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    Yttrium and titanium high-k dielectric films
    21.
    发明授权
    Yttrium and titanium high-k dielectric films 有权
    钇和钛高k电介质膜

    公开(公告)号：US08900418B2

    公开(公告)日：2014-12-02

    申请号：US13677126

    申请日：2012-11-14

    Applicant: Intermolecular, Inc.

    Inventor： Imran Hashim ,  Hanhong Chen ,  Tony Chiang ,  Indranil De ,  Nobi Fuchigami ,  Edward Haywood ,  Pragati Kumar ,  Sandra Malhotra ,  Sunil Shanker

    IPC: C23C14/34 ,  B05D5/12 ,  H01L49/02 ,  C23C16/40 ,  C23C16/455 ,  H01L21/314 ,  H01L21/316 ,  H01L27/108 ,  H01L21/02

    CPC classification number: H01L28/65 ,  C23C16/405 ,  C23C16/45529 ,  C23C16/45531 ,  H01L21/02697 ,  H01L21/3141 ,  H01L21/31604 ,  H01L27/10852 ,  H01L28/40

    Abstract: This disclosure provides (a) methods of making an oxide layer (e.g., a dielectric layer) based on yttrium and titanium, to have a high dielectric constant and low leakage characteristic and (b) related devices and structures. An oxide layer having both yttrium and titanium may be fabricated either as an amorphous oxide or as an alternating series of monolayers. In several embodiments, the oxide is characterized by a yttrium contribution to total metal that is specifically controlled. The oxide layer can be produced as the result of a reactive process, if desired, via either a PVD process or, alternatively, via an atomic layer deposition process that employs specific precursor materials to allow for a common process temperature window for both titanium and yttrium reactions.

    Abstract translation: 本公开内容提供（a）制造基于钇和钛的氧化物层（例如电介质层）的方法，以具有高介电常数和低泄漏特性，以及（b）相关的器件和结构。 具有钇和钛的氧化物层可以制成无定形氧化物或交替的单层系列。 在几个实施方案中，氧化物的特征在于对特定控制的总金属的钇贡献。 如果需要，可以通过PVD工艺或者通过使用特定的前体材料以允许钛和钇的共同工艺温度窗口的原子层沉积工艺，作为反应过程的结果来生产氧化物层 反应。

    Titanium based high-K dielectric films
    22.
    发明授权
    Titanium based high-K dielectric films 有权
    钛基高K电介质膜

    公开(公告)号：US08737036B2

    公开(公告)日：2014-05-27

    申请号：US13657782

    申请日：2012-10-22

    Applicant: Intermolecular, Inc.

    Inventor： Hanhong Chen ,  Nobumichi Fuchigami ,  Imran Hashim ,  Edward L. Haywood ,  Pragati Kumar ,  Sandra G. Malhotra ,  Monica Sawkar Mathur ,  Prashant B. Phatak ,  Sunil Shanker

    IPC: H01G4/30

    CPC classification number: H01G4/1218 ,  C23C16/405 ,  C23C16/45531 ,  C23C16/56 ,  H01G4/33 ,  H01L21/02186 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/02312 ,  H01L21/02337 ,  H01L21/3141 ,  H01L21/3142 ,  H01L28/40

    Abstract: This disclosure provides (a) methods of making an oxide layer (e.g., a dielectric layer) based on titanium oxide, to suppress the formation of anatase-phase titanium oxide and (b) related devices and structures. A metal-insulator-metal (“MIM”) stack is formed using an ozone pretreatment process of a bottom electrode (or other substrate) followed by an ALD process to form a TiO2 dielectric, rooted in the use of an amide-containing precursor. Following the ALD process, an oxidizing anneal process is applied in a manner is hot enough to heal defects in the TiO2 dielectric and reduce interface states between TiO2 and electrode; the anneal temperature is selected so as to not be so hot as to disrupt BEL surface roughness. Further process variants may include doping the titanium oxide, pedestal heating during the ALD process to 275-300 degrees Celsius, use of platinum or ruthenium for the BEL, and plural reagent pulses of ozone for each ALD process cycle. The process provides high deposition rates, and the resulting MIM structure has substantially no x-ray diffraction peaks associated with anatase-phase titanium oxide.

    Abstract translation: 本公开内容提供（a）制造基于氧化钛的氧化物层（例如电介质层）的方法，以抑制锐钛矿相氧化钛的形成和（b）相关的器件和结构。 使用底部电极（或其他基底）的臭氧预处理随后进行ALD工艺来形成金属 - 绝缘体 - 金属（“MIM”）堆叠，以形成根植于使用含酰胺的前体的TiO 2电介质。 在ALD工艺之后，氧化退火工艺的应用热度足以愈合TiO2电介质中的缺陷，并降低TiO2和电极之间的界面态; 选择退火温度以使其不那么热，以致破坏BEL表面粗糙度。 进一步的工艺变型可以包括在ALD工艺期间掺杂氧化钛，基座加热至275-300摄氏度，对于BEL使用铂或钌，对于每个ALD工艺循环使用多个试剂脉冲的臭氧。 该方法提供高沉积速率，并且所得MIM结构基本上没有与锐钛矿相氧化钛相关的x射线衍射峰。

    Inexpensive electrode materials to facilitate rutile phase titanium oxide
    23.
    发明申请
    Inexpensive electrode materials to facilitate rutile phase titanium oxide 审中-公开

    公开(公告)号：US20130037913A1

    公开(公告)日：2013-02-14

    申请号：US13655653

    申请日：2012-10-19

    Applicant: INTERMOLECULAR INC.

    Inventor： Hanhong Chen ,  Toshiyuki Hirota ,  Pragati KUMAR ,  Xiangxin Rui ,  Sunil Shanker

    IPC: H01L29/02

    CPC classification number: H01L28/60 ,  C23C16/405 ,  H01L27/10852 ,  H01L28/40

    Abstract: This disclosure provides a method of fabricating a semiconductor stack and associated device, such as a capacitor and DRAM cell. In particular, a bottom electrode has a material selected for lattice matching characteristics. This material may be created from a relatively inexpensive metal oxide which is processed to adopt a conductive, but difficult-to-produce oxide state, with specific crystalline form; to provide one example, specific materials are disclosed that are compatible with the growth of rutile phase titanium dioxide (TiO2) for use as a dielectric, thereby leading to predictable and reproducible higher dielectric constant and lower effective oxide thickness and, thus, greater part density at lower cost.

    Combinatorial Site Isolated Plasma Assisted Deposition
    25.
    发明申请
    Combinatorial Site Isolated Plasma Assisted Deposition 审中-公开
    组合场隔离等离子体辅助沉积

    公开(公告)号：US20140134849A1

    公开(公告)日：2014-05-15

    申请号：US13672840

    申请日：2012-11-09

    Applicant: INTERMOLECULAR INC.

    Inventor： Sandip Niyogi ,  Owen Ho Yin Fong ,  Sunil Shanker ,  ShouQian Shao ,  Jingang Su ,  J. Watanabe ,  Wenxian Zhu

    IPC: C23C16/458 ,  H01L21/02

    CPC classification number: C23C16/04 ,  C23C16/4584

    Abstract: An apparatus that includes a base, a sidewall extending from the base, and a lid disposed over a top of the sidewall is provided. A plasma generating source extends through a surface of the lid. A rotatable substrate support is disposed within the chamber above a surface of the base, the rotatable substrate support operable to vertically translate from the base to the lid. A first fluid inlet extends into a first surface of the sidewall and a second fluid inlet extends into a second surface of the sidewall. The plasma generating source provides a plasma activated species to a region of a surface of a substrate supported on the rotatable substrate support and a fluid delivered proximate to the region from one of the first or the second fluid inlet interacts with the plasma activated species to deposit a layer of material over the region.

    Abstract translation: 提供一种装置，其包括基座，从基座延伸的侧壁和设置在侧壁顶部上的盖。 等离子体产生源延伸穿过盖的表面。 可旋转的基板支撑件设置在基座的表面之上的腔室内，可旋转的基底支撑件可操作以从基座垂直平移到盖子。 第一流体入口延伸到侧壁的第一表面中，并且第二流体入口延伸到侧壁的第二表面中。 等离子体产生源将等离子体激活的物质提供到支撑在可旋转基底支撑件上的基底的表面的区域，并且靠近该区域的流体从第一或第二流体入口中的一个流体与等离子体活化物质相互作用而沉积 在该地区的一层材料。

    Inexpensive Electrode Materials to Facilitate Rutile Phase Titanium Oxide
    26.
    发明申请
    Inexpensive Electrode Materials to Facilitate Rutile Phase Titanium Oxide 有权
    廉价的电极材料促进金红石相氧化钛

    公开(公告)号：US20130072015A1

    公开(公告)日：2013-03-21

    申请号：US13675852

    申请日：2012-11-13

    Applicant: Intermolecular, Inc.

    Inventor： Hanhong Chen ,  Toshiyuki Hirota ,  Pragati Kumar ,  Xiangxin Rui ,  Sunil Shanker

    IPC: H01L21/285

    CPC classification number: H01L28/60 ,  C23C16/405 ,  H01L27/10852 ,  H01L28/40

    Abstract: This disclosure provides a method of fabricating a semiconductor stack and associated device, such as a capacitor and DRAM cell. In particular, a bottom electrode has a material selected for lattice matching characteristics. This material may be created from a relatively inexpensive metal oxide which is processed to adopt a conductive, but difficult-to-produce oxide state, with specific crystalline form; to provide one example, specific materials are disclosed that are compatible with the growth of rutile phase titanium dioxide (TiO2) for use as a dielectric, thereby leading to predictable and reproducible higher dielectric constant and lower effective oxide thickness and, thus, greater part density at lower cost.

    Abstract translation: 本公开提供了制造半导体堆叠和相关设备（诸如电容器和DRAM单元）的方法。 特别地，底部电极具有选择用于晶格匹配特性的材料。 该材料可以由相对廉价的金属氧化物制成，其被处理成具有特定结晶形式的导电但难以产生的氧化物状态; 为了提供一个实例，公开了与用作电介质的金红石相二氧化钛（TiO 2）的生长相容的具体材料，从而导致可预测和可再现的较高介电常数和较低的有效氧化物厚度，因此更大的部分密度 以较低的成本。

    Nonvolatile Memory Elements
    27.
    发明申请
    Nonvolatile Memory Elements 有权
    非易失性存储元件

    公开(公告)号：US20130059427A1

    公开(公告)日：2013-03-07

    申请号：US13656585

    申请日：2012-10-19

    Applicant: Intermolecular, Inc.

    Inventor： Sandra G. Malhotra ,  Sean Barstow ,  Tony P. Chiang ,  Pragati Kumar ,  Prashant B. Phatak ,  Sunil Shanker ,  Wen Wu

    IPC: H01L21/02

    CPC classification number: H01L45/1608 ,  H01L27/2418 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1625 ,  H01L45/1641

    Abstract: Nonvolatile memory elements that are based on resistive switching memory element layers are provided. A nonvolatile memory element may have a resistive switching metal oxide layer. The resistive switching metal oxide layer may have one or more layers of oxide. A resistive switching metal oxide may be doped with a dopant that increases its melting temperature and enhances its thermal stability. Layers may be formed to enhance the thermal stability of the nonvolatile memory element. An electrode for a nonvolatile memory element may contain a conductive layer and a buffer layer.

    Abstract translation: 提供了基于电阻式开关存储元件层的非易失性存储元件。 非易失性存储元件可以具有电阻性开关金属氧化物层。 电阻式开关金属氧化物层可以具有一层或多层氧化物。 电阻式开关金属氧化物可以掺杂有增加其熔融温度并增强其热稳定性的掺杂剂。 可以形成层以增强非易失性存储元件的热稳定性。 用于非易失性存储元件的电极可以包含导电层和缓冲层。

    Method of forming strontium titanate films
    28.
    发明申请
    Method of forming strontium titanate films 审中-公开
    形成钛酸锶薄膜的方法

    公开(公告)号：US20130059066A1

    公开(公告)日：2013-03-07

    申请号：US13658595

    申请日：2012-10-23

    Applicant: Intermolecular, Inc

    Inventor： Xiangxin Rui ,  Iain Buchanan ,  Moo-Sung Kim ,  Xinjian Lei ,  Laura Matz ,  Sunil Shanker

    IPC: B05D5/12

    CPC classification number: C23C16/45531 ,  C23C16/409 ,  H01L21/02197 ,  H01L21/0228 ,  H01L21/02356 ,  H01L21/3142 ,  H01L21/31691 ,  H01L28/56

    Abstract: Embodiments of the current invention include methods of forming a strontium titanate (SrTiO3) film using atomic layer deposition (ALD). More particularly, the method includes forming a plurality of titanium oxide (TiO2) unit films using ALD and forming a plurality of strontium oxide (SrO) unit films using ALD. The combined thickness of the TiO2 and SrO unit films is less than approximately 5 angstroms. The TiO2 and SrO units films are then annealed to form a strontium titanate layer.

    Abstract translation: 本发明的实施方案包括使用原子层沉积（ALD）形成钛酸锶（SrTiO 3）膜的方法。 更具体地说，该方法包括使用ALD形成多个氧化钛（TiO 2）单元膜并使用ALD形成多个氧化锶（SrO）单元膜。 TiO 2和SrO单元膜的组合厚度小于约5埃。 然后将TiO 2和SrO单元膜退火以形成钛酸锶层。

    Methods For Depositing High-K Dielectrics
    29.
    发明申请
    Methods For Depositing High-K Dielectrics 有权
    沉积高K电介质的方法

    公开(公告)号：US20130056852A1

    公开(公告)日：2013-03-07

    申请号：US13668488

    申请日：2012-11-05

    Applicant: Intermolecular, Inc.

    Inventor： Imran Hashim ,  Edward L. Haywood ,  Sandra G. Malhotra ,  Xiangxin Rui ,  Sunil Shanker

    IPC: H01L29/92

    CPC classification number: H01L21/3141 ,  C23C16/02 ,  C23C16/405 ,  H01L21/02186 ,  H01L21/02271 ,  H01L21/02315 ,  H01L21/31604 ,  H01L28/91

    Abstract: Methods for depositing high-K dielectrics are described, including depositing a first electrode on a substrate, wherein the first electrode is chosen from the group consisting of platinum and ruthenium, applying an oxygen plasma treatment to the exposed metal to reduce the contact angle of a surface of the metal, and depositing a titanium oxide layer on the exposed metal using at least one of a chemical vapor deposition process and an atomic layer deposition process, wherein the titanium oxide layer comprises at least a portion rutile titanium oxide.

    Abstract translation: 描述了用于沉积高K电介质的方法，包括在衬底上沉积第一电极，其中第一电极选自铂和钌，对暴露的金属施加氧等离子体处理以减小接触角 并且使用化学气相沉积工艺和原子层沉积工艺中的至少一种在暴露的金属上沉积氧化钛层，其中所述氧化钛层包含至少一部分金红石型氧化钛。

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