公开(公告)号：US07220921B1

公开(公告)日：2007-05-22

申请号：US09678142

申请日：2000-10-03

申请人： Noriaki Sakamoto ,  Yoshiyuki Kobayashi ,  Junji Sakamoto ,  Shigeaki Mashimo ,  Katsumi Okawa ,  Eiju Maehara ,  Kouji Takahashi

发明人： Noriaki Sakamoto ,  Yoshiyuki Kobayashi ,  Junji Sakamoto ,  Shigeaki Mashimo ,  Katsumi Okawa ,  Eiju Maehara ,  Kouji Takahashi

IPC分类号： H01R12/04 ,  H05K1/11

CPC分类号： H01L21/4832 ,  H01L21/561 ,  H01L21/565 ,  H01L21/566 ,  H01L23/49541 ,  H01L23/49575 ,  H01L24/05 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/97 ,  H01L25/50 ,  H01L2221/68377 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05556 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48464 ,  H01L2224/48599 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01058 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01087 ,  H01L2924/014 ,  H01L2924/13055 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/00012

摘要： In the present invention there is formed a sheet-like board member 50 having conductive coating films, such as first pads 55 and die pads 59, formed thereon or a sheet-like board member 50 which has been half-etched by using conductive coating films such as first pads 55 and die pads 59. A hybrid IC can be manufactured by means of utilization of post-processing processes of a semiconductor manufacturer. Further, a hybrid IC can be manufactured without adoption of a support board, and hence there can be manufactured a hybrid IC which is of lower profile and has superior heat dissipation characteristics.

摘要翻译： 在本发明中，形成有具有导电性涂膜的片状基板部件50，例如形成在其上的第一焊盘55和焊盘59，或者通过使用导电性涂膜半刻蚀的片状基板部件50 例如第一焊盘55和焊盘59。 可以通过利用半导体制造商的后处理工艺来制造混合IC。 此外，可以在不采用支撑板的情况下制造混合IC，因此可以制造具有较低轮廓并具有优异散热特性的混合IC。

公开(公告)号：US20060226029A1

公开(公告)日：2006-10-12

申请号：US10566155

申请日：2004-07-30

申请人： Takeshi Nishida ,  Hideaki Hashimoto ,  Fumiyo Kusu ,  Hideki Hakamata ,  Akira Kotani ,  Kouji Takahashi

发明人： Takeshi Nishida ,  Hideaki Hashimoto ,  Fumiyo Kusu ,  Hideki Hakamata ,  Akira Kotani ,  Kouji Takahashi

IPC分类号： G01N27/26

CPC分类号： G01N30/84 ,  G01N2030/645 ,  G01N2030/8429 ,  G01N2800/065

摘要： A measurement apparatus for ulcerative colitis diagnosis and prognostic test according to the present invention comprises a solution mixing unit (15) for mixing an eluent and a quinone solution, the eluent being supplied from a system including a tank (9) in which the eluent used for acid separation is stored, a pump (12) for sending the eluent, a sample injection unit (13) for injecting a sample into the eluent, and an acid separation column (14) for separating short-chain fatty acids included in the sample that is injected from the sample injection unit (13), and the quinone solution being supplied from a system including a tank (8) in which the quinone solution containing quinone and supporting electrolyte is stored, and a pump (11) for sending the quinone solution; and an acid degree measurement unit (16) for measuring the acid degrees of the short-chain fatty acids separated from the sample. In the measurement apparatus for ulcerative colitis diagnosis and prognostic test which is constructed as described above, it is possible to perform ulcerative colitis diagnosis speedily, easily, and accurately, without performing blood test.

摘要翻译： 根据本发明的用于溃疡性结肠炎诊断和预后测试的测量装置包括用于混合洗脱液和醌溶液的溶液混合单元（15），洗脱液由包括其中使用洗脱液的罐（9）的系统供应， 储存酸分离液，用于送出洗脱液的泵（12），用于将样品注入洗脱液的样品注入单元（13）和用于分离样品中所含的短链脂肪酸的酸分离塔（14） 从所述样品注入单元（13）注入的醌溶液和从包含其中存储有醌和支持电解质的醌溶液的罐（8）的系统供给的醌溶液和用于发送醌的泵（11） 解; 以及用于测量从样品分离出的短链脂肪酸的酸度的酸度测定单元（16）。 在如上构造的溃疡性结肠炎诊断和预后测定用测定装置中，能够不进行血液试验而快速，容易，准确地进行溃疡性结肠炎诊断。

公开(公告)号：US07053492B2

公开(公告)日：2006-05-30

申请号：US10632623

申请日：2003-08-01

申请人： Kouji Takahashi ,  Kazuhisa Kusano ,  Noriaki Sakamoto

发明人： Kouji Takahashi ,  Kazuhisa Kusano ,  Noriaki Sakamoto

IPC分类号： H01L23/52 ,  H01L23/48 ,  H01L29/40

CPC分类号： H01L24/83 ,  C25D7/12 ,  H01L21/4832 ,  H01L23/3107 ,  H01L23/49582 ,  H01L23/498 ,  H01L23/49838 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/97 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05555 ,  H01L2224/05647 ,  H01L2224/26175 ,  H01L2224/291 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/8319 ,  H01L2224/83801 ,  H01L2224/85205 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01059 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2224/83 ,  H01L2224/85 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/01026 ,  H01L2224/83205 ,  H01L2924/00012

摘要： The overflow of a brazing material (19) from a die pad (11) is prevented by forming a second plating film (14B) on the surface of the die pad (11). The second plating film (14B) is provided around the surface of the die pad 11 so as to enclose an area where a semiconductor element (13) is mounted. In a step of mounting the semiconductor element (13) on the die pad (11) with the brazing material (19), the brazing material (19) overflows from the first plating film (14A) when the semiconductor element (13) is mounted on the upper part of the molten brazing material. However, the second plating film (14B) functions as a blocking area by which the overflow of the brazing material is prevented. Therefore, a short circuit can be prevented from arising between the die pad (11) and the bonding pad (12) because of the brazing material that has spread.

摘要翻译： 通过在管芯焊盘（11）的表面上形成第二镀膜（14B）来防止钎焊材料（19）从管芯焊盘（11）溢出。 第二电镀膜（14B）设置在芯片焊盘11的表面周围，以包围安装半导体元件（13）的区域。 在利用钎料（19）将半导体元件（13）安装在芯片焊盘（11）上的步骤中，半导体元件（13）为半导体元件（13）时，钎焊材料（19）从第一镀膜（14A）溢出 安装在熔融钎焊材料的上部。 然而，第二电镀膜（14B）用作防止钎焊材料的溢出的阻挡区域。 因此，由于已经扩展的钎焊材料，可以防止在芯片焊盘（11）和焊盘（12）之间产生短路。

公开(公告)号：US06975022B2

公开(公告)日：2005-12-13

申请号：US09809917

申请日：2001-03-16

申请人： Noriaki Sakamoto ,  Yoshiyuki Kobayashi ,  Junji Sakamoto ,  Shigeaki Mashimo ,  Katsumi Okawa ,  Eiju Maehara ,  Kouji Takahashi

发明人： Noriaki Sakamoto ,  Yoshiyuki Kobayashi ,  Junji Sakamoto ,  Shigeaki Mashimo ,  Katsumi Okawa ,  Eiju Maehara ,  Kouji Takahashi

IPC分类号： H01L23/28 ,  H01L21/48 ,  H01L21/56 ,  H01L23/12 ,  H01L23/31 ,  H01L23/50 ,  H01L23/495

CPC分类号： H01L24/32 ,  H01L21/4832 ,  H01L21/561 ,  H01L23/3128 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/97 ,  H01L2221/68377 ,  H01L2224/05554 ,  H01L2224/16225 ,  H01L2224/16245 ,  H01L2224/32057 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/484 ,  H01L2224/48463 ,  H01L2224/48472 ,  H01L2224/48599 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48655 ,  H01L2224/48669 ,  H01L2224/48699 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/48755 ,  H01L2224/48769 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/83385 ,  H01L2224/85201 ,  H01L2224/85205 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85455 ,  H01L2224/85469 ,  H01L2224/92 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/10161 ,  H01L2924/14 ,  H01L2924/15183 ,  H01L2924/15184 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/00014 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2224/81 ,  H01L2224/92247 ,  H01L2924/00 ,  H01L2924/01026 ,  H01L2924/00012

摘要： A device containing a flat member is provided, having a pattern for a bonding pad, a wiring, and an electrode, by half-etching through the flat member.

摘要翻译： 提供一种包含平坦部件的装置，其具有用于焊盘，布线和电极的图案，通过半平板部件的半蚀刻。

公开(公告)号：US20050206014A1

公开(公告)日：2005-09-22

申请号：US11119439

申请日：2005-04-29

申请人： Noriaki Sakamoto ,  Yoshiyuki Kobayashi ,  Junji Sakamoto ,  Yukio Okada ,  Yusuke Igarashi ,  Eiju Maehara ,  Kouji Takahashi ,  Takeshi Nakamura

发明人： Noriaki Sakamoto ,  Yoshiyuki Kobayashi ,  Junji Sakamoto ,  Yukio Okada ,  Yusuke Igarashi ,  Eiju Maehara ,  Kouji Takahashi ,  Takeshi Nakamura

IPC分类号： H01L21/48 ,  H01L23/31 ,  H01L23/48 ,  H01L23/495

CPC分类号： H01L23/3121 ,  H01L21/4828 ,  H01L21/4832 ,  H01L23/3107 ,  H01L23/3128 ,  H01L23/49513 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/97 ,  H01L2221/68377 ,  H01L2224/05554 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/83385 ,  H01L2224/83855 ,  H01L2224/83856 ,  H01L2224/85447 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01059 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2224/92247 ,  H01L2924/00 ,  H01L2924/01026 ,  H01L2924/00012

摘要： As conductive patterns 11A to 11D are formed burying in a insulating resin 10 and a conductive foil 20 is formed being half-etched, thickness of the device is made thin. As an electrode for radiation 11D is provided, a semiconductor device superior in radiation is provided.

公开(公告)号：US06933604B2

公开(公告)日：2005-08-23

申请号：US09810117

申请日：2001-03-16

申请人： Noriaki Sakamoto ,  Yoshiyuki Kobayashi ,  Junji Sakamoto ,  Yukio Okada ,  Yusuke Igarashi ,  Eiju Maehara ,  Kouji Takahashi

发明人： Noriaki Sakamoto ,  Yoshiyuki Kobayashi ,  Junji Sakamoto ,  Yukio Okada ,  Yusuke Igarashi ,  Eiju Maehara ,  Kouji Takahashi

IPC分类号： H01L23/28 ,  H01L21/48 ,  H01L23/12 ,  H01L23/29 ,  H01L23/36 ,  H01L23/42 ,  H01L23/433 ,  H01L25/04 ,  H01L25/18 ,  H05K1/02 ,  H05K1/18 ,  H01L23/34 ,  H01L23/995 ,  H01L921/4763

CPC分类号： H05K1/021 ,  G11B5/4853 ,  H01L21/4832 ,  H01L23/36 ,  H01L23/4334 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/05554 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/73257 ,  H01L2224/85001 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/07802 ,  H01L2924/10161 ,  H01L2924/10162 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18165 ,  H05K1/0204 ,  H05K1/182 ,  H05K1/189 ,  H05K2201/10416 ,  H05K2201/10727 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2924/00012

摘要： The back surface of a semiconductor chip (16) is exposed from the back surface of an insulating resin (13), and a metal plate (23) is affixed to this semiconductor chip (16). The back surface of this metal plate (23) and the back surface of a first supporting member (11) are substantially within a same plane, so that it is readily affixed to a second supporting member (24). Accordingly, the heat generated by the semiconductor chip can be efficiently dissipated via the metal plate (23) and the second supporting member (24).

摘要翻译： 半导体芯片（16）的背面从绝缘树脂（13）的背面露出，金属板（23）固定在该半导体芯片（16）上。 该金属板（23）的后表面和第一支撑构件（11）的后表面基本上位于同一平面内，从而容易地固定在第二支撑构件（24）上。 因此，可以通过金属板（23）和第二支撑构件（24）有效地散发由半导体芯片产生的热量。

公开(公告)号：US20050104198A1

公开(公告)日：2005-05-19

申请号：US10953299

申请日：2004-09-29

申请人： Kouji Takahashi

发明人： Kouji Takahashi

IPC分类号： H01L23/12 ,  H01L21/48 ,  H01L23/31 ,  H01L23/495 ,  H01L23/50 ,  H01L25/04 ,  H01L25/18 ,  H05K1/02 ,  H05K1/18 ,  H05K3/20 ,  H01L21/44 ,  H01L21/50 ,  H01L21/76 ,  H01L23/043

CPC分类号： H01L24/97 ,  H01L21/4832 ,  H01L23/3107 ,  H01L23/49575 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01059 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/13055 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/30105 ,  H05K1/187 ,  H05K3/202 ,  H05K2203/0353 ,  H05K2203/0369 ,  H05K2203/1476 ,  H01L2224/85 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00015 ,  H01L2224/05599

摘要： Provided is a circuit device having conductive patterns which are equally spaced apart and a manufacturing method thereof. A method for manufacturing a circuit device of the present invention includes the steps of: preparing a conductive foil; forming conductive patterns, which are included in a unit having at least regions for mounting circuit elements, by forming isolation trenches having a uniform width in the conductive foil; electrically connecting the conductive patterns to the circuit elements; sealing with a sealing resin so as to cover the circuit elements and to be filled in the isolation trenches; and removing the conductive foil in its thickness portions where no isolation trenches are provided.

摘要翻译： 提供了具有等距间隔的导电图案的电路装置及其制造方法。 本发明的电路装置的制造方法包括以下步骤：制备导电箔; 形成导电图案，其通过形成在导电箔中具有均匀宽度的隔离沟槽而包括在至少具有用于安装电路元件的区域的单元中; 将导电图案电连接到电路元件; 用密封树脂密封以覆盖电路元件并填充在隔离沟槽中; 并且在其不设置隔离沟槽的厚度部分中去除导电箔。

公开(公告)号：US06852010B2

公开(公告)日：2005-02-08

申请号：US10345228

申请日：2003-01-16

申请人： Kouji Takahashi ,  Takemi Miyamoto ,  Hiroshi Tomiyasu ,  Genshichi Hata ,  Tomotaka Yokoyama

发明人： Kouji Takahashi ,  Takemi Miyamoto ,  Hiroshi Tomiyasu ,  Genshichi Hata ,  Tomotaka Yokoyama

IPC分类号： G11B5/73 ,  G11B23/00 ,  B24B1/00 ,  G11B5/82

CPC分类号： G11B5/7315 ,  G11B23/0021 ,  Y10S428/90 ,  Y10T428/21 ,  Y10T428/24355

摘要： A substrate for an information recording medium has a microwaviness average height Ra′ not greater than 0.05 microinch as measured by a contactless laser interference technique for measurement points within a measurement region of 50 μm□-4 mm□ on a surface of the substrate. The microwaviness average height Ra′ is given by: Ra ′ = 1 n ⁢ ∑ i = 1 n ⁢   | xi - x _ | , where xi represents a measurement point value of each measurement point, {overscore (x)} representing an average value of the measurement point values, n representing the number of said measurement points. Alternatively, the substrate has a waviness period between 300 μm and 5 mm and a waviness average height Wa of 1.0 nm or less as measured by the contactless laser interference technique for measurement points in a measurement region surrounded by two concentric circles which is spaced from a center of a surface of the substrate by a predetermined distance. The waviness average height Wa is given by: Wa = 1 N ⁢ ∑ i = 1 N ⁢   | Xi - X _ | where Xi represents a measurement point value of each measurement point, {overscore (X)} representing an average value of the measurement point values, n representing the number of said measurement points.

摘要翻译： 用于信息记录介质的基板具有通过非接触式激光干涉技术测量的微波平均高度Ra'不大于0.05微英寸，用于在基板表面上的测量区域内的测量点为50um□-4mm□。 微波平均高度Ra'由下式给出：其中xi表示每个测量点的测量点值，{overscore（x表示测量点值的平均值，n表示所述测量点的数量，或者，衬底具有 通过非接触式激光干涉技术测量的测量点在300mum至5mm之间的波纹度以及1.0nm或更小的波纹度平均高度Wa，测量点由与两个表面的中心间隔开的两个同心圆包围的测量区域 波纹平均高度Wa由下式给出：其中Xi表示每个测量点的测量点值，（超标（X表示测量点值的平均值，n表示所述测量点的数量） 。

公开(公告)号：US06501162B2

公开(公告)日：2002-12-31

申请号：US09809918

申请日：2001-03-16

申请人： Noriaki Sakamoto ,  Yoshiyuki Kobayashi ,  Junji Sakamoto ,  Yukio Okada ,  Yusuke Igarashi ,  Eiju Maehara ,  Kouji Takahashi

发明人： Noriaki Sakamoto ,  Yoshiyuki Kobayashi ,  Junji Sakamoto ,  Yukio Okada ,  Yusuke Igarashi ,  Eiju Maehara ,  Kouji Takahashi

IPC分类号： H01L2302

CPC分类号： H01L24/32 ,  G11B5/4853 ,  H01L21/4832 ,  H01L23/3128 ,  H01L23/4334 ,  H01L23/49575 ,  H01L24/48 ,  H01L24/49 ,  H01L2221/68377 ,  H01L2224/02166 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/32057 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/83385 ,  H01L2224/85424 ,  H01L2224/85447 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01059 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/351 ,  H05K1/0204 ,  H05K1/021 ,  H05K1/182 ,  H05K1/189 ,  H05K2201/10416 ,  H05K2201/10727 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2924/01026 ,  H01L2924/01046 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： A heat radiation electrode (15) is exposed from the back surface of an insulating resin (13), and a metal plate (23) is affixed to the heat radiation electrode (15). The back surface of this metal plate (23) and the back surface of a first supporting member (11) are substantially within a same plane, so that it is readily affixed to a second supporting member (24). Accordingly, the heat generated by the semiconductor chip can be efficiently dissipated via the heat radiation electrode (15), the metal plate (23) and the second supporting member (24).

摘要翻译： 散热电极（15）从绝缘树脂（13）的背面露出，金属板（23）固定在散热电极（15）上。 该金属板（23）的后表面和第一支撑构件（11）的后表面基本上位于同一平面内，从而容易地固定在第二支撑构件（24）上。 因此，可以通过散热电极（15），金属板（23）和第二支撑构件（24）有效地散发由半导体芯片产生的热量。

公开(公告)号：US5843587A

公开(公告)日：1998-12-01

申请号：US874252

申请日：1997-06-13

申请人： Masaharu Nakamori ,  Kouji Takahashi

发明人： Masaharu Nakamori ,  Kouji Takahashi

IPC分类号： C23C4/08 ,  C23C4/18 ,  C23C28/02 ,  B32B15/01 ,  C23C4/12

CPC分类号： C23C4/18 ,  Y10S428/937 ,  Y10T428/12646 ,  Y10T428/12931

摘要： A process for treating a high temperature corrosion resistant composite surface is disclosed. The process includes the steps of forming a first alloy layer by coating a metallic base material with a NiCr alloy or a MCrAlY alloy (M being made of one or more selected from the group consisting of Fe, Ni and Co) with low pressure plasma spraying, forming a second alloy layer on the first alloy layer by coating the first layer with an alloy having identical composition with atmospheric plasma spraying and then subjecting these layers to thermal diffusion treatment in a vacuum furnace or an inert gas atmosphere furnace. Thus, high temperature corrosion resistance is provided for a metallic material used at high temperatures.

摘要翻译： 公开了一种处理高温耐腐蚀复合材料表面的方法。 该方法包括通过用NiCr合金或MCrAlY合金（M由选自Fe，Ni和Co中的一种或多种制成）与金属基材进行低压等离子体喷涂而形成第一合金层的步骤 通过用具有相同组成的合金与大气等离子体喷涂一起涂覆第一层，然后在真空炉或惰性气体气氛炉中对这些层进行热扩散处理，在第一合金层上形成第二合金层。 因此，为高温下使用的金属材料提供高温耐腐蚀性。