HANDLER WAFER REMOVAL
    36.
    发明申请
    HANDLER WAFER REMOVAL 有权
    处理器拆卸

    公开(公告)号:US20150132924A1

    公开(公告)日:2015-05-14

    申请号:US14078990

    申请日:2013-11-13

    Abstract: A method of removing a handler wafer. There is provided a handler wafer and a semiconductor device wafer having a plurality of semiconductor devices, the semiconductor device wafer having an active surface side and an inactive surface side. An amorphous carbon layer is applied to a surface of the handler wafer. An adhesive layer is applied to at least one of the amorphous carbon layer of the handler wafer and the active surface side of the semiconductor device wafer. The handler wafer is joined to the semiconductor device wafer through the adhesive layer or layers. Laser radiation is applied to the handler wafer to cause heating of the amorphous carbon layer that in turn causes heating of the adhesive layer or layers. The plurality of semiconductor devices of the semiconductor device wafer are then separated from the handler wafer.

    Abstract translation: 一种去除处理器晶片的方法。 提供了具有多个半导体器件的处理器晶片和半导体器件晶片,半导体器件晶片具有有源表面侧和非活性表面侧。 将无定形碳层施加到处理器晶片的表面。 将粘合剂层施加到处理器晶片的无定形碳层和半导体器件晶片的有源表面侧中的至少一个。 处理器晶片通过粘合层或多层结合到半导体器件晶片。 将激光辐射施加到处理器晶片,以引起无定形碳层的加热,这又导致粘合剂层或层的加热。 然后将半导体器件晶片的多个半导体器件与处理器晶片分离。

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