MOSFET pair with stack capacitor and manufacturing method thereof
    34.
    发明授权
    MOSFET pair with stack capacitor and manufacturing method thereof 有权
    MOSFET堆叠电容器及其制造方法

    公开(公告)号:US08269330B1

    公开(公告)日:2012-09-18

    申请号:US13092163

    申请日:2011-04-22

    IPC分类号: H01L23/02

    摘要: A MOSFET pair with a stack capacitor is disclosed herein. It can regulate the input voltage and optimize a short EMI loop. It has a bottom lead frame and an up lead frame, which can simultaneously dissipate the heat generated by two MOSFETs to achieve excellent thermal-dissipation. It can adopt solder, Ag epoxy, or gold balls to implement the electrical bonding of two MOSFETs with the bottom lead frame and the up lead frame to achieve excellent structural flexibility. A device, such as an IGBT, a diode, an inductor, a choke, and a heat sink, can be stacked above the up lead frame to form a powerful SiP module. A corresponding method of manufacturing the MOSFET pair with a stack capacitor is also disclosed herein, which is simple, time-saving, flexible, cost-effective, and facile.

    摘要翻译: 本文公开了具有堆叠电容器的MOSFET对。 它可以调节输入电压并优化短路电流环路。 它具有底部引线框架和引脚框架,可以同时消散两个MOSFET产生的热量,从而实现出色的散热。 它可以采用焊料,Ag环氧树脂或金球,以实现两个MOSFET与底部引线框架和上引线框架的电连接,以实现优异的结构灵活性。 诸如IGBT,二极管,电感器,扼流器和散热器的器件可以堆叠在引导框架上方以形成强大的SiP模块。 本文还公开了制造具有堆叠电容器的MOSFET对的相应方法,其简单,省时,灵活,成本有效且容易。

    Chip package and substrate
    39.
    发明申请
    Chip package and substrate 审中-公开
    芯片封装和基板

    公开(公告)号:US20050093121A1

    公开(公告)日:2005-05-05

    申请号:US10707865

    申请日:2004-01-20

    摘要: A chip package comprising a substrate, a lead frame, a chip, a set of bonded wires, a heat sink and a packaging material is provided. The substrate has a first metallic layer, a second metallic layer and a conductor. The first metallic layer is formed on a first surface of the substrate and the second metallic layer is formed on a second surface of the substrate. The conductor is formed on a lateral surface of the substrate. The first metallic layer is electrically connected to the second metallic layer through the conductor. The lead frame is attached on the first surface of the substrate and is electrically connected to the first metallic layer. The chip has a back surface attached to the lead frame or the first surface of the substrate. The chip is connected with the lead frame through the bonding wires. The heat sink is attached on the second surface of the substrate and electrically connected with the second metallic layer. The packaging material encapsulates the chip, the bonded wires and the lead frame.

    摘要翻译: 提供了包括基板,引线框架,芯片,一组接合线,散热器和封装材料的芯片封装。 基板具有第一金属层,第二金属层和导体。 第一金属层形成在基板的第一表面上,第二金属层形成在基板的第二表面上。 导体形成在基板的侧表面上。 第一金属层通过导体与第二金属层电连接。 引线框架安装在基板的第一表面上并与第一金属层电连接。 芯片具有附接到引线框架或基板的第一表面的后表面。 芯片通过接合线与引线框架连接。 散热器安装在基板的第二表面上并与第二金属层电连接。 封装材料封装芯片,接合线和引线框架。