiconductor die. The openings can be formed partially through the surface of the encapsulant over the semiconductor die. The openings can be formed through the encapsulant in an area between the semiconductor die. A portion of the surface of the encapsulant is removed down to a bottom of the openings. The carrier is removed. An interconnect structure is formed over the encapsulant and the semiconductor die. The encapsulant is cured prior to or after forming the openings.

摘要翻译： 半导体器件具有多个半导体管芯安装到载体的有源表面。 密封剂沉积在半导体管芯和载体上。 开口通过密封剂的表面形成，以将密封剂分成不连续的段。 开口具有直的或斜面的侧壁。 可以在半导体管芯之间的区域中部分地通过密封剂的表面形成开口。 开口可以部分地通过半导体管芯上的密封剂的表面形成。 可以在半导体管芯之间的区域中通过密封剂形成开口。 密封剂的表面的一部分被移除到开口的底部。 载体被移除。 在密封剂和半导体管芯上形成互连结构。 密封剂在形成开口之前或之后固化。

公开(公告)号：US20120112340A1

公开(公告)日：2012-05-10

申请号：US13333739

申请日：2011-12-21

申请人： Yaojian Lin ,  Pandi C. Marimuthu ,  Kang Chen ,  Hin Hwa Goh ,  Yu Gu ,  Il Kwon Shim ,  Rui Huang ,  Seng Guan Chow ,  Jianmin Fang ,  Xia Feng

发明人： Yaojian Lin ,  Pandi C. Marimuthu ,  Kang Chen ,  Hin Hwa Goh ,  Yu Gu ,  Il Kwon Shim ,  Rui Huang ,  Seng Guan Chow ,  Jianmin Fang ,  Xia Feng

IPC分类号： H01L23/52 ,  H01L21/56 ,  H01L21/78

CPC分类号： H01L23/3114 ,  H01L21/31 ,  H01L21/56 ,  H01L21/568 ,  H01L21/768 ,  H01L21/76877 ,  H01L21/78 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/49816 ,  H01L23/522 ,  H01L23/528 ,  H01L23/5389 ,  H01L23/562 ,  H01L24/19 ,  H01L24/20 ,  H01L24/94 ,  H01L24/96 ,  H01L24/97 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2224/94 ,  H01L2224/96 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01043 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10156 ,  H01L2924/10157 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/3511 ,  H01L2224/19 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/03 ,  H01L2924/00012 ,  H01L2224/214

摘要： A semiconductor device has a semiconductor die and conductive layer formed over a surface of the semiconductor die. A first channel can be formed in the semiconductor die. An encapsulant is deposited over the semiconductor die. A second channel can be formed in the encapsulant. A first insulating layer is formed over the semiconductor die and first conductive layer and into the first channel. The first insulating layer extends into the second channel. The first insulating layer has characteristics of tensile strength greater than 150 MPa, elongation between 35-150%, and thickness of 2-30 micrometers. A second insulating layer can be formed over the semiconductor die prior to forming the first insulating layer. An interconnect structure is formed over the semiconductor die and encapsulant. The interconnect structure is electrically connected to the first conductive layer. The first insulating layer provides stress relief during formation of the interconnect structure.

摘要翻译： 半导体器件具有形成在半导体管芯的表面上的半导体管芯和导电层。 可以在半导体管芯中形成第一通道。 密封剂沉积在半导体管芯上。 可以在密封剂中形成第二通道。 在半导体管芯和第一导电层上形成第一绝缘层并进入第一沟道。 第一绝缘层延伸到第二通道中。 第一绝缘层的拉伸强度大于150MPa，伸长率在35-150％之间，厚度为2-30微米。 在形成第一绝缘层之前，可以在半导体管芯上方形成第二绝缘层。 在半导体管芯和密封剂上形成互连结构。 互连结构电连接到第一导电层。 第一绝缘层在形成互连结构期间提供应力释放。

公开(公告)号：US20120104599A1

公开(公告)日：2012-05-03

申请号：US13335867

申请日：2011-12-22

申请人： Byung Tai Do ,  Seng Guan Chow ,  Heap Hoe Kuan ,  Linda Pei Ee Chua ,  Rui Huang

发明人： Byung Tai Do ,  Seng Guan Chow ,  Heap Hoe Kuan ,  Linda Pei Ee Chua ,  Rui Huang

IPC分类号： H01L23/498 ,  H01L23/48

CPC分类号： H01L24/19 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3107 ,  H01L23/50 ,  H01L23/5389 ,  H01L24/48 ,  H01L24/73 ,  H01L25/03 ,  H01L25/105 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2224/04105 ,  H01L2224/20 ,  H01L2224/211 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/18162 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor wafer is made by forming a first conductive layer over a sacrificial substrate, mounting a semiconductor die to the sacrificial substrate, depositing an insulating layer over the semiconductor die and first conductive layer, exposing the first conductive layer and contact pad on the semiconductor die, forming a second conductive layer over the insulating layer between the first conductive layer and contact pad, forming solder bumps on the second conductive layer, depositing an encapsulant over the semiconductor die, first conductive layer, and interconnect structure, and removing the sacrificial substrate after forming the encapsulant to expose the conductive layer and semiconductor die. A portion of the encapsulant is removed to expose a portion of the solder bumps. The solder bumps are sized so that each extends the same outside the encapsulant. The semiconductor die are stacked by electrically connecting the solder bumps.

摘要翻译： 通过在牺牲衬底上形成第一导电层，将半导体管芯安装到牺牲衬底上，在半导体管芯和第一导电层上方沉积绝缘层，暴露半导体管芯上的第一导电层和接触焊盘来制造半导体晶片 在所述第一导电层和所述接触焊盘之间的所述绝缘层之上形成第二导电层，在所述第二导电层上形成焊料凸块，在所述半导体管芯上方沉积密封剂，所述第一导电层和互连结构， 形成密封剂以暴露导电层和半导体管芯。 去除一部分密封剂以露出焊料凸块的一部分。 焊料凸块的尺寸设计成使得每个焊料凸块在封装体外均延伸。 通过电连接焊料凸块来堆叠半导体管芯。

公开(公告)号：US08163597B2

公开(公告)日：2012-04-24

申请号：US12410312

申请日：2009-03-24

申请人： Rui Huang ,  Heap Hoe Kuan ,  Yaojian Lin ,  Seng Guan Chow

发明人： Rui Huang ,  Heap Hoe Kuan ,  Yaojian Lin ,  Seng Guan Chow

IPC分类号： H01L21/44 ,  H01L21/48

CPC分类号： H01L25/105 ,  H01L21/561 ,  H01L21/568 ,  H01L23/3128 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/19 ,  H01L24/32 ,  H01L24/81 ,  H01L24/96 ,  H01L24/97 ,  H01L25/03 ,  H01L25/0657 ,  H01L2224/0401 ,  H01L2224/1134 ,  H01L2224/12105 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/81203 ,  H01L2224/81205 ,  H01L2224/81801 ,  H01L2224/92 ,  H01L2224/96 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06582 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2224/82 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2224/11 ,  H01L2224/03

摘要： A semiconductor device is made by forming a conductive layer over a first sacrificial carrier. A solder bump is formed over the conductive layer. A no-flow underfill material is deposited over the first carrier, conductive layer, and solder bump. A semiconductor die or component is compressed into the no-flow underfill material to electrically contact the conductive layer. A surface of the no-flow underfill material and first solder bump is planarized. A first interconnect structure is formed over a first surface of the no-flow underfill material. The first interconnect structure is electrically connected to the solder bump. A second sacrificial carrier is mounted over the first interconnect structure. A second interconnect structure is formed over a second side of the no-flow underfill material. The second interconnect structure is electrically connected to the first solder bump. The semiconductor devices can be stacked and electrically connected through the solder bump.

摘要翻译： 通过在第一牺牲载体上形成导电层制成半导体器件。 在导电层上形成焊料凸块。 在第一载体，导电层和焊料凸块上沉积无流动的底部填充材料。 将半导体管芯或部件压缩成无流动底部填充材料以与导电层电接触。 无流动底部填充材料和第一焊料凸块的表面被平坦化。 第一互连结构形成在无流动底部填充材料的第一表面上。 第一互连结构电连接到焊料凸块。 第二牺牲载体安装在第一互连结构上。 第二互连结构形成在无流动底部填充材料的第二侧上。 第二互连结构电连接到第一焊料凸块。 半导体器件可以通过焊料凸块堆叠和电连接。

公开(公告)号：US08049314B2

公开(公告)日：2011-11-01

申请号：US12126684

申请日：2008-05-23

申请人： Byung Tai Do ,  Seng Guan Chow ,  Heap Hoe Kuan ,  Linda Pei Ee Chua ,  Rui Huang

发明人： Byung Tai Do ,  Seng Guan Chow ,  Heap Hoe Kuan ,  Linda Pei Ee Chua ,  Rui Huang

IPC分类号： H01L23/495 ,  H01L21/58

CPC分类号： H01L23/49548 ,  H01L21/568 ,  H01L23/3135 ,  H01L23/4334 ,  H01L23/49575 ,  H01L24/48 ,  H01L24/97 ,  H01L2224/32245 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01076 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/18165 ,  H01L2924/3025 ,  H01L2224/85 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： An integrated circuit package system includes: providing a connection array; attaching a base integrated circuit adjacent the connection array; attaching a package integrated circuit over the base integrated circuit; attaching a package die connector to the package integrated circuit and the connection array; and applying a wire-in-film insulator over the package integrated circuit, the package die connector, the base integrated circuit, and the connection array, wherein the connection array is partially exposed.

摘要翻译： 集成电路封装系统包括：提供连接阵列; 将基座集成电路附接在连接阵列附近; 将封装集成电路连接到基极集成电路上; 将封装管芯连接器附接到封装集成电路和连接阵列; 以及在封装集成电路，封装管芯连接器，基底集成电路和连接阵列上施加线内绝缘体，其中连接阵列部分暴露。

公开(公告)号：US08039311B2

公开(公告)日：2011-10-18

申请号：US12205841

申请日：2008-09-05

申请人： Heap Hoe Kuan ,  Rui Huang ,  Seng Guan Chow

发明人： Heap Hoe Kuan ,  Rui Huang ,  Seng Guan Chow

IPC分类号： H01L21/00

CPC分类号： H01L21/6835 ,  H01L21/4853 ,  H01L21/568 ,  H01L23/3107 ,  H01L23/49541 ,  H01L23/49816 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/85 ,  H01L25/105 ,  H01L2221/68345 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48195 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48471 ,  H01L2224/73265 ,  H01L2224/85001 ,  H01L2225/1023 ,  H01L2225/1052 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18165 ,  H01L2924/19107 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor package system includes: providing a semiconductor die with bonding pad on the semiconductor die; attaching the semiconductor die to an intermediate layer; attaching one end of a bonding wire to the bonding pad; forming a bonding ball at the other end of the bonding wire, the bonding ball being fully or partially embedded in the intermediate layer; encapsulating the semiconductor die, the bonding pad, the bonding wire, and a portion of the bonding ball with a mold compound; removing the intermediate layer, resulting in the bonding ball protruding from the exposed mold compound bottom surface; and conditioning the bonding ball.

摘要翻译： 半导体封装系统包括：在半导体管芯上提供具有焊盘的半导体管芯; 将半导体管芯附接到中间层; 将接合线的一端附接到所述接合焊盘; 在接合线的另一端形成接合球，接合球完全或部分地嵌入在中间层中; 用模具化合物封装半导体管芯，接合焊盘，接合线和接合球的一部分; 去除中间层，导致接合球从露出的模塑复合物底表面突出; 并调节粘结球。