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    Non-lithographic formation of three-dimensional conductive elements
    36.
    发明授权
    Non-lithographic formation of three-dimensional conductive elements 有权
    三维导电元件的非平版印刷法

    公开(公告)号：US08697569B2

    公开(公告)日：2014-04-15

    申请号：US12842669

    申请日：2010-07-23

    申请人： Vage Oganesian ,  Belgacem Haba ,  Ilyas Mohammed ,  Craig Mitchell ,  Piyush Savalia

    发明人： Vage Oganesian ,  Belgacem Haba ,  Ilyas Mohammed ,  Craig Mitchell ,  Piyush Savalia

    IPC分类号： H01L21/4763 ,  H01L23/48 ,  H01L21/70

    CPC分类号： H01L21/76879 ,  H01L21/76802 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/4985 ,  H01L23/5226 ,  H01L24/06 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/00

    摘要： A method of forming a conductive element on a substrate and the resulting assembly are provided. The method includes forming a groove in a sacrificial layer overlying a dielectric region disposed on a substrate. The groove preferably extends along a sloped surface of the substrate. The sacrificial layer is preferably removed by a non-photolithographic method, such as ablating with a laser, mechanical milling, or sandblasting. A conductive element is formed in the groove. The grooves may be formed. The grooves and conductive elements may be formed along any surface of the substrate, including within trenches and vias formed therein, and may connect to conductive pads on the front and/or rear surface of the substrate. The conductive elements are preferably formed by plating and may or may not conform to the surface of the substrate.

    摘要翻译： 提供了在基板上形成导电元件的方法和所得到的组件。 该方法包括在覆盖设置在基板上的电介质区域上的牺牲层中形成凹槽。 槽优选地沿着衬底的倾斜表面延伸。 牺牲层优选通过非光刻方法去除，例如用激光烧蚀，机械研磨或喷砂。 在沟槽中形成导电元件。 可以形成凹槽。 凹槽和导电元件可以沿着衬底的任何表面形成，包括在其中形成的沟槽和通孔内，并且可以连接到衬底的前表面和/或后表面上的导电焊盘。 导电元件优选通过电镀形成，并且可以或可以不与基板的表面一致。

    Stacked microelectronic assembly having interposer connecting active chips
    37.
    发明授权
    Stacked microelectronic assembly having interposer connecting active chips 有权
    具有插入器的堆叠的微电子组件连接有源芯片

    公开(公告)号：US08637968B2

    公开(公告)日：2014-01-28

    申请号：US12958866

    申请日：2010-12-02

    申请人： Belgacem Haba ,  Vage Oganesian ,  Ilyas Mohammed ,  Piyush Savalia ,  Craig Mitchell

    发明人： Belgacem Haba ,  Vage Oganesian ,  Ilyas Mohammed ,  Piyush Savalia ,  Craig Mitchell

    IPC分类号： H01L23/48 ,  H01L23/02 ,  H01L29/40

    CPC分类号： H01L25/0657 ,  H01L21/486 ,  H01L21/76898 ,  H01L23/36 ,  H01L23/481 ,  H01L23/49822 ,  H01L23/49827 ,  H01L25/16 ,  H01L2224/16225 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06572 ,  H01L2924/15311

    摘要： A microelectronic assembly can include first and second microelectronic elements each embodying active semiconductor devices adjacent a front surface thereof, and having an electrically conductive pad exposed at the respective front surface. An interposer of material having a CTE less than 10 ppm/° C. has first and second surfaces attached to the front surfaces of the respective first and second microelectronic elements, the interposer having a second conductive element extending within an opening in the interposer. First and second conductive elements extend within openings extending from the rear surface of a respective microelectronic element of the first and second microelectronic elements towards the front surface of the respective microelectronic element. In one example, one or more of the first or second conductive elements extends through the respective first or second pad, and the conductive elements contact the exposed portions of the second conductive element to provide electrical connection therewith.

    摘要翻译： 微电子组件可以包括第一和第二微电子元件，每个微电子元件各自体现邻近其前表面的有源半导体器件，并且具有在相应的前表面处暴露的导电焊盘。 具有小于10ppm /℃的CTE的材料的插入件具有附接到相应的第一和第二微电子元件的前表面的第一和第二表面，所述插入件具有在插入器的开口内延伸的第二导电元件。 第一和第二导电元件在从第一和第二微电子元件的相应微电子元件的后表面朝向相应微电子元件的前表面延伸的开口内延伸。 在一个示例中，第一或第二导电元件中的一个或多个延伸穿过相应的第一或第二焊盘，并且导电元件接触第二导电元件的暴露部分以提供与其的电连接。