公开(公告)号：US08441118B2

公开(公告)日：2013-05-14

申请号：US12589409

申请日：2009-10-22

申请人： Fay Hua

发明人： Fay Hua

IPC分类号： H01L23/04

CPC分类号： H01L23/49816 ,  H01L21/4846 ,  H01L21/486 ,  H01L23/36 ,  H01L23/49827 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L2224/0401 ,  H01L2224/05554 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05647 ,  H01L2224/1141 ,  H01L2224/11436 ,  H01L2224/1147 ,  H01L2224/1152 ,  H01L2224/11848 ,  H01L2224/11849 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13294 ,  H01L2224/133 ,  H01L2224/13311 ,  H01L2224/13316 ,  H01L2224/13339 ,  H01L2224/13344 ,  H01L2224/13347 ,  H01L2224/13411 ,  H01L2224/13416 ,  H01L2224/13439 ,  H01L2224/13444 ,  H01L2224/13447 ,  H01L2224/13499 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/27436 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2224/9211 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/16152 ,  H01L2224/16225 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/0105 ,  H01L2224/11 ,  H01L2224/27 ,  H01L2224/81 ,  H01L2224/83

摘要： A nano-sized metal particle composite includes a first metal that has a particle size of about 50 nanometer or smaller. A wire interconnect is in contact with a reflowed nanosolder and has the same metal or alloy composition as the reflowed nanosolder. A microelectronic package is also disclosed that uses the reflowed nanosolder composition. A method of assembling a microelectronic package includes preparing a wire interconnect template. A computing system includes a nanosolder composition coupled to a wire interconnect.

公开(公告)号：US20100047971A1

公开(公告)日：2010-02-25

申请号：US12589409

申请日：2009-10-22

申请人： Fay Hua

发明人： Fay Hua

IPC分类号： H01L21/60 ,  H01L21/50

CPC分类号： H01L23/49816 ,  H01L21/4846 ,  H01L21/486 ,  H01L23/36 ,  H01L23/49827 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L2224/0401 ,  H01L2224/05554 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05647 ,  H01L2224/1141 ,  H01L2224/11436 ,  H01L2224/1147 ,  H01L2224/1152 ,  H01L2224/11848 ,  H01L2224/11849 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13294 ,  H01L2224/133 ,  H01L2224/13311 ,  H01L2224/13316 ,  H01L2224/13339 ,  H01L2224/13344 ,  H01L2224/13347 ,  H01L2224/13411 ,  H01L2224/13416 ,  H01L2224/13439 ,  H01L2224/13444 ,  H01L2224/13447 ,  H01L2224/13499 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/27436 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2224/9211 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/16152 ,  H01L2224/16225 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/0105 ,  H01L2224/11 ,  H01L2224/27 ,  H01L2224/81 ,  H01L2224/83

摘要： A nano-sized metal particle composite includes a first metal that has a particle size of about 50 nanometer or smaller. A wire interconnect is in contact with a reflowed nanosolder and has the same metal or alloy composition as the reflowed nanosolder. A microelectronic package is also disclosed that uses the reflowed nanosolder composition. A method of assembling a microelectronic package includes preparing a wire interconnect template. A computing system includes a nanosolder composition coupled to a wire interconnect.

摘要翻译： 纳米尺寸金属颗粒复合材料包括粒径为约50纳米或更小的第一金属。 电线互连与回流纳米溶剂接触并具有与回流纳米溶剂相同的金属或合金组成。 还公开了使用回流纳米涂料组合物的微电子封装。 组装微电子封装的方法包括制备导线互连模板。 计算系统包括耦合到电线互连的纳米涂料组合物。

公开(公告)号：US20060001178A1

公开(公告)日：2006-01-05

申请号：US10883419

申请日：2004-06-30

申请人： Mark Bohr ,  Jun He ,  Fay Hua ,  Dustin Wood

发明人： Mark Bohr ,  Jun He ,  Fay Hua ,  Dustin Wood

IPC分类号： H01L23/48 ,  H01L21/44

CPC分类号： H01L23/5382 ,  H01L2224/0554 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/056 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： In one embodiment of the invention, an integrated circuit package includes an integrated circuit, a package substrate, a first bump, a second bump and a shunt to provide for current distribution and reliability redundancy. The first and second bumps provide a first and second electric current pathway between the integrated circuit and package substrate. The shunt provides a third electric current pathway between the first bump and the second bump.

公开(公告)号：US20050153523A1

公开(公告)日：2005-07-14

申请号：US11073277

申请日：2005-03-04

申请人： Fay Hua

发明人： Fay Hua

IPC分类号： B23K35/26 ,  H01L23/485 ,  H05K3/34 ,  H01L21/44

CPC分类号： H01L24/10 ,  B23K35/262 ,  B23K2101/42 ,  H01L24/13 ,  H01L2224/05572 ,  H01L2224/05573 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01061 ,  H01L2924/01063 ,  H01L2924/01075 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15311 ,  H05K3/3436 ,  H05K3/3463 ,  H01L2924/00 ,  H01L2224/05599

摘要： Lead-free solders comprising 85-96% tin (Sn) and 4-15% Indium (In) by weight percentage (wt. %) and exemplary uses of the same are disclosed. The Sn—In solder undergoes a martensitic phase change when it is cooled from a reflow temperature to room temperature. As a result, residual stresses that would normally occur due to solder strain caused by relative movement between joined components are substantially reduced. Typically, the relative movement results from a coefficient of thermal expansion (CTE) mismatch between the joined components. The disclosed exemplary uses include flip-chip assembly and IC package to circuit board mounting, such as ball grid array packages.

摘要翻译： 公开了包含85-96％锡（Sn）和4-15％铟（In）重量百分比（重量％）的无铅焊料及其示例性用途。 Sn-In焊料从回流温度冷却至室温时，会发生马氏体相变。 结果，由于由连接的部件之间的相对运动引起的焊料应变通常会发生的残余应力显着降低。 通常，相对运动由连接的部件之间的热膨胀系数（CTE）失配产生。 所公开的示例性用途包括倒装芯片组装和IC封装到电路板安装，例如球栅阵列封装。

公开(公告)号：US06867978B2

公开(公告)日：2005-03-15

申请号：US10266996

申请日：2002-10-08

申请人： Kris J. Whittenburg ,  Fay Hua ,  Carl L. Deppisch ,  Sabina J. Houle ,  Peter Brandenburger ,  Kim L. Phillippe

发明人： Kris J. Whittenburg ,  Fay Hua ,  Carl L. Deppisch ,  Sabina J. Houle ,  Peter Brandenburger ,  Kim L. Phillippe

IPC分类号： H01L23/373 ,  H01L23/433 ,  H05K7/20

CPC分类号： H01L23/433 ,  H01L23/3733 ,  H01L24/29 ,  H01L2224/16 ,  H01L2224/73253 ,  H01L2924/00014 ,  H01L2924/14 ,  H01L2924/16152 ,  H01L2924/00 ,  H01L2224/0401

摘要： A system includes a thermal interface material (TIM) to transfer heat from a die to a heat spreader. The system includes a heat transfer subsystem disposed on the backside surface of the die. In one embodiment, the heat transfer subsystem comprises a first heat transfer material and a second heat transfer material discretely disposed within the first heat transfer material. A method of bonding a die to a heat spreader uses a die-referenced process as opposed to a substrate-referenced process.

公开(公告)号：US06813153B2

公开(公告)日：2004-11-02

申请号：US10246225

申请日：2002-09-18

申请人： Paul A. Koning ,  Fay Hua

发明人： Paul A. Koning ,  Fay Hua

IPC分类号： H05K720

CPC分类号： B23K35/26 ,  B23K1/0016 ,  B23K35/0244 ,  B23K35/262 ,  B23K35/3613 ,  B23K2101/40 ,  H01L23/3737 ,  H01L2924/0002 ,  Y10T428/125 ,  Y10T428/12701 ,  Y10T428/12896 ,  Y10T428/1419 ,  Y10T428/1452 ,  Y10T428/2982 ,  H01L2924/00

摘要： A polymer solder hybrid (PSH) thermal interface material (TIM). The PSH TIM includes a solder with a low melt temperature and a filler with a high melt temperature. Upon initiation of reflow, the filler diffuses into the solder to form a new filler-solder alloy having an increased melting point and added robustness.

摘要翻译： 聚合物焊料混合（PSH）热界面材料（TIM）。 PSH TIM包括具有低熔融温度的焊料和具有高熔体温度的填料。 在回流开始时，填料扩散到焊料中以形成具有增加的熔点和增加的鲁棒性的新的填料 - 焊料合金。

公开(公告)号：US20080296754A1

公开(公告)日：2008-12-04

申请号：US12179225

申请日：2008-07-24

申请人： Fay Hua ,  Gregory M. Chrysler ,  James G. Maveety ,  K. V. Ravi

发明人： Fay Hua ,  Gregory M. Chrysler ,  James G. Maveety ,  K. V. Ravi

IPC分类号： H01L23/36 ,  H01L23/52 ,  H01L21/4763

CPC分类号： H01L23/36 ,  H01L23/3677 ,  H01L2224/32245 ,  H01L2924/3011

摘要： A method and apparatus to minimize thermal impedance using copper on the die or chip backside. Some embodiments use deposited copper having a thickness chosen to complement a given chip thickness, in order to reduce or minimize wafer warpage. In some embodiments, the wafer, having a plurality of chips (e.g., silicon), is thinned (e.g., by chemical-mechanical polishing) before deposition of the copper layer, to reduce the thermal resistance of the chip. Some embodiments further deposit copper in a pattern of bumps, raised areas, or pads, e.g., in a checkerboard pattern, to thicken and add copper while reducing or minimizing wafer warpage and chip stress.

摘要翻译： 使用铜芯在芯片或芯片背面上最小化热阻抗的方法和装置。 一些实施例使用具有选择的厚度的沉积铜来补充给定的芯片厚度，以便减小或最小化晶片翘曲。 在一些实施例中，具有多个芯片（例如硅）的晶片在沉积铜层之前被薄化（例如通过化学机械抛光），以降低芯片的热阻。 一些实施例进一步将铜以凸起，凸起区域或焊盘（例如棋盘图案）的图案沉积，以增加和添加铜，同时减少或最小化晶片翘曲和芯片应力。

公开(公告)号：US20080111234A1

公开(公告)日：2008-05-15

申请号：US11558504

申请日：2006-11-10

申请人： Fay Hua ,  Carl L. Deppisch ,  Joni G. Hansen ,  Youzhi E. Xu

发明人： Fay Hua ,  Carl L. Deppisch ,  Joni G. Hansen ,  Youzhi E. Xu

IPC分类号： H01L23/36 ,  H01L21/58 ,  B32B5/14

CPC分类号： H01L23/367 ,  H01L23/3737 ,  H01L23/42 ,  H01L23/4275 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/29076 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29124 ,  H01L2224/29147 ,  H01L2224/2929 ,  H01L2224/29294 ,  H01L2224/293 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2924/01046 ,  H01L2924/01055 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/15311 ,  H01L2924/16195 ,  Y10T428/249921 ,  H01L2924/00 ,  H01L2924/014

摘要： A composite of two or more thermal interface materials (“TIMs”) is placed between a die and a heat spreader to improve cooling of the die in an integrated circuit package. The two or more TIMs vary in heat-dissipation capability depending upon the locations of die hot spots. In an embodiment, a more thermally conductive material may be positioned over one or more die hot spots, and a less thermally conductive material may be positioned abutting and/or surrounding the more thermally conductive material. The two or more TIMs may comprise a solder and a polymer. The composite TIM may be preformed as one unit or as a plurality of units. Methods of fabrication, as well as application of the package to an electronic assembly and to an electronic system, are also described.

摘要翻译： 将两个或多个热界面材料（“TIM”）的复合物放置在管芯和散热器之间，以改善集成电路封装中管芯的冷却。 根据模具热点的位置，两个或多个TIM的散热能力各不相同。 在一个实施例中，更多导热材料可以被定位在一个或多个管芯热点上方，并且较少的导热材料可以被定位成邻接和/或围绕更多导热材料。 两个或更多个TIM可以包括焊料和聚合物。 复合TIM可以作为一个单元或多个单元来执行。 还描述了制造方法以及将包装应用于电子组件和电子系统。

公开(公告)号：US07242097B2

公开(公告)日：2007-07-10

申请号：US10609715

申请日：2003-06-30

申请人： Fay Hua

发明人： Fay Hua

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L24/10 ,  H01L23/49816 ,  H01L24/13 ,  H01L24/81 ,  H01L2224/05001 ,  H01L2224/05026 ,  H01L2224/051 ,  H01L2224/05571 ,  H01L2224/056 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/81801 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/1433 ,  H05K3/3436 ,  H05K2201/0367 ,  H05K2201/10674 ,  Y02P70/613 ,  H01L2924/00 ,  H01L2924/00014

摘要： A microelectronic package is disclosed including a microelectronic device, a substrate, and a signaling path coupling the microelectronic device with the substrate. The signaling path includes a conductive material, a solder joint, and a barrier material disposed between the conductive material and the solder joint. The barrier material may include nickel, cobalt, iron, titanium, and combinations thereof.

摘要翻译： 公开了一种微电子封装，其包括微电子器件，衬底和将微电子器件与衬底耦合的信号通路。 信号路径包括导电材料，焊接接头和设置在导电材料和焊料接头之间的阻挡材料。 阻挡材料可以包括镍，钴，铁，钛及其组合。

公开(公告)号：US20060276022A1

公开(公告)日：2006-12-07

申请号：US11142971

申请日：2005-06-01

申请人： Jianxing Li ,  Ming Fang ,  Ting Zhong ,  Fay Hua ,  Kevin Lee

发明人： Jianxing Li ,  Ming Fang ,  Ting Zhong ,  Fay Hua ,  Kevin Lee

IPC分类号： H01L21/44 ,  H01L23/48

CPC分类号： H01L24/81 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/0554 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05647 ,  H01L2224/1147 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/1316 ,  H01L2224/13164 ,  H01L2224/13609 ,  H01L2224/81801 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/01028 ,  H01L2224/13099 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A structure including a substrate, a copper bump formed over the substrate, and a barrier layer comprising an alloy of at least one of iron and nickel, formed over the copper bump, and methods to make such a structure.

摘要翻译： 包括衬底，形成在衬底上的铜凸块，以及包含在铜凸块上形成的铁和镍中的至少一种的合金的阻挡层的结构以及制造这种结构的方法。