摘要:
A semiconductor device includes a package 1, a block-module 2, and a control board 3 for controlling power semiconductor elements 11a. The block-module 2 has embedded power semiconductor elements 11a and second leads 4b and first leads 4a that are drawn from the block-module 2. The package 1 has external connection terminals 6a in contact with the first leads 4a of the block-module 2. The second leads 4b are connected to the control board 3 while the first leads 4a are joined to the external connection terminals 6a.
摘要:
An encapsulated semiconductor device includes: a first conduction path formative plate (1); a second conduction path formative plate (5) joined to the first conduction path formative plate; a power element (12) bonded to the first conduction path formative plate; a heatsink (14) held by the first conduction path formative plate with an insulation sheet (13) interposed between the heatsink and the first conduction path formative plate; and an encapsulation resin (9) configured to encapsulate the first and second conduction path formative plates. A through hole (3) or a lead gap (1b) is formed in a region of the first conduction path formative plate in contact with the insulation sheet. The insulation sheet is press-fitted into the through hole or the lead gap.
摘要:
The present invention includes a die pad; signal leads, ground connection leads connected to the die pad; a semiconductor chip including electrode pads for grounding; metal thin wires, and an encapsulating resin for encapsulating the die pad and the semiconductor chip and encapsulating the signal leads and the ground connection lead such that lower portions of the signal leads and the ground connection lead are exposed as external terminals. The ground connection lead is connected to the electrode pad for grounding, so that the resin-encapsulated semiconductor device is electrically stabilized. Furthermore, interference between high frequency signals passing through the signal leads can be suppressed by the die pad and the ground connection leads.
摘要:
A semiconductor device includes a first semiconductor chip 1, a second semiconductor chip 4, a first lead frame 3 including a first die pad 9 on which the first semiconductor chip 1 is mounted, and a second lead frame 5 including a second die pad 11 on which the second semiconductor chip 4 is mounted. A sealing structure 6 covers the first semiconductor chip 1 and the second semiconductor chip 4. A noise shield 7 is disposed between the first semiconductor chip 1 and the second semiconductor chip 4.
摘要:
An optical element mounted on a wiring board is sealed by a sealing resin except an optical function region. Wires connecting the wiring board with the optical element are also sealed by the sealing resin. The optical function region is exposed as a bottom surface of a recess whose side surface is formed by the sealing resin. A boundary portion between the side surface of the recess and a top surface portion and a boundary portion between the side surface and bottom surface of the recess have a rounded shape.
摘要:
A semiconductor image sensor includes: a semiconductor imaging element including an imaging area, a peripheral circuit area, and an electrode area; cylindrical electrodes provided on electrode terminals so as to be electrically connected with an external device; and a transparent resin layer provided on the upper surface of the semiconductor imaging element. The upper surface of each cylindrical electrode and the upper surface of the transparent resin layer are substantially of the same height.
摘要:
A solid-state imaging-device includes a base, frame-shaped ribs provided on the base and forming an internal space, a plurality of wiring members for electrically leading the internal space of a housing formed by the base and the ribs to an external portion, an imaging element fixed to the base inside the internal space, a transparent plate fixed to an upper surface of the ribs, and connecting members electrically connecting electrodes of the imaging element to the wiring members, wherein a plurality of protrusions are provided in a region of the base that faces the imaging element, and the imaging element is fixed by adhesive to the base while being supported by the protrusions. The protrusions enable the imaging element to avoid distortion caused by following the surface of the base, thereby suppressing the effect on electrical properties of the imaging element.
摘要:
A plurality of parallel rib prototypes are provided on a flat base plate. A plurality of semiconductor elements are placed in each trench between adjacent ones of the rib prototypes, and a transparent member is bonded to each of the semiconductor elements. Electrode pads of the semiconductor elements are wire bonded to connection electrodes. The trenches are then filled with an encapsulating resin. Thereafter, middle portions, in the longitudinal direction, of the rib prototypes are cut with a dicing saw, and adjacent ones of the semiconductor elements are separated from each other, thereby obtaining semiconductor devices.
摘要:
An aluminum wire is bonded to a silicon electrode by a wedge tool pressing the aluminum wire against the silicon electrode. In this way, a firmly bonded structure is obtained by sequentially stacking aluminum, aluminum oxide, silicon oxide, and silicon.
摘要:
A semiconductor device includes: a semiconductor element; a package body having the semiconductor element bonded inside thereof and electrically connected to the semiconductor element; a lid-like member covering the semiconductor element, and bonded to the package body to form a hollow structure; and a bonding member for bonding the package body and the lid-like member to each other. The bonding member is a resin adhesive containing an epoxy resin, a polymerization initiator, and a filling material, and a content of the filling material in the bonding member is 30 wt % to 60 wt %.