公开(公告)号：US20130134583A1

公开(公告)日：2013-05-30

申请号：US13477387

申请日：2012-05-22

申请人： Satoshi TSUKIYAMA ,  Masatoshi Fukuda ,  Hiroshi Watabe ,  Keita Mizoguchi ,  Naoyuki Komuta

发明人： Satoshi TSUKIYAMA ,  Masatoshi Fukuda ,  Hiroshi Watabe ,  Keita Mizoguchi ,  Naoyuki Komuta

IPC分类号： H01L23/498 ,  H01L21/50

CPC分类号： H01L24/81 ,  H01L21/50 ,  H01L23/3128 ,  H01L23/49811 ,  H01L24/13 ,  H01L24/16 ,  H01L24/73 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/10135 ,  H01L2224/10165 ,  H01L2224/13025 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/14151 ,  H01L2224/14155 ,  H01L2224/14156 ,  H01L2224/14177 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73257 ,  H01L2224/81139 ,  H01L2224/8114 ,  H01L2224/81141 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81201 ,  H01L2224/81203 ,  H01L2224/83104 ,  H01L2224/83815 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/15311 ,  H01L2924/3511 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/01083 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/00

摘要： In one embodiment, a semiconductor device includes a first semiconductor chip and a second semiconductor chip stacked on the first semiconductor chip. The first and second semiconductor chips are electrically connected via first bump connection parts. Stopper projections and bonding projections are provided at least one of the first and second semiconductor chips. The stopper projections are in contact with the other of the first and second semiconductor chips in an unbonded state. The bonding projections are bonded to the first and second semiconductor chips.

摘要翻译： 在一个实施例中，半导体器件包括堆叠在第一半导体芯片上的第一半导体芯片和第二半导体芯片。 第一和第二半导体芯片通过第一凸块连接部电连接。 止动器突起和接合突起设置在第一和第二半导体芯片中的至少一个上。 止动突起与未粘合状态的第一和第二半导体芯片中的另一个接触。 接合突起接合到第一和第二半导体芯片。

公开(公告)号：US08409271B2

公开(公告)日：2013-04-02

申请号：US12374345

申请日：2007-07-06

申请人： Yasushi Hashimoto ,  Masaaki Matsutani ,  Masatoshi Fukuda

发明人： Yasushi Hashimoto ,  Masaaki Matsutani ,  Masatoshi Fukuda

IPC分类号： A61F2/06

CPC分类号： A61F2/90 ,  A61F2/89 ,  A61F2/95 ,  A61F2002/9505

摘要： A stent has a stent main wire. The strut is disposed adjacent to the stent main wire and a junction pipe disposed around the stent main wire and strut so as to affix the stent main wire to the strut. A locking part is formed at an end of the strut to prevent the strut from sliding out of the junction pipe. The locking part comprises a folded back portion, wherein a distal most end of the folded back portion abuts with a distal most end of the junction pipe, a swelling portion, wherein a distal most end of the swelling portion is abutting a distal most end of the junction pipe, or a bent portion, wherein a distal most end of the bent portion is abutting with a distal most end of the junction pipe.

摘要翻译： 支架具有支架主线。 支柱邻近支架主线设置，并且配管设置在支架主线和支柱周围，以将支架主线固定在支柱上。 锁定部分形成在支柱的一端，以防止支柱从连接管中滑出。 锁定部分包括折回部分，其中折叠后部分的最远端与连接管的最远端邻接，肿胀部分，其中肿胀部分的最远端邻接最远端 连接管或弯曲部分，其中弯曲部分的最远端与接合管的最远端邻接。

公开(公告)号：US20120015687A1

公开(公告)日：2012-01-19

申请号：US13181737

申请日：2011-07-13

申请人： Keiju YAMADA ,  Takashi Yamazaki ,  Masatoshi Fukuda ,  Yasuhiro Koshio

发明人： Keiju YAMADA ,  Takashi Yamazaki ,  Masatoshi Fukuda ,  Yasuhiro Koshio

IPC分类号： H04W88/02 ,  H01L23/552

CPC分类号： H01L23/552 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/49805 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/544 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/97 ,  H01L2223/54433 ,  H01L2223/54486 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599

摘要： According to an embodiment, a semiconductor package includes a semiconductor chip mounted on an interposer board, a encapsulant sealing the semiconductor chip, and a conductive shielding layer covering the encapsulant and at least part of a side surface of the interposer board. The interposer board has plural vias through an insulating substrate. A part of the plural vias has a cutting plane exposing to the side surface of the interposer board and cut in a thickness direction of the interposer board. The cutting plane of the via is electrically connected to the conductive shielding layer.

摘要翻译： 根据实施例，半导体封装包括安装在插入板上的半导体芯片，密封半导体芯片的密封剂以及覆盖密封剂的导电屏蔽层和插入板的侧表面的至少一部分。 插入板具有通过绝缘基板的多个通路。 多个通孔的一部分具有暴露于插入板的侧表面并在插入板的厚度方向上切割的切割平面。 通孔的切割平面电连接到导电屏蔽层。

公开(公告)号：US20110076801A1

公开(公告)日：2011-03-31

申请号：US12882673

申请日：2010-09-15

申请人： Hideo Aoki ,  Masatoshi Fukuda ,  Kanako Sawada ,  Yasuhiro Koshio

发明人： Hideo Aoki ,  Masatoshi Fukuda ,  Kanako Sawada ,  Yasuhiro Koshio

IPC分类号： H01L21/60

CPC分类号： H01L24/81 ,  H01L24/13 ,  H01L24/16 ,  H01L24/75 ,  H01L2224/75 ,  H01L2224/75251 ,  H01L2224/75252 ,  H01L2224/7592 ,  H01L2224/81065 ,  H01L2224/81093 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/81205 ,  H01L2224/81208 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2224/81907 ,  H01L2224/81986 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/00

摘要： According to a manufacturing method of one embodiment, a first solder bump and a second solder bump are aligned and placed in contact with each other, and thereafter, the first and second solder bumps are heated to a temperature equal or higher than a melting point of the solder bumps and melted, whereby a partially connection body of the first solder bump and the second solder bump is formed. The partially connection body is cooled. The cooled partially connection body is heated to a temperature equal to or higher than the melting point of the solder bump in a reducing atmosphere, thereby to form a permanent connection body by melting the partially connection body while removing an oxide film existing on a surface of the partially connection body.

摘要翻译： 根据一个实施例的制造方法，将第一焊料凸块和第二焊料凸块对齐并且彼此接触放置，然后将第一和第二焊料凸块加热至等于或高于 焊料凸起并熔化，由此形成第一焊料凸块和第二焊料凸块的部分连接体。 部分连接体被冷却。 冷却的部分连接体在还原气氛中被加热到等于或高于焊料凸点的熔点的温度，从而通过熔化部分连接体而形成永久性连接体，同时除去存在于表面上的氧化膜 部分连接体。

公开(公告)号：US20110074018A1

公开(公告)日：2011-03-31

申请号：US12887772

申请日：2010-09-22

申请人： Masatoshi Fukuda

发明人： Masatoshi Fukuda

IPC分类号： H01L21/56 ,  H01L25/11

CPC分类号： H01L24/81 ,  H01L23/3128 ,  H01L23/3171 ,  H01L23/562 ,  H01L24/03 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/48 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/11901 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13155 ,  H01L2224/16145 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/48229 ,  H01L2224/731 ,  H01L2224/73204 ,  H01L2224/73207 ,  H01L2224/73265 ,  H01L2224/81007 ,  H01L2224/81065 ,  H01L2224/81097 ,  H01L2224/81194 ,  H01L2224/81815 ,  H01L2224/9212 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2224/81 ,  H01L2224/85 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： In one embodiment, a method of manufacturing a semiconductor device is disclosed. The method includes forming a cured film of an insulation resin on a surface of a first semiconductor chip and flip-chip bonding a second semiconductor via a bump on the first semiconductor chip on which the cured film of the insulation resin is formed. The insulation resin can be cured at temperature range from (A−50)° C. to (A+50)° C., wherein “A” is a solidification point of the bump.

摘要翻译： 在一个实施例中，公开了制造半导体器件的方法。 该方法包括在第一半导体芯片的表面上形成绝缘树脂的固化膜，并且在其上形成有绝缘树脂的固化膜的第一半导体芯片上经由凸块将第二半导体结合到第二半导体。 绝缘树脂可以在（A-50）℃至（A + 50）℃的温度范围内固化，其中“A”是凸点的凝固点。

公开(公告)号：US07458494B2

公开(公告)日：2008-12-02

申请号：US11357814

申请日：2006-02-21

申请人： Kanji Matsutani ,  Masatoshi Fukuda ,  Toshiharu Kamei ,  Takashi Ina

发明人： Kanji Matsutani ,  Masatoshi Fukuda ,  Toshiharu Kamei ,  Takashi Ina

IPC分类号： A61B17/068

CPC分类号： A61B17/0684 ,  A61B34/76 ,  A61B2090/0811

摘要： A surgical stapler has a body capable of containing a plurality of staples in an aligned state; a ram provided inside the body, having a central concave portion and pressure armatures on both sides of the concave portion; an anvil that, when the armatures of the ram contact both sides of a crown of a staple, forces the center of the crown into the concave portion of the ram; and a trigger rotatably supported on the body so as to cause relative movement between the ram and the anvil. The trigger as a moving member and the body as another member strike each other so as to produce a sound and/or a vibration indicating that a staple sandwiched between the ram and the anvil is bent by the advance of the anvil into the concave portion of the ram and bending of the staple is completed.

摘要翻译： 手术吻合器具有能够容纳处于对准状态的多个钉的主体; 设置在所述主体内的冲头，在所述凹部的两侧具有中心凹部和压力衔铁; 一个砧座，当柱塞的电枢接触订书钉的冠部的两侧时，迫使冠部的中心进入压头的凹部; 以及触发器，其被可旋转地支撑在所述主体上，以便在所述压头和所述砧座之间产生相对运动。 作为移动构件的触发器和作为另一构件的本体彼此冲击以产生声音和/或振动，其指示夹在冲头和砧座之间的钉被弯曲到砧座的凹进部分的凹部 钉子的冲头和弯曲完成。

公开(公告)号：US07148529B2

公开(公告)日：2006-12-12

申请号：US10101108

申请日：2002-03-20

申请人： Mitsuru Oida ,  Masatoshi Fukuda ,  Yasuhiro Koshio ,  Hiroshi Funakura

发明人： Mitsuru Oida ,  Masatoshi Fukuda ,  Yasuhiro Koshio ,  Hiroshi Funakura

IPC分类号： H01L31/72 ,  H01L27/15 ,  H01L29/788 ,  H01L31/232 ,  H01L29/40

CPC分类号： H01L23/552 ,  H01L21/563 ,  H01L23/295 ,  H01L23/3121 ,  H01L23/49805 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/49171 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/15173 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00015 ,  H01L2924/00012

摘要： A semiconductor package includes (a) an interposer, (b) a wiring layer containing conductors formed adjacent to each other at intervals that cause no short circuit among the conductors, the wiring layer covering a given area of the interposer, to block light from passing through the given area, (c) a light blocking layer covering a no-wiring area of the interposer not covered by the wiring layer, to block light from passing through the no-wiring area, (d) a semiconductor chip electrically connected to the wiring layer, and (e) a resin mold sealing the wiring layer, the light blocking layer, and the semiconductor chip.

摘要翻译： 半导体封装包括（a）插入件，（b）布线层，其包含彼此相邻形成的导体，间隔不导致导体之间短路，布线层覆盖中介层的给定区域，以阻挡光通过 通过给定区域，（c）覆盖未被布线层覆盖的插入件的无布线区域的遮光层，以阻挡通过无布线区域的光，（d）半导体芯片，电连接到 布线层，和（e）密封布线层，遮光层和半导体芯片的树脂模具。

公开(公告)号：US06924526B2

公开(公告)日：2005-08-02

申请号：US10020951

申请日：2001-12-19

申请人： Masatoshi Fukuda ,  Kouji Tsunoda

发明人： Masatoshi Fukuda ,  Kouji Tsunoda

IPC分类号： H01L21/8242 ,  H01L21/02 ,  H01L21/316 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/108 ,  H01L29/92

CPC分类号： H01L27/10808 ,  H01L21/31604 ,  H01L27/10814 ,  H01L27/10852 ,  H01L27/10894 ,  H01L28/55 ,  H01L28/91

摘要： The semiconductor device comprises a capacitor including a storage electrode 76, a capacitor dielectric film formed on the storage electrode 76, and a plate electrode formed on the capacitor dielectric film 78, the storage electrode 76 having an upper end rounded and having a larger thickness at the upper end than a thickness in the rest region. Whereby electric field concentration on the upper end of the storage electrode can be mitigated, and leakage current increase and dielectric breakdown of the capacitor dielectric film can be precluded.

摘要翻译： 半导体器件包括电容器，其包括存储电极76，形成在存储电极76上的电容器电介质膜和形成在电容器电介质膜78上的平板电极，存储电极76具有上端圆形并具有较大厚度 上端大于其余区域的厚度。 由此可以减轻存储电极上端的电场浓度，并且可以防止漏电流增加并且可以阻止电容器电介质膜的介电击穿。

公开(公告)号：US06462395B1

公开(公告)日：2002-10-08

申请号：US09688230

申请日：2000-10-16

申请人： Masatoshi Fukuda ,  Toshiya Suzuki ,  Tomio Katata ,  Naofumi Nakamura

发明人： Masatoshi Fukuda ,  Toshiya Suzuki ,  Tomio Katata ,  Naofumi Nakamura

IPC分类号： H01L2900

CPC分类号： H01L23/5226 ,  H01L21/76807 ,  H01L21/76816 ,  H01L21/76885 ,  H01L21/76895 ,  H01L23/485 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a semiconductor device having a multilayer interconnection structure, the contact resistance of a conductive plug that connects a wiring layer and an adjacent upper wiring layer is minimized by providing an enlarged portion at the lower end of the conductive plug.

摘要翻译： 在具有多层互连结构的半导体器件中，通过在导电插塞的下端设置放大部分来最小化连接布线层和相邻的上布线层的导电塞的接触电阻。

公开(公告)号：US6166431A

公开(公告)日：2000-12-26

申请号：US701425

申请日：1996-08-22

申请人： Jun Ohmori ,  Hiroshi Iwasaki ,  Takuya Takahashi ,  Takanori Jin ,  Masatoshi Fukuda

发明人： Jun Ohmori ,  Hiroshi Iwasaki ,  Takuya Takahashi ,  Takanori Jin ,  Masatoshi Fukuda

IPC分类号： H01L23/28 ,  H01L21/56 ,  H01L23/31 ,  H01L23/495 ,  H01L23/498 ,  H01C23/02 ,  H01C23/053

CPC分类号： H01L23/3121 ,  H01L23/49531 ,  H01L23/49838 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/45099 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01079 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/15787 ,  H01L2924/1579 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device with a thickness of 1 mm or less is disclosed, that comprises a frame plate main body with a thickness in the range from 0.1 mm to 0.25 mm, a semiconductor pellet disposed on a first surface of the frame plate main body and with a thickness in the range from 0.2 mm to 0.3 mm, an external connection lead, one end thereof being connected to a peripheral portion of the first surface of the frame plate main body, the other end thereof extending to the outside of the frame plate main body, a bonding wire for electrically connecting an electrode of the semiconductor pellet and a connection portion of the end of the external connection lead, and a sealing resin layer for covering and sealing at least a region including the semiconductor pellet, the bonding wire, and a connection portion.

摘要翻译： 公开了一种厚度为1mm以下的半导体器件，其包括厚度为0.1mm至0.25mm的框架板主体，设置在框架板主体的第一表面上并具有 厚度在0.2mm至0.3mm的范围内，外部连接引线，其一端连接到框架板主体的第一表面的周边部分，其另一端延伸到框架主体的外部 电连接半导体芯片的电极和外部连接引线的端部的连接部分的接合线，以及用于覆盖和密封至少包括半导体芯片，接合线和 连接部分。