Abstract:
A method includes forming a dielectric layer over a substrate, forming an interconnect structure over the dielectric layer, and bonding a die to the interconnect structure. The substrate is then removed, and the dielectric layer is patterned. Connectors are formed at a surface of the dielectric layer, wherein the connectors are electrically coupled to the die.
Abstract:
A die having a ledge along a sidewall, and a method of forming the die, is provided. A method of packaging the die is also provided. A substrate, such as a processed wafer, is diced by forming a first notch having a first width, and then forming a second notch within the first notch such that the second notch has a second width less than the first width. The second notch extends through the substrate, thereby dicing the substrate. The difference in widths between the first width and the second width results in a ledge along the sidewalls of the dice. The dice may be placed on a substrate, e.g., an interposer, and underfill placed between the dice and the substrate. The ledge prevents or reduces the distance the underfill is drawn up between adjacent dice. A molding compound may be formed over the substrate.
Abstract:
A method comprises attaching a first side of an interposer on a carrier wafer. The first side of the interposer comprises a plurality of bumps. The carrier wafer comprises a plurality of cavities formed in the carrier wafer. Each bump on the first side of the interposer can fit into its corresponding cavity on the carrier wafer. Subsequently, the method comprises attaching a semiconductor die on the second side of the interposer to form a wafer stack, detaching the wafer stack from the carrier wafer and attaching the wafer stack to a substrate.
Abstract:
Methods and apparatus for performing molding on die on wafer interposers. A method includes receiving an interposer assembly having a die side and an opposite side including two or more integrated circuit dies mounted on the die side of the interposer, the interposer assembly having spaces formed on the die side of the interposer between the two or more integrated circuit dies; mounting at least one stress relief feature on the die side of the interposer assembly in one of the spaces between the two or more integrated circuit dies; and molding the integrated circuit dies using a mold compound, the mold compound surrounding the two or more integrated circuit dies and the at least one stress relief feature. An apparatus is disclosed having integrated circuits mounted on a die side of an interposer, stress relief features between the integrated circuits and mold compound over the integrated circuits.
Abstract:
A method and apparatus for separating a substrate into individual dies and the resulting structure is provided. A modification layer, such as an amorphous layer, is formed within the substrate. A laser focused within the substrate may be used to create the modification layer. The modification layer creates a relatively weaker region that is more prone to cracking than the surrounding substrate material. As a result, the substrate may be pulled apart into separate sections, causing cracks the substrate along the modification layers. Dice or other components may be attached to the substrate before or after separation.
Abstract:
A package includes a die having a conductive pad at a top surface of the die, a stud bump over and connected to the conductive pad, and a redistribution line over and connected to the stud bump. An electrical connector is over and electrically coupled to the redistribution line.
Abstract:
A method includes molding a polymer onto a package component. The step of molding includes a first molding stage performed at a first temperature, and a second molding stage performed at a second temperature different from the first temperature.
Abstract:
The present disclosure provides one embodiment of an integrated circuit (IC) fabrication method to form an IC structure having one or more through silicon via (TSV) features. The IC fabrication method includes performing a plurality of processing steps; collecting physical metrology data from the plurality of processing steps; collecting virtual metrology data from the plurality of processing steps based on the physical metrology data; generating a yield prediction to the IC structure based on the physical metrology data and the virtual metrology data; and identifying an action at an earlier processing step based on the yield prediction.
Abstract:
Methods of packaging semiconductor devices and structures thereof are disclosed. In one embodiment, a method of packaging a semiconductor device includes providing a carrier wafer, providing a plurality of dies, and forming a die cave material over the carrier wafer. A plurality of die caves is formed in the die cave material. At least one of the plurality of dies is placed within each of the plurality of die caves in the die cave material. A plurality of packages is formed, each of the plurality of packages being formed over a respective at least one of the plurality of dies.
Abstract:
A device includes a substrate having a front side and a backside, a through-via extending from the backside to the front side of the substrate, and a conductive pad on the backside of the substrate and over the through-via. The conductive pad has a substantially planar top surface. A conductive bump has a non-planar top surface over the substantially planar top surface and aligned to the through-via. The conductive bump and the conductive pad are formed of a same material. No interface is formed between the conductive bump and the conductive pad.