公开(公告)号：US20160230312A1

公开(公告)日：2016-08-11

申请号：US15134081

申请日：2016-04-20

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Asako Hirai ,  Zhongyuan Jia ,  Makoto Saito ,  Hisashi Yamada ,  Kenji Iso ,  Steven P. DenBaars ,  Shuji Nakamura ,  James S. Speck

IPC: C30B29/40 ,  C30B29/60 ,  H01L21/02 ,  H01L29/04 ,  H01S5/343 ,  H01L31/0304 ,  H01L31/18 ,  H01L33/00 ,  H01L33/16 ,  H01L33/32 ,  C30B25/20 ,  H01L29/20

CPC classification number: C30B29/406 ,  C30B23/025 ,  C30B23/066 ,  C30B25/18 ,  C30B25/186 ,  C30B25/20 ,  C30B29/403 ,  C30B29/60 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/02565 ,  H01L21/02609 ,  H01L21/02617 ,  H01L21/02636 ,  H01L29/04 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/26 ,  H01L31/03044 ,  H01L31/036 ,  H01L31/1856 ,  H01L33/0075 ,  H01L33/16 ,  H01L33/32 ,  H01S5/34333 ,  Y10T428/24612

Abstract: A nonpolar III-nitride film grown on a miscut angle of a substrate, in order to suppress the surface undulations, is provided. The surface morphology of the film is improved with a miscut angle towards an α-axis direction comprising a 0.15° or greater miscut angle towards the α-axis direction and a less than 30° miscut angle towards the α-axis direction.

Abstract translation: 提供了为了抑制表面波动而在衬底的错误角度上生长的非极性III族氮化物膜。 膜的表面形态通过朝向朝向α轴方向具有0.15°以上的误差角和朝向α轴方向的小于30°的倾斜角度的朝向α轴方向的误差角度而改善。

公开(公告)号：US09231376B2

公开(公告)日：2016-01-05

申请号：US14229674

申请日：2014-03-28

Applicant: The Regents of the University of California

Inventor： Robert M. Farrell, Jr. ,  Troy J. Baker ,  Arpan Chakraborty ,  Benjamin A. Haskell ,  P. Morgan Pattison ,  Rajat Sharma ,  Umesh K. Mishra ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

IPC: H01L33/30 ,  H01S5/343 ,  B82Y20/00 ,  C30B23/02 ,  C30B25/18 ,  C30B29/40 ,  H01L21/02 ,  H01L33/00 ,  H01S5/042 ,  H01S5/22 ,  H01S5/32

CPC classification number: H01L33/16 ,  B82Y20/00 ,  C30B23/025 ,  C30B25/18 ,  C30B29/403 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L33/0004 ,  H01L33/0062 ,  H01L33/007 ,  H01L33/02 ,  H01S5/0422 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2304/04

Abstract: A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga,Al,In,B)N template or nucleation layer on the substrate, and growing the semipolar (Ga,Al,In,B)N thin films, heterostructures or devices on the planar semipolar (Ga,Al,In,B)N template or nucleation layer. The method results in a large area of the semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices being parallel to the substrate surface.

Abstract translation: 一种用于生长和制造半极性（Ga，Al，In，B）N薄膜，异质结构和器件的方法，包括鉴定特定器件应用的所需材料性质，基于所需材料性质选择半极性生长取向，选择 用于生长选择的半极性生长取向的合适底物，在衬底上生长平面半极性（Ga，Al，In，B）N模板或成核层，以及生长半极（Ga，Al，In，B）N薄膜 ，平面半极性（Ga，Al，In，B）N模板或成核层上的异质结构或器件。 该方法导致大面积的半极性（Ga，Al，In，B）N薄膜，异质结构和器件平行于衬底表面。

公开(公告)号：US09136673B2

公开(公告)日：2015-09-15

申请号：US13947755

申请日：2013-07-22

Applicant: The Regents of the University of California

Inventor： Casey O. Holder ,  Daniel F. Feezell ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

IPC: H01S5/00 ,  H01S5/10 ,  H01S5/183 ,  H01S5/343 ,  B82Y20/00 ,  H01S5/02 ,  H01S5/042 ,  H01S5/20 ,  H01S5/32 ,  H01S5/42

CPC classification number: H01S5/18355 ,  B82Y20/00 ,  H01S5/005 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/0425 ,  H01S5/0654 ,  H01S5/1039 ,  H01S5/183 ,  H01S5/18341 ,  H01S5/18358 ,  H01S5/18369 ,  H01S5/2009 ,  H01S5/209 ,  H01S5/3202 ,  H01S5/34333 ,  H01S5/423 ,  H01S2301/176

Abstract: A III-Nitride based Vertical Cavity Surface Emitting Laser (VCSEL), wherein a cavity length of the VCSEL is controlled by etching.

Abstract translation: 基于III-Nitride的垂直腔表面发射激光器（VCSEL），其中通过蚀刻来控制VCSEL的腔长度。

公开(公告)号：US20140367698A1

公开(公告)日：2014-12-18

申请号：US14466420

申请日：2014-08-22

Applicant: The Regents of the University of California

Inventor： Hugues Marchand ,  Brendan J. Moran ,  Umesh K. Mishra ,  James S. Speck

IPC: H01L23/00 ,  H01L29/205 ,  H01L33/00 ,  H01L33/12 ,  H01L33/32 ,  H01L29/20 ,  H01L21/02

CPC classification number: H01L23/562 ,  C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/205 ,  H01L33/0025 ,  H01L33/0066 ,  H01L33/0075 ,  H01L33/12 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods of controlling stress in GaN films deposited on silicon and silicon carbide substrates and the films produced therefrom are disclosed. A typical method comprises providing a substrate and depositing a graded gallium nitride layer on the substrate having a varying composition of a substantially continuous grade from an initial composition to a final composition formed from a supply of at least one precursor in a growth chamber without any interruption in the supply. A typical semiconductor film comprises a substrate and a graded gallium nitride layer deposited on the substrate having a varying composition of a substantially continuous grade from an initial composition to a final composition formed from a supply of at least one precursor in a growth chamber without any interruption in the supply.

Abstract translation: 公开了控制沉积在硅和碳化硅衬底上的GaN膜中的应力控制方法和由其制备的膜。 典型的方法包括提供衬底并在衬底上沉积梯度的氮化镓层，其具有基本上连续等级的从初始组成到由生长室中的至少一种前体的供应形成的最终组成的变化的组成，而不会中断 在供应。 典型的半导体膜包括沉积在衬底上的衬底和梯度的氮化镓层，其具有从初始组成到最终组成的基本连续等级的变化的组成，其由在生长室中供应至少一种前体而形成，而不会中断 在供应。

公开(公告)号：US20140346542A1

公开(公告)日：2014-11-27

申请号：US14456768

申请日：2014-08-11

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Hong Zhong ,  Anurag Tyagi ,  Kenneth J. Vampola ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L33/22 ,  H01L33/32 ,  H01L33/00 ,  H01L33/10

CPC classification number: H01L33/22 ,  H01L21/02433 ,  H01L21/02458 ,  H01L33/0075 ,  H01L33/10 ,  H01L33/18 ,  H01L33/20 ,  H01L33/32 ,  H01L2933/0083

Abstract: A III-nitride light emitting diode (LED) and method of fabricating the same, wherein at least one surface of a semipolar or nonpolar plane of a III-nitride layer of the LED is textured, thereby forming a textured surface in order to increase light extraction. The texturing may be performed by plasma assisted chemical etching, photolithography followed by etching, or nano-imprinting followed by etching.

Abstract translation: III族氮化物发光二极管（LED）及其制造方法，其中LED的III族氮化物层的半极性或非极性面的至少一个表面被纹理化，从而形成纹理表面以增加光 萃取。 纹理可以通过等离子体辅助化学蚀刻，光刻，然后进行蚀刻或纳米压印，然后蚀刻来进行。

公开(公告)号：US20140167059A1

公开(公告)日：2014-06-19

申请号：US14014904

申请日：2013-08-30

Applicant: The Regents of the University of California

Inventor： Chung-Ta Hsu ,  Chia-Yen Huang ,  Yuji Zhao ,  Shih-Chieh Haung ,  Daniel F. Feezell ,  Steven P. DenBaars ,  Shuji Nakamura ,  James S. Speck

IPC: H01L33/00 ,  H01L33/32

CPC classification number: H01L33/0075 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02658 ,  H01L33/007 ,  H01L33/16 ,  H01L33/32

Abstract: A method of performing a photoelectrochemical (PEC) etch on an exposed surface of a semipolar {20-2-1} III-nitride semiconductor, for improving light extraction from and for enhancing external efficiency of one or more active layers formed on or above the semipolar {20-2-1} III-nitride semiconductor.

Abstract translation: 在半极{20-2-1} III-氮化物半导体的暴露表面上执行光电化学（PEC）蚀刻的方法，用于改善从或在其上形成的一个或多个活性层的光提取和增强外部效率 半极性{20-2-1} III族氮化物半导体。

公开(公告)号：US20140138679A1

公开(公告)日：2014-05-22

申请号：US14164434

申请日：2014-01-27

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Asako Hirai ,  Zhongyuan Jia ,  Makoto Saito ,  Hisashi Yamada ,  Kenji Iso ,  Steven P. DenBaars ,  Shuji Nakamura ,  James S. Speck

IPC: H01L21/02 ,  H01L29/26 ,  H01L29/16 ,  H01L29/04 ,  H01L29/20

CPC classification number: C30B29/406 ,  C30B23/025 ,  C30B23/066 ,  C30B25/18 ,  C30B25/186 ,  C30B25/20 ,  C30B29/403 ,  C30B29/60 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/02565 ,  H01L21/02609 ,  H01L21/02617 ,  H01L21/02636 ,  H01L29/04 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/26 ,  H01L31/03044 ,  H01L31/036 ,  H01L31/1856 ,  H01L33/0075 ,  H01L33/16 ,  H01L33/32 ,  H01S5/34333 ,  Y10T428/24612

Abstract: A nonpolar III-nitride film grown on a miscut angle of a substrate, in order to suppress the surface undulations, is provided. The surface morphology of the film is improved with a miscut angle towards an a-axis direction comprising a 0.15° or greater miscut angle towards the a-axis direction and a less than 30° miscut angle towards the a-axis direction.

公开(公告)号：US20140116326A1

公开(公告)日：2014-05-01

申请号：US14149121

申请日：2014-01-07

Applicant: The Regents of the University of California

Inventor： Siddha Pimputkar ,  Derrick Shane Kamber ,  James S. Speck ,  Shuji Nakamura

IPC: C30B7/10

CPC classification number: C30B7/105 ,  B01D9/0013 ,  B01D9/0031 ,  C30B7/10 ,  C30B29/40 ,  C30B29/403 ,  H01L21/67109 ,  Y10T117/1096 ,  Y10T428/24355

Abstract: Reactor designs for use in ammonothermal growth of group-III nitride crystals. Internal heating is used to enhance and/or engineer fluid motion, gas mixing, and the ability to create solubility gradients within a vessel used for the ammonothermal growth of group-III nitride crystals. Novel baffle designs are used for control and improvement of continuous fluid motion within a vessel used for the ammonothermal growth of group-III nitride crystals.

Abstract translation: 用于III族氮化物晶体的氨热生长的反应器设计。 内部加热用于增强和/或设计流体运动，气体混合以及在用于III族氮化物晶体的氨热生长的容器内产生溶解度梯度的能力。 新型挡板设计用于控制和改进用于III族氮化物晶体的氨热生长的容器内的连续流体运动。

公开(公告)号：US20130340672A1

公开(公告)日：2013-12-26

申请号：US13971355

申请日：2013-08-20

Applicant: The Regents of the University of California

Inventor： Siddha Pimputkar ,  Derrick S. Kamber ,  James S. Speck ,  Shuji Nakamura

IPC: C30B7/10

CPC classification number: C30B7/105 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0254 ,  H01L29/045 ,  H01L29/2003

Abstract: Boron-containing compounds, gasses and fluids are used during ammonothermal growth of group-III nitride crystals. Boron-containing compounds are used as impurity getters during the ammonothermal growth of group-III nitride crystals. In addition, a boron-containing gas and/or supercritical fluid is used for enhanced solubility of group-III nitride into said fluid.

Abstract translation: 在III族氮化物晶体的氨热生长过程中使用含硼化合物，气体和流体。 在III族氮化物晶体的氨热生长过程中，含硼化合物用作杂质吸附剂。 此外，含硼气体和/或超临界流体用于提高III族氮化物在所述流体中的溶解度。

公开(公告)号：US20130299777A1

公开(公告)日：2013-11-14

申请号：US13890664

申请日：2013-05-09

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Shuji Nakamura ,  Steven P. DenBaars ,  Daniel F. Feezell ,  James S. Speck ,  Chih-Chien Pan

IPC: H01L33/16 ,  H01L33/00

CPC classification number: H01L33/16 ,  H01L33/0075 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A III-nitride based LED with an External Quantum Efficiency (EQE) droop of less than 10% when a junction temperature of the LED is increased from 20 ° C. to at least 100 ° C. at a current density of the LED of at least 20 Amps per centimeter square.

Abstract translation: 当LED的结温从20℃增加到至少100℃时，具有小于10％的具有外部量子效率（EQE）的III族氮化物基LED，其LED的电流密度在 每平方厘米最少20安培