摘要:
A package having a plurality of stacked substrates is provided. The package has at least two substrates. One substrate is stacked over the other to construct a three-dimensional circuit structure. Elements are disposed on the respective substrates. At least a conductive column is disposed between the two substrates. A lead-frame is connected to the substrates or the elements. The lead-frame also has a plurality of leads. The two neighboring substrates are electrically connected through the conductive column so that the average signal transmission length is shortened and the signal transmission quality is improved. Furthermore, the conductive column increases the mechanical strength of the package and reduces the degree of warping in the package so that a longer life span can be expected.
摘要:
A method of forming a conductive pattern on a metallic frame for manufacturing a stack frame for electrical connections is disclosed. In one embodiment, a recess is formed in the metallic frame and a conductive element is bonded in the recess to make a stack frame for electrical connections. In another embodiment, the process can be performed on both top surface and bottom surface of metallic frame to make another stack frame for electrical connections. In yet another embodiment, a package structure and a manufacturing method of forming a conductive pattern on a lead frame for electrical connections are disclosed.
摘要:
The invention discloses a package structure for better heat-dissipation or EMI performance. A first conductive element and a second conductive element are both disposed between the top lead frame and the bottom lead frame. The first terminal of the first conductive element is electrically connected to the bottom lead frame, and the second terminal of the first conductive element is electrically connected to the top lead frame. The third terminal of the second conductive element is electrically connected to the bottom lead frame, and the fourth terminal of the second conductive element is electrically connected to the top lead frame. In one embodiment, a heat dissipation device is disposed on the top lead frame. In one embodiment, the molding compound is provided such that the outer leads of the top lead frame are exposed outside the molding compound.
摘要:
A MOSFET pair with a stack capacitor is disclosed herein. It can regulate the input voltage and optimize a short EMI loop. It has a bottom lead frame and an up lead frame, which can simultaneously dissipate the heat generated by two MOSFETs to achieve excellent thermal-dissipation. It can adopt solder, Ag epoxy, or gold balls to implement the electrical bonding of two MOSFETs with the bottom lead frame and the up lead frame to achieve excellent structural flexibility. A device, such as an IGBT, a diode, an inductor, a choke, and a heat sink, can be stacked above the up lead frame to form a powerful SiP module. A corresponding method of manufacturing the MOSFET pair with a stack capacitor is also disclosed herein, which is simple, time-saving, flexible, cost-effective, and facile.
摘要:
A chip package structure including a substrate, at least one chip, a heat dissipation device, at least one first conductive bar, a molding compound, and at least one second conductive bar is provided. The chip and the heat dissipation device are respectively disposed on a first and a second surface of the substrate. The first conductive bar has two opposite end surfaces, wherein one end surface is disposed on the first surface of the substrate, the other end surface is extended away from the substrate, and a fastening slot is disposed between the two end surfaces and passes through the other end surface. The molding compound encapsulates the substrate, the chip, part of the heat dissipation device, and the first conductive bar. The second conductive bar is disposed on one surface of the molding compound and has a protrusion portion fastened to the fastening slot of the first conductive bar.
摘要:
A high-density power module package wherein the circuits and a part of chips of the power module are formed on respective substrates such that the circuit patterns are not influenced by the chips. Accordingly, the density of the circuit can be improved so as to save the required area of substrate and production cost.
摘要:
The invention discloses a package structure for better heat-dissipation or EMI performance. A first conductive element and a second conductive element are both disposed between the top lead frame and the bottom lead frame. The first terminal of the first conductive element is electrically connected to the bottom lead frame, and the second terminal of the first conductive element is electrically connected to the top lead frame. The third terminal of the second conductive element is electrically connected to the bottom lead frame, and the fourth terminal of the second conductive element is electrically connected to the top lead frame. In one embodiment, a heat dissipation device is disposed on the top lead frame. In one embodiment, the molding compound is provided such that the outer leads of the top lead frame are exposed outside the molding compound.
摘要:
A power conversion module includes a circuit carrier board, a semiconductor module and an inductor module. The circuit carrier board has plural bonding pads. The semiconductor module is disposed on a first surface of the circuit carrier board. The inductor module has plural pins. The pins are extended from the inductor module along a first direction and connected with corresponding bonding pads on the circuit carrier board, so that a receptacle is defined between the inductor module and the circuit carrier board for accommodating the semiconductor module.
摘要:
A chip package comprising a substrate, a lead frame, a chip, a set of bonded wires, a heat sink and a packaging material is provided. The substrate has a first metallic layer, a second metallic layer and a conductor. The first metallic layer is formed on a first surface of the substrate and the second metallic layer is formed on a second surface of the substrate. The conductor is formed on a lateral surface of the substrate. The first metallic layer is electrically connected to the second metallic layer through the conductor. The lead frame is attached on the first surface of the substrate and is electrically connected to the first metallic layer. The chip has a back surface attached to the lead frame or the first surface of the substrate. The chip is connected with the lead frame through the bonding wires. The heat sink is attached on the second surface of the substrate and electrically connected with the second metallic layer. The packaging material encapsulates the chip, the bonded wires and the lead frame.
摘要:
The invention discloses a package structure with an overlaying metallic material overlaying a solder material. A substrate comprises a first solder pad and a second solder pad thereon. A conductive element on the substrate comprises a first electrode and a second electrode thereon. A solder material electrically connects the first solder pad and the second solder pad to the first electrode and the second electrode respectively. An overlaying metallic material overlays the exposed areas of the solder metallic material, the first solder pad, the second solder pad, the first electrode and the second electrode, wherein the exposed areas comprise metallic material having a lower melting point than the second metallic material.