公开(公告)号：US09340899B2

公开(公告)日：2016-05-17

申请号：US14305734

申请日：2014-06-16

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Asako Hirai ,  Zhongyuan Jia ,  Makoto Saito ,  Hisashi Yamada ,  Kenji Iso ,  Steven P. DenBaars ,  Shuji Nakamura ,  James S. Speck

IPC: H01L21/02 ,  C30B23/02 ,  C30B25/18 ,  C30B29/40 ,  H01L29/04 ,  H01L29/16 ,  H01L29/20 ,  H01L29/26 ,  C30B23/06 ,  H01L31/0304 ,  H01L31/036 ,  H01L31/18 ,  H01L33/00 ,  H01L33/16 ,  H01L33/32

CPC classification number: C30B29/406 ,  C30B23/025 ,  C30B23/066 ,  C30B25/18 ,  C30B25/186 ,  C30B25/20 ,  C30B29/403 ,  C30B29/60 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/02565 ,  H01L21/02609 ,  H01L21/02617 ,  H01L21/02636 ,  H01L29/04 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/26 ,  H01L31/03044 ,  H01L31/036 ,  H01L31/1856 ,  H01L33/0075 ,  H01L33/16 ,  H01L33/32 ,  H01S5/34333 ,  Y10T428/24612

Abstract: A nonpolar III-nitride film grown on a miscut angle of a substrate, in order to suppress the surface undulations, is provided. The surface morphology of the film is improved with a miscut angle towards an a-axis direction comprising a 0.15° or greater miscut angle towards the a-axis direction and a less than 30° miscut angle towards the a-axis direction.

Abstract translation: 提供了为了抑制表面波动而在衬底的错误角度上生长的非极性III族氮化物膜。 膜的表面形态通过朝向a轴方向的误差角而改进，包括朝向a轴方向的0.15°或更大的误差角和朝向a轴方向的小于30°的倾斜角。

公开(公告)号：US08866126B2

公开(公告)日：2014-10-21

申请号：US13904908

申请日：2013-05-29

Applicant: The Regents of the University of California

Inventor： Hiroaki Ohta ,  Feng Wu ,  Anurag Tyagi ,  Arpan Chakraborty ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura ,  Erin C. Young

IPC: H01L33/12 ,  B82Y20/00 ,  H01L21/02 ,  H01S5/34 ,  H01S5/32 ,  H01L33/00 ,  H01S5/343 ,  H01S5/22 ,  H01L33/32 ,  H01L33/16

CPC classification number: H01S5/34333 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L33/0075 ,  H01L33/12 ,  H01L33/16 ,  H01L33/32 ,  H01S5/2201 ,  H01S5/32 ,  H01S5/3201 ,  H01S5/3202 ,  H01S5/3403 ,  H01S5/3425 ,  H01S2301/173

Abstract: An epitaxial structure for a III-Nitride based optical device, comprising an active layer with anisotropic strain on an underlying layer, where a lattice constant and strain in the underlying layer are partially or fully relaxed in at least one direction due to a presence of misfit dislocations, so that the anisotropic strain in the active layer is modulated by the underlying layer.

Abstract translation: 用于基于III-Nitride的光学器件的外延结构，其包括在下层上具有各向异性应变的活性层，其中由于存在失配而使底层中的晶格常数和应变在至少一个方向上部分或完全松弛 位错，使得有源层中的各向异性应变被下层调制。

公开(公告)号：US11532922B2

公开(公告)日：2022-12-20

申请号：US16652282

申请日：2018-10-02

Applicant: The Regents of the University of California

Inventor： Charles Forman ,  SeungGeun Lee ,  Erin C. Young ,  Jared Kearns ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

IPC: H01S5/00 ,  H01S5/183 ,  H01S5/02 ,  H01S5/024 ,  H01S5/30 ,  H01S5/343 ,  H01S5/0234 ,  H01S5/0237 ,  H01S5/02355 ,  H01S5/32 ,  H01S5/10

Abstract: A Vertical Cavity Surface Emitting Laser (VCSEL) including a light emitting III-nitride active region including quantum wells (QWs), wherein each of the quantum wells have a thickness of more than 8 nm, a cavity length of at least 7 λ, or at least 20 λ, where lambda is a peak wavelength of the light emitted from the active region, layers with reduced surface roughness, a tunnel junction intracavity contact. The VCSEL is flip chip bonded using In—Au bonding. This is the first report of a VCSEL capable of continuous wave operation.

公开(公告)号：US20220181513A1

公开(公告)日：2022-06-09

申请号：US17539345

申请日：2021-12-01

Applicant: The Regents of the University of California

Inventor： Erin C. Young ,  Benjamin P. Yonkee ,  John T. Leonard ,  Tal Margalith ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L33/00 ,  H01L33/32 ,  H01L33/14 ,  H01L21/00 ,  H01L31/0304 ,  C30B23/02 ,  H01L21/02 ,  C30B29/68 ,  H01S5/40 ,  C30B25/20 ,  H01L33/04 ,  C30B29/40 ,  H01S5/30 ,  H01L31/147 ,  H01L33/06

Abstract: A hybrid growth method for III-nitride tunnel junction devices uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and ammonia-assisted or plasma-assisted molecular beam epitaxy (MBE) to grow one or more tunnel junctions. Unlike p-type gallium nitride (p-GaN) grown by MOCVD, p-GaN grown by MBE is conductive as grown, which allows for its use in a tunnel junction. Moreover, the doping limits of MBE materials are higher than MOCVD materials. The tunnel junctions can be used to incorporate multiple active regions into a single device. In addition, n-type GaN (n-GaN) can be used as a current spreading layer on both sides of the device, eliminating the need for a transparent conductive oxide (TCO) layer or a silver (Au) mirror.

公开(公告)号：US10985285B2

公开(公告)日：2021-04-20

申请号：US16325246

申请日：2017-08-17

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Benjamin P. Yonkee ,  Asad J. Mughal ,  David Hwang ,  Erin C. Young ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L31/0304 ,  H01L29/207 ,  H01L33/32 ,  H01L33/00 ,  H01L21/02 ,  H01L29/36

Abstract: A physical vapor deposition (e.g., sputter deposition) method for III-nitride tunnel junction devices uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and electron cyclotron resonance (ECR) sputtering to grow one or more tunnel junctions. In another method, the surface of the p-type layer is treated before deposition of the tunnel junction on the p-type layer. In yet another method, the whole device (including tunnel junction) is grown using MOCVD and the p-type layers of the III-nitride material are reactivated by lateral diffusion of hydrogen through mesa sidewalls in the III-nitride material, with one or more lateral dimensions of the mesa that are less than or equal to about 200 μm. A flip chip display device is also disclosed.

公开(公告)号：US20200244036A1

公开(公告)日：2020-07-30

申请号：US16652282

申请日：2018-10-02

Applicant: The Regents of the University of California

Inventor： Charles Forman ,  SeungGeun Lee ,  Erin C. Young ,  Jared Kearns ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

IPC: H01S5/022 ,  H01S5/02 ,  H01S5/024 ,  H01S5/183 ,  H01S5/30 ,  H01S5/343

Abstract: A Vertical Cavity Surface Emitting Laser (VCSEL) including a light emitting III-nitride active region including quantum wells (QWs), wherein each of the quantum wells have a thickness of more than 8 nm, a cavity length of at least 7 λ, or at least 20 λ, where lambda is a peak wavelength of the light emitted from the active region, layers with reduced surface roughness, a tunnel junction intracavity contact. The VCSEL is flip chip bonded using In-Au bonding. This is the first report of a VCSEL capable of continuous wave operation.

公开(公告)号：US20200243334A1

公开(公告)日：2020-07-30

申请号：US16752428

申请日：2020-01-24

Applicant: The Regents of the University of California

Inventor： Christian J. Zollner ,  Michael Iza ,  James S. Speck ,  Shuji Nakamura ,  Steven P. DenBaars

IPC: H01L21/02 ,  H01L29/201 ,  H01L29/20

Abstract: A method for protecting a semiconductor film comprised of one or more layers during processing. The method includes placing a surface of the semiconductor film in direct contact with a surface of a protective covering, such as a separate substrate piece, that forms an airtight or hermetic seal with the surface of the semiconductor film, so as to reduce material degradation and evaporation in the semiconductor film. The method includes processing the semiconductor film under some conditions, such as a thermal annealing and/or controlled ambient, which might cause the semiconductor film's evaporation or degradation without the protective covering.

公开(公告)号：US20180374699A1

公开(公告)日：2018-12-27

申请号：US15773864

申请日：2016-11-01

Applicant: The Regents of the University of California

Inventor： Benjamin P. Yonkee ,  Erin C. Young ,  John T. Leonard ,  Tal Margalith ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L21/02 ,  H01L29/15 ,  H01L29/20 ,  H01L29/207 ,  H01L29/36 ,  H01L29/885 ,  H01L31/18 ,  H01L31/0352 ,  H01L31/0304 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01L21/02584 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/0262 ,  H01L21/02631 ,  H01L29/15 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/365 ,  H01L29/88 ,  H01L29/885 ,  H01L31/03044 ,  H01L31/035236 ,  H01L31/1856 ,  H01L33/0075 ,  H01L33/04 ,  H01L33/06 ,  H01L33/32

Abstract: A III-nitride tunnel junction with a modified p-n interface, wherein the modified p-n interface includes a delta-doped layer to reduce tunneling resistance. The delta-doped layer may be doped using donor atoms comprised of Oxygen (O), Germanium (Ge) or Silicon (Si); acceptor atoms comprised of Magnesium (Mg) or Zinc (Zn); or impurities comprised of Iron (Fe) or Carbon (C).

公开(公告)号：US09828695B2

公开(公告)日：2017-11-28

申请号：US15134081

申请日：2016-04-20

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Asako Hirai ,  Zhongyuan Jia ,  Makoto Saito ,  Hisashi Yamada ,  Kenji Iso ,  Steven P. DenBaars ,  Shuji Nakamura ,  James S. Speck

IPC: H01L21/02 ,  C30B29/40 ,  C30B25/18 ,  H01L29/04 ,  H01L29/16 ,  H01L29/20 ,  H01L29/26 ,  C30B23/02 ,  C30B23/06 ,  H01L31/0304 ,  H01L31/036 ,  H01L31/18 ,  H01L33/00 ,  H01L33/16 ,  H01L33/32 ,  C30B25/20 ,  C30B29/60 ,  H01S5/343

CPC classification number: C30B29/406 ,  C30B23/025 ,  C30B23/066 ,  C30B25/18 ,  C30B25/186 ,  C30B25/20 ,  C30B29/403 ,  C30B29/60 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/02565 ,  H01L21/02609 ,  H01L21/02617 ,  H01L21/02636 ,  H01L29/04 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/26 ,  H01L31/03044 ,  H01L31/036 ,  H01L31/1856 ,  H01L33/0075 ,  H01L33/16 ,  H01L33/32 ,  H01S5/34333 ,  Y10T428/24612

Abstract: A nonpolar III-nitride film grown on a miscut angle of a substrate, in order to suppress the surface undulations, is provided. The surface morphology of the film is improved with a miscut angle towards an a-axis direction comprising a 0.15° or greater miscut angle towards the a-axis direction and a less than 30° miscut angle towards the a-axis direction.

公开(公告)号：US20170236807A1

公开(公告)日：2017-08-17

申请号：US15582215

申请日：2017-04-28

Applicant: The Regents of the University of California

Inventor： David Hwang ,  Nathan G. Young ,  Ben Yonkee ,  Burhan K. Saifaddin ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

IPC: H01L25/075 ,  H01L33/06 ,  H01L33/00 ,  H01L33/62 ,  H01L33/32 ,  H01L33/48

CPC classification number: H01L33/0075 ,  H01L25/0753 ,  H01L33/0079 ,  H01L33/32 ,  H01L33/486

Abstract: III-V micro light-emitting diodes (LEDs) are fabricated using a photoelectrochemical (PEC) etch. A sacrificial layer and III-V device layers are epitaxially grown on a host substrate, wherein the III-V device layers are patterned to form the micro-LEDs. The sacrificial layer is removed by a photoelectrochemical (PEC) etch, so as to fully or partially separate the micro-LEDs from the substrate, before or after the micro-LEDs are bonded to a submount or intermediate substrate. The micro-LEDs may be bonded to a submount with a polymer film deposited thereon, wherein the polymer film with the micro-LEDs is subsequently delaminated from the submount. Alternatively, the intermediate substrate may be a transfer medium, wherein the micro-LEDs are separated from the host substrate by mechanical fracturing, and then bonded to a second substrate, after which the intermediate substrate is removed, wherein a third substrate may be bonded to exposed surfaces of the transferred micro-LEDs.