公开(公告)号：US20050282373A1

公开(公告)日：2005-12-22

申请号：US11067349

申请日：2005-02-25

申请人： Stefan Bader ,  Berthold Hahn ,  Volker Harle ,  Hans-Jurgen Lugauer ,  Manfred Mundbrod-Vangerow ,  Dominik Eisert

发明人： Stefan Bader ,  Berthold Hahn ,  Volker Harle ,  Hans-Jurgen Lugauer ,  Manfred Mundbrod-Vangerow ,  Dominik Eisert

IPC分类号： H01L27/15 ,  H01L33/00 ,  H01L33/02 ,  H01L33/32 ,  H01L33/40 ,  H01L33/46 ,  H01L21/28

CPC分类号： H01L33/405 ,  H01L27/153 ,  H01L33/0079 ,  H01L33/02 ,  H01L33/22 ,  H01L33/32 ,  H01L33/44 ,  H01L33/46 ,  H01L2924/0002 ,  H01L2924/00

摘要： This invention describes a radiation-emitting semiconductor component based on GaN, whose semiconductor body is made up of a stack of different GaN semiconductor layers (1). The semiconductor body has a first principal surface (3) and a second principal surface (4), with the radiation produced being emitted through the first principal surface (3) and with a reflector (6) being produced on the second principal surface (4). The invention also describes a production method for a semiconductor component pursuant to the invention. An interlayer (9) is first applied to a substrate (8), and a plurality of GaN layers (1) that constitute the semiconductor body of the component are then applied to this. The substrate (8) and the interlayer (9) are then detached and a reflector (6) is produced on a principal surface of the semiconductor body.

摘要翻译： 本发明描述了一种基于GaN的辐射发射半导体元件，其半导体主体由不同GaN半导体层（1）的堆叠构成。 半导体本体具有第一主表面（3）和第二主表面（4），所产生的辐射通过第一主表面（3）发射，反射器（6）在第二主表面（4）上产生 ）。 本发明还描述了根据本发明的半导体部件的制造方法。 首先将中间层（9）施加到基板（8），然后施加构成部件的半导体主体的多个GaN层（1）。 然后分离基板（8）和中间层（9），并且在半导体本体的主表面上产生反射器（6）。

公开(公告)号：US07556974B2

公开(公告)日：2009-07-07

申请号：US11463633

申请日：2006-08-10

申请人： Volker Harle ,  Berthold Hahn ,  Hans-Jurgen Lugauer ,  Helmut Bolay ,  Stefan Bader ,  Dominik Eisert ,  Uwe Strauss ,  Johannes Volkl ,  Ulrich Zehnder ,  Alfred Lell ,  Andreas Weimar

发明人： Volker Harle ,  Berthold Hahn ,  Hans-Jurgen Lugauer ,  Helmut Bolay ,  Stefan Bader ,  Dominik Eisert ,  Uwe Strauss ,  Johannes Volkl ,  Ulrich Zehnder ,  Alfred Lell ,  Andreas Weimar

IPC分类号： H01L21/00

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/3407 ,  H01S5/3408 ,  H01S5/34333

摘要： An optical semiconductor device with a multiple quantum well structure, in which well layers and barrier layers comprising various types of semiconductor layers are alternately layered, in which device well layers (6a) of a first composition based on a nitride semiconductor material with a first electron energy and barrier layers (6b) of a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy are provided, followed, seen in the direction of growth, by a radiation-active quantum well layer (6c), for which the essentially non-radiating well layers (6a) and the barrier layers (6b) arranged in front form a superlattice.

摘要翻译： 具有多量子阱结构的光半导体器件，其中包括各种类型的半导体层的阱层和阻挡层交替层叠，其中基于具有第一电子的氮化物半导体材料的第一组合物的器件阱层（6a） 提供具有与第一电子能量相比更高的电子能量的氮化物半导体材料的第二组合物的能量和势垒层（6b），然后通过辐射活性量子阱层（在生长方向上） 6c），其中布置在前面的基本上不辐射的阱层（6a）和阻挡层（6b）形成超晶格。

公开(公告)号：US07291509B2

公开(公告)日：2007-11-06

申请号：US10835732

申请日：2004-04-30

申请人： Berthold Hahn ,  Volker Harle

发明人： Berthold Hahn ,  Volker Harle

IPC分类号： H01L21/00

CPC分类号： H01L33/007 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647

摘要： A semiconductor material (5) is grown in the windows (4) of a patterned mask layer (3) on a substrate (1). The semiconductor material (5) grows together over the mask layer (3) with semiconductor material (5) from adjacent windows to form a largely planar surface (7), which is suitable for the further growth of a component layer sequence (9). Through the choice of a substrate (1) having a smaller thermal expansion coefficient than the semiconductor material (5), particularly strong tensile stresses occur in the semiconductor material (5) or the component layer sequence (9) during cooling, which stresses lead to cracking. Since the semiconductor material (5) that has grown together forms a so-called coalescence region (6), having a high density of imperfections in the crystal lattice, these thermally governed cracks (13) are more likely to occur in this region. If the semiconductor bodies are singulated along these regions, these regions high in defects can be removed during the singulation, and a semiconductor body of high crystal quality can be mass produced.

摘要翻译： 在衬底（1）上的图案化掩模层（3）的窗口（4）中生长半导体材料（5）。 半导体材料（5）通过半导体材料（5）从相邻窗口在掩模层（3）上一起生长以形成大的平坦表面（7），其适用于组件层序列（9）的进一步生长。 通过选择具有比半导体材料（5）更小的热膨胀系数的衬底（1），在冷却期间在半导体材料（5）或组件层序列（9）中产生特别强的拉伸应力，这些应力导致 开裂 由于已经一起生长的半导体材料（5）形成了在晶格中具有高密度缺陷的所谓的聚结区域（6），所以在该区域中更可能发生这些热控裂纹（13）。 如果半导体本体沿着这些区域被分割，则在切割期间可以去除高缺陷区域，并且可以大量生产高质量的半导体本体。

公开(公告)号：US20070012944A1

公开(公告)日：2007-01-18

申请号：US11508504

申请日：2006-08-23

申请人： Stefan Bader ,  Berthold Hahn ,  Volker Harle ,  Hans-Jurgen Lugauer ,  Manfred Mundbrod-Vangerow

发明人： Stefan Bader ,  Berthold Hahn ,  Volker Harle ,  Hans-Jurgen Lugauer ,  Manfred Mundbrod-Vangerow

IPC分类号： H01L33/00

CPC分类号： H01L33/0079 ,  H01L33/10 ,  H01L33/145 ,  H01L33/32 ,  H01L33/40 ,  H01L33/405 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/32245 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： An LED chip comprising an electrically conductive and radioparent substrate, in which the epitaxial layer sequence is provided on substantially the full area of its p-side with a reflective, bondable p-contact layer. The substrate is provided on its main surface facing away from the epitaxial layer sequence with a contact metallization that covers only a portion of said main surface, and the decoupling of light from the chip takes place via a bare region of the main surface of the substrate and via the chip sides. A further LED chip has epitaxial layers only. The p-type epitaxial layer is provided on substantially the full area of the main surface facing away from the n-conductive epitaxial layer with a reflective, bondable p-contact layer, and the n-conductive epitaxial layer is provided on its main surface facing away from the p-conductive epitaxial layer with an n-contact layer that covers only a portion of said main surface. The decoupling of light from the chip takes place via the bare region of the main surface of the n-conductive epitaxial layer and via the chip sides.

摘要翻译： 一种LED芯片，包括导电和无辐射基板，其中外延层序列在其p侧的基本上整个区域上设置有反射的，可粘合的p接触层。 衬底在其主表面上设置为背离外延层序列，接触金属化仅覆盖所述主表面的一部分，并且来自芯片的光的解耦通过衬底的主表面的裸露区域进行 并通过芯片侧面。 另外的LED芯片仅具有外延层。 p型外延层在主表面的大致整个区域上设置有背向n导电外延层的反射式可结合p接触层，并且n导电外延层设置在其主表面上 远离p导电外延层，其中n接触层仅覆盖所述主表面的一部分。 来自芯片的光的解耦通过n导电外延层的主表面的裸露区域和芯片侧进行。

公开(公告)号：US20060163601A1

公开(公告)日：2006-07-27

申请号：US10547217

申请日：2004-01-15

申请人： Volker Harle ,  Berthold Hahn ,  Hans-Jurgen Lugauer

发明人： Volker Harle ,  Berthold Hahn ,  Hans-Jurgen Lugauer

IPC分类号： H01L33/00 ,  H01L29/24

CPC分类号： H01L33/486 ,  H01L25/0753 ,  H01L33/22 ,  H01L33/507 ,  H01L33/54 ,  H01L33/56 ,  H01L33/60 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2924/16195 ,  H01L2924/00014 ,  H01L2924/00

摘要： An illumination module with at least one thin-film light emitting diode chip which is applied on a chip carrier having electrical connecting conductors and has a first and a second electrical connection side and also an epitaxially fabricated semiconductor layer sequence. The semiconductor layer sequence has an n-conducting semiconductor layer, a p-conducting semiconductor layer and an electromagnetic radiation generating region arranged between these two semiconductor layers and is arranged on a carrier. Moreover, it has a reflective layer at a main area facing toward the carrier, which reflective layer reflects at least one part of the electromagnetic radiation generated in the semiconductor layer sequence back into the latter. The semiconductor layer sequence has at least one semiconductor layer with at least one micropatterned, rough area. The coupling-out area of the thin-film light emitting diode chip is essentially defined by a main area remote from the reflective layer and is free of housing material such as potting or encapsulating material.

摘要翻译： 一种具有至少一个薄膜发光二极管芯片的照明模块，其被施加在具有电连接导体的芯片载体上，并且具有第一和第二电连接侧以及外延制造的半导体层序列。 半导体层序列具有n导电半导体层，p导电半导体层和布置在这两个半导体层之间的电磁辐射产生区域，并且布置在载体上。 此外，它在面向载体的主要区域上具有反射层，该反射层将半导体层序列中产生的电磁辐射的至少一部分反射回其中。 半导体层序列具有至少一个具有至少一个微图案化粗糙区域的半导体层。 薄膜发光二极管芯片的耦合输出区域基本上由远离反射层的主区域限定，并且不具有封装材料，例如灌封或封装材料。

公开(公告)号：US20050239270A1

公开(公告)日：2005-10-27

申请号：US10503042

申请日：2003-01-30

申请人： Michael Fehrer ,  Berthold Hahn ,  Volker Harle ,  Stephan Kaiser ,  Frank Otte ,  Andreas Plössl

发明人： Michael Fehrer ,  Berthold Hahn ,  Volker Harle ,  Stephan Kaiser ,  Frank Otte ,  Andreas Plössl

IPC分类号： B23K26/00 ,  B23K26/40 ,  B23K101/40 ,  C30B33/00 ,  H01L21/20 ,  H01L21/268 ,  H01L21/762 ,  H01L33/00 ,  H01S5/323 ,  H01L21/301

CPC分类号： H01L21/76251 ,  B23K26/40 ,  B23K26/50 ,  B23K2103/172 ,  C30B29/40 ,  C30B29/403 ,  C30B29/406 ,  C30B33/00 ,  H01L21/2007 ,  H01L24/29 ,  H01L24/83 ,  H01L33/0079 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/29298 ,  H01L2224/83001 ,  H01L2224/8319 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/0106 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/157 ,  H01L2924/15763 ,  H01L2924/00 ,  H01L2924/01026 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01046 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929

摘要： A method for producing a semiconductor component, in particular a thin-film component, a semiconductor layer being separated from a substrate by irradiation with a laser beam having a plateaulike spatial beam profile. Furthermore, the semiconductor layer, prior to separation, is applied to a carrier with an adapted thermal expansion coefficient. The method is suitable in particular for semiconductor layers containing a nitride compound semiconductor.

摘要翻译： 一种用于制造半导体部件的方法，特别是薄膜部件，通过用具有平板空间光束轮廓的激光束照射与基板分离的半导体层。 此外，半导体层在分离之前被施加到具有适应的热膨胀系数的载体上。 该方法特别适用于含有氮化物半导体的半导体层。

公开(公告)号：US20050042864A1

公开(公告)日：2005-02-24

申请号：US10495620

申请日：2002-11-12

申请人： Georg Bruderl ,  Berthold Hahn ,  Volker Harle ,  Hans-Jurgen Lugauer ,  Uwe Strauss ,  Andreas Weimar

发明人： Georg Bruderl ,  Berthold Hahn ,  Volker Harle ,  Hans-Jurgen Lugauer ,  Uwe Strauss ,  Andreas Weimar

IPC分类号： H01S5/042 ,  H01L21/285 ,  H01L21/363 ,  H01L29/20 ,  H01L29/45 ,  H01L33/14 ,  H01L33/32 ,  H01L33/40 ,  H01L21/44 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L29/452 ,  H01L21/28575 ,  H01L29/2003 ,  H01L33/14 ,  H01L33/325 ,  H01L33/40

摘要： An ohmic contact structure having a metallization (14) arranged on a semiconductor material (10), a contact layer being formed in the semiconductor material (10), which contact layer has a first partial region adjoining the metallization (14) and a second partial region (18) arranged downstream of the first partial region. The contact layer is doped in such a way that the doping concentration (N2) in the first partial region (12) is greater than the doping concentration (N1) in the second partial region (18).

摘要翻译： 具有布置在半导体材料（10）上的金属化（14）的欧姆接触结构，在半导体材料（10）中形成的接触层，该接触层具有邻接金属化层（14）的第一部分区域和第二部分 区域（18）布置在第一部分区域的下游。 以使第一部分区域（12）中的掺杂浓度（N2）大于第二部分区域（18）中的掺杂浓度（N1）的方式掺杂接触层。

公开(公告)号：US09123528B2

公开(公告)日：2015-09-01

申请号：US13883730

申请日：2011-12-16

申请人： Johannes Baur ,  Berthold Hahn ,  Karl Engl ,  Ann-Kathrin Haerle ,  Jakob Johannes Haerle ,  Johanna Magdalena Haerle ,  Joachim Hertkorn ,  Tetsuya Taki

发明人： Johannes Baur ,  Berthold Hahn ,  Karl Engl ,  Volker Haerle ,  Joachim Hertkorn ,  Tetsuya Taki

IPC分类号： H01L29/02 ,  H01L21/78 ,  H01L21/02 ,  H01L33/00 ,  H01L33/08

CPC分类号： H01L33/32 ,  H01L21/02612 ,  H01L21/78 ,  H01L24/73 ,  H01L29/02 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/46 ,  H01L33/507 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00012 ,  H01L2924/00014

摘要： A composite substrate has a carrier and a utility layer. The utility layer is attached to the carrier by means of a dielectric bonding layer and the carrier contains a radiation conversion material. Other embodiments relate to a semiconductor chip having such a composite substrate, a method for producing a composite substrate and a method for producing a semiconductor chip with a composite substrate.

摘要翻译： 复合衬底具有载体和效用层。 实用层通过介电粘合层附着到载体上，载体包含辐射转换材料。 其他实施方式涉及具有这种复合基板的半导体芯片，复合基板的制造方法以及具有复合基板的半导体芯片的制造方法。

公开(公告)号：US08581279B2

公开(公告)日：2013-11-12

申请号：US11921530

申请日：2006-06-02

申请人： Johannes Baur ,  Volker Härle ,  Berthold Hahn ,  Andreas Weimar ,  Raimund Oberschmid ,  Ewald Karl Michael Guenther ,  Franz Eberhard ,  Markus Richter ,  Jörg Strauss

发明人： Johannes Baur ,  Volker Härle ,  Berthold Hahn ,  Andreas Weimar ,  Raimund Oberschmid ,  Ewald Karl Michael Guenther ,  Franz Eberhard ,  Markus Richter ,  Jörg Strauss

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a luminescence diode chip having a radiation exit area (1) and a contact structure (2, 3, 4) which is arranged on the radiation exit area (1) and comprises a bonding pad (4) and a plurality of contact webs (2, 3) which are provided for current expansion and are electrically conductively connected to the bonding pad (4), the bonding pad (4) is arranged in an edge region of the radiation exit area (1). The luminescence diode chip has reduced absorption of the emitted radiation (23) in the contact structure (2, 3, 4).

公开(公告)号：US08138511B2

公开(公告)日：2012-03-20

申请号：US11567977

申请日：2006-12-07

申请人： Johannes Baur ,  Dominik Eisert ,  Michael Fehrer ,  Berthold Hahn ,  Volker Härle ,  Marianne Ortmann ,  Uwe Strauss ,  Johannes Völkl ,  Ulrich Zehnder

发明人： Johannes Baur ,  Dominik Eisert ,  Michael Fehrer ,  Berthold Hahn ,  Volker Härle ,  Marianne Ortmann ,  Uwe Strauss ,  Johannes Völkl ,  Ulrich Zehnder

IPC分类号： H01L21/00

CPC分类号： H01L33/20 ,  H01L33/0079 ,  H01L33/02 ,  H01L2224/48091 ,  H01L2224/48463 ,  H01L2224/73265 ,  H01L2924/10155 ,  H01L2924/00014

摘要： A radiation-emitting semiconductor component has an improved radiation efficiency. The semiconductor component has a multilayer structure with an active layer for generating radiation within the multilayer structure and also a window having a first and a second main surface. The multi-layer structure adjoins the first main surface of the window. At least one recess, such as a trench or a pit, is formed in the window from the second main surface for the purpose of increasing the radiation efficiency. The recess preferably has a trapezoidal cross section tapering toward the first main surface and can be produced for example by sawing into the window.

摘要翻译： 辐射发射半导体组件具有改进的辐射效率。 半导体部件具有多层结构，其具有用于在多层结构内产生辐射的有源层，以及具有第一和第二主表面的窗口。 多层结构邻接窗口的第一主表面。 为了提高辐射效率，至少一个凹槽（例如沟槽或凹坑）从第二主表面形成在窗口中。 凹部优选地具有朝向第一主表面渐缩的梯形横截面，并且可以例如通过锯入窗口来制造。