公开(公告)号：US20150021780A1

公开(公告)日：2015-01-22

申请号：US13946949

申请日：2013-07-19

申请人： Yuping Gong ,  Yan Xun Xue ,  Ming-Chen Lu ,  Ping Huang ,  Jun Lu ,  Hamza Yilmaz

发明人： Yuping Gong ,  Yan Xun Xue ,  Ming-Chen Lu ,  Ping Huang ,  Jun Lu ,  Hamza Yilmaz

IPC分类号： H01L23/13 ,  H01L23/00

CPC分类号： H05K3/306 ,  H01L23/13 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/49844 ,  H01L23/49861 ,  H01L24/06 ,  H01L24/24 ,  H01L24/25 ,  H01L24/29 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/48 ,  H01L24/49 ,  H01L24/82 ,  H01L24/83 ,  H01L24/84 ,  H01L24/85 ,  H01L24/89 ,  H01L24/92 ,  H01L2224/04042 ,  H01L2224/0603 ,  H01L2224/24101 ,  H01L2224/24147 ,  H01L2224/29101 ,  H01L2224/32225 ,  H01L2224/371 ,  H01L2224/40095 ,  H01L2224/40225 ,  H01L2224/40245 ,  H01L2224/4103 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/49111 ,  H01L2224/73267 ,  H01L2224/82101 ,  H01L2224/82102 ,  H01L2224/83192 ,  H01L2224/83801 ,  H01L2224/85 ,  H01L2224/92224 ,  H01L2924/00014 ,  H01L2924/0781 ,  H01L2924/13091 ,  H01L2924/15153 ,  H05K3/32 ,  H05K3/4697 ,  Y10T29/4913 ,  Y10T29/49139 ,  Y10T29/49165 ,  Y10T29/49169 ,  H01L2924/00 ,  H01L2924/00015 ,  H01L2924/014 ,  H01L2224/45099 ,  H01L2224/8384 ,  H01L2224/8485 ,  H01L2224/8385

摘要： A thin power device comprises a substrate having a first set of first contact pads at a front surface of the substrate electrically connecting to a second set of second contact pads at a back surface of the substrate, a through opening opened from the front surface and through the substrate exposing a third contact pad at the back surface of the substrate, a semiconductor chip embedded into the through opening with a back metal layer at a back surface of the semiconductor chip attached on the third contact pad, and a plurality of conductive structures electrically connecting electrodes at a front surface of the semiconductor chip with the corresponding first contact pads in the first sets of first contact pads.

摘要翻译： 薄功率器件包括衬底，衬底在衬底的前表面处具有第一组第一接触焊盘，电连接到衬底的背面处的第二组第二接触焊盘，从前表面开口并穿过 所述基板在所述基板的背面暴露第三接触焊盘，在所述第三接触焊盘的所述半导体芯片的后表面处嵌入所述通孔中的背面金属层的半导体芯片，以及多个导电结构， 将所述半导体芯片的前表面处的电极与所述第一组第一接触焊盘中的对应的第一接触焊盘连接。

公开(公告)号：US09006901B2

公开(公告)日：2015-04-14

申请号：US13946949

申请日：2013-07-19

申请人： Yuping Gong ,  Yan Xun Xue ,  Ming-Chen Lu ,  Ping Huang ,  Jun Lu ,  Hamza Yilmaz

发明人： Yuping Gong ,  Yan Xun Xue ,  Ming-Chen Lu ,  Ping Huang ,  Jun Lu ,  Hamza Yilmaz

IPC分类号： H01L23/02 ,  H01L23/13 ,  H01L23/00

CPC分类号： H05K3/306 ,  H01L23/13 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/49844 ,  H01L23/49861 ,  H01L24/06 ,  H01L24/24 ,  H01L24/25 ,  H01L24/29 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/48 ,  H01L24/49 ,  H01L24/82 ,  H01L24/83 ,  H01L24/84 ,  H01L24/85 ,  H01L24/89 ,  H01L24/92 ,  H01L2224/04042 ,  H01L2224/0603 ,  H01L2224/24101 ,  H01L2224/24147 ,  H01L2224/29101 ,  H01L2224/32225 ,  H01L2224/371 ,  H01L2224/40095 ,  H01L2224/40225 ,  H01L2224/40245 ,  H01L2224/4103 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/49111 ,  H01L2224/73267 ,  H01L2224/82101 ,  H01L2224/82102 ,  H01L2224/83192 ,  H01L2224/83801 ,  H01L2224/85 ,  H01L2224/92224 ,  H01L2924/00014 ,  H01L2924/0781 ,  H01L2924/13091 ,  H01L2924/15153 ,  H05K3/32 ,  H05K3/4697 ,  Y10T29/4913 ,  Y10T29/49139 ,  Y10T29/49165 ,  Y10T29/49169 ,  H01L2924/00 ,  H01L2924/00015 ,  H01L2924/014 ,  H01L2224/45099 ,  H01L2224/8384 ,  H01L2224/8485 ,  H01L2224/8385

摘要： A thin power device comprises a substrate having a first set of first contact pads at a front surface of the substrate electrically connecting to a second set of second contact pads at a back surface of the substrate, a through opening opened from the front surface and through the substrate exposing a third contact pad at the back surface of the substrate, a semiconductor chip embedded into the through opening with a back metal layer at a back surface of the semiconductor chip attached on the third contact pad, and a plurality of conductive structures electrically connecting electrodes at a front surface of the semiconductor chip with the corresponding first contact pads in the first sets of first contact pads.

摘要翻译： 薄功率器件包括衬底，衬底在衬底的前表面处具有第一组第一接触焊盘，电连接到衬底的背面处的第二组第二接触焊盘，从前表面开口并穿过 所述基板在所述基板的背面暴露第三接触焊盘，在所述第三接触焊盘的所述半导体芯片的后表面处嵌入所述通孔中的背面金属层的半导体芯片，以及多个导电结构， 将所述半导体芯片的前表面处的电极与所述第一组第一接触焊盘中的对应的第一接触焊盘连接。

公开(公告)号：US20120104580A1

公开(公告)日：2012-05-03

申请号：US12916086

申请日：2010-10-29

申请人： Tao Feng ,  Zhiqiang Niu ,  Yuping Gong ,  Ruisheng Wu ,  Ping Huang ,  Lei Shi ,  Yueh-Se Ho

发明人： Tao Feng ,  Zhiqiang Niu ,  Yuping Gong ,  Ruisheng Wu ,  Ping Huang ,  Lei Shi ,  Yueh-Se Ho

IPC分类号： H01L23/495 ,  H01L23/498

CPC分类号： H01L21/6836 ,  H01L21/56 ,  H01L21/561 ,  H01L21/563 ,  H01L21/565 ,  H01L21/6835 ,  H01L21/76897 ,  H01L21/78 ,  H01L23/3114 ,  H01L23/481 ,  H01L23/495 ,  H01L23/49524 ,  H01L23/49537 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/14 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/34 ,  H01L24/36 ,  H01L24/40 ,  H01L24/73 ,  H01L24/94 ,  H01L25/50 ,  H01L27/088 ,  H01L29/0657 ,  H01L29/7827 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68359 ,  H01L2221/68381 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/04034 ,  H01L2224/05009 ,  H01L2224/05025 ,  H01L2224/051 ,  H01L2224/05139 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05571 ,  H01L2224/0603 ,  H01L2224/0616 ,  H01L2224/06181 ,  H01L2224/1184 ,  H01L2224/16245 ,  H01L2224/291 ,  H01L2224/32245 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/73253 ,  H01L2224/73255 ,  H01L2224/73263 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10155 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/2064 ,  H01L2924/3511 ,  H01L2224/03 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2924/00012 ,  H01L2224/37099

摘要： A substrate-less composite power semiconductor device may include a thin substrate and a top metal layer located on a top surface of the substrate. A total thickness of the substrate and the epitaxial layer may be less than 25 microns. Solder bumps are formed on top of the top metal layer and molding compound surrounds the solder bumps and leaves the solder bumps at least partly exposed.

摘要翻译： 无基底复合功率半导体器件可以包括薄衬底和位于衬底顶表面上的顶金属层。 衬底和外延层的总厚度可以小于25微米。 焊料凸块形成在顶部金属层的顶部，并且模塑料围绕焊料凸起并且使焊料凸块至少部分暴露。

公开(公告)号：US08987878B2

公开(公告)日：2015-03-24

申请号：US12916086

申请日：2010-10-29

申请人： Tao Feng ,  Zhiqiang Niu ,  Yuping Gong ,  Ruisheng Wu ,  Ping Huang ,  Lei Shi ,  Yueh-Se Ho

发明人： Tao Feng ,  Zhiqiang Niu ,  Yuping Gong ,  Ruisheng Wu ,  Ping Huang ,  Lei Shi ,  Yueh-Se Ho

IPC分类号： H01L23/495 ,  H01L21/683 ,  H01L21/56 ,  H01L23/31 ,  H01L23/48 ,  H01L23/00 ,  H01L29/06

CPC分类号： H01L21/6836 ,  H01L21/56 ,  H01L21/561 ,  H01L21/563 ,  H01L21/565 ,  H01L21/6835 ,  H01L21/76897 ,  H01L21/78 ,  H01L23/3114 ,  H01L23/481 ,  H01L23/495 ,  H01L23/49524 ,  H01L23/49537 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/14 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/34 ,  H01L24/36 ,  H01L24/40 ,  H01L24/73 ,  H01L24/94 ,  H01L25/50 ,  H01L27/088 ,  H01L29/0657 ,  H01L29/7827 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68359 ,  H01L2221/68381 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/04034 ,  H01L2224/05009 ,  H01L2224/05025 ,  H01L2224/051 ,  H01L2224/05139 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05571 ,  H01L2224/0603 ,  H01L2224/0616 ,  H01L2224/06181 ,  H01L2224/1184 ,  H01L2224/16245 ,  H01L2224/291 ,  H01L2224/32245 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/73253 ,  H01L2224/73255 ,  H01L2224/73263 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10155 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/2064 ,  H01L2924/3511 ,  H01L2224/03 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2924/00012 ,  H01L2224/37099

摘要： A substrate-less composite power semiconductor device may include a thin substrate and a top metal layer located on a top surface of the substrate. A total thickness of the substrate and the epitaxial layer may be less than 25 microns. Solder bumps are formed on top of the top metal layer and molding compound surrounds the solder bumps and leaves the solder bumps at least partly exposed.

摘要翻译： 无基底复合功率半导体器件可以包括薄衬底和位于衬底顶表面上的顶金属层。 衬底和外延层的总厚度可以小于25微米。 焊料凸块形成在顶部金属层的顶部，并且模塑料围绕焊料凸起并且使焊料凸块至少部分暴露。

公开(公告)号：US08642397B1

公开(公告)日：2014-02-04

申请号：US13607775

申请日：2012-09-09

申请人： Yuping Gong ,  Yan Xun Xue ,  Ping Huang

发明人： Yuping Gong ,  Yan Xun Xue ,  Ping Huang

IPC分类号： H01L21/44

CPC分类号： H01L23/3114 ,  H01L23/3121 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A wafer-level semiconductor package method comprising the step of providing a first wafer comprising a plurality of first dies each having a first, a second and a third electrodes formed on its front surface; attaching a second die having a fourth and a fifth electrodes formed on its front surface and a sixth electrode formed at its back surface onto each of the first die of the first wafer with the sixth electrode at the back surface of the second die attached and electrically connected to the second electrode at the front surface of the first die; and cutting the first wafer to singulate individual semiconductor packages.

摘要翻译： 一种晶片级半导体封装方法，包括提供包括多个第一裸片的第一晶片的步骤，所述第一晶片具有形成在其前表面上的第一，第二和第三电极; 将具有在其前表面上形成的第四和第五电极的第二管芯和在其后表面上形成的第六电极连接到第一晶片的每个第一管芯上，第二电极的后表面上的第六电极被附接并电连接 在第一模具的前表面处连接到第二电极; 并切割第一晶片以单独的半导体封装。

公开(公告)号：US08772144B2

公开(公告)日：2014-07-08

申请号：US13294903

申请日：2011-11-11

申请人： TingGang Zhu ,  Anup Bhalla ,  Ping Huang ,  Yueh-se Ho

发明人： TingGang Zhu ,  Anup Bhalla ,  Ping Huang ,  Yueh-se Ho

IPC分类号： H01L21/28 ,  H01L21/44

CPC分类号： H01L29/872 ,  H01L21/0217 ,  H01L21/0254 ,  H01L21/28581 ,  H01L21/30612 ,  H01L21/31111 ,  H01L21/56 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L25/18 ,  H01L27/0248 ,  H01L27/0814 ,  H01L29/0619 ,  H01L29/0688 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/405 ,  H01L29/417 ,  H01L29/66136 ,  H01L29/66143 ,  H01L29/66212 ,  H01L29/861 ,  H01L29/8611 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05016 ,  H01L2224/05567 ,  H01L2224/11616 ,  H01L2224/13017 ,  H01L2224/13021 ,  H01L2224/13022 ,  H01L2924/00014 ,  H01L2924/1033 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/05552

摘要： A vertical conduction nitride-based Schottky diode is formed using an insulating substrate which was lifted off after the diode device is encapsulated on the front side with a wafer level molding compound. The wafer level molding compound provides structural support on the front side of the diode device to allow the insulating substrate to be lifted off so that a conductive layer can be formed on the backside of the diode device as the cathode electrode. A vertical conduction nitride-based Schottky diode is thus realized. In another embodiment, a protection circuit for a vertical GaN Schottky diode employs a silicon-based vertical PN junction diode connected in parallel to the GaN Schottky diode to divert reverse bias avalanche current.

摘要翻译： 使用绝缘基板形成垂直导电氮化物基肖特基二极管，绝缘基板在二极管器件用晶片级模塑料封装在前侧之后被提起。 晶片级成型复合体在二极管器件的前侧提供结构支撑，以允许绝缘基板被提起，使得可以在作为阴极的二极管器件的背面上形成导电层。 因此实现了基于垂直导电氮化物的肖特基二极管。 在另一个实施例中，用于垂直GaN肖特基二极管的保护电路采用与GaN肖特基二极管并联连接的硅基垂直PN结二极管，以转移反向偏置雪崩电流。

公开(公告)号：US20130119393A1

公开(公告)日：2013-05-16

申请号：US13294903

申请日：2011-11-11

申请人： TingGang Zhu ,  Anup Bhalla ,  Ping Huang ,  Yueh-se Ho

发明人： TingGang Zhu ,  Anup Bhalla ,  Ping Huang ,  Yueh-se Ho

IPC分类号： H01L29/20 ,  H01L29/06 ,  H01L21/20

CPC分类号： H01L29/872 ,  H01L21/0217 ,  H01L21/0254 ,  H01L21/28581 ,  H01L21/30612 ,  H01L21/31111 ,  H01L21/56 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L25/18 ,  H01L27/0248 ,  H01L27/0814 ,  H01L29/0619 ,  H01L29/0688 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/405 ,  H01L29/417 ,  H01L29/66136 ,  H01L29/66143 ,  H01L29/66212 ,  H01L29/861 ,  H01L29/8611 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05016 ,  H01L2224/05567 ,  H01L2224/11616 ,  H01L2224/13017 ,  H01L2224/13021 ,  H01L2224/13022 ,  H01L2924/00014 ,  H01L2924/1033 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/05552

摘要： A vertical conduction nitride-based Schottky diode is formed using an insulating substrate which was lifted off after the diode device is encapsulated on the front side with a wafer level molding compound. The wafer level molding compound provides structural support on the front side of the diode device to allow the insulating substrate to be lifted off so that a conductive layer can be formed on the backside of the diode device as the cathode electrode. A vertical conduction nitride-based Schottky diode is thus realized. In another embodiment, a protection circuit for a vertical GaN Schottky diode employs a silicon-based vertical PN junction diode connected in parallel to the GaN Schottky diode to divert reverse bias avalanche current.

摘要翻译： 使用绝缘基板形成垂直导电氮化物基肖特基二极管，绝缘基板在二极管器件用晶片级模塑料封装在前侧之后被提起。 晶片级成型复合体在二极管器件的前侧提供结构支撑，以允许绝缘基板被提起，使得可以在作为阴极的二极管器件的背面上形成导电层。 因此实现了基于垂直导电氮化物的肖特基二极管。 在另一个实施例中，用于垂直GaN肖特基二极管的保护电路采用与GaN肖特基二极管并联连接的硅基垂直PN结二极管，以转移反向偏置雪崩电流。

公开(公告)号：US09597769B2

公开(公告)日：2017-03-21

申请号：US13488149

申请日：2012-06-04

申请人： Paul Andre Lefevre ,  William C. Allison ,  James P. LaCasse ,  Diane Scott ,  Alexander William Simpson ,  Ping Huang ,  Leslie M. Charns

发明人： Paul Andre Lefevre ,  William C. Allison ,  James P. LaCasse ,  Diane Scott ,  Alexander William Simpson ,  Ping Huang ,  Leslie M. Charns

IPC分类号： B24B37/20 ,  B24B37/22 ,  B24B37/26 ,  B24B37/16 ,  B24D11/00 ,  B24D18/00

CPC分类号： B24B37/205 ,  B24B37/16 ,  B24B37/22 ,  B24B37/26 ,  B24D11/003 ,  B24D18/0009

摘要： Polishing pads with a polishing surface layer having an aperture or opening above a transparent foundation layer are described. In an example, a polishing pad for polishing a substrate includes a foundation layer having a global top surface and a transparent region. A polishing surface layer is attached to the global top surface of the foundation layer. The polishing surface layer has a polishing surface and a back surface. An aperture is disposed in the polishing pad from the back surface through to the polishing surface of the polishing surface layer, and aligned with the transparent region of the foundation layer. The foundation layer provides an impermeable seal for the aperture at the back surface of the polishing surface layer. Methods of fabricating such polishing pads are also described.

公开(公告)号：US08657653B2

公开(公告)日：2014-02-25

申请号：US12895479

申请日：2010-09-30

申请人： William C. Allison ,  Diane Scott ,  Ping Huang ,  Richard Frentzel ,  Alexander William Simpson

发明人： William C. Allison ,  Diane Scott ,  Ping Huang ,  Richard Frentzel ,  Alexander William Simpson

IPC分类号： B24D11/00

CPC分类号： B24D11/003 ,  B24B37/013 ,  B24B37/205

摘要： Homogeneous polishing pads for polishing semiconductor substrates using eddy current end-point detection are described. Methods of fabricating homogeneous polishing pads for polishing semiconductor substrates using eddy current end-point detection are also described.

摘要翻译： 描述了使用涡流端点检测来研磨半导体衬底的均匀抛光垫。 还描述了使用涡流端点检测来制造用于抛光半导体衬底的均匀抛光垫的方法。

公开(公告)号：US08639936B2

公开(公告)日：2014-01-28

申请号：US12736251

申请日：2008-03-25

申请人： Zhiyuan Hu ,  Zhikun Wan ,  Zhigang Luo ,  Ping Huang

发明人： Zhiyuan Hu ,  Zhikun Wan ,  Zhigang Luo ,  Ping Huang

IPC分类号： H04L29/06

CPC分类号： H04L63/061 ,  H04L9/0844 ,  H04L9/3271 ,  H04L63/164 ,  H04L2463/061 ,  H04W12/04 ,  H04W12/06

摘要： Methods in OMA SEC_CF for providing security services to traffic over UDP between a client and a server and the relevant entities are provided. A pre-shared key is pre-shared between the client and the server. A pair of IPSec ESP SAs between the client and the server is established without shared key negotiation, wherein traffic data cryptographic algorithms are determined. Traffic data security keys are derived from the pre-shared key via the determined traffic data cryptographic algorithms. Then, data of the traffic can be provided with security services with the traffic data security keys through use of IPSec ESP.

摘要翻译： 提供了OMA SEC_CF中用于​​向客户端和服务器以及相关实体之间通过UDP提供安全服务的方法。 预共享密钥在客户端和服务器之间预先共享。 建立客户端与服务器之间的一对IPSec ESP SA，无需共享密钥协商，确定流量数据加密算法。 业务数据安全密钥通过所确定的业务数据密码算法从预共享密钥导出。 然后，可以通过使用IPSec ESP为业务数据提供具有业务数据安全密钥的安全服务。