公开(公告)号：US20100133688A1

公开(公告)日：2010-06-03

申请号：US12628869

申请日：2009-12-01

申请人： Hiromi Shigihara ,  Hiroshi Tsukamoto ,  Akira Yajima

发明人： Hiromi Shigihara ,  Hiroshi Tsukamoto ,  Akira Yajima

IPC分类号： H01L23/488

CPC分类号： H01L24/05 ,  H01L21/565 ,  H01L22/32 ,  H01L23/485 ,  H01L23/49816 ,  H01L24/06 ,  H01L24/12 ,  H01L24/16 ,  H01L24/45 ,  H01L24/46 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/78 ,  H01L24/81 ,  H01L24/85 ,  H01L25/0657 ,  H01L2224/02166 ,  H01L2224/02205 ,  H01L2224/0347 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05027 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05084 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05173 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05558 ,  H01L2224/05564 ,  H01L2224/05568 ,  H01L2224/05572 ,  H01L2224/05583 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/0568 ,  H01L2224/06183 ,  H01L2224/1134 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/2919 ,  H01L2224/29198 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/4502 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45164 ,  H01L2224/46 ,  H01L2224/4807 ,  H01L2224/48095 ,  H01L2224/48145 ,  H01L2224/48158 ,  H01L2224/48247 ,  H01L2224/48453 ,  H01L2224/48465 ,  H01L2224/48471 ,  H01L2224/48507 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/4868 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2224/48755 ,  H01L2224/48764 ,  H01L2224/4878 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/4888 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/81193 ,  H01L2224/81801 ,  H01L2224/83101 ,  H01L2224/85181 ,  H01L2224/85186 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85464 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2924/00011 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01061 ,  H01L2924/01065 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/078 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/3511 ,  H01L2924/00014 ,  H01L2924/01039 ,  H01L2924/0665 ,  H01L2224/48227 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/0002 ,  H01L2924/00015

摘要： In semiconductor integrated circuit devices for vehicle use or the like, in general, an aluminum pad on a semiconductor chip and an external device are coupled to each other by wire bonding or the like using a gold wire and the like for the convenience of mounting. Such a semiconductor integrated circuit device, however, causes a connection failure due to the interaction between aluminum and gold in use for a long time at a relatively high temperature (about 150 degrees C.). The invention of the present application provides a semiconductor integrated circuit device (semiconductor device or electron circuit device) which includes a semiconductor chip as a part of the device, an electrolytic gold plated surface film (gold-based metal plated film) provided over an aluminum-based bonding pad on a semiconductor chip via a barrier metal film, and a gold bonding wire (gold-based bonding wire) for interconnection between the plated surface film and an external lead provided over a wiring board or the like (wiring substrate).

摘要翻译： 在用于车辆用途的半导体集成电路装置等中，为了便于安装，通常使用金线等通过引线接合等将半导体芯片上的铝焊盘和外部装置彼此耦合。 然而，这样的半导体集成电路器件在相对较高的温度（约150℃）下长时间使用铝和金之间的相互作用导致连接故障。 本申请的发明提供了一种半导体集成电路器件（半导体器件或电子电路器件），其包括作为器件的一部分的半导体芯片，设置在铝上的电解镀金表面膜（金基金属镀膜） 通过阻挡金属膜在半导体芯片上的金焊接焊盘和用于在电镀表面膜和设置在布线基板等上的外部引线之间互连的金键合线（金基接合线）。

公开(公告)号：US20090315179A1

公开(公告)日：2009-12-24

申请号：US12547980

申请日：2009-08-26

申请人： Hiromi SHIGIHARA ,  Hisao Shigihara ,  Akira Yajima

发明人： Hiromi SHIGIHARA ,  Hisao Shigihara ,  Akira Yajima

IPC分类号： H01L23/498

CPC分类号： H01L24/11 ,  B23K3/0623 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/12 ,  H01L2224/0401 ,  H01L2224/05083 ,  H01L2224/05624 ,  H01L2224/1147 ,  H01L2224/11472 ,  H01L2224/1148 ,  H01L2224/13006 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/00014

摘要： A semiconductor device having projection electrodes with a narrow pad pitch, and a method of forming such semiconductor device, are provided. On a semiconductor wafer, a polyimide film, which does not cover each of a plurality of lands, is prepared between the respective lands which adjoin each other among the plurality of lands on the main surface of the semiconductor wafer. A soldering paste material is applied by a printing method, via a mask for printing, on each of a plurality of lands after polyimide film formation, and a solder bump is formed by performing heat curing of the soldering paste material after removing the mask for printing. The solder bump can be provided without generating an electric short circuit between bumps even in the case of a narrow pad pitch.

摘要翻译： 提供具有窄焊盘间距的投影电极的半导体器件和形成这种半导体器件的方法。 在半导体晶片上，在半导体晶片的主表面上的多个焊盘之间的相邻焊盘之间准备不覆盖多个焊盘中的每一个的聚酰亚胺膜。 在聚酰亚胺膜形成之后，通过印刷方法通过印刷方法在多个焊盘中的每一个上施加焊膏材料，并且在除去用于印刷的掩模之后通过进行焊膏材料的热固化来形成焊料凸块 。 可以提供焊料凸块，而不会在凸起间距窄的情况下产生凸起之间的电短路。

公开(公告)号：US20060131365A1

公开(公告)日：2006-06-22

申请号：US11300308

申请日：2005-12-15

申请人： Hiromi Shigihara ,  Hisao Shigihara ,  Akira Yajima

发明人： Hiromi Shigihara ,  Hisao Shigihara ,  Akira Yajima

IPC分类号： B23K31/02 ,  B23K31/00

CPC分类号： H01L24/11 ,  B23K3/0623 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/12 ,  H01L2224/0401 ,  H01L2224/05083 ,  H01L2224/05624 ,  H01L2224/1147 ,  H01L2224/11472 ,  H01L2224/1148 ,  H01L2224/13006 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/00014

摘要： Realization of the projection electrode formation with a narrow pad pitch is planned. In preparing a semiconductor wafer, by forming a polyimide film, which does not cover each of a plurality of lands, between the respective lands which adjoin each other among the plurality of lands on the main surface of the semiconductor wafer, applying a soldering paste material with the printing method via the mask for printing on each of a plurality of lands after polyimide film formation, and forming a solder bump by performing heat curing of the soldering paste material after removing the mask for printing, a solder bump can be formed without generating a electric short circuit between bumps even in the case of a narrow pad pitch.

摘要翻译： 计划实现具有窄垫间距的投影电极形成。 在制备半导体晶片时，通过在半导体晶片的主表面上的多个焊盘之间形成不覆盖多个焊盘中的每一个的聚酰亚胺膜之间的多个焊盘之间彼此相邻的焊盘之间， 通过印刷方法通过掩模在聚酰亚胺膜形成之后的多个区域中的每一个上进行印刷，并且通过在除去用于印刷的掩模之后进行焊膏材料的热固化来形成焊料凸块，可以形成焊料凸块而不产生 即使在窄焊盘间距的情况下，也可以在凸点之间产生电气短路。

公开(公告)号：US07057283B2

公开(公告)日：2006-06-06

申请号：US10825436

申请日：2004-04-16

申请人： Kosuke Inoue ,  Hiroyuki Tenmei ,  Yoshihide Yamaguchi ,  Noriyuki Oroku ,  Hiroshi Hozoji ,  Shigeharu Tsunoda ,  Madoka Minagawa ,  Naoya Kanda ,  Ichiro Anjo ,  Asao Nishimura ,  Akira Yajima ,  Kenji Ujiie

发明人： Kosuke Inoue ,  Hiroyuki Tenmei ,  Yoshihide Yamaguchi ,  Noriyuki Oroku ,  Hiroshi Hozoji ,  Shigeharu Tsunoda ,  Madoka Minagawa ,  Naoya Kanda ,  Ichiro Anjo ,  Asao Nishimura ,  Akira Yajima ,  Kenji Ujiie

IPC分类号： H01L23/52 ,  H01L23/48 ,  H01L29/40

CPC分类号： H01L23/3157 ,  H01L21/563 ,  H01L23/293 ,  H01L23/295 ,  H01L23/3114 ,  H01L2224/02377 ,  H01L2224/02381 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/06102 ,  H01L2224/1403 ,  H01L2224/14515 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/1703 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2924/00011 ,  H01L2924/01019 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/15311 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/01033 ,  H01L2924/01034

摘要： A semiconductor apparatus in which flip chip bonding is enabled without any underfill, and which comprises a semiconductor device, an electrically insulating layer formed on the semiconductor device by mask-printing an electrically insulating material containing particles, and an external connection terminal formed on the electrically insulating layer and electrically connected with an electrode of the semiconductor device. The electrically insulating layer is formed with a thickness so as to provide α-ray shielding of the semiconductor device.

摘要翻译： 一种半导体装置，其中可以在没有任何底部填充的情况下进行倒装芯片接合，并且其包括半导体器件，通过掩模印刷含有颗粒的电绝缘材料在半导体器件上形成的电绝缘层，以及形成在电学上的外部连接端子 绝缘层并与半导体器件的电极电连接。 电绝缘层形成为具有提供半导体器件的α射线屏蔽的厚度。

公开(公告)号：US06822317B1

公开(公告)日：2004-11-23

申请号：US09698168

申请日：2000-10-30

申请人： Kosuke Inoue ,  Hiroyuki Tenmei ,  Yoshihide Yamaguchi ,  Noriyuki Oroku ,  Hiroshi Hozoji ,  Shigeharu Tsunoda ,  Madoka Minagawa ,  Naoya Kanda ,  Ichiro Anjo ,  Asao Nishimura ,  Akira Yajima ,  Kenji Ujiie

发明人： Kosuke Inoue ,  Hiroyuki Tenmei ,  Yoshihide Yamaguchi ,  Noriyuki Oroku ,  Hiroshi Hozoji ,  Shigeharu Tsunoda ,  Madoka Minagawa ,  Naoya Kanda ,  Ichiro Anjo ,  Asao Nishimura ,  Akira Yajima ,  Kenji Ujiie

IPC分类号： H01L23495

CPC分类号： H01L23/3114 ,  H01L21/563 ,  H01L23/293 ,  H01L23/295 ,  H01L23/3157 ,  H01L2224/05001 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05569 ,  H01L2224/05573 ,  H01L2224/05644 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2924/00011 ,  H01L2924/01019 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/01033 ,  H01L2924/01034

摘要： A semiconductor apparatus comprising a semiconductor device, an electrically insulating layer formed on the semiconductor device, and an external connection terminal formed on the electrically insulating layer and electrically connected to an electrode of the semiconductor device, wherein a power/ground line and a signal line in a region of from an edge of the electrically insulating layer to a uniform-thickness flat portion of the electrically insulating layer are different in kind of wiring pattern from each other.

摘要翻译： 一种半导体器件，包括半导体器件，形成在半导体器件上的电绝缘层和形成在电绝缘层上并与半导体器件的电极电连接的外部连接端子，其中电源/接地线和信号线 在从电绝缘层的边缘到电绝缘层的均匀厚度平坦部分的区域中，布线图案的种类不同。