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    Semiconductor wafer for semiconductor components and production method
    21.
    发明授权
    Semiconductor wafer for semiconductor components and production method 有权
    半导体晶圆半导体元件及生产方法

    公开(公告)号：US08349646B2

    公开(公告)日：2013-01-08

    申请号：US12949332

    申请日：2010-11-18

    申请人： Hans-Joachim Schulze

    发明人： Hans-Joachim Schulze

    IPC分类号： H01L21/322 ,  H01L21/06

    CPC分类号： H01L21/3225 ,  H01L21/2254 ,  H01L21/26506

    摘要： A semiconductor wafer for semiconductor components and to a method for its production is disclosed. In one embodiment, the semiconductor wafer includes a front side with an adjoining near-surface active zone as basic material for semiconductor component structures. The rear side of the semiconductor wafer is adjoined by a getter zone for gettering impurity atoms in the semiconductor wafer. The getter zone contains oxygen precipitates. In the near-surface active zone, atoms of doping material are located on lattice vacancies. The atoms of doping material have a higher diffusion coefficient that the oxygen atoms.

    摘要翻译： 公开了一种用于半导体部件的半导体晶片及其制造方法。 在一个实施例中，半导体晶片包括具有邻近的近表面活性区的前侧，作为半导体元件结构的基本材料。 半导体晶片的后侧与用于吸收半导体晶片中的杂质原子的吸气区相邻。 吸气区包含氧沉淀。 在近表面活性区，掺杂材料的原子位于晶格空位上。 掺杂原子具有较高的扩散系数，即氧原子。

    SEMICONDUCTOR DEVICE HAVING A FLOATING SEMICONDUCTOR ZONE
    22.
    发明申请
    SEMICONDUCTOR DEVICE HAVING A FLOATING SEMICONDUCTOR ZONE 有权
    具有浮动半导体区域的半导体器件

    公开(公告)号：US20130001640A1

    公开(公告)日：2013-01-03

    申请号：US13610240

    申请日：2012-09-11

    申请人： Frank Pfirsch ,  Maria Cotorogea ,  Franz Hirler ,  Franz-Josef Niedernostheide ,  Thomas Raker ,  Hans-Joachim Schulze ,  Hans Peter Felsl

    发明人： Frank Pfirsch ,  Maria Cotorogea ,  Franz Hirler ,  Franz-Josef Niedernostheide ,  Thomas Raker ,  Hans-Joachim Schulze ,  Hans Peter Felsl

    IPC分类号： H01L29/739

    CPC分类号： H01L29/7813 ,  H01L29/0619 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/7397

    摘要： A semiconductor device includes a first trench and a second trench extending into a semiconductor body from a surface. A body region of a first conductivity type adjoins a first sidewall of the first trench and a first sidewall of the second trench, the body region including a channel portion adjoining to a source structure and being configured to be controlled in its conductivity by a gate structure. The channel portion is formed at the first sidewall of the second trench and is not formed at the first sidewall of the first trench. An electrically floating semiconductor zone of the first conductivity type adjoins the first trench and has a bottom side located deeper within the semiconductor body than the bottom side of the body region.

    摘要翻译： 半导体器件包括从表面延伸到半导体本体中的第一沟槽和第二沟槽。 第一导电类型的主体区域邻接第一沟槽的第一侧壁和第二沟槽的第一侧壁，主体区域包括邻近源极结构的沟道部分，并且被配置为通过栅极结构来控制其导电性 。 通道部分形成在第二沟槽的第一侧壁处，并且不形成在第一沟槽的第一侧壁处。 第一导电类型的电浮动半导体区域邻接第一沟槽，并且具有位于半导体本体内比底体区域的底侧更深的底侧。

    Power semiconductor component having a gentle turn-off behavior
    25.
    发明授权
    Power semiconductor component having a gentle turn-off behavior 有权
    功率半导体元件具有温和的关断特性

    公开(公告)号：US08269270B2

    公开(公告)日：2012-09-18

    申请号：US11016963

    申请日：2004-12-20

    申请人： Anton Mauder ,  Hans-Joachim Schulze

    发明人： Anton Mauder ,  Hans-Joachim Schulze

    IPC分类号： H01L29/76

    CPC分类号： H01L29/402 ,  H01L29/0834 ,  H01L29/7395 ,  H01L29/861

    摘要： A vertical semiconductor component having a semiconductor body, which has an inner region and an edge region that is arranged between the inner region and an edge of the semiconductor body. At least one semiconductor junction between a first semiconductor zone of a first conduction type, said first semiconductor zone being arranged in the region of a first side of the semiconductor body in the inner region, and a second semiconductor zone of the second conduction type, said second semiconductor zone adjoining the first semiconductor zone in the vertical direction. A contiguous third semiconductor zone of the second conduction type, said third semiconductor zone being arranged at a distance from the first semiconductor zone in the second semiconductor zone in the vertical direction of the semiconductor body and extending as far as the edge region in the lateral direction of the semiconductor body, and the doping of the third semiconductor zone being selected in such a manner that it is completely depleted of charge carriers when a reverse voltage is applied to the pn junction.

    摘要翻译： 一种具有半导体本体的垂直半导体部件，其具有布置在半导体本体的内部区域和边缘之间的内部区域和边缘区域。 在第一导电类型的第一半导体区域之间的至少一个半导体结，所述第一半导体区域布置在所述内部区域中的所述半导体本体的第一侧的区域中，以及所述第二导电类型的第二半导体区域， 第二半导体区在垂直方向上邻接第一半导体区。 第二导电类型的连续的第三半导体区域，所述第三半导体区域在半导体本体的垂直方向上与所述第二半导体区域中的所述第一半导体区域一定距离设置，并且在横向方向上延伸至所述边缘区域 并且以这样的方式选择第三半导体区域的掺杂，使得当向pn结施加反向电压时，其完全耗尽电荷载流子。

    Semiconductor device and fabrication method
    27.
    发明授权
    Semiconductor device and fabrication method 有权
    半导体器件及其制造方法

    公开(公告)号：US08252671B2

    公开(公告)日：2012-08-28

    申请号：US13186470

    申请日：2011-07-20

    申请人： Anton Mauder ,  Hans-Joachim Schulze ,  Frank Hille ,  Holger Schulze ,  Manfred Pfaffenlehner ,  Carsten Schaeffer ,  Franz-Josef Niedernostheide

    发明人： Anton Mauder ,  Hans-Joachim Schulze ,  Frank Hille ,  Holger Schulze ,  Manfred Pfaffenlehner ,  Carsten Schaeffer ,  Franz-Josef Niedernostheide

    IPC分类号： H01L21/425

    CPC分类号： H01L29/861 ,  H01L21/263 ,  H01L21/265 ,  H01L29/36 ,  H01L29/66136 ,  H01L29/66333 ,  H01L29/7395

    摘要： A semiconductor device in one embodiment has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region.

    摘要翻译： 一个实施例中的半导体器件具有布置在第一和第二连接区域之间的第一连接区域，第二连接区域和半导体体积。 在第二连接区域的附近，在半导体体积中形成空间电荷区域的场停止区域以及与第一连接区域相邻的阳极区域在半导体体积内设置。 半导体体积内的掺杂剂浓度分布被配置为使得从第二连接区域的面对第二连接区域的阳极区域的界面开始，离子化掺杂剂在半导体体积上的电荷积分到达第二连接区域的方向 与半导体器件的击穿电荷相对应的电荷量仅在靠近第二连接区域的场停止区的界面附近。

    Semiconductor device including semiconductor zones and manufacturing method
    28.
    发明授权
    Semiconductor device including semiconductor zones and manufacturing method 有权
    包括半导体区的半导体器件和制造方法

    公开(公告)号：US08183666B2

    公开(公告)日：2012-05-22

    申请号：US12608196

    申请日：2009-10-29

    申请人： Hans-Joachim Schulze

    发明人： Hans-Joachim Schulze

    IPC分类号： H01L29/06

    CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/0649 ,  H01L29/0696 ,  H01L29/167 ,  H01L29/36 ,  H01L29/41766 ,  H01L29/41775 ,  H01L29/7816 ,  Y10S257/901

    摘要： A semiconductor device includes first semiconductor zones of a first conductivity type having a first dopant species of the first conductivity type and a second dopant species of a second conductivity type different from the first conductivity type. The semiconductor device also includes second semiconductor zones of the second conductivity type including the second dopant species. The first and second semiconductor zones are alternately arranged in contact with each other along a lateral direction extending in parallel to a surface of a semiconductor body. One of the first and second semiconductor zones constitute drift zones and a diffusion coefficient of the second dopant species is at least twice as large as the diffusion coefficient of the first dopant species. A concentration profile of the first dopant species along a vertical direction perpendicular to the surface of the semiconductor body includes at least two maxima.

    摘要翻译： 半导体器件包括具有第一导电类型的第一掺杂物种类的第一导电类型的第一半导体区域和不同于第一导电类型的第二导电类型的第二掺杂物种类。 半导体器件还包括第二导电类型的第二半导体区，包括第二掺杂物种。 第一半导体区域和第二半导体区域沿着与半导体本体的表面平行延伸的横向方向彼此交替布置。 第一和第二半导体区域中的一个构成漂移区，并且第二掺杂物种类的扩散系数至少是第一掺杂剂物质的扩散系数的两倍。 垂直于半导体本体表面的垂直方向的第一掺杂剂物质的浓度分布包括至少两个最大值。

    Robust semiconductor device with an emitter zone and a field stop zone
    29.
    发明授权
    Robust semiconductor device with an emitter zone and a field stop zone 有权
    坚固的半导体器件，具有发射极区域和场停止区域

    公开(公告)号：US08159022B2

    公开(公告)日：2012-04-17

    申请号：US12241910

    申请日：2008-09-30

    申请人： Hans-Joachim Schulze ,  Manfred Pfaffenlehner

    发明人： Hans-Joachim Schulze ,  Manfred Pfaffenlehner

    IPC分类号： H01L29/76

    CPC分类号： H01L29/7395 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0834 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/66333

    摘要： A power semiconductor component is described. One embodiment provides a semiconductor body having an inner zone and an edge zone. A base zone of a first conduction type is provided. The base zone is arranged in the at least one inner zone and the at least one edge zone. An emitter zone of a second conduction type is provided. The emitter zone is arranged adjacent to the base zone in a vertical direction of the semiconductor body. A field stop zone of the first conduction type is provided. The field stop zone is arranged in the base zone and has a first field stop zone section having a first dopant dose in the edge zone and a second field stop zone section having a second dopant dose in the inner zone. The first dopant dose is higher than the second dopant dose.

    摘要翻译： 描述功率半导体部件。 一个实施例提供了具有内部区域和边缘区域的半导体本体。 提供第一导电类型的基区。 基部区域布置在至少一个内部区域和至少一个边缘区域中。 提供了第二导电类型的发射极区。 发射极区域在半导体本体的垂直方向上邻近基极区域布置。 提供第一导电类型的场停止区。 场停止区域布置在基区中并且具有在边缘区域中具有第一掺杂剂剂量的第一场停止区段区段和在内区域具有第二掺杂剂剂量的第二场停止区段区段。 第一掺杂剂剂量高于第二掺杂剂剂量。